Diode Semiconductor Korea EF202 --- EF208 VOLTAGE RANGE: 200 --- 800 V CURRENT: 2.0 A SUPER FAST RECTIFIERS FEATURES Low cost Low leakage Low forward voltage drop High current capability DO - 15 Easily cleaned with alcohol,Isopropanol and similar solvents The plastic material carries U/Lrecognition 94V-0 MECHANICAL DATA Case:JEDEC DO--15,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.14 ounces,0.39 grams Mounting position: Any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 ambient temperature unless otherwise specified. Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%. EF202 EF204 EF204 EF208 UNITS Maximum recurrent peak reverse voltage VRRM 200 400 600 800 V Maximum RMS voltage VRMS 70 280 420 560 V Maximum DC blocking voltage VDC 200 400 600 800 V Maximum average forw ard rectified current 9.5mm lead length, @TA=75 IF(AV) 2.0 A IFSM 50 A Peak forw ard surge current 8.3ms single half-sine-w ave superimposed on rated load @TJ=125 Maximum instantaneous forw ard voltage @ 2.0A Maximum reverse current @TA=25 at rated DC blocking voltage @TA=100 VF 0.98 1.3 1.5 5.0 IR trr Typical junction capacitance (Note 2) CJ 62 Typical thermal resistance (Note 3) RθJA 40 TJ - 55 ----- + 150 TSTG - 55 ----- + 150 Operating junction temperature range Storage temperature range NOTE: 1. Measured with IF=0.5A, IR=1A, Irr=0.25A. 2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC. 3.Thermal resistance junction to ambient. 35 V A 200 Maximum reverse recovery time (Note 1) 1.7 50 ns pF ／Ｗ www.diode.kr Diode Semiconductor Korea EF202 --- EF208 FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 N 1. t rr 10 N 1. +0.5A D.U.T. (+) 25VDC (approx) (-) 0 OSCILLOSCOPE (NOTE 1) 1 NONINDUCTIVE PULSE GENERATOR (NOTE2) -0.25A -1.0A 1cm SET TIME BASE FOR 15/25 ns/cm NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF. JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 . EF204 EF206 EF202 2.0 EF208 1.0 TJ =25 Pulse Width=300 µ s 0.1 0 0.4 0.8 1.2 1.6 2.0 2.4 INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.3 -- FORWARD DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 3.0 CURRENT, AMPERES INSTANTANEOUS FORWARD FIG.2 -- TYPICAL FORWARD CHARACTERISTIC 100 60 40 20 10 6 4 2 1 TJ=25 f=1.0MHz 0.1 0.2 0.4 1 2 4 10 20 40 100 REVERSE VOLTAGE,VOLTS Single Phase Half Wave 60H Z Resistive or Inductive Load 0.375"(9.5mm)Lead Length 2.0 1.6 1.2 0.8 0.4 0 25 50 75 100 125 175 150 AMBIENT TEMPERATURE, FIG.5 -- PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT,AMPERES JUNCTION CAPACITANCE,pF FIG.4 -- TYPICAL JUNCTION CAPACITANCE 2.4 z 60 50 8.3ms Single Half Sine-Wave 40 30 20 10 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz INSTANTANEOUS REVERSE CURRENT,MICROAMPERES FIG.6 -- TYPICAL REVERSE CHARACTERISTICS 1000 100 T J =100 10 T J =75 TJ=25 1.0 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. www.diode.kr