LRC LDTA143EM3T5G Bias resistor transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
With Monolithic Bias Resistor Network
LDTA114EM3T5G
Series
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
3
2
1
SOT-723
ƽSimplifies Circuit Design
ƽReduces Board Space
ƽReduces Component Count
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
PIN 1
BASE
(INPUT)
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
ƽ We declare that the material of product compliance with
RoHS requirements.
PIN 3
COLLECTOR
(OUTPUT)
R1
R2
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
Collector-Base Voltage
VCBO
50
Vdc
Collector-Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
mW
Rating
Collector Current
MARKING DIAGRAM
3
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
mW/°C
Thermal Resistance –
Junction-to-Ambient
RθJA
480 (Note 1)
205 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
XX M
1
xx
M
2
= Specific Device Code
= Date Code
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
1/ 11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES
Device
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
Marking
R1 (K)
R2 (K)
Package
Shipping
6A
6B
6C
6D
6E
6F
6H
6J
6K
6L
6M
6N
6P
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
10
22
47
47
∞
∞
2.2
4.7
47
47
47
100
22
SOT−723
8000/Tape & Reel
2/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
ICBO
−
−
100
nAdc
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
ICEO
−
−
500
nAdc
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 3.)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
8.0
15
80
80
80
80
80
60
100
140
140
250
250
15
27
140
130
140
150
140
−
−
−
−
−
−
−
−
−
−
−
−
−
VCE(sat)
−
−
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
4.9
−
−
OFF CHARACTERISTICS
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
ON CHARACTERISTICS (Note 3.)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA)
(IC = 10 mA, IB = 5 mA) LDTA123EM3T5G
(IC = 10 mA, IB = 1 mA) LDTA114TM3T5G/LDTA143TM3T5G/
LDTA143ZM3T5G/LDTA124XM3T5G/LDTA143EM3T5G
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
VOL
LDTA114EM3T5G
LDTA124EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA144EM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
VOH
Vdc
Vdc
Vdc
3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
3/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Input Resistor
LDTA114EM3T5G
LDTA124EM3T5G
LDTA144EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G
LDTA143TM3T5G
LDTA123EM3T5G
LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA115EM3T5G
LDTA144WM3T5G
PD , POWER DISSIPATION (MILLIWATTS)
Resistor Ratio LDTA114EM3T5G/LDTA124EM3T5G/LDTA144EM3T5G
/
LDTA115EM3T5G
LDTA114YM3T5G
LDTA114TM3T5G/LDTA143TM3T5G
LDTA123EM3T5G/LDTA143EM3T5G
LDTA143ZM3T5G
LDTA124XM3T5G
LDTA123JM3T5G
LDTA144WM3T5G
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
2.9
6.1
6.1
28.6
2.86
130
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
R1/R2
300
250
200
150
100
50
0
−50
RqJA = 480°C/W
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
4/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
1000
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114EM3T5G
TA=−25°C
0.1
25°C
75°C
0.01
0
20
40
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
100
10
50
VCE = 10 V
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) versus IC
Figure 3. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 4. Output Capacitance
100
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
3
100
50
25°C
75°C
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
1
0
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 5. Output Current versus Input Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
5/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
1000
10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA124EM3T5G
IC/IB = 10
1
25°C
TA=−25°C
75°C
0.1
0.01
0
40
20
IC, COLLECTOR CURRENT (mA)
TA=75°C
1
10
Figure 8. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
3
2
1
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 9. Output Capacitance
100
25°C
75°C
f = 1 MHz
lE = 0 V
TA = 25°C
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
4
0
100
IC, COLLECTOR CURRENT (mA)
Figure 7. VCE(sat) versus IC
0
25°C
−25°C
100
10
50
VCE = 10 V
TA=−25°C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
Figure 10. Output Current versus Input Voltage
VO = 0.2 V
TA=−25°C
10
25°C
75°C
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
6/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
1
1000
IC/IB = 10
TA=−25°C
25°C
75°C
0.1
0.01
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA144EM3T5G
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
−25°C
100
10
40
1
10
IC, COLLECTOR CURRENT (mA)
Figure 12. VCE(sat) versus IC
Figure 13. DC Current Gain
1
IC, COLLECTOR CURRENT (mA)
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
25°C
TA=75°C
−25°C
10
1
0.1
0.01
0.001
Figure 14. Output Capacitance
VO = 5 V
0
1
2
3
4
5
6
7
Vin, INPUT VOLTAGE (VOLTS)
8
10
9
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25°C
0.8
100
TA=−25°C
25°C
75°C
10
1
0.1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 16. Input Voltage versus Output Current
7/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − LDTA114YM3T5G
TA=−25°C
25°C
0.1
75°C
0.01
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
25°C
140
−25°C
120
100
80
60
40
20
0
80
TA=75°C
VCE = 10 V
160
1
2
4
6
Figure 17. VCE(sat) versus IC
100
3.5
IC, COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6 8 10 15 20 25 30 35 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
45
Figure 19. Output Capacitance
50
25°C
−25°C
10
VO = 5 V
1
0
2
4
6
Vin, INPUT VOLTAGE (VOLTS)
10
+12 V
VO = 0.2 V
V in , INPUT VOLTAGE (VOLTS)
8
Figure 20. Output Current versus Input Voltage
10
25°C
75°C
TA=−25°C
Typical Application
for PNP BRTs
1
0.1
80 90 100
Figure 18. DC Current Gain
4.5
0
8 10 15 20 40 50 60 70
IC, COLLECTOR CURRENT (mA)
LOAD
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
Figure 21. Input Voltage versus Output Current
Figure 22. Inexpensive, Unregulated Current Source
8/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
75°C
25°C
−25°C
IC/IB = 10
0.01
0
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
7
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA115EM3T5G
1000
75°C
TA = −25°C
100
25°C
10
VCE = 10 V
1
1
10
IC, COLLECTOR CURRENT (mA)
Figure 23. Maximum Collector Voltage versus
Collector Current
Figure 24. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
25°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
75°C
10
TA = −25°C
1
VO = 5 V
0.1
0
0
1
2
3
4
5
6
7
8
9
10
Vin, INPUT VOLTAGE (VOLTS)
Figure 25. Output Capacitance
Figure 26. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.2
0
100
25°C
TA = −25°C
10
1
75°C
0
2
VO = 0.2 V
14
16
4
6
8
10 12
IC, COLLECTOR CURRENT (mA)
18
20
Figure 27. Input Voltage versus Output Current
9/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
IC/IB = 10
0.01
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
50
hFE, DC CURRENT GAIN (NORMALIZED)
TYPICAL ELECTRICAL CHARACTERISTICS — LDTA144WM3T5G
1000
75°C
TA = −25°C
100
25°C
VCE = 10 V
10
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage versus
Collector Current
Figure 29. DC Current Gain
100
1.2
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
IE = 0 V
TA = 25°C
1.0
0.8
0.6
0.4
0.2
75°C
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
60
TA = −25°C
10
25°C
1
0.1
0.01
0.001
0
VO = 5 V
0
1
2
3
4
5
6
7
8
9
10
11
Vin, INPUT VOLTAGE (VOLTS)
Figure 30. Output Capacitance
Figure 31. Output Current versus Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
0
100
VO = 0.2 V
TA = −25°C
10
1
75°C
25°C
0
20
5
10
15
IC, COLLECTOR CURRENT (mA)
25
Figure 32. Input Voltage versus Output Current
10/11
LESHAN RADIO COMPANY, LTD.
LDTA114EM3T5G_Series
PACKAGE DIMENSIONS
SOT−723
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
−X−
D
A
b1
−Y−
3
E
1
e
HE
L
2
b 2X
0.08 (0.0032) X Y
C
PIN 1. BASE
2. EMITTER
3. COLLECTOR
DIM
A
b
b1
C
D
E
e
HE
L
MILLIMETERS
MIN
NOM
MAX
0.45
0.50
0.55
0.15
0.20
0.27
0.25
0.3
0.35
0.07
0.12
0.17
1.15
1.20
1.25
0.75
0.80
0.85
0.40 BSC
1.15
1.20
1.25
0.15
0.20
0.25
INCHES
MIN
NOM
MAX
0.018 0.020 0.022
0.0059 0.0079 0.0106
0.010 0.012 0.014
0.0028 0.0047 0.0067
0.045 0.047 0.049
0.03 0.032 0.034
0.016 BSC
0.045 0.047 0.049
0.0059 0.0079 0.0098
SOLDERING FOOTPRINT
0.40
0.0157
0.40
0.0157
1.0
0.039
0.40
0.0157
0.40
0.0157
0.40
0.0157
mm Ǔ
ǒinches
11/11