Fairchild FOD3180 2a output current, high speed mosfet gate driver optocoupler Datasheet

FOD3180
2A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Description
■ Guaranteed operating temperature range of -40°C to
The FOD3180 is a 2A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETs used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
■
■
■
■
■
■
■
■
■
■
■
■
+100°C
2A minimum peak output current
High speed response: 200ns max propagation delay
over temperature range
250kHz maximum switching speed
30ns typ pulse width distortion
Wide VCC operating range: 10V to 20V
5000Vrms, 1 minute isolation
Under voltage lockout protection (UVLO) with
hysteresis
Minimum creepage distance of 7.0mm
Minimum clearance distance of 7.0mm
C-UL, UL and VDE* approved
RDS(ON) of 1.5Ω (typ.) offers lower power dissipation
15kV/µs minimum common mode rejection
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
Applications
■
■
■
■
■
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Functional Block Diagram
Package Outlines
FOD3180
NO CONNECTION 1
8 VCC
8
ANODE 2
7 OUTPUT
CATHODE 3
6 OUTPUT
NO CONNECTION 4
5 VEE
1
8
8
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
1
www.fairchildsemi.com
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
August 2008
Symbol
Parameter
Value
Units
TSTG
Storage Temperature
-40 to +125
°C
TOPR
Operating Temperature
-40 to +100
°C
Junction Temperature
-40 to +125
°C
TJ
260 for 10 sec.
°C
IF(AVG)
Average Input
Current(1)
25
mA
IF(tr, tf)
LED Current Minimum Rate of Rise/Fall
250
ns
IF(TRAN)
Peak Transient Input Current (<1µs pulse width, 300pps)
1.0
A
TSOL
VR
Lead Solder Temperature
Reverse Input Voltage
5
V
IOH(PEAK)
“High” Peak Output
Current(2)
2.5
A
IOL(PEAK)
“Low” Peak Output Current(2)
2.5
A
VCC – VEE
Supply Voltage
-0.5 to 25
V
VO(PEAK)
Output Voltage
0 to VCC
V
250
mW
295
mW
Dissipation(4)
PO
Output Power
PD
Total Power Dissipation(5)
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
Value
Units
Power Supply
10 to 20
V
IF(ON)
Input Current (ON)
10 to 16
mA
VF(OFF)
Input Voltage (OFF)
-3.0 to 0.8
V
VCC – VEE
Parameter
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
2
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings (TA = 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Over recommended operating conditions unless otherwise specified.
Symbol
Parameter
IOH
High Level Output Current(2)(3)
IOL
Current(2)(3)
Low Level Output
Output Voltage(6)(7)
Test Conditions
Min.
VOH = (VCC – VEE – 1V)
0.5
VOH = (VCC – VEE – 3V)
2.0
VOL = (VCC – VEE – 1V)
0.5
VOL = (VCC – VEE – 3V)
2.0
Max.
Unit
A
A
VOH
High Level
VOL
Low Level Output Voltage(6)(7)
IO = 100mA
ICCH
High Level Supply Current
Output Open,
IF = 10 to 16mA
ICCL
Low Level Supply Current
Output Open,
VF = -3.0 to 0.8V
IFLH
Threshold Input Current Low to
High
IO = 0mA, VO > 5V
VFHL
Threshold Input Voltage High to Low IO = 0mA, VO < 5V
0.8
Input Forward Voltage
IF = 10mA
1.2
∆VF / TA
Temperature Coefficient of Forward
Voltage
IF = 10mA
-1.5
mV/°C
VUVLO+
UVLO Threshold
VO > 5V, IF = 10mA
8.3
V
VO < 5V, IF = 10mA
7.7
V
0.6
V
VF
VUVLO–
IO = -100mA
Typ.*
VCC – 0.5
UVLOHYST UVLO Hysteresis
BVR
Input Reverse Breakdown Voltage
IR = 10µA
CIN
Input Capacitance
f = 1MHz, VF = 0V
V
VEE + 0.5
V
4.8
6.0
mA
5.0
6.0
mA
8.0
mA
V
1.43
5
1.8
V
V
60
pF
*Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
3
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
Symbol
Parameter
Test Conditions Min.
tPLH
Propagation Delay Time to High Output Level(8)
tPHL
Propagation Delay Time to Low Output Level(8)
IF = 10mA,
Rg = 10Ω,
f = 250kHz,
Duty Cycle = 50%,
Cg = 10nF
PWD
Pulse Width
Distortion(9)
Propagation Delay Difference Between Any
PDD
(tPHL – tPLH) Two Parts(10)
tr
Rise Time
tf
Fall Time
tUVLO ON
UVLO Turn On Delay
tUVLO OFF
UVLO Turn Off Delay
Typ.* Max.
Unit
50
135
200
ns
50
105
200
ns
65
ns
90
ns
-90
CL = 10nF,
Rg = 10Ω
75
ns
55
ns
2.0
µs
0.3
µs
| CMH |
Output High Level Common Mode Transient
Immunity(11) (12)
TA = +25°C,
If = 10 to 16mA,
VCM = 1.5kV,
VCC = 20V
15
kV/µs
| CML |
Output Low Level Common Mode Transient
Immunity(11) (13)
TA = +25°C,
Vf = 0V,
VCM = 1.5kV,
VCC = 20V
15
kV/µs
*Typical values at TA = 25°C
Isolation Characteristics
Symbol Parameter
Test Conditions
VISO
Withstand Isolation Voltage(14) (15) TA = 25°C,
R.H. < 50%, t = 1min.,
II-O ≤ 20µA
RI-O
Resistance (input to output)(15)
VI-O = 500V
CI-O
Capacitance (input to output)
Freq. = 1MHz
Min.
Typ.*
5000
Max.
Unit
Vrms
1011
Ω
1
pF
*Typical values at TA = 25°C
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
4
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
7.
8.
Maximum pulse width = 1ms, maximum duty cycle = 20%.
tPHL propagation delay is measured from the 50% level on the falling edge of the input pulse to the 50% level of the
falling edge of the VO signal. tPLH propagation delay is measured from the 50% level on the rising edge of the input
pulse to the 50% level of the rising edge of the VO signal.
9.
PWD is defined as | tPHL – tPLH | for any given device.
10. The difference between tPHL and tPLH between any two FOD3180 parts under same test conditions.
11. Pin 1 and 4 need to be connected to LED common.
12. Common mode transient immunity in the high state is the maximum tolerable dVCM/dt of the common mode pulse
VCM to assure that the output will remain in the high state (i.e. VO > 10.0V).
13. Common mode transient immunity in a low state is the maximum tolerable dVCM/dt of the common mode pulse,
VCM, to assure that the output will remain in a low state (i.e. VO < 1.0V).
14. In accordance with UL 1577, each optocoupler is proof tested by applying an insulation test voltage > 6000Vrms,
60Hz for 1 second (leakage detection current limit II-O < 5µA).
15. Device considered a two-terminal device: pins on input side shorted together and pins on output side shorted
together.
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
5
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Notes:
1. Derate linearly above +70°C free air temperature at a rate of 0.3mA/°C.
2. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 0.5Ω,
frequency = 8kHz, 50% DF.
3. The output currents IOH and IOL are specified with a capacitive current limited load = (3 x 0.01µF) + 8.5Ω,
frequency = 8kHz, 50% DF.
4. Derate linearly above +87°C, free air temperature at the rate of 0.77mW/°C. Refer to Figure 12.
5. No derating required across operating temperature range.
6. In this test, VOH is measured with a dc load current of 100mA. When driving capacitive load VOH will approach VCC
as IOH approaches zero amps.
Fig. 2 Low To High Input Current Threshold
vs. Ambient Temperature
Fig. 1 Input Forward Current vs. Forward Voltage
6
IFLH – LOW TO HIGH INPUT CURRENT
THRESHOLD (mA)
I F – FORWARD CURRENT (mA)
100
10
TA = -40°C
TA = 100°C
1
TA = 25°C
0.1
0.01
V = 10 to 20V
CC
VEE = 0
Output = Open
5
4
3
2
1
0
0.001
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40
2.2
-20
Fig. 3 Output Low Voltage vs. Ambient Temperature
(VOH - VCC) – HIGH OUTPUT VOLTAGE DROP (V)
V OL – OUTPUT LOW VOLTAGE (V)
VF(OFF) = -3.0V to 0.8V
IOUT = 100mA
V = 10V to 20V
CC
VEE = 0
0.20
0.15
0.10
0.05
0.00
-40
-20
0
20
40
60
40
60
80
100
80
0.00
V
CC
= 10 to 20V, VEE = 0
IF = 10mA to 16mA
IOUT = -100 mA
-0.05
-0.10
-0.15
-0.20
-0.25
-0.30
100
-40
-20
TA – AMBIENT TEMPERATURE (°C)
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 Supply Current vs. Ambient Temperature
Fig. 6 Supply Current vs. Supply Voltage
6.2
6.2
V
CC
= 20V, VEE = 0
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
IF = 10mA (for ICCH)
IF = 0mA (for ICCL)
5.8
I CC – SUPPLY CURRENT (mA)
5.8
I CC – SUPPLY CURRENT (mA)
20
Fig. 4 High Output Voltage Drop vs. Ambient Temperature
0.30
0.25
0
TA – AMBIENT TEMPERATURE (°C)
VF – FORWARD VOLTAGE (V)
5.4
ICCL
5.0
ICCH
4.6
4.2
3.8
TA = 25oC, VEE = 0V
5.4
5.0
ICCL
ICCH
4.6
4.2
3.8
-40
-20
0
20
40
60
80
100
10
TA – AMBIENT TEMPERATURE (°C)
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
12
14
16
18
20
VCC – SUPPLY VOLTAGE (V)
www.fairchildsemi.com
6
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves
Fig. 8 Propagation Delay vs. Forward LED Current
Fig. 7 Propagation Delay vs. Load Capacitance
200
200
VCC = 20V, VEE = 0
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
TA = 25oC
VCC = 20V, VEE = 0
IF = 10mA, TA = 25oC
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
t P – PROPAGATION DELAY (ns)
t P – PROPAGATION DELAY (ns)
180
160
tPHL
140
120
tPLH
100
80
180
160
tPHL
140
120
tPLH
100
80
60
60
5
10
15
20
25
6
8
CG – LOAD CAPACITANCE (nF)
12
14
16
Fig. 10 Propagation Delay vs. Ambient Temperature
Fig. 9 Propagation Delay vs. Series Load Resistance
200
200
VCC = 20V, VEE = 0
VCC = 20V, VEE = 0
IF = 10mA, TA = 25oC
CG = 10nF
f = 250 kHz, D. Cycle = 50%
180
t P – PROPAGATION DELAY (ns)
t P – PROPAGATION DELAY (ns)
10
IF – FORWARD LED CURRENT (mA)
160
140
tPHL
120
tPLH
100
80
IF = 10mA
RG = 10Ω, CG = 10nF
f = 250kHz, D. Cycle = 50%
180
160
140
tPHL
120
tPLH
100
80
60
60
10
20
30
40
50
-40
RG – SERIES LOAD RESISTANCE (Ω)
-20
0
20
40
60
80
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 11 Propagation Delay vs. Supply Voltage
180
t P – PROPAGATION DELAY (ns)
IF = 10mA, TA = 25oC
RG = 10Ω, CG = 10nF
f = 250 kHz, D. Cycle = 50%
160
140
tPHL
120
tPLH
100
80
60
10
15
20
25
VCC – SUPPLY VOLTAGE (V)
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
7
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Typical Performance Curves (Continued)
Through Hole
0.4" Lead Spacing
PIN 1
ID.
4
3
2
PIN 1
ID.
1
4
3
2
1
0.270 (6.86)
0.250 (6.35)
5
6
7
0.270 (6.86)
0.250 (6.35)
8
5
6
0.070 (1.78)
0.045 (1.14)
0.020 (0.51) MIN
0.200 (5.08)
0.140 (3.55)
0.154 (3.90)
0.120 (3.05)
0.022 (0.56)
0.016 (0.41)
7
8
0.390 (9.91)
0.370 (9.40)
SEATING PLANE
SEATING PLANE
0.390 (9.91)
0.370 (9.40)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
0.070 (1.78)
0.045 (1.14)
0.004 (0.10) MIN
0.200 (5.08)
0.140 (3.55)
15° MAX
0.154 (3.90)
0.120 (3.05)
0.300 (7.62)
TYP
0.022 (0.56)
0.016 (0.41)
0.016 (0.40)
0.008 (0.20)
0.100 (2.54) TYP
Surface Mount
0° to 15°
0.400 (10.16)
TYP
8-Pin DIP – Land Pattern
0.390 (9.91)
0.370 (9.40)
4
3
2
1
0.070 (1.78)
PIN 1
ID.
0.060 (1.52)
0.270 (6.86)
0.250 (6.35)
5
6
7
0.100 (2.54)
8
0.295 (7.49)
0.070 (1.78)
0.045 (1.14)
0.020 (0.51)
MIN
0.022 (0.56)
0.016 (0.41)
0.100 (2.54)
TYP
Lead Coplanarity : 0.004 (0.10) MAX
0.415 (10.54)
0.300 (7.62)
TYP
0.030 (0.76)
0.016 (0.41)
0.008 (0.20)
0.045 (1.14)
0.315 (8.00)
MIN
0.405 (10.30)
MAX.
Note:
All dimensions are in inches (millimeters)
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
8
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Package Dimensions
Option
Order Entry Identifier
(Example)
No option
FOD3180
S
FOD3180S
SD
FOD3180SD
T
FOD3180T
0.4" Lead Spacing
V
FOD3180V
VDE 0884
TV
FOD3180TV
VDE 0884, 0.4" Lead Spacing
SV
FOD3180SV
VDE 0884, Surface Mount
SDV
FOD3180SDV
Description
Standard Through Hole Device
Surface Mount, Lead Bend
Surface Mount, Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
3180
XX YY B
V
3
2
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
Two digit year code, e.g., ‘03’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
9
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Ordering Information
D0
P0
t
K0
P2
E
F
A0
W1
d
t
P
User Direction of Feed
Symbol
W
W
B0
Description
D1
Dimension in mm
Tape Width
16.0 ± 0.3
Tape Thickness
0.30 ± 0.05
P0
Sprocket Hole Pitch
4.0 ± 0.1
D0
Sprocket Hole Diameter
1.55 ± 0.05
E
Sprocket Hole Location
1.75 ± 0.10
F
Pocket Location
7.5 ± 0.1
4.0 ± 0.1
P2
P
Pocket Pitch
A0
Pocket Dimensions
12.0 ± 0.1
10.30 ±0.20
B0
10.30 ±0.20
K0
4.90 ±0.20
W1
d
R
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
Cover Tape Width
1.6 ± 0.1
Cover Tape Thickness
0.1 max
Max. Component Rotation or Tilt
10°
Min. Bending Radius
30
www.fairchildsemi.com
10
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Carrier Tape Specifications
245 C, 10–30 s
Temperature (°C)
300
260 C peak
250
200
150
Time above 183C, <160 sec
100
50
Ramp up = 2–10C/sec
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
Time (Minute)
• Peak reflow temperature: 260 C (package surface temperature)
• Time of temperature higher than 183 C for 160 seconds or less
• One time soldering reflow is recommended
Output Power Derating
The maximum package power dissipation is 295mW. The
package is limited to this level to ensure that under normal
operating conditions and over extended temperature
range that the semiconductor junction temperatures do
not exceed 125°C. The package power is composed of
three elements; the LED, static operating power of the
output IC, and the power dissipated in the output power
MOSFET transistors. The power rating of the output IC is
250mW. This power is divided between the static power of
the integrated circuit, which is the product of IDD times the
power supply voltage (VDD – VEE). The maximum IC
static output power is 150mW, (VDD – VEE) = 25V, IDD =
6mA. This maximum condition is valid over the operational temperature range of -40°C to +100°C. Under these
maximum operating conditions, the output of the power
MOSFET is allowed to dissipate 100mW of power.
The output power is the product of the average output
current squared times the output transistor’s RDS(ON):
PO(AVG) = IO(AVG)2 • RDS(ON)
The IO(AVG) is the product of the duty factor times the
peak
current flowing in the output. The duty factor is
the ratio of the ‘on’ time of the output load current divided
by the period of the operating frequency. An RDS(ON) of
2.0Ω results in an average output load current of 200mA.
The load duty factor is a ratio of the average output time
of the power MOSFET load circuit and period of the driving frequency.
The maximum permissible, operating frequency is determined by the load supplied to the output at its resulting
output pulse width. Figure 13 shows an example of a
0.03µF gate to source capacitance with a series resistance of 8.50Ω. This reactive load results in a composite
average pulse width of 1.5µs. Under this load condition it
is not necessary to derate the absolute maximum output
current until the frequency of operation exceeds 63kHz.
The absolute maximum output power dissipation versus
ambient temperature is shown in Figure 12. The output
driver is capable of supplying 100mW of output power
over the temperature range from -40°C to 87°C. The output derates to 90mW at the absolute maximum operating
temperature of 100°C.
Fig. 13 Output Current Derating vs. Frequency
Fig. 12 Absolute Maximum Power Dissipation
vs. Ambient Temperature
2.5
0.15
IO – PEAK OUTPUT CURRENT (A)
POWER DISSIPATION (W)
VDD – VEE = Max. = 25V
IDD = 6mA
LED Power = 45mW
0.1
0.05
2
1.5
TA = -40°C to 100°C
Load = .03µF +8.5Ω
VDD = 20V
IF = 12mA
LED Duty Factor = 50%
1
Output Pulse Width = 1.5µs
0.5
0
1
0
-40
-20
0
20
40
60
80
10
100
F – FREQUENCY (kHz)
100
TA – AMBIENT TEMPERATURE (°C)
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
11
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Reflow Profile
Figure 14 illustrates the relationship of the LED input
drive current and the device’s output voltage and sourcing and sinking currents. The 0.03µF capacitor load represents the gate to source capacitance of a very large
power MOSFET transistor. A single supply voltage of
20V is used in the evaluation.
This device is tested and specified when driving a complex reactive load. The load consists of a capacitor in the
series with a current limiting resistor. The capacitor represents the gate to source capacitance of a power
MOSFET transistor. The test load is a 0.03µF capacitor
in series with an 8.5Ω resistor. The LED test frequency is
10.0kHz with a 50% duty cycle. The combined IOH and
IOL output load current duty factor is 0.6% at the test
frequency.
Figure 15 shows the test schematic to evaluate the output voltage and sourcing and sinking capability of the
device. The IOH and IOL are measured at the peak of
their respective current pulses.
IF = 8mA
LED
OFF
ON
20V
N-Channel (ON)
P-Channel (ON)
OUTPUT
0
IOH = 2.2A
Load
Current
IOL = 2.2A
1µs/Div
Figure 14. FOD 3180 Output Current and Output Voltage vs. LED Drive
Pulse
Generator
FOD3180
8
1
0.1µF
2
7
IOMON
VO
0.33µF
IFMON
100Ω
3
6
4
5
8.5Ω
22µF
100Ω
Figure 15. Test Schematic
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
12
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
IOH and IOL Test Conditions
PDP SPM™
Power-SPM™
PowerTrench®
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
FPS™
F-PFS™
FRFET®
SM
Global Power Resource
Green FPS™
Green FPS™e-Series™
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Rev. I35
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
13
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
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