ICSI IC41LV1665-30T 64k x16 bit dynamic ram with fast page mode Datasheet

IC41C1665
IC41LV1665
Document Title
64K x16 bit Dynamic RAM with Fast Page Mode
Revision History
Revision No
History
Draft Date
0A
Initial Draft
October 17,2001
Remark
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
1
IC41C1665
IC41LV1665
64K x 16 (1-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
FEATURES
•
•
•
•
•
•
•
•
DESCRIPTION
The ICSI IC41C1665 and the IC41LV1665 are 65,536 x 16Fast access and cycle time
bit high-performance CMOS Dynamic Random Access
TTL compatible inputs and outputs
Memory. Fast Page Mode allows 256 random accesses
Refresh Interval: 256 cycles/4 ms
within a single row with access cycle time as short as 12 ns
per 16-bit word. The Byte Write control, of upper and lower
Refresh Mode: RAS-Only, CAS-before-RAS
byte, makes these devices ideal for use in 16-, 32-bit wide
(CBR), Hidden
data bus systems.
JEDEC standard pinout
These features make the IC41C1665 and the IC41LV1665
Single power supply:
ideally suited for high band-width graphics, digital signal
— 5V ± 10% (IC41C1665)
processing, high-performance computing systems, and
peripheral applications.
— 3.3V ± 10% (IC41LV1665)
The IC41C1665 and the IC41LV1665 are packaged in a 40Byte Write and Byte Read operation via
pin, 400mil SOJ and TSOP-2.
two CAS
Available in 40-pin SOJ and TSOP-2
KEY TIMING PARAMETERS
Parameter
PIN CONFIGURATIONS
-25
-30
-35
-40
Unit
Max. RAS Access Time (tRAC)
25
Max. CAS Access Time (tCAC)
8
Max. Column Address Access Time (tAA) 12
Min. Fast Page Mode Cycle Time (tPC)
15
30
9
16
20
35
10
18
23
40
11
20
25
ns
ns
ns
ns
Min. Read/Write Cycle Time (tRC)
55
65
75
ns
43
40-Pin SOJ
40-Pin TSOP-2
VCC
1
40
GND
VCC
1
40
GND
I/O0
2
39
I/O15
I/O0
2
39
I/O15
I/O1
3
38
I/O14
I/O1
3
38
I/O14
I/O2
4
37
I/O13
I/O2
4
37
I/O13
I/O3
5
36
I/O12
VCC
6
35
GND
I/O4
7
34
I/O11
I/O5
8
33
I/O6
9
32
I/O7
10
31
PIN DESCRIPTIONS
I/O3
5
36
I/O12
VCC
6
35
GND
A0-A7
Address Inputs
I/O10
I/O4
7
34
I/O11
I/O0-I/O15
Data Inputs/Outputs
I/O9
I/O5
8
33
I/O10
I/O8
I/O6
9
32
I/O9
WE
Write Enable
I/O7
10
31
I/O8
OE
Output Enable
NC
11
30
NC
NC
12
29
LCAS
RAS
Row Address Strobe
UCAS
Upper Column Address
Strobe
LCAS
Lower Column Address
Strobe
NC
11
30
NC
NC
12
29
LCAS
WE
13
28
UCAS
RAS
14
27
OE
NC
15
26
A0
16
25
A1
17
A2
18
A3
VCC
WE
13
28
UCAS
RAS
14
27
OE
NC
NC
15
26
NC
A7
A0
16
25
A7
24
A6
A1
17
24
A6
23
A5
A2
18
23
A5
Vcc
Power
19
22
A4
A3
19
22
A4
20
21
GND
VCC
20
21
GND
GND
Ground
NC
No Connection
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
FUNCTIONAL BLOCK DIAGRAM
OE
WE
LCAS
UCAS
CAS
CLOCK
GENERATOR
WE
CONTROL
LOGICS
CAS
WE
OE
CONTROL
LOGIC
OE
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
ADDRESS
BUFFERS
A0-A7
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
ROW DECODER
REFRESH
COUNTER
MEMORY ARRAY
65,536 x 16
DATA I/O BUFFERS
RAS
CLOCK
GENERATOR
RAS
RAS
I/O0-I/O15
3
IC41C1665
IC41LV1665
TRUTH TABLE
Function
Standby
Read: Word
Read: Lower Byte
RAS
H
L
L
Read: Upper Byte
L
H
Write: Word (Early Write)
Write: Lower Byte (Early Write)
L
L
Write: Upper Byte (Early Write)
L
Read-Write(1,2)
Hidden Refresh2)
RAS-Only Refresh
CBR Refresh(3)
L
Read L→H→L
Write L→H→L
L
H→L
LCAS UCAS
H
H
L
L
L
H
WE
X
H
H
OE
X
L
L
Address tR/tC
X
ROW/COL
ROW/COL
L
H
L
ROW/COL
L
L
L
H
L
L
X
X
ROW/COL
ROW/COL
H
L
L
X
ROW/COL
L
L
L
H
L
L
L
L
H
L
H→L
H
L
X
X
L→H
L
X
X
X
ROW/COL
ROW/COL
ROW/COL
ROW/NA
X
I/O
High-Z
DOUT
Lower Byte, DOUT
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, DOUT
DIN
Lower Byte, DIN
Upper Byte, High-Z
Lower Byte, High-Z
Upper Byte, DIN
DOUT, DIN
DOUT
DIN
High-Z
High-Z
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. At least one of the two CAS signals must be active (LCAS or UCAS).
4
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
FUNCTIONAL DESCRIPTION
The IC41C1665 and the IC41LV1665 are CMOS DRAMs
optimized for high-speed bandwidth, low-power applications.
During READ or WRITE cycles, each bit is uniquely
addressed through the 16 address bits. These are entered
nine bits (A0-A7) at a time. The row address is latched by the
Row Address Strobe (RAS). The column address is latched
by the Column Address Strobe (CAS). RAS is used to latch
the first eight bits and CAS is used to latch the latter eight
bits.
The IC41C1665 and the IC41LV1665 have two CAS controls,
LCAS and UCAS. The LCAS and UCAS inputs internally
generate a CAS signal functioning in an identical manner to
the single CAS input on the other 64K x 16 DRAMs. The key
difference is that each CAS controls its corresponding I/O
tristate logic (in conjunction with OE and WE and RAS).
LCAS controls I/O0 - I/O7 and UCAS controls I/O8 - I/O15.
The IC41C1665/IC41LV1665 CAS function is determined by
the first CAS (LCAS or UCAS) transitioning LOW and the last
transitioning back HIGH. The two CAS controls give the
IC41C1665 both BYTE READ and BYTE WRITE cycle
capabilities.
Memory Cycle
A memory cycle is initiated by bringing RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensure proper device operation and data integrity any
memory cycle, once initiated, must not be ended or aborted
before the minimum tRAS time has expired. A new cycle must
not be initiated until the minimum precharge time tRP, tCP has
elapsed.
Write Cycle
A write cycle is initiated by the falling edge of CAS and WE,
whichever occurs last. The input data must be valid at or
before the falling edge of CAS or WE, whichever occurs last.
Refresh Cycle
To retain data, 256 refresh cycles are required in each
4 ms period. There are two ways to refresh the memory:
1. By clocking each of the 256 row addresses (A0 through
A7) with RAS at least once every 4 ms. Any read, write,
read-modify-write or RAS-only cycle refreshes the addressed row.
2. Using a CAS-before-RAS refresh cycle. CAS-before-RAS
refresh is activated by the falling edge of RAS, while
holding CAS LOW. In CAS-before-RAS refresh cycle, an
internal 8-bit counter provides the row addresses and the
external address inputs are ignored.
CAS-before-RAS is a refresh-only mode and no data access
or device selection is allowed. Thus, the output remains in
the High-Z state during the cycle.
Power-On
After application of the VCC supply, an initial pause of
200 µs is required followed by a minimum of eight initialization
cycles (any combination of cycles containing a RAS signal).
During power-on, it is recommended that RAS track with VCC
or be held at a valid VIH to avoid current surges.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The column
address must be held for a minimum time specified by tAR.
Data Out becomes valid only when tRAC, tAA, tCAC and tOE are
all satisfied. As a result, the access time is dependent on the
timing relationships between these parameters.
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
5
IC41C1665
IC41LV1665
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
VT
Voltage on Any Pin Relative to GND
VCC
Supply Voltage
IOUT
PD
TA
Output Current
Power DICSIpation
Operation Temperature
TSTG
Storage Temperature
5V
3.3V
5V
3.3V
Com.
Ind.
Rating
Unit
–1.0 to +7.0
–0.5 to +4.6
–1.0 to +7.0
–0.5 to +4.6
50
1
0 to +70
-40 to +85
–55 to +125
V
V
V
V
mA
W
o
C
o
C
o
C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND)
Symbol
Parameter
VCC
Supply Voltage
VIH
Input High Voltage
VIL
Input Low Voltage
TA
Ambient Temperature
5V
3.3V
5V
3.3V
5V
3.3V
Com.
Ind.
Min.
Typ.
Max.
Unit
4.5
3.0
2.4
2.0
–1.0
–0.3
0
–40
5.0
3.3
—
—
—
—
—
—
5.5
3.6
VCC + 1.0
VCC + 0.3
0.8
0.8
70
85
V
V
V
V
V
V
o
C
o
C
CAPACITANCE(1,2)
Symbol
Parameter
CIN1
CIN2
CIO
Input Capacitance: A0-A7
Input Capacitance: RAS, UCAS, LCAS, WE, OE
Data Input/Output Capacitance: I/O0-I/O15
Max.
Unit
5
7
7
pF
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25oC, f = 1 MHz, VCC = 5.0V + 10%, or VCC = 3.3V + 10%.
6
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
ELECTRICAL CHARACTERISTICS(1) (Recommended Operation Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
Speed
Min.
Max.
Unit
–10
10
µA
–10
10
µA
2.4
—
—
0.4
V
V
mA
mA
mA
mA
mA
mA
mA
IIL
Input Leakage Current
IIO
Output Leakage Current
VOH
VOL
Output High Voltage Level
Output Low Voltage Level
Any input 0V ≤ VIN ≤ Vcc
Other inputs not under test = 0V
Output is disabled (Hi-Z)
0V ≤ VOUT ≤ Vcc
IOH = –5 mA
IOL = +4.2 mA
ICC1
Stand-by Current: TTL
RAS, LCAS, UCAS ≥ VIH
5V
—
2
ICC1
Stand-by Current: TTL
RAS, LCAS, UCAS ≥ VIH
3.3V
—
1
ICC2
ICC2
ICC3
Stand-by Current: CMOS
Stand-by Current: CMOS
Operating Current:
Random Read/Write(2,3,4)
Average Power Supply Current
RAS, LCAS, UCAS ≥ VCC – 0.2V
RAS, LCAS, UCAS ≥ VCC – 0.2V
RAS, LCAS, UCAS,
Address Cycling, tRC = tRC (min.)
ICC4
Operating Current:
Fast Page Mode(2,3,4)
Average Power Supply Current
RAS = VIL, LCAS, UCAS,
Cycling tPC = tPC (min.)
ICC5
Refresh Current:
RAS-Only(2,3)
Average Power Supply Current
RAS Cycling, LCAS, UCAS ≥ VIH
tRC = tRC (min.)
ICC6
Refresh Current:
CBR(2,3,5)
Average Power Supply Current
RAS, LCAS, UCAS Cycling
tRC = tRC (min.)
5V
3.3V
-25
-30
-35
-40
-25
-30
-35
-40
-25
-30
-35
-40
-25
-30
-35
-40
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
0.5
170
150
130
120
170
150
130
120
170
150
130
120
170
150
130
120
mA
mA
mA
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper
device operation is assured.The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is
exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each fast page cycle.
5. Enables on-chip refresh and address counters.
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
7
IC41C1665
IC41LV1665
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Parameter
tRC
tRAC
tCAC
tAA
tRAS
tRP
tCAS
tCP
tCSH
tRCD
tASR
tRAH
tASC
tCAH
tAR
Random READ or WRITE Cycle Time
Access Time from RAS(6, 7)
Access Time from CAS(6, 8, 15)
Access Time from Column-Address(6)
RAS Pulse Width
RAS Precharge Time
CAS Pulse Width(26)
CAS Precharge Time(9, 25)
CAS Hold Time (21)
RAS to CAS Delay Time(10, 20)
Row-Address Setup Time
Row-Address Hold Time
Column-Address Setup Time(20)
Column-Address Hold Time(20)
Column-Address Hold Time
(referenced to RAS)
RAS to Column-Address Delay Time(11)
Column-Address to RAS Lead Time
RAS to CAS Precharge Time
RAS Hold Time(27)
CAS to Output in Low-Z(15, 29)
CAS to RAS Precharge Time(21)
Output Disable Time(19, 28, 29)
Output Enable Time(15, 16)
OE LOW to CAS HIGH Setup Time
Read Command Setup Time(17, 20)
Read Command Hold Time
(referenced to RAS)(12)
Read Command Hold Time
(referenced to CAS)(12, 17, 21)
Write Command Hold Time(17, 27)
Write Command Hold Time
(referenced to RAS)(17)
Write Command Pulse Width(17)
Write Command to RAS Lead Time(17)
Write Command to CAS Lead Time(17, 21)
Write Command Setup Time(14, 17, 20)
Data-in Hold Time (referenced to RAS)
tRAD
tRAL
tRPC
tRSH
tCLZ
tCRP
tOD
tOE
tOES
tRCS
tRRH
tRCH
tWCH
tWCR
tWP
tRWL
tCWL
tWCS
tDHR
-25
Min. Max.
-30
Min. Max.
-35
Min. Max.
-40
Min. Max.
43
—
—
—
25
15
4
4
21
10
0
5
0
5
22
—
25
8
12
10k
—
10k
—
—
17
—
—
—
—
—
55
—
—
—
30
20
9
5
30
10
0
5
0
5
26
—
30
9
16
10K
—
10K
—
—
21
—
—
—
—
—
65
—
—
—
35
23
10
6
35
10
0
5
0
5
30
—
35
10
18
10K
—
10K
—
—
25
—
—
—
—
—
75
—
—
—
40
25
11
7
40
10
0
5
0
5
34
—
40
11
20
10K
—
10K
—
—
29
—
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
8
12
10
8
3
5
—
—
5
0
0
13
—
—
—
—
—
6
8
—
—
—
8
16
10
9
3
5
—
—
5
0
0
14
—
—
—
—
—
8
9
—
—
—
8
18
10
10
3
5
—
—
5
0
0
17
—
—
—
—
—
8
10
—
—
—
8
20
10
11
3
5
—
—
5
0
0
20
—
—
—
—
—
8
11
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
0
—
0
—
0
—
0
—
ns
5
22
—
—
5
26
—
—
5
30
—
—
5
34
—
—
ns
ns
5
7
5
0
22
—
—
—
—
—
5
8
6
0
26
—
—
—
—
—
5
9
7
0
30
—
—
—
—
—
5
10
8
0
34
—
—
—
—
—
ns
ns
ns
ns
ns
Units
(Continued)
8
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
-25
Min. Max.
Symbol Parameter
tACH
tOEH
tDS
tDH
tRWC
tRWD
tCWD
tAWD
tPC
tRASP
tCPA
tPRWC
tOFF
tCLCH
tCSR
tCHR
tORD
tREF
tT
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
OE Hold Time from WE during
READ-MODIFY-WRITEcycle(18)
Data-In Setup Time(15, 22)
Data-In Hold Time(15, 22)
READ-MODIFY-WRITE Cycle Time
RAS to WE Delay Time during
READ-MODIFY-WRITECycle(14)
CAS to WE Delay Time(14, 20)
Column-Address to WE Delay Time(14)
Fast Page Mode READ or WRITE
Cycle Time(24)
Fast Page Mode RAS Pulse Width
Access Time from CAS Precharge(15)
Fast Page Mode READ-WRITE Cycle Time(24)
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 29)
Last CAS going LOW to First CAS
returning HIGH(23)
CAS Setup Time (CBR REFRESH)(30, 20)
CAS Hold Time (CBR REFRESH)(30, 21)
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
Refresh Period (256 Cycles)
Transition Time (Rise or Fall)(2, 3)
-30
Min. Max.
-35
Min. Max.
-40
Min. Max.
Units
15
—
15
—
15
—
15
—
ns
4
—
4
—
4
—
5
—
ns
0
5
65
34
—
—
—
—
0
5
85
46
—
—
—
—
0
5
95
51
—
—
—
—
0
5
105
56
—
—
—
—
ns
ns
ns
ns
17
21
15
—
—
—
25
32
20
—
—
—
26
34
23
—
—
—
27
36
25
—
—
—
ns
ns
ns
25
—
37
3
10k
14
—
15
30
—
42
3
10K
18
—
15
35
—
49
3
10K
20
—
15
40
—
52
3
10K
22
—
15
ns
ns
ns
ns
4
—
9
—
10
—
11
—
ns
5
7
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
10
10
0
—
—
—
ns
ns
ns
—
1
4
50
—
1
4
50
—
1
4
50
—
1
4
50
ms
ns
AC TEST CONDITIONS
Output load:
Two TTL Loads and 50 pF (Vcc = 5.0V ±10%)
One TTL Load and 50 pF (Vcc = 3.3V ±10%)
Input timing reference levels: VIH = 2.4V, VIL = 0.8V (Vcc = 5.0V ±10%);
VIH = 2.0V, VIL = 0.8V (Vcc = 3.3V ±10%)
Output timing reference levels: VOH = 2.0V, VOL = 0.8V (Vcc = 5V ±10%, 3.3V ±10%)
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
9
IC41C1665
IC41LV1665
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH
and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH)
in a monotonic manner.
4. If CAS and RAS = VIH, data output is High-Z.
5. If CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that tRCD ≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase
by the amount that tRCD exceeds the value shown.
8. Assumes that tRCD ≥ tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the
data output buffer, CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD
is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD
is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS ≥ tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD ≥ tRWD
(MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back
to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a
LATE WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW
and OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first χCAS edge to transition LOW.
21. The last χCAS edge to transition HIGH.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles.
23. Last falling χCAS edge to first rising χCAS edge.
24. Last rising χCAS edge to next cycleÕs last rising χCAS edge.
25. Last rising χCAS edge to first falling χCAS edge.
26. Each χCAS must meet minimum pulse width.
27. Last χCAS to go LOW.
28. I/Os controlled, regardless UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.
10
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
READ CYCLE
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
tRRH
UCAS-LCAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tASC
Row
Column
Row
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLZ
I/O
tOFF(1)
Open
Open
Valid Data
tOE
tOD
OE
tOES
Don’t Care
Note:
1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
11
IC41C1665
IC41LV1665
READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
tRWC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
UCAS/LCAS
tAR
tRAD
tRAH
tASR
tRAL
tCAH
tASC
tACH
ADDRESS
Row
Column
Row
tRWD
tCWL
tRWL
tCWD
tRCS
tAWD
tWP
WE
tAA
tRAC
tCAC
tCLZ
I/O
tDS
Open
Valid DOUT
tOE
tOD
tDH
Valid DIN
Open
tOEH
OE
Don’t Care
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Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
EARLY WRITE CYCLE (OE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
UCAS/LCAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tACH
tASC
Row
Column
Row
tCWL
tRWL
tWCR
tWCS
tWCH
tWP
WE
tDHR
tDS
I/O
tDH
Valid Data
Don’t Care
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
13
IC41C1665
IC41LV1665
FAST PAGE MODE READ CYCLE
tRASP
tRP
RAS
tPC
tCSH
tCAS
tCRP
tRSH
tCAS
tCAS
tRCD
tCP
tCRP
tCP
UCAS/LCAS
tAR
tRAL
tRAH
tRAD
tASC
tASR
ADDRESS
Row
tCAH
tASC
tAR
Column
tCAH
tCAH
tASC
Column
Column
tCPA
tAA
tCPA
tAA
tRCS
WE
tAA
tCAC
tCAC
tOE
tCAC
tOE
tOE
OE
tRAC
tOD
tCLZ
I/O
tOD
tCLZ
OUT
tOD
tCLZ
OUT
OUT
Don’t Care
14
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
FAST PAGE MODE READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
tRASP
tRP
RAS
tPRWC
tCAS
tCSH
tCAS
tCRP
tRCD
tRSH
tCAS
tCP
tCRP
tCP
UCAS/LCAS
tAR
tRAH
tRAD
tASC
tASR
ADDRESS
tCPWD
tRAL
tCAH
tCPWD
Row
tCAH
tAR
Column
tASC
Column
tCWL
tRWD
tAWD
tCWD
tRCS
tCAH
tASC
Column
tCWL
tRWL
tCWL
tAWD
tCWD
tWP
tAWD
tCWD
tWP
tWP
WE
tAA
tAA
tCAC
tAA
tCAC
tOE
tCAC
tOE
tOE
OE
tOEZ
tOED
tRAC
OUT
IN
tOEZ
tOED
tDH
tDH
tDS tCLZ
tCLZ
I/O0-I/O15
tOEZ
tOED
tDS
OUT
IN
tDH
tCLZ
OUT
tDS
IN
Don’t Care
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
15
IC41C1665
IC41LV1665
FAST PAGE MODE EARLY WRITE CYCLE
tRASP
tRP
RAS
tCAS
tCRP
tRHCP
tRSH
tCAS
tPC
tCAS
tCSH
tRCD
tCP
tCRP
tCP
UCAS/LCAS
tAR
tRAL
tRAD
tRAH
tASC
tASR
ADDRESS
Row
tCAH
tCAH
tAR
Column
tASC
Column
Column
tCWL
tWCS
tWCH
tCAH
tASC
tCWL
tWCH tWCS
tWCS
tWP
tCWL
tWP
tWCH
tWP
WE
tWCR
OE
tDHR
tDS
tDH
tDS
Valid DIN
I/O0-I/O15
tDH
Valid DIN
tDS
tDH
Valid DIN
Don’t Care
AC WAVEFORMS
RAS
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCRP
tRPC
UCAS/LCAS
tASR
ADDRESS
I/O
tRAH
Row
Row
Open
Don’t Care
16
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
tRP
tRAS
tRP
tRAS
RAS
tCHR
tRPC
tCP
tCHR
tRPC
tCSR
tCSR
UCAS/LCAS
Open
I/O
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
tRAS
tRP
tRAS
RAS
tCRP
tRCD
tASR
tRAD
tRAH tASC
tRSH
tCHR
UCAS/LCAS
tAR
ADDRESS
Row
tRAL
tCAH
Column
tAA
tRAC
tOFF(2)
tCAC
tCLZ
I/O
Open
Open
Valid Data
tOE
tOD
tORD
OE
Don’t Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
17
IC41C1665
IC41LV1665
ORDERING INFORMATION
IC41C1665
Commercial Range: 0°° C to 70°°C
Speed(ns)
OrderPartNo.
Package
25
IC41C1665-25K
IC41C1665-25T
IC41C1665-30K
IC41C1665-30T
IC41C1665-35K
IC41C1665-35T
IC41C1665-40K
IC41C1665-40T
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
30
35
40
ORDERING INFORMATION
IC41LV1665
Commercial Range: 0°° C to 70°°C
Speed(ns)
25
30
35
40
18
OrderPartNo.
Package
IC41LV1665-25K
IC41LV1665-25T
IC41LV1665-30K
IC41LV1665-30T
IC41LV1665-35K
IC41LV1665-35T
IS41LV1665-40K
IC41LV1665-40T
400mil SOJ
400mil T SOP-2
400mil SOJ
400mil T SOP-2
400mil SOJ
400mil T SOP-2
400mil SOJ
400mil T SOP-2
Industrial Range: -40°° C to 85°° C
Speed(ns)
OrderPartNo.
Package
25
IC41C1665-25KI
IC41C1665-25TI
IC41C1665-30KI
IC41C1665-30TI
IC41C1665-35KI
IC41C1665-35TI
IC41C1665-40KI
IC41C1665-40TI
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
30
35
40
Industrial Range: -40°° C to 85°° C
Speed(ns)
25
30
35
40
OrderPartNo.
Package
IC41LV1665-25KI
IC41LV1665-25TI
IC41LV1665-30KI
IC41LV1665-30TI
IC41LV1665-35KI
IC41LV1665-35TI
IC41LV1665-40KI
IC41LV1665-40TI
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
400mil SOJ
400mil TSOP-2
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
IC41C1665
IC41LV1665
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
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http://www.icsi.com.tw
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DR031-0A 10/17/2001
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