NCV8535 Ultra High Accuracy, Low Iq, 500 mA Low Dropout Regulator with Enable The NCV8535 is a high performance, low dropout regulator. With accuracy of ±0.9% over line and load and ultra−low quiescent current and noise it encompasses all of the necessary features required by today’s consumer electronics. This unique device is guaranteed to be stable without a minimum load current requirement and stable with any type of capacitor as small as 1.0 mF. The NCV8535 also comes equipped with sense and noise reduction pins to increase the overall utility of the device. The NCV8535 offers reverse bias protection. www.onsemi.com DFN10 MN SUFFIX CASE 485C Features • • • • • • • • • • • • • • High Accuracy Over Line and Load (±0.9% at 25°C) Ultra−Low Dropout Voltage at Full Load (260 mV typ.) No Minimum Output Current Required for Stability Low Noise (31 mVrms w/10 nF Cnr and 51 mVrms w/out Cnr) Low Shutdown Current (0.07 mA) Reverse Bias Protected 2.9 V to 12 V Supply Range Thermal Shutdown Protection Current Limitation Requires Only 1.0 mF Output Capacitance for Stability Stable with Any Type of Capacitor (including MLCC) Available in 1.5 V, 1.8 V, 1.9 V, 2.5 V, 2.8 V, 2.85 V, 3.0 V, 3.3 V, 3.5 V, 5.0 V and Adjustable Output Voltages NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These are Pb−Free Devices Applications • • • • • • • • PCMCIA Card Cellular Phones Camcoders and Cameras Networking Systems, DSL/Cable Modems Cable Set−Top Box MP3/CD Players DSP Supply Displays and Monitors PIN CONFIGURATION Fixed Version Pin 1, 2. Vout 3. Sense 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin Adj Version Pin 1, 2. Vout 3. Adj 4. GND 5, 6. NC 7. NR 8. SD 9, 10. Vin MARKING DIAGRAM 1 V8535 xxx ALYWG G V8535= Specific Device Code xxx = ADJ, 150, 180, 190, 250, 280, 285, 300, 330, 350, 500 A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 21 of this data sheet. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2013 October, 2017 − Rev. 5 1 Publication Order Number: NCV8535/D NCV8535 Cnr 10 nF (Optional) 7 NR SENSE 9 IN OUT IN OUT 2 10 Vin Vout 1 + Cin 1.0 mF 3 Cout 1.0 mF GND SD 8 + 4 ON OFF Figure 1. Typical Fixed Version Application Schematic Cnr 10 nF (Optional) 7 NR OUT 9 OUT IN 10 Vin ADJ IN 2 1 3 R1 + Cin 1.0 mF SD 8 CADJ 68 pF Vout Cout 1.0 mF R2 GND 4 ON OFF Figure 2. Typical Adjustable Version Application Schematic www.onsemi.com 2 + NCV8535 Figure 3. Block Diagram, Fixed Output Version Figure 4. Block Diagram, Adjustable Output Version www.onsemi.com 3 NCV8535 PIN FUNCTION DESCRIPTION Pin No. Pin Name Description FIXED VERSION Regulated output voltage. Bypass to ground with Cout w 1.0 mF. 1, 2 Vout 3 SENSE 4 GND 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. For output voltage sensing, connect to Pins 1 and 2. Power Supply Ground 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage 5, 6 NC Not Connected EPAD EPAD Exposed thermal pad should be connected to ground. ADJUSTABLE VERSION Vout Regulated output voltage. Bypass to ground with Cout w 1.0 mF. 3 Adj Adjustable pin; reference voltage = 1.25 V. 4 GND 7 NR Noise Reduction Pin. This is an optional pin used to further reduce noise. 8 SD Shutdown pin. When not in use, this pin should be connected to the input pin. 9, 10 Vin Power Supply Input Voltage 5, 6 NC Not Connected EPAD EPAD 1, 2 Power Supply Ground Exposed thermal pad should be connected to ground. MAXIMUM RATINGS Rating Symbol Value Unit Input Voltage Vin −0.3 to +16 V Output Voltage Vout −0.3 to Vin +0.3 or 10 V* V Shutdown Pin Voltage Vsh −0.3 to +16 V Junction Temperature Range TJ −40 to +150 °C Storage Temperature Range Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: This device series contains ESD protection and exceeds the following tests: Human Body Model (HBM) tested per AEC−Q100−002 (EIA/JESD22−A114) Machine Model (MM) tested per AEC−Q100−003 (EIA/JESD22−A115) Charged Device Model (CDM) tested per EIA/JESD22−C101 *Which ever is less. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. THERMAL CHARACTERISTICS Test Conditions (Typical Value) Min Pad Board (Note 1) 1, Pad Board (Note 1) Unit Junction−to−Air, qJA 215 66 °C/W Junction−to−Pin, yJL2 55 17 °C/W Characteristic 1. As mounted on a 35 x 35 x 1.5 mm FR4 Substrate, with a single layer of a specified copper area of 2 oz (0.07 mm thick) copper traces and heat spreading area. JEDEC 51 specifications for a low and high conductivity test board recommend a 2 oz copper thickness. Test conditions are under natural convection or zero air flow. www.onsemi.com 4 NCV8535 ELECTRICAL CHARACTERISTICS – 5.0 V (Vout = 5.0 V typical, Vin = 5.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 2.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 4.955 5.0 +0.9% 5.045 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 4.930 5.0 +1.4% 5.070 V Output Voltage (Accuracy) Vin = 5.4 V to 9.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 4.925 5.0 +1.5% 5.075 V Line Regulation Vin = 5.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 5.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc mV 340 230 110 10 Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 3) Iload = 300 mA (Note 3) Iload = 50 mA Iload = 0.1 mA 700 830 mA 930 mA °C 160 IGND In Dropout Vin = 4.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 93 58 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 5.0 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 2. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 3. TA must be greater than 0°C. www.onsemi.com 5 NCV8535 ELECTRICAL CHARACTERISTICS – 3.5 V (Vout = 3.5 V typical, Vin = 3.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 4.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 3.469 3.5 +0.9% 3.532 V Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 3.451 3.5 +1.4% 3.549 V Output Voltage (Accuracy) Vin = 3.9 V to 7.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 3.448 3.5 +1.5% 3.553 V Line Regulation Vin = 3.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc mV 340 230 110 10 Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 5) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND In Dropout Vin = 3.4 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 68 47 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.5 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 4. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. TA must be greater than 0°C. www.onsemi.com 6 NCV8535 ELECTRICAL CHARACTERISTICS – 3.3 V (Vout = 3.3 V typical, Vin = 3.7 V, TA = −40°C to +85°C, unless otherwise noted, Note 6.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 3.270 3.3 +0.9% 3.330 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 3.254 3.3 +1.4% 3.346 V Output Voltage (Accuracy) Vin = 3.7 V to 7.3 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 3.250 3.3 +1.5% 3.350 V Line Regulation Vin = 3.7 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.7 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc mV 340 230 110 10 Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 7) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND In Dropout Vin = 3.2 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 69 46 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.3 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 6. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 7. TA must be greater than 0°C. www.onsemi.com 7 NCV8535 ELECTRICAL CHARACTERISTICS – 3.0 V (Vout = 3.0 V typical, Vin = 3.4 V, TA = −40°C to +85°C, unless otherwise noted, Note 8.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.973 3.0 +0.9% 3.027 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.958 3.0 +1.4% 3.042 V Output Voltage (Accuracy) Vin = 3.4 V to 7.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.955 3.0 +1.5% 3.045 V Line Regulation Vin = 3.4 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.4 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc mV 340 230 110 10 Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 9) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND mA In Dropout Vin = 2.9 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 56 37 Shutdown Threshold Voltage ON Threshold Voltage OFF 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 3.0 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 8. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 9. TA must be greater than 0°C. www.onsemi.com 8 NCV8535 ELECTRICAL CHARACTERISTICS − 2.85 V (Vout = 2.85 V typical, Vin = 3.25 V, TA = −40°C to +85°C, unless otherwise noted, Note 10) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.824 2.85 +0.9% 2.876 V Output Voltage (Accuracy) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.810 2.85 +1.4% 2.890 V Output Voltage (Accuracy) (Note 11) Vin = 3.25 V to 6.85 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.807 2.85 +1.5% 2.893 V Line Regulation Vin = 3.25 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.25 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO mV 340 230 110 10 Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 12) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND In Dropout Vin = 2.75 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 61 40 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.85 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 10. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 11. For output current capability for TA < 0°C, please refer to Figure 18. 12. TA must be greater than 0°C. www.onsemi.com 9 NCV8535 ELECTRICAL CHARACTERISTICS − 2.8 V (Vout = 2.8 V typical, Vin = 3.2 V, TA = −40°C to +85°C, unless otherwise noted, Note 13.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.774 2.8 +0.9% 2.826 V Output Voltage (Accuracy) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.760 2.8 +1.4% 2.840 V Output Voltage (Accuracy) (Note 14) Vin = 3.2 V to 6.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.758 2.8 +1.5% 2.842 V Line Regulation Vin = 3.2 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 3.2 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA Iload = 300 mA Iload = 50 mA Iload = 0.1mA VDO mV 340 230 110 10 Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 15) Iload = 300 mA (Note 15) Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND In Dropout Vin = 2.7 V, Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 52 36 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.8 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 13. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. For output current capability for TA < 0°C, please refer to Figure 19. 15. TA must be greater than 0°C. www.onsemi.com 10 NCV8535 ELECTRICAL CHARACTERISTICS − 2.5 V (Vout = 2.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 16.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 2.477 2.5 +0.9% 2.523 V Output Voltage (Accuracy) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 2.465 2.5 +1.4% 2.535 V Output Voltage (Accuracy), (Note 17) Vin = 2.9 V to 6.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 2.462 2.5 +1.5% 2.538 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1mA VDO mV 340 230 110 10 Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown 500 TJ Ground Current In Regulation Iload = 500 mA (Note 18) Iload = 300 mA (Note 18) Iload = 50 mA Iload = 0.1 mA 700 800 mA 900 mA °C 160 IGND 9.0 4.6 0.8 − In Dropout Vin = 2.4 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 14 7.5 2.5 190 mA 500 mA 1.0 mA Vnoise mVrms mVrms 56 35 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 2.5 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 16. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 17. For output current capability for TA < 0°C, please refer to Figure 20. 18. TA must be greater than 0°C. www.onsemi.com 11 NCV8535 ELECTRICAL CHARACTERISTICS − 1.9 V (Vout = 1.9 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 19.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.883 1.9 +0.9% 1.917 V Output Voltage (Accuracy) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.873 1.9 +1.4% 1.927 V Output Voltage (Accuracy), (Note 20) Vin = 2.9 V to 5.9 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.872 1.9 +1.5% 1.929 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 21, 22) Iload = 300 mA (Notes 21, 22) Iload = 50 mA (Notes 21, 22) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 21) Iload = 300 mA (Note 21) Iload = 50 mA Iload = 0.1 mA mV 500 367 156 90 1030 1030 1030 700 800 mA 900 mA °C 160 IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 14 7.5 2.5 190 mA 500 mA 1.0 mA Vnoise mVrms mVrms 53 33 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.9 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 19. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 20. For output current capability for TA < 0°C, please refer to Figure 21. 21. TA must be greater than 0°C. 22. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. www.onsemi.com 12 NCV8535 ELECTRICAL CHARACTERISTICS − 1.8 V (Vout = 1.8 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 23.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.783 1.8 +0.9% 1.817 V Output Voltage (Accuracy) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.774 1.8 +1.4% 1.826 V Output Voltage (Accuracy), (Note 24) Vin = 2.9 V to 5.8 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.773 1.8 +1.5% 1.827 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 25, 26) Iload = 300 mA (Notes 25, 26) Iload = 50 mA (Notes 25, 26) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 25) Iload = 300 mA (Note 25) Iload = 50 mA Iload = 0.1 mA mV 500 620 230 95 1130 1130 1130 700 830 mA 900 mA °C 160 IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 14 7.5 2.5 190 mA 500 mA 1.0 mA Vnoise mVrms mVrms 52 33 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.8 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 23. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 24. For output current capability for TA < 0°C, please refer to Figure 21. 25. TA must be greater than 0°C. 26. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. www.onsemi.com 13 NCV8535 ELECTRICAL CHARACTERISTICS − 1.5 V (Vout = 1.5 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 27.) Characteristic Symbol Min Typ Max Unit Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vout −0.9% 1.486 1.5 +0.9% 1.514 V Output Voltage (Accuracy) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vout −1.4% 1.479 1.5 +1.4% 1.521 V Output Voltage (Accuracy), (Note 28) Vin = 2.9 V to 5.5 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vout −1.5% 1.477 1.5 +1.5% 1.523 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note) Iload = 500 mA (Notes 29, 30) Iload = 300 mA (Notes 29, 30) Iload = 50 mA (Notes 29, 30) VDO Peak Output Current (See Figure 16) Ipk Short Output Current (See Figure 16) Isc Thermal Shutdown TJ Ground Current In Regulation Iload = 500 mA (Note 29) Iload = 300 mA (Note 29) Iload = 50 mA Iload = 0.1 mA mV 500 940 500 350 1430 1430 1430 700 860 mA 900 mA °C 160 IGND 9.0 4.6 0.8 − In Dropout Vin = 2.2 V, Iload = 0.1 mA In Shutdown SD = 0 V 0.07 IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 14 7.5 2.5 190 mA 500 mA 1.0 mA Vnoise mVrms mVrms 51 31 Shutdown Threshold Voltage ON Threshold Voltage OFF mA 2.0 0.4 V V ISD 0.07 1.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = 1.5 V) IOUTR 10 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 27. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 28. For output current capability for TA < 0°C, please refer to Figure 22. 29. TA must be greater than 0°C. 30. Maximum dropout voltage is limited by minimum input voltage Vin = 2.9 V recommended for guaranteed operation. www.onsemi.com 14 NCV8535 ELECTRICAL CHARACTERISTICS – Adjustable (Vout = 1.25 V typical, Vin = 2.9 V, TA = −40°C to +85°C, unless otherwise noted, Note 31) Characteristic Symbol Min Typ Max Unit Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 25°C Vref −0.9% 1.239 1.25 +0.9% 1.261 V Reference Voltage (Accuracy) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = 0°C to +85°C Vref −1.4% 1.233 1.25 +1.4% 1.268 V Reference Voltage (Accuracy) (Note 32) Vin = 2.9 V to Vout + 4.0 V, Iload = 0.1 mA to 500 mA, TA = −40°C to +125°C Vref −1.5% 1.231 1.25 +1.5% 1.269 V Line Regulation Vin = 2.9 V to 12 V, Iload = 0.1 mA LineReg 0.04 mV/V Load Regulation Vin = 2.9 V, Iload = 0.1 mA to 500 mA LoadReg 0.04 mV/mA Dropout Voltage (See App Note), Vout = 2.5 V to 10 V Iload = 500 mA (Note 33) Iload = 300 mA Iload = 50 mA Iload = 0.1 mA VDO Peak Output Current (Note 33) (See Figure 16) Ipk mV 340 230 110 10 Vout ≤ 3.3 V Vout > 3.3 V Short Output Current (See Figure 16) Thermal Shutdown 500 Isc TJ Ground Current In Regulation Iload = 500 mA (Note 33) Iload = 300 mA (Note 33) Iload = 50 mA Iload = 0.1 mA 700 860 mA 900 990 mA °C 160 IGND In Dropout Vin = Vout −0.1 V or 2.2 V (whichever is higher), Iload = 0.1 mA In Shutdown SD = 0 V IGNDsh Output Noise Cnr = 0 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF Cnr = 10 nF, Iload = 500 mA, f = 10 Hz to 100 kHz, Cout = 10 mF 9.0 4.6 0.8 − 14 7.5 2.5 190 mA − 500 mA 0.07 1.0 mA Vnoise mVrms mVrms 38 26 Shutdown Threshold Voltage ON Threshold Voltage OFF 2.0 0.4 Vin ≤ 5.4 V Vin > 5.4 V mA V V ISD 0.07 1.0 5.0 mA Output Current In Shutdown Mode, Vout = 0 V IOSD 0.07 1.0 mA Reverse Bias Protection, Current Flowing from the Output Pin to GND (Vin = 0 V, Vout_forced = Vout (nom) ≤ 7 V) (Note 34) IOUTR 1.0 SD Input Current, VSD = 0 V to 0.4 V or VSD = 2.0 V to Vin mA 31. Performance guaranteed over the operating temperature range by design and/or characterization, production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 32. For output current capability for TA < 0°C, please refer to Figures 18 to 22. 33. TA must be greater than 0°C. 34. Reverse bias protection feature valid only if Vout − Vin ≤ 7 V. www.onsemi.com 15 NCV8535 5.10 3.05 5.05 3.02 VOUT = 5.0 V 4.95 3.01 3.00 VOUT = 3.0 V 2.99 2.98 2.97 4.90 2.96 −15 10 35 60 85 110 2.95 −40 135 150 20 40 60 80 100 120 140 Figure 5. Output Voltage vs. Temperature 5.0 V Version Figure 6. Output Voltage vs. Temperature 3.0 V Version 2.550 2.84 2.540 2.83 2.530 2.82 2.520 2.81 2.510 2.80 VOUT = 2.8 V 2.79 2.500 2.480 2.77 2.470 2.76 2.460 −20 0 20 40 60 80 100 120 2.450 −40 140 VOUT = 2.5 V 2.490 2.78 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 7. Output Voltage vs. Temperature 2.8 V Version Figure 8. Output Voltage vs. Temperature 2.5 V Version 1.85 1.55 1.84 1.54 1.83 1.53 1.82 1.52 1.81 1.51 1.80 VOUT = 1.8 V 1.79 1.50 1.48 1.77 1.47 1.76 1.46 −20 0 20 40 60 80 100 120 1.45 −40 140 VOUT = 1.5 V 1.49 1.78 1.75 −40 0 TA, TEMPERATURE (°C) 2.85 2.75 −40 −20 TA, TEMPERATURE (°C) VOUT (V) VOUT (V) VOUT (V) 5.00 4.85 −40 VOUT (V) 3.03 VOUT (V) OUTPUT VOLTAGE, VOUT (V) 3.04 −20 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 9. Output Voltage vs. Temperature 1.8 V Version Figure 10. Output Voltage vs. Temperature 1.5 V Version www.onsemi.com 16 NCV8535 400 400 350 350 500 mA 250 300 mA 200 150 50 mA 100 250 300 mA 200 150 50 mA 100 50 50 0 0 0 20 40 60 80 100 120 140 0 100 120 140 500 mA 900 800 VDO (mV) 500 mA 700 600 300 mA 300 200 700 300 mA 600 500 400 50 mA 300 200 100 0 50 mA 0 80 TA, TEMPERATURE (°C) 1100 1000 100 0 60 Figure 12. Dropout Voltage vs. Temperature 2.5 V Version 1200 500 400 40 TA, TEMPERATURE (°C) 1100 1000 900 800 20 Figure 11. Dropout Voltage vs. Temperature 2.8 V Version 1200 VDO (mV) 500 mA 300 VDO (mV) VDO (mV) 300 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 TA, TEMPERATURE (°C) TA, TEMPERATURE (°C) Figure 13. Dropout Voltage vs. Temperature 1.8 V Version Figure 14. Dropout Voltage vs. Temperature 1.5 V Version 1000 900 0.97 Vout Isc 700 Ipk 600 Vout (V) Ipk (mA), Isc (mA) 800 500 400 300 200 100 0 0 20 40 60 80 100 120 Ipk Isc Iout (mA) (For specific values of Ipk and Isc, please refer to Figure 15) 140 TA, TEMPERATURE (°C) Figure 15. Peak and Short Current vs. Temperature Figure 16. Output Voltage vs. Output Current www.onsemi.com 17 NCV8535 0.8 12 0.7 0°C 10 0.6 −40°C 0.5 IOUT (A) IGND (mA) −20°C 500 mA 8 6 300 mA 0.4 0.3 4 0.2 2 0.1 50 mA 0 3.85 3.75 3.65 3.55 3.45 3.35 3.25 3.15 3.05 2.95 2.85 0 0 20 40 60 80 100 TA, TEMPERATURE (°C) 120 140 VIN (V) Figure 18. Output Current Capability for the 2.85 V Version Figure 17. Ground Current vs. Temperature 800 0.8 700 0°C 0.7 −40°C 500 −30°C −20°C 400 −10°C 300 0.5 −40°C 0.4 −30°C 0.3 200 0.2 100 0.1 0 3.8 −20°C 0 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8 3.5 3.4 3.3 3.2 3.1 3.0 2.9 2.8 2.7 2.6 2.5 VIN (V) VIN (V) Figure 19. Output Current Capability for the 2.8 V Version Figure 20. Output Current Capability for the 2.5 V Version 800 800 125°C 125°C 700 700 85°C 85°C 600 600 500 −40°C 500 IOUT (mA) IOUT (mA) −10°C 0°C 0.6 IOUT (A) IOUT (mA) 600 −30°C −20°C 400 300 −10°C −40°C 400 −30°C −20°C 300 −10°C 0°C 200 200 25°C 0°C 25°C 100 100 0 0 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 3.2 3.0 2.8 2.6 2.4 2.2 2.0 VIN (V) VIN (V) Figure 21. Output Current Capability for the 1.8 V Version Figure 22. Output Current Capability for the 1.5 V Version www.onsemi.com 18 1.8 NCV8535 450 NOISE DENSITY (nV/ǠHz) 500 90 RR, RIPPLE REJECTION (dB) 100 80 70 50 mA 250 mA 60 50 500 mA 40 30 20 10 Vout = 2.5 V Cout = 10 mF TJ = 25°C 0 0.01 Cout = 1.0 mF Cnr = 0 nF 400 350 300 250 200 Cout = 1.0 mF Cnr = 10 nF 150 Vout = 2.5 V Iout = 500 mA TJ = 25°C 100 50 Cout = 10 mF Cnr = 10 nF 0 0.1 1.0 10 Cout = 10 mF Cnr = 0 nF 0.01 100 0.1 1.0 10 F, FREQUENCY (kHz) F, FREQUENCY (kHz) Figure 23. Ripple Rejection vs. Frequency Figure 24. Output Noise Density 100 300 qJA (°C/W) 250 200 150 1 oz CF 100 2 oz CF 50 0 0 100 200 300 400 500 COPPER HEAT SPREADING AREA 600 700 (mm2) Figure 25. DFN 10 Self Heating Thermal Characteristic as a Function of Copper Area on the PCB 15 15 5 V, 0.1 mF 5 V, 10 mF 5 V, 1.0 mF 10 10 ESR (W) MAXIMUM ESR (W) Vin at Data Sheet Test Conditions, 25°C, 1 mF Capacitance Unstable Area 5.0 1.25 V 5.0 Min ESR Stable Area 0 0 0 100 200 300 400 500 0 100 200 300 400 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 26. Stability with ESR vs. Iout Figure 27. Output Current vs. ESR NOTE: Typical characteristics were measured with the same conditions as electrical characteristics. www.onsemi.com 19 500 NCV8535 APPLICATIONS INFORMATION Reverse Bias Protection Adjustable Operation Reverse bias is a condition caused when the input voltage goes to zero, but the output voltage is kept high either by a large output capacitor or another source in the application which feeds the output pin. Normally in a bipolar LDO all the current will flow from the output pin to input pin through the PN junction with limited current capability and with the potential to destroy the IC. Due to an improved architecture, the NCV8535 can withstand up to 7.0 V on the output pin with virtually no current flowing from output pin to input pin, and only negligible amount of current (tens of mA) flowing from the output pin to ground for infinite duration. The output voltage can be set by using a resistor divider as shown in Figure 2 with a range of 1.25 to 10 V. The appropriate resistor divider can be found by solving the equation below. The recommended current through the resistor divider is from 10 mA to 100 mA. This can be accomplished by selecting resistors in the kW range. As result, the Iadj*R2 becomes negligible in the equation and can be ignored. ǒ Ǔ Vout + 1.25 * 1 ) R1 ) Iadj * R2 R2 (eq. 1) Example: For Vout = 2.9 V, can use R1 = 36 kW and R2 = 27 kW. ǒ 1.25 * 1 ) Input Capacitor An input capacitor of at least 1.0 mF, any type, is recommended to improve the transient response of the regulator and/or if the regulator is located more than a few inches from the power source. It will also reduce the circuit’s sensitivity to the input line impedance at high frequencies. The capacitor should be mounted with the shortest possible track length directly across the regular’s input terminals. Ǔ 36 kW + 2.91 V 27 kW (eq. 2) Dropout Voltage The voltage dropout is measured at 97% of the nominal output voltage. No−Load Regulation Considerations If there is no load at output of the regulator and ambient temperature is higher than 85°C leakage current flowing from input to output through pass transistor may cause increase of output voltage out of specification range up to input voltage level. To avoid this situation minimum load current of 100 mA or higher is recommended if ambient temperature exceeds 85°C. Output Capacitor The NCV8535 remains stable with any type of capacitor as long as it fulfills its 1.0 mF requirement. There are no constraints on the minimum ESR and it will remain stable up to an ESR of 5.0 W. Larger capacitor values will improve the noise rejection and load transient response. Thermal Considerations Internal thermal limiting circuitry is provided to protect the integrated circuit in the event that the maximum junction temperature is exceeded. This feature provides protection from a catastrophic device failure due to accidental overheating. This protection feature is not intended to be used as a substitute to heat sinking. The maximum power that can be dissipated, can be calculated with the equation below: Noise Reduction Pin Output noise can be greatly reduced by connecting a 10 nF capacitor (Cnr) between the noise reduction pin and ground (see Figure 1). In applications where very low noise is not required, the noise reduction pin can be left unconnected. For the adjustable version, in addition to the 10 nF Cnr, a 68 pF capacitor connected in parallel with R1 (see Figure 2) is recommended to further reduce output noise and improve stability. PD + www.onsemi.com 20 TJ(max) * TA RqJA (eq. 3) NCV8535 DEVICE ORDERING INFORMATION Device* Voltage Option Marking Code NCV8535MNADJR2G Adj. V8535 ADJ NCV8535MN150R2G 1.5 V V8535 150 NCV8535MN180R2G 1.8 V V8535 180 NCV8535MN190R2G 1.9 V V8535 190 NCV8535MN250R2G 2.5 V V8535 250 NCV8535MN280R2G 2.8 V V8535 280 NCV8535MN285R2G 2.85 V V8535 285 NCV8535MN300R2G 3.0 V V8535 300 NCV8535MN330R2G 3.3 V V8535 330 NCV8535MN350R2G 3.5 V V8535 350 NCV8535MN500R2G 5.0 V V8535 500 NCV8535MLADJR2G** Adj. L8535 ADJ NCV8535ML180R2G** 1.8 V L8535 180 NCV8535ML250R2G** 2.5 V L8535 250 NCV8535ML330R2G** 3.3 V L8535 330 NCV8535ML500R2G** 5.0 V L8535 500 Package Feature Shipping† DFN10 (Pb−Free) Non−Wettable Flank 3000 / Tape & Reel DFN10 (Pb−Free) Wettable Flank SLP Process 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable. **In Development. www.onsemi.com 21 NCV8535 PACKAGE DIMENSIONS DFN10, 3x3, 0.5P CASE 485C ISSUE E D A B L L L1 PIN ONE REFERENCE 2X 2X 0.15 C ALTERNATE A−1 ÇÇÇ ÇÇÇ ÇÇÇ 0.15 C DETAIL A E ALTERNATE TERMINAL CONSTRUCTIONS TOP VIEW A1 (A3) DETAIL B ALTERNATE A−2 ÇÇ ÉÉ A3 A1 C D2 DETAIL A 10X 1 DIM A A1 A3 b D D2 E E2 e K L L1 ALTERNATE B−2 ALTERNATE CONSTRUCTIONS 0.08 C SIDE VIEW MOLD CMPD DETAIL B A 10X ÉÉÉ ÇÇÇ EXPOSED Cu ALTERNATE B−1 0.10 C NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. TERMINAL b MAY HAVE MOLD COMPOUND MATERIAL ALONG SIDE EDGE. MOLD FLASHING MAY NOT EXCEED 30 MICRONS ONTO BOTTOM SURFACE OF TERMINAL b. 6. FOR DEVICE OPN CONTAINING W OPTION, DETAIL A AND B ALTERNATE CONSTRUCTION ARE NOT APPLICABLE. WETTABLE FLANK CONSTRUCTION IS DETAIL B AS SHOWN ON SIDE VIEW OF PACKAGE. SEATING PLANE L A3 A1 5 SOLDERING FOOTPRINT* DETAIL B WETTABLE FLANK OPTION CONSTRUCTION 10 6 10X e BOTTOM VIEW 2.64 PACKAGE OUTLINE E2 K MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.40 2.60 3.00 BSC 1.70 1.90 0.50 BSC 0.19 TYP 0.35 0.45 0.00 0.03 10X 0.55 1.90 b 3.30 0.10 C A B 0.05 C NOTE 3 10X 0.30 0.50 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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