Z ibo Seno Electronic Engineering Co., Ltd. MUR405 –MUR4100 4.0A ULTRAFAST DIODE Features ! ! ! ! ! Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: DO-201AD, Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 1.2 grams (approx.) Mounting Position: Any Marking: Type Number Lead Free: For RoHS / Lead Free Version D DO-201AD Max Dim Min 25.4 24.5 — A 8.50 7.20 9.50 B 1.20 1.10 1.30 C 5.00 5.0 5.60 D All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) @TA = 55°C Symbol MUR 405 MUR 410 MUR 415 MUR 420 MUR 440 MUR 460 MUR 480 MUR 4100 Unit VRRM VRWM VR 50 100 150 200 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IO 4.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 150 A Forward Voltage @IF = 4.0A VFM @TA = 25°C @TA = 100°C IRM Peak Reverse Current At Rated DC Blocking Voltage 1.0 1.3 1.7 10 100 V µA Reverse Recovery Time (Note 2) trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 80 50 pF Operating Temperature Range Tj -65 to +150 °C TSTG -65 to +150 °C Storage Temperature Range Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case 2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5. 3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. MUR405 – MUR4100 1 of 2 www.senocn.com Alldatasheet Z ibo Seno Electronic Engineering Co., Ltd. MUR405 –MUR4100 4 IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FWD RECTIFIED CURRENT (A) Single phase half wave Resistive or Inductive load 3 2 1 0 0 25 50 75 100 125 150 175 100 MUR405 –MUR420 10 MUR440 MUR460 –MUR4100 1.0 0.1 0.01 0.6 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 1.0 1.4 1.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 200 100 8.3ms single half sine-wave 100 Cj, CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Tj = 25°C Pulse width = 300µs 2% duty cycle 10 MUR405 –MUR440 MUR460 –MUR4100 10 1 1 10 NUMBER OF CYCLES AT 60Hz Fig. 3 Peak Forward Surge Current 1 100 10 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance 100 trr +0.5A 50Ω NI (Non-inductive) 10Ω NI Device Under Test (-) 0A (+) Pulse Generator (Note 2) 50V DC Approx (-) 1.0Ω NI Oscilloscope (Note 1) -0.25A (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 5/10ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit MUR405 – MUR4100 2 of 2 www.senocn.com Alldatasheet