NTE NTE918 Integrated circuit high speed operational amplifier Datasheet

NTE918
NTE918M
NTE918SM
Integrated Circuit
High Speed Operational Amplifier
Description:
The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessary for operation. However, unlike most internally compensated amplifiers, external
frequency compensation may be added for optimum performance. For inverting applications, feedforward compensation will boost the slew rate to over 150V/µs and almost double the bandwidth.
Overcompensation can be used with the amplifier for greater stability when maximum bandwidth is
not needed. Further, a single capacitor can be added to reduce the 0.1% setting time to under 1µs.
The high speed and fast setting time of these OP amps make them useful in A/D converters, oscillators, active filters, sample and hold circuits, or general purpose amplifiers. These devices are easy
to apply and offer an order of magnitude better AC performance than industry standards such as the
NTE909 and NTE909D.
Features:
D 15MHz Small Signal Bandwidth
D Guaranteed 50V/µs Slew Rate
D Maximum Bias Current of 250nA
D Operates from Supplies of ±5V to ±20V
D Internal Frequency Compensation
D Input and Output Overload Protected
D Pin Compatible with General Purpose OP Amps
D Available in 3 Different Case Styles:
8–Lead Metal Can: NTE918
8–Lead Mini DIP: NTE918M
8–Lead SOIC (Surface Mount): NTE918SM
Absolute Maximum Ratings:
Power Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V
Power Dissipation (Note 1), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Differential Input Current (Note 2), IID . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10mA
Input Voltage (Note 3), VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V
Output Short–Circuit Duration, tS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Indefinite
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Lead Temperature (During Soldering, 10sec), TL
NTE918 (Metal Can) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
NTE918M (Plastic DIP) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260°C
NTE918SM (Surface Mount)
Vapor Phase (60sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +215°C
Infrared (15sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220°C
Note 1. The maximum junction temperature of these devices is +110°C. For operating at elevated
temperatures, the NTE918 must be derated based on a thermal resistance of +150°C/W,
junctio to ambient, or +45°C/W, junction to case. The thermal resistance of the NTE918M
and the NTE918SM is +100°C/W, junction to ambient.
Note 2. The inputs are shunted with back–to–back diodes for overvoltage protection. Therefore, excessive current will flow if a differential input voltage in excess of 1V is applied between the
inputs unless some limiting resistance is used.
Note 3. For supply voltages less than ±15V, the absolute maximum input voltage is equal to the supply
voltage.
Electrical Characteristics: (±5V ≤ VS ≤ ±20V, 0° ≤ TA ≤ +70°C, Note 4 unless otherwise specified)
Parameter
Input Offset Voltage
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
15
V
–
4
10
V
–
–
300
nA
–
30
200
nA
–
–
750
nA
TA = +25°C
–
150
500
nA
TA = +25°C
0.5
3.0
–
MΩ
–
5
10
mA
VS = ±15V, VOUT = ±10V, RL ≥ 2kΩ
20
–
–
V/mV
VS = ±15V, VOUT = ±10V, RL ≥ 2kΩ, TA = +25°C
25
200
–
V/mV
VIO
TA = +25°C
Input Offset Current
IIO
TA = +25°C
Input Bias Current
Input Resistance
Supply Current
Large Signal Voltage Gain
IIB
ri
ICC, IEE TA = +25°C
AV
Slew Rate
SR
VS = ±15V, AV = 1, TA = +25°C, Note 5
50
70
–
V/µs
Small Signal Bandwidth
BW
VS = ±15V, TA = +25°C
–
15
–
MHz
Output Voltage Swing
VO
VS = ±15V, RL = 2kΩ
±12
±13
–
V
Input Voltage Range
VI
VS = ±15V
±11.5
–
–
V
Common–Mode Rejection Ratio
CMRR
100
–
–
dB
Supply Voltage Rejection Ratio
PSRR
65
80
–
dB
Note 4. Power supplies must be bypassed with 0.1µF disc capacitors.
Note 5. Slew rate is tested with VS = ±15V. These devices are in a unity–gain non–inverting configuration.
VIN is stepped from –7.5V to +7.5V and vice versa. The slew rates between –5V and +5V and
vice versa are tested and guaranteed to exceed 50V/µs.
Pin Connection Diagram
NTE918
(Top View)
NTE918M
NTE918SM
Balance/Comp 3
Output
V(+)
Comp 2
5
6
4
V(–)
3 Non–Invert
Input
7
2
8
Balance/Comp 1
1
8
Comp 2
Invert Input
2
7
V (+)
Non–Invert Input
3
6
Output
V (–)
4
5
Balance/Comp 3
Invert Input
1
Balance/Comp 1
NTE918
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.177 (4.5)
Max
.492
(12.5)
Min
.018 (0.45) Dia Typ
3
2
4
1
5
8
45°
7
6
.032 (0.82)
.200 (5.06)
Dia
NTE918M
8
5
.256 (6.52) Max
1
4
.393 (10.0)
Max
.300 (7.62)
.150
(3.81)
.100 (2.54)
.070 (1.77) Min
.300 (7.62)
NTE918SM
.192 (4.9)
8
1
5
4
.050 (1.27)
.236
(5.99)
.154
(3.91)
016
(.406)
061
(1.53)
.006 (.152)
NOTE: Pin1 on Beveled Edge
.198 (5.03)
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