BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc Collector − Base Voltage VCBO 50 30 Vdc Emitter − Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 800 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range 625 5.0 1.5 12 TJ, Tstg 3 EMITTER mW mW/°C W mW/°C °C −55 to +150 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic 2 BASE Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 1 2 3 TO−92 CASE 29 STYLE 17 MARKING DIAGRAM BC33 x−xx AYWW G G BC33x−xx = Device Code (Refer to page 4) A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 September, 2005 − Rev. 5 1 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. Publication Order Number: BC337/D BC337, BC337−16, BC337−25, BC337−40, BC338−25 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 45 25 − − − − 50 30 − − − − 5.0 − − − − − − 100 100 − − − − 100 100 − − 100 100 100 160 250 60 − − − − − 630 250 400 630 − Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA, IB = 0) BC338 V(BR)CEO BC337 Collector −Emitter Breakdown Voltage (IC = 100 mA, IE = 0) Vdc V(BR)CES BC337 BC338 Emitter −Base Breakdown Voltage (IE = 10 mA, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 V, IE = 0) (VCB = 20 V, IE = 0) BC337 BC338 Collector Cutoff Current (VCE = 45 V, VBE = 0) (VCE = 25 V, VBE = 0) BC337 BC338 Vdc Vdc ICBO nAdc ICES Emitter Cutoff Current (VEB = 4.0 V, IC = 0) IEBO nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE − BC337 BC337−16 BC337−25/BC338−25 BC337−40 (IC = 300 mA, VCE = 1.0 V) Base−Emitter On Voltage (IC = 300 mA, VCE = 1.0 V) VBE(on) − − 1.2 Vdc Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 Vdc Cob − 15 − pF fT − 210 − MHz SMALL−SIGNAL CHARACTERISTICS Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 100 MHz) 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.03 P(pk) SINGLE PULSE 0.01 t1 t2 SINGLE PULSE DUTY CYCLE, D = t1/t2 0.02 0.01 0.001 qJC(t) = (t) qJC qJC = 100°C/W MAX qJA(t) = r(t) qJA qJA = 375°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) qJC(t) 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t, TIME (SECONDS) 1.0 Figure 1. Thermal Response http://onsemi.com 2 2.0 5.0 10 20 50 100 BC337, BC337−16, BC337−25, BC337−40, BC338−25 1.0 s 1.0 ms 1000 TJ = 135°C 100 ms hFE , DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 1000 dc TC = 25°C dc TA = 25°C 100 10 1.0 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT (APPLIES BELOW RATED VCEO) 3.0 10 30 VCE, COLLECTOR−EMITTER VOLTAGE VCE = 1 V TJ = 25°C 100 10 0.1 100 1.0 10 100 IC, COLLECTOR CURRENT (MA) Figure 3. DC Current Gain 1.0 1.0 TJ = 25°C TA = 25°C 0.8 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS Figure 2. Active Region − Safe Operating Area 0.6 IC = 10 mA 0.4 100 mA 300 mA 500 mA VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1 V 0.6 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 0 100 1 Figure 4. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) 1000 Figure 5. “On” Voltages 100 +1 qVC for VCE(sat) C, CAPACITANCE (pF) θV, TEMPERATURE COEFFICIENTS (mV/°C) 1000 0 −1 qVB for VBE −2 1 10 100 IC, COLLECTOR CURRENT (mA) Cib 10 Cob 1 0.1 1000 Figure 6. Temperature Coefficients 1 10 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 3 100 BC337, BC337−16, BC337−25, BC337−40, BC338−25 ORDERING INFORMATION Device BC337 BC337G BC337RL1 BC337RL1G BC337ZL1 BC337ZL1G BC337−16 BC337−16G BC337−16RL1 BC337−16RL1G BC337−16ZL1 BC337−16ZL1G BC337−25 BC337−25G BC337−25RL1 BC337−25RL1G BC337−25ZL1 BC337−25ZL1G BC337−40 BC337−40G BC337−40RL1 BC337−40RL1G BC337−40ZL1 BC337−40ZL1G BC338−25ZL1 BC338−25ZL1G Package Marking Shipping † TO−92 7 5000 Units / Box TO−92 (Pb−Free) 7 5000 Units / Box TO−92 7 2000 / Tape & Reel TO−92 (Pb−Free) 7 2000 / Tape & Reel TO−92 7 2000 / Ammo Box TO−92 (Pb−Free) 7 2000 / Ammo Box TO−92 7−16 5000 Units / Box TO−92 (Pb−Free) 7−16 5000 Units / Box TO−92 7−16 2000 / Tape & Reel TO−92 (Pb−Free) 7−16 2000 / Tape & Reel TO−92 7−16 2000 / Ammo Box TO−92 (Pb−Free) 7−16 2000 / Ammo Box TO−92 7−25 5000 Units / Box TO−92 (Pb−Free) 7−25 5000 Units / Box TO−92 7−25 2000 / Tape & Reel TO−92 (Pb−Free) 7−25 2000 / Tape & Reel TO−92 7−25 2000 / Ammo Box TO−92 (Pb−Free) 7−25 2000 / Ammo Box TO−92 7−40 5000 Units / Box TO−92 (Pb−Free) 7−40 5000 Units / Box TO−92 7−40 2000 / Tape & Reel TO−92 (Pb−Free) 7−40 2000 / Tape & Reel TO−92 7−40 2000 / Ammo Box TO−92 (Pb−Free) 7−40 2000 / Ammo Box TO−92 8−25 2000 / Ammo Box TO−92 (Pb−Free) 8−25 2000 / Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 BC337, BC337−16, BC337−25, BC337−40, BC338−25 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE DIM A B C D G H J K L N P R V K D X X G J H V C SECTION X−X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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