BAW56LT1 Preferred Device Dual Switching Diode Common Anode Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS (EACH DIODE) Symbol Value Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA 4 A Symbol Max Unit PD 225 mW Rating Peak Forward Surge Current Non−Repetitive Peak Forward Current t = 1 ms (Note 3) CATHODE 1 ANODE 3 2 CATHODE IFSM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C SOT−23 (TO−236) CASE 318 STYLE 12 1 2 1.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C PD 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W TJ, Tstg −55 to +150 °C Junction and Storage Temperature 3 MARKING DIAGRAM A1 M G G 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave; Tj = 25°C. A1 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping † BAW56LT1 SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel SOT−23 10,000 / Tape & Reel SOT−23 (Pb−Free) 10,000 / Tape & Reel BAW56LT1G BAW56LT3 BAW56LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2007 January, 2007 − Rev. 5 1 Publication Order Number: BAW56LT1/D BAW56LT1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Reverse Breakdown Voltage (I(BR) = 100 mA) Symbol Min Max Unit V(BR) 70 − V − − − 30 2.5 50 − 2.0 − − − − 715 855 1000 1250 − 6.0 Reverse Voltage Leakage Current mA IR (VR = 25 V, TJ = 150°C) (VR = 70 V) (VR = 70 V, TJ = 150°C) Diode Capacitance CD pF (VR = 0 V, f = 1.0 MHz) Forward Voltage VF mV (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1) trr RL = 100 W ns 820 W +10 V 2.0 k 100 mH tr 0.1 mF IF tp t IF trr 10% t 0.1 mF 90% D.U.T. 50 W OUTPUT PULSE GENERATOR 50 W INPUT SAMPLING OSCILLOSCOPE VR IR INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit http://onsemi.com 2 iR(REC) = 1.0 mA OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) BAW56LT1 Curves Applicable to Each Cathode 10 IR , REVERSE CURRENT (μA) TA = 85°C 10 TA = −40°C 1.0 0.1 TA = 25°C 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 150°C TA = 25°C 10 0 Figure 2. Forward Voltage 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Leakage Current 1.75 CD, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 100 1.5 1.25 1.0 0.75 0 2 4 6 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://onsemi.com 3 8 50 BAW56LT1 PACKAGE DIMENSIONS SOT−23−3 (TO−236) CASE 318−08 ISSUE AL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D 3 1 E HE 2 e DIM A A1 b c D E e L HE A b A1 C L MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.029 0.104 STYLE 12: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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