BZD27C3V6P to BZD27C200P Vishay Semiconductors Zener Diodes with Surge Current Specification Features • • • • • • Sillicon Planar Zener Diodes Low profile surface-mount package e3 Zener and surge current specification Low leakage current Excellent stability High temperature soldering: 260 °C/10 sec. at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Case: JEDEC DO-219AB Weight: approx. 15 mg (SMF®) Plastic case 17249 Packaging codes/options: GS18 / 10 k per 13 " reel, (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel, (8 mm tape), 30 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation Symbol Value Unit TL = 80 °C Test condition Ptot 2.3 W TA = 25 °C Ptot 1) W PZSM 300 W PRSM 150 W PRSM 100 W Symbol Value Unit RthJA 180 K/W K/W Non-repetitive peak pulse power 100 µs square pulse2) dissipation 10/1000 µs waveform (BZD27- 0.8 C7V5P to BZD27-C100P)2) 10/1000 µs waveform (BZD27C110P to BZD27-C200P)2) 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick) 2) TJ = 25 °C prior to surge Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air1) RthJL 30 Maximum junction temperature Thermal resistance junction to lead Tj 150 °C Storage temperature range TS - 55 to + 150 °C 1) Mounted on epoxy-glass PCB with 3 x 3 mm Cu pads (≥ 40 µm thick) Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Document Number 85810 Rev. 1.8, 13-Apr-05 Test condition IF = 0.2 A Symbol VF Min Typ. Max Unit 1.2 V www.vishay.com 1 BZD27C3V6P to BZD27C200P Vishay Semiconductors Electrical Characteristics When used as voltage regulator diodes (TJ = 25 °C unless otherwise noted) Partnumber 1) Working Voltage1) Differential Resistance Temperature Coefficient VZ @ IZT rdif @ IZ α Z @ IZ IZT IR VR V Ω %/°C mA µA V min max typ max min max Test Current Reverse Current at Reverse Voltage max BZD27C3V6P D0 3.4 3.8 4 8 -0.14 -0.04 100 100 BZD27C3V9P D1 3.7 4.1 4 8 -0.14 -0.04 100 50 1 BZD27C4V3P D2 4 4.6 4 7 -0.12 -0.02 100 25 1 BZD27C4V7P D3 4.4 5 3 7 -0.1 0 100 10 1 BZD27C5V1P D4 4.8 5.4 3 6 -0.08 0.02 100 5 1 BZD27C5V6P D5 5.2 6 2 4 -0.04 0.04 100 10 2 BZD27C6V2P D6 5.8 6.6 2 3 -0.01 0.06 100 5 2 BZD27C6V8P D7 6.4 7.2 1 3 0 0.07 100 10 3 BZD27C7V5P D8 7 7.9 1 2 0 0.07 100 50 3 BZD27C8V2P D9 7.7 8.7 1 2 0.03 0.08 100 10 3 BZD27C9V1P E0 8.5 9.6 2 4 0.03 0.08 50 10 5 BZD27C10P E1 9.4 10.6 2 4 0.05 0.09 50 7 7.5 BZD27C11P E2 10.4 11.6 4 7 0.05 0.1 50 4 8.2 BZD27C12P E3 11.4 12.7 4 7 0.05 0.1 50 3 9.1 BZD27C13P E4 12.4 14.1 5 10 0.05 0.1 50 2 10 BZD27C15P E5 13.8 15.6 5 10 0.05 0.1 50 1 11 BZD27C16P E6 15.3 17.1 6 15 0.06 0.11 25 1 12 BZD27C18P E7 16.8 19.1 6 15 0.06 0.11 25 1 13 BZD27C20P E8 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD27C22P E9 20.8 23.3 6 15 0.06 0.11 25 1 16 BZD27C24P F0 22.8 25.6 7 15 0.06 0.11 25 1 18 BZD27C27P F1 25.1 28.9 7 15 0.06 0.11 25 1 20 BZD27C30P F2 28 32 8 15 0.06 0.11 25 1 22 BZD27C33P F3 31 35 8 15 0.06 0.11 25 1 24 BZD27C36P F4 34 38 21 40 0.06 0.11 10 1 27 BZD27C39P F5 37 41 21 40 0.06 0.11 10 1 30 BZD27C43P F6 40 46 24 45 0.07 0.12 10 1 33 BZD27C47P F7 44 50 24 45 0.07 0.12 10 1 36 BZD27C51P F8 48 54 25 60 0.07 0.12 10 1 39 BZD27C56P F9 52 60 25 60 0.07 0.12 10 1 43 BZD27C62P G0 58 66 25 80 0.08 0.13 10 1 47 BZD27C68P G1 64 72 25 80 0.08 0.13 10 1 51 BZD27C75P G2 70 79 30 100 0.08 0.13 10 1 56 BZD27C82P G3 77 87 30 100 0.08 0.13 10 1 62 BZD27C91P G4 85 96 60 200 0.08 0.13 5 1 68 BZD27C100P G5 94 106 60 200 0.09 0.13 5 1 75 BZD27C110P G6 104 116 80 250 0.09 0.13 5 1 82 BZD27C120P G7 114 127 80 250 0.09 0.13 5 1 91 BZD27C130P G8 124 141 110 300 0.09 0.13 5 1 100 BZD27C150P G9 138 156 130 300 0.09 0.13 5 1 110 BZD27C160P H0 153 171 150 350 0.09 0.13 5 1 120 BZD27C180P H1 168 191 180 400 0.09 0.13 5 1 130 BZD27C200P H2 188 212 200 500 0.09 0.13 5 1 150 1 Pulse test: tp ≤ 5 ms. www.vishay.com 2 Marking Code Document Number 85810 Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P Vishay Semiconductors Electrical Characteristics When used as protection diodes (TJ = 25 °C unless otherwise noted) Partnumber Rev. Breakdown Voltage Test Current Temperature Coefficient V(BR)R at Itest Itest αZ @ Itest V mA min 1) %/°C Clamping Voltage VC at IRSM1) V A min max max Reverse Current at Stand-Off Voltage IR at VWM µA V max BZD27C7V5P 7 100 0 0.07 11.3 13.3 1500 BZD27C8V2P 7.7 100 0.03 0.08 12.3 12.2 1200 6.2 6.8 BZD27C9V1P 8.5 50 0.03 0.08 13.3 11.3 100 7.5 BZD27C10P 9.4 50 0.05 0.09 14.8 10.1 20 8.2 BZD27C11P 10.4 50 0.05 0.1 15.7 9.6 5 9.1 BZD27C12P 11.4 50 0.05 0.1 17 8.8 5 10 BZD27C13P 12.4 50 0.05 0.1 18.9 7.9 5 11 BZD27C15P 13.8 50 0.05 0.1 20.9 7.2 5 12 BZD27C16P 15.3 25 0.06 0.11 22.9 6.6 5 13 BZD27C18P 16.8 25 0.06 0.11 25.6 5.9 5 15 BZD27C20P 18.8 25 0.06 0.11 28.4 5.3 5 16 BZD27C22P 20.8 25 0.06 0.11 31 4.8 5 18 BZD27C24P 22.8 25 0.06 0.11 33.8 4.4 5 20 BZD27C27P 25.1 25 0.06 0.11 38.1 3.9 5 22 BZD27C30P 28 25 0.06 0.11 42.2 3.6 5 24 BZD27C33P 31 25 0.06 0.11 46.2 3.2 5 27 BZD27C36P 34 10 0.06 0.11 50.1 3 5 30 BZD27C39P 37 10 0.06 0.11 54.1 2.8 5 33 BZD27C43P 40 10 0.07 0.12 60.7 2.5 5 36 BZD27C47P 44 10 0.07 0.12 65.5 2.3 5 39 BZD27C51P 48 10 0.07 0.12 70.8 2.1 5 43 BZD27C56P 52 10 0.07 0.12 78.6 1.9 5 47 BZD27C62P 58 10 0.08 0.13 86.5 1.7 5 51 BZD27C68P 64 10 0.08 0.13 94.4 1.6 5 56 BZD27C75P 70 10 0.08 0.13 103.5 1.5 5 62 BZD27C82P 77 10 0.08 0.13 114 1.3 5 68 BZD27C91P 85 5 0.09 0.13 126 1.2 5 75 BZD27C100P 94 5 0.09 0.13 139 1.1 5 82 BZD27C110P 104 5 0.09 0.13 139 0.72 5 91 BZD27C120P 114 5 0.09 0.13 152 0.65 5 100 BZD27C130P 124 5 0.09 0.13 169 0.59 5 110 BZD27C150P 138 5 0.09 0.13 187 0.53 5 120 BZD27C160P 153 5 0.09 0.13 205 0.48 5 130 BZD27C180P 168 5 0.09 0.13 229 0.43 5 150 BZD27C200P 188 5 0.09 0.13 254 0.39 5 160 Non-repetitive peak reverse current in accordance with "IEC 60-1, Section 8" (10/1000 µs pulse); see Fig. 5. Document Number 85810 Rev. 1.8, 13-Apr-05 www.vishay.com 3 BZD27C3V6P to BZD27C200P Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) Typ. VF Max. VF 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 17411 140 120 100 80 60 40 20 0 0 25 17414 VF – Forward Voltage ( V ) Figure 1. Forward Current vs. Forward Voltage C D – Typ. Junction Capacitance ( pF ) 160 PRSM–Max. Pulse Power Dissipation ( W ) I F – Forward Current ( A ) 10.00 50 75 100 125 150 175 200 VZnom – Zener Voltage ( V ) Figure 4. Maximum Pulse Power Dissipation vs. Zener Voltage 10000 C5V1P C6V8P C12P IRSM (%) 100 90 C18P 1000 t1 = 10 µs t2 = 1000 µ s 50 100 C27P C51P 10 C200P 10 0.0 17412 0.5 1.0 1.5 2.0 2.5 VR – Reverse Voltage (V) 17415 Figure 2. Typ. Diode Capacitance vs. Reverse Voltage t t1 3.0 t2 Figure 5. Non-Repetitive Peak Reverse Current Pulse Definition Ptot –Power Dissipation ( W ) 3.0 tie point temperature 2.5 2.0 1.5 ambient temperature 1.0 0.5 0.0 0 17413 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) Figure 3. Power Dissipation vs. Ambient Temperature www.vishay.com 4 Document Number 85810 Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P Vishay Semiconductors Package Dimensions in mm (Inches) 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 5 0.16 (0.006) 0.99 (0.039) 0.97 (0.038) Z 5 Cathode Band Top View Detail Z enlarged 1.9 (0.074) 1.7 (0.066) 1.2 (0.047) 0.8 (0.031) 0.10 max 2.9 (0.113) 2.7 (0.105) ISO Method E Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) 1.4 (0.055) 17247 Document Number 85810 Rev. 1.8, 13-Apr-05 www.vishay.com 5 BZD27C3V6P to BZD27C200P Vishay Semiconductors Blistertape for SMF PS 18513 www.vishay.com 6 Document Number 85810 Rev. 1.8, 13-Apr-05 BZD27C3V6P to BZD27C200P Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85810 Rev. 1.8, 13-Apr-05 www.vishay.com 7