ON BC337RL1G Amplifier transistors npn silicon Datasheet

BC337, BC337−16,
BC337−25, BC337−40,
BC338−25
Amplifier Transistors
NPN Silicon
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Features
COLLECTOR
1
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
BC337 BC338
Unit
Collector − Emitter Voltage
VCEO
45
25
Vdc
Collector − Base Voltage
VCBO
50
30
Vdc
Emitter − Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
800
mAdc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
625
5.0
1.5
12
TJ, Tstg
3
EMITTER
mW
mW/°C
W
mW/°C
°C
−55 to +150
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
2
BASE
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
1
2
3
TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
BC33
x−xx
AYWW G
G
BC33x−xx = Device Code
(Refer to page 4)
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 5
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Publication Order Number:
BC337/D
BC337, BC337−16, BC337−25, BC337−40, BC338−25
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
45
25
−
−
−
−
50
30
−
−
−
−
5.0
−
−
−
−
−
−
100
100
−
−
−
−
100
100
−
−
100
100
100
160
250
60
−
−
−
−
−
630
250
400
630
−
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC338
V(BR)CEO
BC337
Collector −Emitter Breakdown Voltage
(IC = 100 mA, IE = 0)
Vdc
V(BR)CES
BC337
BC338
Emitter −Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 20 V, IE = 0)
BC337
BC338
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
(VCE = 25 V, VBE = 0)
BC337
BC338
Vdc
Vdc
ICBO
nAdc
ICES
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
nAdc
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mA, VCE = 1.0 V)
hFE
−
BC337
BC337−16
BC337−25/BC338−25
BC337−40
(IC = 300 mA, VCE = 1.0 V)
Base−Emitter On Voltage
(IC = 300 mA, VCE = 1.0 V)
VBE(on)
−
−
1.2
Vdc
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA)
VCE(sat)
−
−
0.7
Vdc
Cob
−
15
−
pF
fT
−
210
−
MHz
SMALL−SIGNAL CHARACTERISTICS
Output Capacitance
(VCB = 10 V, IE = 0, f = 1.0 MHz)
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Current −Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1 0.05
0.07 0.02
0.05
0.03
P(pk)
SINGLE PULSE
0.01
t1
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.02
0.01
0.001
qJC(t) = (t) qJC
qJC = 100°C/W MAX
qJA(t) = r(t) qJA
qJA = 375°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) qJC(t)
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
t, TIME (SECONDS)
1.0
Figure 1. Thermal Response
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2
2.0
5.0
10
20
50
100
BC337, BC337−16, BC337−25, BC337−40, BC338−25
1.0 s
1.0 ms
1000
TJ = 135°C
100 ms
hFE , DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
1000
dc
TC = 25°C
dc
TA = 25°C
100
10
1.0
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
(APPLIES BELOW RATED VCEO)
3.0
10
30
VCE, COLLECTOR−EMITTER VOLTAGE
VCE = 1 V
TJ = 25°C
100
10
0.1
100
1.0
10
100
IC, COLLECTOR CURRENT (MA)
Figure 3. DC Current Gain
1.0
1.0
TJ = 25°C
TA = 25°C
0.8
0.8
V, VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS
Figure 2. Active Region − Safe Operating Area
0.6
IC = 10 mA
0.4
100 mA
300 mA
500 mA
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.6
0.4
0.2
0.2
VCE(sat) @ IC/IB = 10
0
0.01
0.1
1
IB, BASE CURRENT (mA)
10
0
100
1
Figure 4. Saturation Region
10
100
IC, COLLECTOR CURRENT (mA)
1000
Figure 5. “On” Voltages
100
+1
qVC for VCE(sat)
C, CAPACITANCE (pF)
θV, TEMPERATURE COEFFICIENTS (mV/°C)
1000
0
−1
qVB for VBE
−2
1
10
100
IC, COLLECTOR CURRENT (mA)
Cib
10
Cob
1
0.1
1000
Figure 6. Temperature Coefficients
1
10
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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3
100
BC337, BC337−16, BC337−25, BC337−40, BC338−25
ORDERING INFORMATION
Device
BC337
BC337G
BC337RL1
BC337RL1G
BC337ZL1
BC337ZL1G
BC337−16
BC337−16G
BC337−16RL1
BC337−16RL1G
BC337−16ZL1
BC337−16ZL1G
BC337−25
BC337−25G
BC337−25RL1
BC337−25RL1G
BC337−25ZL1
BC337−25ZL1G
BC337−40
BC337−40G
BC337−40RL1
BC337−40RL1G
BC337−40ZL1
BC337−40ZL1G
BC338−25ZL1
BC338−25ZL1G
Package
Marking
Shipping †
TO−92
7
5000 Units / Box
TO−92
(Pb−Free)
7
5000 Units / Box
TO−92
7
2000 / Tape & Reel
TO−92
(Pb−Free)
7
2000 / Tape & Reel
TO−92
7
2000 / Ammo Box
TO−92
(Pb−Free)
7
2000 / Ammo Box
TO−92
7−16
5000 Units / Box
TO−92
(Pb−Free)
7−16
5000 Units / Box
TO−92
7−16
2000 / Tape & Reel
TO−92
(Pb−Free)
7−16
2000 / Tape & Reel
TO−92
7−16
2000 / Ammo Box
TO−92
(Pb−Free)
7−16
2000 / Ammo Box
TO−92
7−25
5000 Units / Box
TO−92
(Pb−Free)
7−25
5000 Units / Box
TO−92
7−25
2000 / Tape & Reel
TO−92
(Pb−Free)
7−25
2000 / Tape & Reel
TO−92
7−25
2000 / Ammo Box
TO−92
(Pb−Free)
7−25
2000 / Ammo Box
TO−92
7−40
5000 Units / Box
TO−92
(Pb−Free)
7−40
5000 Units / Box
TO−92
7−40
2000 / Tape & Reel
TO−92
(Pb−Free)
7−40
2000 / Tape & Reel
TO−92
7−40
2000 / Ammo Box
TO−92
(Pb−Free)
7−40
2000 / Ammo Box
TO−92
8−25
2000 / Ammo Box
TO−92
(Pb−Free)
8−25
2000 / Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
BC337, BC337−16, BC337−25, BC337−40, BC338−25
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
N
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC337/D
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