PNP Switching Transistor Data Sheet Mechanical Dimensions FMBT4403 Description .110 .060 3 3 .115 .037 2 2 1 .037 1 .016 2 3 1 .043 .016 .004 Maximum Ratings Ratings Collector - Emitter Voltage Symbol VCEO Collector - Base Voltage Emitter - Base Voltage Collector Current (Continuous) Total Device Dissipation FR-5 Board (Note1) TA = 25oC Value 40 Units V VCBO 40 V VEBO 5.0 V IC PD 600 350 mA mW TJ, TSTG -55 to 150 Symbol VBR(CEO) Min 40 Max --- Unit V Collector - Base Breakdown Voltage (IC = 0.1mA) VBR(CBO) 40 --- V Emitter - Base Breakdown Voltage (IE = 0.01mA) VBR(EBO) 6.0 --- V Collector Cutoff Current (VCE = 35V, VEB = 0.4V) ICEX --- 0.1 µA DC Current Gain (IC = 0.1 mA, VCE = 1.0 V) (IC = 1.0 mA, VCE = 1.0 V) (IC = 10 mA, VCE = 1.0 V) (IC = 150 mA, VCE = 2.0 V) (IC = 500 mA, VCE = 2.0 V) HFE 30 60 100 100 20 ------300 --- ----- 0.4 0.75 ----- 0.95 1.3 200 --- Junction and Storage Temperature Electrical Characteristics @ 25oC Characteristic Collector - Emitter Breakdown Voltage (IC = 1.0mA) Collector - Emitter Saturation Voltage (Note 3) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) VCE(sat) Base - Emitter Saturation Voltage (Note 3) (IC = 150 mA, IB = 15 mA) (IC = 500 mA, IB = 50 mA) VBE(sat) Current - Gain - Bandwidth Product (IC = 20 mA, VCE = 10 V) fT C o --- V V MHz Data Sheet FMBT4403 PNP Switching Transistor