IRF IRHG8214 Radiation hardened power mosfet thru-hole Datasheet

PD - 91711B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (MO-036AB)
IRHG7214
250V,QUAD N-CHANNEL
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHG7214
100K Rads (Si)
IRHG3214
300K Rads (Si)
IRHG4214
600K Rads (Si)
IRHG8214
1000K Rads (Si)
R DS(on)
2.25Ω
2.25Ω
2.25Ω
2.25Ω
ID
0.5A
0.5A
0.5A
0.5A
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
MO-036AB
Features:
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Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
0.5
0.3
2.0
1.4
0.011
±20
75
—
—
5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (1.6mm from case for 10s)
1.5 (Typical )
C
g
For footnotes refer to the last page
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1
8/14/01
IRHG7214
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
BVDSS
Drain-to-Source Breakdown Voltage
250
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
—
VGS(th)
Gate Threshold Voltage
2.0
g fs
Forward Transconductance
0.47
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
V
0.29
—
V/°C
—
—
—
—
—
—
2.25
2.4
4.0
—
25
250
Ω
—
—
—
—
—
—
—
—
—
10
100
-100
15
2.5
4.5
20
25
50
50
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
nC
VGS = 12V, ID = 0.3A ➃
VGS = 12V, ID = 0.5A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 0.3A ➃
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 0.5A
VDS = 125V
ns
VDD =125V, ID = 0.5A
VGS =12V, RG = 7.5Ω
V
S( )
Ω
Electrical Characteristics
µA
nA
nH
Measur ed from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
280
67
16
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
0.5
2.0
1.7
250
370
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 0.5A, VGS = 0V ➃
Tj = 25°C, IF = 0.5A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
17
90
°C/W
Test Conditions
Soldered to a Copper clad PB board
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHG7214
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➃
On-State Resistance (TO-3)
Static Drain-to-Source" ➃
On-State Resistance (MO-036AB)
Diode Forward Voltage" ➃
300 - 1000K Rads (Si)
Min
Max
Min
250
2.0
—
—
—
—
—
4.0
100
-100
25
2.25
250
1.25
—
—
—
—
—
2.25
—
1.70
Max
U
nits
Units
Test Conditions
—
4.5
100
-100
50
3.0
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=200V, VGS =0V
VGS = 12V, ID =0.3A
—
3.0
Ω
VGS = 12V, ID =0.3A
—
1.70
V
VGS = 0V, IS = 0.5A
V
nA
1. Part numbers IRHG7214
2. Part number IRHG3214, IRHG4214 and IRHG8214
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
Energy
MeV/(mg/cm ))
(MeV)
28.0
285
36.8
305
VDS(V)
Range
@VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V @VGS=-20V
(µm)
43
250
250
250
250
250
39
250
250
250
225
210
300
250
VDS
200
Cu
Br
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHG7214
Pre-Irradiation
10
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
1
4.5V
0.1
0.01
0.1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
1
4.5V
0.1
0.1
Fig 1. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 150° C
1
V DS = 50V
20µs PULSE WIDTH
6
8
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
10
4
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
0.1
20µs PULSE WIDTH
TJ = 150 °C
10
ID = 0.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
400
Ciss
Coss
200
Crss
0
20
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
600
IRHG7214
10
12
8
4
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
3
6
10
13
16
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
V DS= 200V
V DS= 125V
V DS= 50V
16
0
1
ID = 0.5A
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.1
0.4
0.6
0.8
1.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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1.2
100us
1
1ms
10ms
0.1
0.01
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHG7214
Pre-Irradiation
0.6
VGS
0.5
ID , Drain Current (A)
RD
VDS
D.U.T.
RG
+
-VDD
0.4
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.3
Fig 10a. Switching Time Test Circuit
0.2
VDS
0.1
0.0
90%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
10
D = 0.50
0.20
0.10
1
0.05
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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IRHG7214
15V
L
VDS
D.U.T
RG
V/5
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
Pre-Irradiation
200
ID
0.22A
0.32A
BOTTOM 0.5A
TOP
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHG7214
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 50V, starting TJ = 25°C, L=600mH
Peak IL = 0.5A, VGS =12V
➂ ISD ≤ 0.5A, di/dt ≤ 150A/µs,
VDD ≤ 250V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V DS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — MO-036AB
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Data and specifications subject to change without notice. 08/01
8
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