ICE35N60W Product Summary N-Channel Enhancement Mode MOSFET ID TA = 25°C 35A Max V(BR)DSS rDS(ON) ID = 250uA 600V Min VGS = 10V 0.075Ω Typ Qg VDS = 480V 187nC Typ Pin Description: Features: Low rDS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance D G TO-247 Optimized Design For High Performance Power Systems S Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol ID ID, pulse Parameter Continous Drain Current Value Unit Conditions 35 A TC = 25°C Pulsed Drain Current 103 A TC = 25°C EAS Avalanche Energy, Single Pulse 1100 mJ ID = 18A IAR Avalanche Current, Repetitive 18 A Limited by Tjmax MOSFET dv/dt Ruggedness 50 V/ns dv/dt VGS Gate Source Voltage Ptot Power Dissipation Tj, Tstg ±20 ±30 Operating and Storage Temperature Parameter Static AC (f>Hz) 313 W -55 to +150 °C 60 Ncm M 2.5 screws Unit Conditions Mounting Torque Symbol V VDS = 480V, ID = 35A, Tj = 125°C Values Min Typ Max TC = 25°C Thermal Characteristics RthJC Thermal Resistance, Junction to Case - - 0.3 RthJA Thermal Resistance, Junction to Ambient - - 50 Tsold Soldering Temperature, Wave Soldering Only Allowed At Leads - - 260 °C/W °C Leaded 1.6mm (0.063in.) from Case for 10s Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified Static Characteristics V(BR)DSS Drain to Source Breakdown Voltage 600 640 - VGS(th) Gate Threshold Voltage 2.1 3 3.9 - 0.5 10 - - 250 - - 200 - 0.075 0.09 - 0.2 - - 6 - IDSS IGSS RDS(on) RGS Zero Gate Voltage Drain Current Gate Source Leakage Current Drain to Source On-State Resistance Gate Resistance V µA nA Ω Ω VGS = 0V, ID = 1mA VDS = VGS, ID = 250µA VDS = 600V, VGS = 0V, Tj = 25°C VDS = 600V, VGS = 0V, Tj = 150°C VGS = ±20v, VDS = 0V VGS = 10V, ID = 18A, Tj = 25°C VGS = 10V, ID = 18A, Tj = 150°C f = 1 MHz, open drain Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 1 ICE35N60W Symbol Parameter Values Min Typ Max Unit Conditions Dynamic Characteristics Ciss Input Capacitance - 5970 - Coss Output Capacitance - 677 - Crss Reverse Transfer Capacitance - 35 - gfs Transconductance - 30 - td(on) Turn-on Delay Time - 160 - Tr Rise Time - 25 - td(off ) Turn-off Delay Time - 20 - tf Fall Time - 25 - 36 - pF VGS = 0V, VDS = 25V, f = 1 MHz S VDS = >2*ID* RDS, ID = 15A nS VDS = 380V, VGS = 10V, ID = 35A, RG = 4Ω (External) Gate Charge Characteristics Qgs Gate to Source Charge - Qgd Gate to Drain Charge - 62 - Qg Gate Charge Total - 187 - Vplateau Gate Plateau Voltage - 5.3 - nC VDS = 480V, ID = 35A, VGS = 0 to 10V V Reverse Diode VSD Diode Forward Voltage - 0.95 1.2 V trr Reverse Recovery Time - 547 - ns Qrr Reverse Recovery Charge - 12 - µC Irm Peak Reverse Recovery Current - 43 - A VGS = 0V, IS = IF VRR = 480V, IS = IF, diF/dt = 100 A/µS Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 2 ICE35N60W Transfer Characterstics Output Characteristics 100 100 VGS = 10V to 7V 90 80 80 70 ID - Drain Current (A) ID - Drain Current (A) 90 6V 60 50 40 5V 30 70 60 50 40 30 20 20 10 10 0 0 5 10 VDS - Drain to Source Voltage (V) TJ = 150°C 25°C 0 0 15 2 On State Resistance vs Drain Current 8 10 4.0 3.5 160 120 RDS(on) - On State Resistance (Normalized) RDS(on) - On State Resistance (mΩ) 6 On Resistance vs Junction Temperature 200 VGS = 10V 80 40 0 4 VGS - Gate to Source Voltage (V) VGS = 10V ID = 18A 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 0.0 100 ID - Drain Current (A) -50 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 150 Gate Charge 10 VGS - Gate to Source Voltage (V) 9 8 VDS = 480V ID = 35A 7 6 5 4 3 2 1 0 0 50 100 Qg - Total Gate Charge (nC) 150 200 Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 3 ICE35N60W Gate Threshold Voltage vs. Junction Temperature Capacitance 100000 1.3 Ciss 10000 1.2 1.1 ID = 250µA 1.0 C - Capacitance (pF) VGS(th) - Gate Threshold Voltage (Normalized) 1.4 0.9 0.8 0.7 0.6 1000 Coss 100 10 Crss 0.5 0 0.4 -50 -25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0 100 100 1.0 0.9 0.8 -25 0 25 50 75 100 TJ - Junction Temperature (°C) 125 400 500 600 Single Pulse Tc = 25°C T = 150°C VGS = 10V 10 ID = 1mA ID - Drain Current (A) V(BR)DSS - Drain to Source Breakdown Voltage (Normalized) 1.2 -50 300 Maximum Rate Forward Biased Safe Operating Area Drain to Source Breakdown Voltage vs. Junction Temperature 1.1 200 VDS- Drain to Source Voltage (V) 10us 100us 1 1ms 10ms DC 0.1 RDS (ON) Limit Package Limit Thermal Limit 0.01 150 1 10 100 1000 VDS- Drain to Source Voltage (V) Transient Thermal Response - Junction to Case r(t) - Transit Thermal Resistance (Normalized) 1.00 0.5 0.2 0.1 0.10 0.05 0.02 Notes: 0.01 PDM Single Pulse t1 t2 Duty Cycle, D = 0.00 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t1 t2 1.0E-01 1.0E-00 t - Time (seconds) Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected] 4