AWT6223R WCDMA/GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control Data Sheet - Rev 2.0 features InGaP HBT Technology Optimized for a 50 System Internal Reference Voltage Integrated GSM/EDGE Power Control with Temperature Compensation • Low Profile Surface Mount Package: 6 mm x 8 mm x 1 mm • RoHS Compliant Package, 250 oC MSL-3 WCDMA MODE • HSDPA Compliant • High Efficiency: 41% @ POUT = +28.5 dBm 21% @ POUT = +16 dBm • Low Quiescent Current: 12 mA • Low Leakage Current in Shutdown Mode: <1 A • Internal Voltage Regulator Eliminates the Need for External Reference Voltage • VEN = +2.4 V (+2.2 V min over Temp) GMSK MODE • +35 dBm GSM850/900 Output Power • +33 dBm DCS/PCS Output Power • 55 % GSM850/900 PAE • 50 % DCS/PCS PAE • Power Control Range > 50 dB • EGPRS Capable (class 12) EDGE MODE • +29 dBm GSM850/900 Output Power • +28.5 dBm DCS/PCS Output Power • 27 % GSM850/900 PAE • 30 % DCS/PCS PAE • -63 dBc/30 kHz Typical ACPR (400 kHz) • -77 dBc/30 kHz Typical ACPR (600 kHz) • • • • InGaP HBT MMIC technology to provide reliability, temperature stability, and ruggedness. This pentaband module consists of three amplifier chains; one to support GSM/GPRS/EGPRS in cellular bands, one to support GSM/GPRS/EGPRS in DCS/PCS bands, and one to support WCDMA in the IMT band. In addition, the AWT6223R module includes an internal reference voltage and integrated power control with temperature compensation for use in GMSK and 8-PSK modes of operation. These features facilitate fast and easy production calibration, minimize performance variation over temperature, and reduce the number of external components required. TM The WCDMA PA incorporates ANADIGICS’ HELP2 technology. Through selectable bias modes, the AWT6223R achieves optimal efficiency across different output power levels, specifically at low and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for an external reference voltage and switch components, reducing PCB area and BOM costs. All of the RF ports for this device are internally matched to 50 . The RF inputs GSM_IN and DCS/ PCS_IN both have shunt resistors to ground to maintain a good input VSWR as the VRAMP power control voltage is varied. Internal DC blocks are provided at the RF outputs. APPLICATIONS 3G Handsets, Smartphones, Data Devices Incorporating: • WCDMA (IMT) • GSM850/GSM900/DCS/PCS Bands • GMSK and 8-PSK (Open Loop Polar) Modulations • CEXT2 WCDMA_IN 1 VMODE 2 VEN 3 DCS/PCS_IN The AWT6223R WEDGE module supports dual, tri, or quad band operation using GMSK/GPRS and 8-PSK (open loop polar) modulations, and WCDMA operation in the IMT band. The AWT6223R module is manufactured using ANADIGICS’ advanced 11/2008 21 VCC_WCDMA 20 WCDMA_OUT 19 GND 4 18 DCS/PCS_OUT BS 5 17 GND TX_EN 6 16 GND VBATT 7 CEXT1 PRODUCT DESCRIPTION 22 VRAMP GSM850/900_IN Voltage Regulator and Bias Control CMOS Bias/Power Controller 8 9 10 11 15 CEXT3 14 GND 13 GND 12 GSM850/900_OUT VCC_GSM Figure 1: Block Diagram AWT6223R CEXT2 21 VCC_WCDMA 2 20 WCDMA_OUT VEN 3 19 GND DCS/PCS_IN 4 18 DCS/PCS_OUT BS 5 17 GND TX_EN 6 16 GND VBATT 7 15 CEXT3 CEXT1 8 14 GND VRAMP 9 13 GND GSM850/900_IN 10 12 GSM850/900_OUT WCDMA_IN 1 VMODE 22 GND 11 VCC_GSM Figure 2: Pinout (X - ray Top View) Table 1: Pin Description PIN NaMe 1 WCDMA_IN 2 VMODE 3 PIN NaMe DesCrIPtION WCDMA RF Input 12 WCDMA Mode Control Voltage 13 GND Ground VEN WCDMA Shutdown 14 GND Ground 4 DCS/PCS_IN DCS/PCS RF Input 15 C EXT3 Bypass for Power Control Regulator 5 BS Band Select Logic Input 16 GND Ground 6 TX_EN TX Enable Logic Input 17 GND Ground 7 VBATT Battery Supply 18 DCS/PCS_OUT 8 CEXT1 Bypass for Internal Voltage Regulator 19 GND 9 VRAMP Analog signal used to control the GSM output power 20 WCDMA_OUT GSM850/900_IN GSM850/900 RF Input 21 VCC_WCDMA WCDMA Supply Voltage 22 C EXT2 Bypass for WCDMA VCC1 10 11 2 DesCrIPtION VCC_GSM VCC test point for GSM secton. Do not connect. Do not ground. GSM850/900_OUT GSM850/900 RF Output Data Sheet - Rev 2.0 11/2008 DCS/PCS RF Output Ground WCDMA RF Output AWT6223R ELECTRICAL CHARACTERISTICS Table 2: Absolute Maximum Ratings ParaMeter MIN MaX Supply Voltage (VBATT) - +6 V Supply Voltage (VCC_WCDMA) - +5 V RF Input Power (RFIN) - 10 dBm -0.3 1.8 V 0 3.5 V -55 150 °C GSM/EDGE Output Control Voltage (VRAMP) WCDMA Control Voltages (VMODE, VEN) Storage Temperature (TSTG) uNIts Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. CEXT2 >+2500 V <-2500 V WCDMA_IN >+1500 V <-1500 V VMODE >+1500 V <-1500 V 22 1 VEN >+1500 V <-1500 V DCS/PCS_IN >+2500 V <-2500 V BS >+2500 V <-2500 V TX_EN >+2500 V <-2500 V VBATT >+2500 V <-2500 V CEXT1 >+2500 V <-2500 V 21 VCC_WCDMA >+1300 V <-1300 V WCDMA_OUT >+1500 V <-1500 V 2 20 3 19 GND 18 DCS/PCS_OUT >+2500 V <-2500 V 17 GND 6 16 GND 7 15 CEXT3 >+2500 V <-2500 V 4 5 GND 8 14 GND VRAMP >+2500 V <-2500 V 9 13 GND GSM850/900_IN >+2500 V <-2500 V 10 12 GSM850/900_OUT >+2500 V <-2500 V 11 VCC_GSM >+2500 V <-2500 V Figure 3: ESD Pin Rating Electrostatic Discharge Sensitivity The AWT6223R part was tested to determine the ESD sensitivity of each package pin with respect to Ground. Non-ground pins are stressed with 1 positive pulse or 1 negative pulse with respect to the Ground using the Human Body Model apparatus and waveform outlined in JESD22-A114C.01. Determination of pass or fail is made according to whether the part passes key RF tests against the datasheet limits after stress. Results of the test are presented in Figure 3: Rating for WCDMA_IN, VMODE, VEN, and WCDMA_OUT is +1500V and -1500V; • Rating for VCC_WCDMA is +1300V and -1300V; • Rating for DCS/PCS_IN, BS, Tx_EN, VBATT, CEXT1, VRAMP, GSM_IN, VCC_GSM, GSM_OUT, CEXT3 and DCS/PCS_OUT is +2500V and -2500V It is very important to take all necessary precautions, listed in Application Notes “ESD precautions for ANADIGICS GaAs MMIC,” to avoid ESD damage to • Data Sheet - Rev 2.0 11/2008 3 AWT6223R Table 3: GSM/EDGE Operating Conditions ParaMeter MIN tYP MaX uNIts Case temperature (TC) -20 - 85 °C Supply voltage (VBATT) 3.0 3.5 4.8 V - 1 10 A 0.2 - 1.6 V Turn On Time (TON) - - 1 s Turn Off Time (TOFF) - - 1 s Rise Time (TRISE) - - 1 s Fall Time (TFALL) - - 1 s VRAMP Input Capacitance - 3 - pF VRAMP Input Current - - 10 Duty Cycle - - 50 Total Power Supply Leakage Current Control Voltage Range COMMeNts VBATT = VCC_WCDMA = 4.8 V, VEN = 0 V, VMODE = 0 V, BS = 0 V, VRAMP = 0 V, TX_EN = LOW, No RF applied VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm VRAMP = 0.2 V, TX_EN = LOW Y HIGH PIN = 5 dBm POUT = -10 dBm Y PMAX (within 0.2 dB) POUT = PMAX Y -10 dBm (within 0.2 dB) A % The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: 1. Do not apply a DC voltage to the GSM_IN or DCS/PCS_IN RF inputs. Table 4: GSM/EDGE Digital Inputs ParaMeter sYMBOL MIN tYP MaX uNIts Logic High Voltage VIH 1.2 - 3.0 V Logic Low Voltage VIL - - 0.5 V Logic High Current |IIH| - - 30 A Logic Low Current |IIL| - - 30 A Table 5: GSM/EDGE Logic Control OPeratIONaL MODe Bs tX_eN GSM850/900 LOW HIGH DCS/PCS HIGH HIGH - LOW PA DISABLED Notes: 1. VBATT must be applied before taking BS and/or TX_EN High. 4 Data Sheet - Rev 2.0 11/2008 AWT6223R Table 6: Electrical Characteristics for GSM850 GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt Operating Frequency (Fo) 824 - 849 MHz 0 3 5 dBm Output Power, PMAX 34.5 35 - dBm Freq = 824 to 849 MHz Degraded Output Power 32.0 32.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 48 52 - % Forward Isolation 1 - -42 -30 dBm TX_EN = LOW, PIN = 5 dBm Forward Isolation 2 - -25 -20 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm Cross Isolation 2Fo @ DCS/PCS port 3Fo @ DCS/PCS port - -36 -25 -20 -20 dBm VRAMP =0.2V to VRAMP_MAX Second Harmonic - -20 -10 dBm Over all output power levels Third Harmonic - -30 -10 dBm Over all output power levels n x Fo (n > 4), Fo 12.75 GHz - -30 -10 dBm Over all output power levels Input Power PAE @ PMAX COMMeNts Freq = 824 to 849 MHz VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation, VSWR 10:1, All Phase Angles RX Noise Power - -86 -83 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.0 11/2008 POUT < 34.5 dBm FTX = 849 MHz, RBW = 100 kHz FRX = 869 to 894 MHz, POUT < 34.5 dBm Over all output power levels 5 AWT6223R Table 7: Electrical Characteristics for GSM900 GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = LOW, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt 880 - 915 MHz 0 3 5 dBm Output Power, PMAX 34.5 35 - dBm Freq = 880 to 915 MHz Degraded Output Power 32.0 32.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 50 55 - % Forward Isolation 1 - -40 -30 dBm TX_EN = LOW, PIN = 5 dBm Forward Isolation 2 - -25 -20 dBm TX_EN = HIGH,VRAMP = 0.2V, PIN = 5 dBm Cross Isolation 2Fo @ DCS/PCS port 3Fo @ DCS/PCS port - -34 -22 -20 -17 dBm VRAMP =0.2V to VRAMP_MAX Second Harmonic - -25 -10 dBm Over all output power levels Third Harmonic - -27 -10 dBm Over all output power levels n x Fo (n > 4), Fo 12.75 GHz - -30 -10 dBm Over all output power levels Operating Frequency ( Fo ) Input Power PAE @ PMAX COMMeNts Freq = 880 to 915 MHz VSWR = 8:1 All Phases , POUT < 34.5 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation, VSWR 10:1, All Phase Angles - -83 -77 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 925 to 935 MHz, POUT < 34.5 dBm - -86 -83 dBm FTX = 915 MHz, RBW = 100 kHz FRX = 935 to 960 MHz, POUT < 34.5 dBm - 1.5:1 2.5:1 VSWR RX Noise Power Input Return Loss 6 POUT < 34.5 dBm Data Sheet - Rev 2.0 11/2008 Over all output power levels AWT6223R Table 8: Electrical Characteristics for GSM850 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25% ZIN = ZOUT = 50 Ω, TC = 25 °C, BS = LOW, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt 824 880 - 849 915 MHz Input Power 0 3 5 dBm PAE 20 27 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -39 -63 -74 -77 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +29 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +29 dBm Operating Frequency ( FIN ) Data Sheet - Rev 2.0 11/2008 COMMeNts FIN = 824 to 849 MHz POUT set = +29 dBm 7 AWT6223R Table 9: Electrical Characteristics for DCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt Operating Frequency 1710 - 1785 MHz Input Power 0 3.0 5 dBm Output Power, PMAX 32 33 - dBm 29.5 30.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 45 50 - % Freq = 1710 to 1910 MHz Forward Isolation 1 - -40 -33 dBm TX_EN = LOW, PIN = 5dBm Forward Isolation 2 - -24 -20 dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Second Harmonic - -18 -10 dBm Over all output power levels Third Harmonic - -24 -10 dBm Over all output power levels n x Fo (n > 4), Fo 12.75 GHz - -30 -10 dBm Over all output power levels Degraded Output Power PAE @ PMAX COMMeNts VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation, VSWR 10:1, All Phase Angles RX Noise Power - -86 -80 dBm Input Return Loss - 1.5:1 2.5:1 VSWR 8 Data Sheet - Rev 2.0 11/2008 POUT < 32 dBm FTX = 1785 MHz, RBW = 100 kHz, FRX =1805 to 1880 MHz, POUT < 32 dBm Over all output power levels AWT6223R Table 10: Electrical Characteristics for PCS GMSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C, VRAMP = 1.6 V, BS = HIGH, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt Operating Frequency 1850 - 1910 MHz Input Power 0 3.0 5 dBm Output Power, PMAX 32 33 - dBm 29.5 30.5 - dBm VBATT = 3.0 V, TC = 85 °C PIN = 0 dBm 45 50 - % Freq = 1710 to 1910 MHz Forward Isolation 1 - -37 -33 dBm TX_EN = LOW, PIN = 5dBm Forward Isolation 2 - -22 -18 dBm TX_EN =HIGH, VRAMP = 0.2 V, PIN = 5 dBm Second Harmonic - -28 -10 dBm Over all output power levels Third Harmonic - -24 -10 dBm Over all output power levels n x Fo (n > 4), Fo 12.75 GHz - -30 -10 dBm Over all output power levels Degraded Output Power PAE @ PMAX COMMeNts VSWR = 8:1 All Phases , POUT < 32 dBm Stability Ruggedness - - -36 dBm FOUT < 1 GHz - - -30 dBm FOUT > 1 GHz No Permanent Degradation, VSWR 10:1, All Phase Angles RX Noise Power - -86 -80 dBm Input Return Loss - 1.5:1 2.5:1 VSWR Data Sheet - Rev 2.0 11/2008 POUT < 32 dBm FTX = 1910 MHz, RBW = 100 kHz, FRX =1930 to 1990 MHz, POUT < 32 dBm Over all output power levels 9 AWT6223R Table 11: Electrical Characteristics for DCS 8PSK Mode (Unless Otherwise Specified: VBATT = 3.5 V, PIN = 3.0 dBm, Pulse Width =1154 µs, Duty = 25%, ZIN = ZOUT = 50 Ω, TC = 25 °C , BS =HIGH, TX_EN = HIGH, VEN = LOW) ParaMeter MIN tYP MaX uNIt 1710 1850 - 1785 1910 MHz Input Power 0 3 5 dBm PAE 25 30 - % ACPR 200 kHz 400 kHz 600 kHz 1800 kHz - -38 -64 -77 -77 -34 -58 -64 -68 dBc/30 kHz dBc/30 kHz dBc/30 kHz dBc/100 kHz All conditions under Polar operation POUT = +28.5 dBm EVM - 1 5 % All Conditions under Polar operation POUT = +28.5 dBm Operating Frequency 10 ( FIN ) Data Sheet - Rev 2.0 11/2008 COMMeNts FIN = 1710 to 1785 MHz POUT set = +28.5 dBm AWT6223R Table 12: WCDMA Operating Conditions ParaMeter MIN tYP Case temperature (TC) -20 - 85 °C Supply Voltage (VCC) +3.2 +3.4 +4.2 V POUT < +28.5 dBm WCDMA Enable Voltage (VEN) +2.2 0 +2.4 - +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE) +2.2 0 +2.4 - +3.1 +0.5 V Low Bias Mode High Bias Mode +28.0 (1) +27.0 (1) +26.0 (1) +25.5 (1) +28.5 +27.5 +26.5 +26.0 - dBm RF Output Power (POUT) 3GPP HSDPA Case A HSDPA Case B HSDPA Case C MaX uNIts COMMeNts 1/15 < c/d < 12/15 13/15 < c/d < 15/8 15/7 < c/d < 15/0 The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) WCDMA operation at VCC = +3.2 V, Pout is derated by 0.5 dB. (2) Do not apply a DC voltage to the WCDMA_IN RF input. Table 13: WCDMA Bias Control POut LeveLs LOGIC veN vMODe WCDMA - low power <+16 dBm Low +2.4 V +2.4 V WCDMA - high power >+16 dBm High +2.4 V 0V - Shutdown 0V 0V aPPLICatION Shutdown Notes: 1. For WCDMA operation set TX_EN = LOW. Data Sheet - Rev 2.0 11/2008 11 AWT6223R Table 14: Electrical Characteristics for WCDMA (Unless Otherwise Specified: TC = 25 °C, VBATT = +3.4 V, TX_EN = LOW, 50 Ω system, VEN = 2.4 V) ParaMeter MIN tYP MaX uNIt Operating Frequency 1920 - 1980 MHz Gain 24.5 13.0 26.5 15.0 28.5 17.0 dB ACLR1 at 5 MHz offset (1) - -40 -43 -38 -38 dBc POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V ACLR2 at 10 MHz offset - -56 -52 -48 -48 dBc POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V 37 18 41 21 - % POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V Quiescent Current (Icq) - 12 20 mA VMODE = +2.4 V Enable Current - 0.2 1 mA through VEN pin Battery Current - 3 5 mA through VBATT pin, VMODE = +2.4 V Mode Control Current - 0.3 1 mA through VMODE pin, VMODE = +2.4 V Noise in Receive Band - -138 -135 Harmonics 2fo 3fo, 4fo - -43 -50 -35 -35 dBc Input Impedance - - 2:1 VSWR Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure POUT = +28.5 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V dBm/Hz 2110 MHz to 2170 MHz - - -70 dBc 10:1 - - VSWR Notes: (1) ACLR and Efficiency measured at 1950 MHz. 12 COMMeNts Data Sheet - Rev 2.0 11/2008 POUT < +28.5 dBm POUT < +28.5 dBm In-band load VSWR < 5:1 Out-of-band load VSWR < 10:1 Applies over all operating conditions Applies over full operating range AWT6223R APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Shutdown Mode The WCDMA power amplifier may be placed in a shutdown mode by applying logic low levels (see Operating Ranges table) to both the VEN and VMODE voltages. Two operating modes are recommended to optimize current consumption. High Bias operating mode is for POUT levels > 16 dBm. At or below +16 dBm, the PA should be “Mode Switched” to Low Bias Mode. Bias Modes The WCDMA power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the BATTERY VOLTAGE 4.7uF ++ 10nF++ 22pF** SUPPLY VOLTAGE FROM DC-DC CONVERTER*** 22 VBATT 1 IMT RF INPUT 2 WCDMA BIAS MODE 27pF WCDMA ENABLE ++ 3 27pF ++ DCS/PCS RF INPUT 5 BAND SELECT 27pF ++ TX ENABLE BATTERY VOLTAGE 27pF ++ 4.7uF ++ 2.7pF ** 22nF DAC OUTPUT GSM850/900 RF INPUT 4 10K * 6 7 8 ** 27pF* 9 10 WCDMA_IN V CC_WCDMA WCDMA_OUT VMODE VEN GND DCS/PCS_PIN BS TX_EN DCS/PCS_OUT aWt6223r VBATT GND GND VCC_OUT CEXT GND VRA MP GND GSM850/900_IN GSM850/900_OUT 21 20 19 18 10nF ++ 22pF** WCDMA RF OUTPUT DCS/PCS RF OUTPUT 17 16 15 14 1nF** 13 12 GSM850/900 RF OUTPUT VCC2_GSM 11 * Filtering may be required to filter noise from baseband. ** This component should be placed as close to the device pin as possible. *** If the final design uses a DC-DC Converter, otherwise connect Pin 21 directly to V BATT Pin 22. ++ These components are recommended as good design practice for improving noise rejection characteristics. The values specified are not critical as they may not be required in the final application. Figure 4: Application Circuit Data Sheet - Rev 2.0 11/2008 13 AWT6223R PACKAGE OUTLINE Figure 5: Package Outline - 22 Pin 6 mm x 8 mm x 1 mm Surface Mount Package Figure 6: Branding Specification 14 Data Sheet - Rev 2.0 11/2008 AWT6223R COMPONENT PACKAGING 8.00±.10 [.314±.004] 4.00±.10 [.157±.004] Ø1.50±.10 [Ø.059±.004] 2.00±.10 [.079±.004] 1.75±.10 [.069±.004] 6°MAX 7.50±.10 [.295±.004] 16.00+.30/-.10 [.630+.012/-.004] 8.36±.10 [.329±.004] PIN#1 ORIENTATION t Ø1.50±.25 [Ø.059±.010] Ao 6.35±.10 [.250±.004] 1.78±.10 [.070±.004] Bo Ko .305±.02 [.0120±.0007] 8°MAX NOTES: 1. MATERIAL: 3000 (CARBON FILLED POLYCARBONATE) 100% RECYCLABLE. Figure 7: Tape & Reel Packaging Table 14: Tape & Reel Dimensions PaCKaGe tYPe taPe WIDtH POCKet PItCH reeL CaPaCItY MaX reeL DIa 6 mm x 8 mm x 1 mm 16 mm 8 mm 2500 13" Data Sheet - Rev 2.0 11/2008 15 AWT6223R ORDERING INFORMATION OrDer NuMBer teMPerature raNGe PaCKaGe DesCrIPtION AWT6223RM26P8 -20 oC to +85 oC RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, 2500 pieces per Reel Surface Mount Module AWT6223RM26P9 -20 oC to +85 oC RoHS Compliant 24 Pin 6 mm x 8 mm x 1 mm Tape and Reel, Partial Reel Surface Mount Module COMPONeNt PaCKaGING ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. warning ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 16 Data Sheet - Rev 2.0 11/2008