UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES *Suitable for AF-Driver stages and low power output stages *Complement to BC327/328 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL Collector-emitter voltage : BC337 : BC338 Collector-emitter voltage : BC337 : BC338 Emitter-base voltage Collector current (DC) Collector dissipation Junction Temperature Storage Temperature RATING UNIT 50 30 V V 45 25 5 800 625 150 -55 ~ +150 V V V mA mW °C °C VCES VCEO VEBO Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-emitter breakdown voltage : BC337 : BC338 Collector-emitter breakdown voltage : BC337 : BC338 Emitter-base breakdown voltage Collector Cut-off Current : BC337 : BC338 DC current gain BVCEO Ic=10mA, IB=0 Collector-emitter saturation voltage UTC BVCES BVEBO ICES hFE1 hFE2 VCE(sat) MIN TYP MAX UNIT 45 25 V V 50 30 5 V V V Ic=0.1mA, VBE=0 IE=0.1mA, Ic=0 VCE=45V, IB=0 VCE=25V, IB=0 VCE=1V, Ic=100mA VCE=1V, Ic=300mA Ic=500mA, IB=50mA 2 2 100 60 100 100 630 nA nA 0.7 V UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R201-039,B UTC BC337/338 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL TEST CONDITIONS Base-emitter on voltage Current gain bandwidth product Output Capacitance VBE(on) fT Cob VCE=1V, Ic=300mA VCE=5V, Ic=10mA, f=50MHz VCB=10V, IE=0, f=1MHz MIN TYP MAX UNIT 1.2 V MHz pF 100 12 CLASSIFICATION OF hFE1 RANK hFE1 UTC 16 100-250 25 160-400 40 250-630 UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R201-039,B