MCH3359 Ordering number : ENN8108 MCH3359 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --30 Gate-to-Source Voltage VGSS ±20 V ID --1.2 A Drain Current (DC) Drain Current (Pulse) IDP PD Allowable Power Dissipation PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) V --4.8 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS=±16V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--0.6A RDS(on)1 RDS(on)2 ID=--0.6A, VGS=--10V ID=--0.3A, VGS=--4V Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Turn-OFF Delay Time Fall Time ID=--1mA, VGS=0 VDS=--30V, VGS=0 VGS(off) yfs Input Capacitance Rise Time Conditions td(off) tf Ratings min typ Unit max --30 V VDS=--10V, f=1MHz VDS=--10V, f=1MHz µA ±10 µA --2.6 V 320 420 mΩ 590 830 mΩ --1.2 0.6 --1 1.0 S 104 pF 22 pF 17 pF VDS=--10V, f=1MHz See specified Test Circuit. 12.5 ns See specified Test Circuit. 24 ns See specified Test Circuit. 12 ns See specified Test Circuit. 12.2 ns Marking : WL Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2504 TS IM TB-00000657 No.8108-1/4 MCH3359 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.2A 3.3 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.2A 0.48 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.2A 0.45 Diode Forward Voltage VSD IS=--1.2A, VGS=0 Package Dimensions unit : mm 2167A 0.3 0.25 --1.5 V Switching Time Test Circuit VDD= --15V VIN 0V --10V 0.15 3 ID= --0.6A RL=25Ω VIN 1.6 2.1 nC --0.91 D VOUT G 2.0 MCH3359 3 0.85 1 : Gate 2 : Source 3 : Drain 1 VDS= --10V --1.8 --4 --6 ID -- VGS --2.0 .0V .0V .0V --1.6 --3.0V --0.6 --0.4 VGS= --2.5V --1.4 --1.2 --1.0 --0.8 --0.6 25° C --0.4 --0.2 --0.2 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 0 800 --600mA ID= --300mA 400 200 0 0 --2 --4 --6 --8 --10 --12 --14 --16 Gate-to-Source Voltage, VGS -- V --18 --20 IT07282 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 IT07280 RDS(on) -- Ta 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1000 --1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 600 --0.5 IT07278 RDS(on) -- VGS 1200 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta= --25 75°C °C --0.8 Drain Current, ID -- A --1 0 --1.0 S SANYO : MCPH3 ID -- VDS --1.2 50Ω 2 (Top view) Drain Current, ID -- A P.G Ta= --25 °C 75° C (Bottom view) C 1 25° 0.25 2 0.65 0.07 PW=10µs D.C.≤1% 1000 800 I D= -- 600 = --4V , VGS A m 300 = --10V mA, V GS I D= --600 400 200 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT07284 No.8108-2/4 MCH3359 yfs -- ID VGS=0 2 3 --1.0 °C 25 5 °C 1.0 7 = Ta 5 --2 C 75° 3 7 5 3 2 Ta= 75 ° C 25° C --25° C 2 --0.1 7 5 3 2 2 0.1 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A --0.01 --0.4 3 --0.5 --0.6 --0.8 --0.9 --1.0 --1.1 --1.2 IT07288 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V 2 --0.7 Diode Forward Voltage, VSD -- V IT07286 SW Time -- ID 3 f=1MHz 2 Ciss, Coss, Crss -- pF 100 7 5 3 tf Switching Time, SW Time -- ns IF -- VSD 3 VDS= --10V Forward Current, IF -- A Forward Transfer Admittance, yfs -- S 5 2 td(off) td(on) 10 tr 7 Ciss 100 7 5 3 Coss Crss 2 5 3 2 --0.01 10 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Drain Current, ID -- A 2 Drain Current, ID -- A Total Gate Charge, Qg -- nC 3.5 IT07294 PD -- Ta 1.0 0.8 ) °C 3.0 Operation in this area is limited by RDS(on). 25 2.5 a= (T 2.0 s 1.5 m 1.0 on 0.5 ati --0.1 7 5 2 0 s 3 2 3 --1 10 --2 er --3 ID= --1.2A --1.0 7 5 0m --4 --30 IT07292 <10µs 10 0µ 1m s s IDP= --4.8A op --5 --25 10 --6 --20 DC Gate-to-Source Voltage, VGS -- V 3 --7 --15 ASO 7 5 --8 0 --10 Drain-to-Source Voltage, VDS -- V VDS= --10V ID= --1.2A --9 --5 IT07290 VGS -- Qg --10 Allowable Power Dissipation, PD -- W 0 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) --0.01 --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT08248 M ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 0.2 .8m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT08249 No.8108-3/4 MCH3359 Note on usage : Since the MCH3359 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2004. Specifications and information herein are subject to change without notice. PS No.8108-4/4