CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 1/ 10 N-Channel Enhancement Mode Power MOSFET MTN13N50BFP BVDSS ID @VGS=10V, TC=25°C ID @VGS=10V, TC=100°C RDS(ON)@VGS=10V, ID=6.5A 500V 13A 8.2A 0.36Ω(typ) Description The MTN13N50FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220FP package is universally preferred for all commercial-industrial applications Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Applications • Power Factor Correction • LCD TV Power • Full and Half Bridge Power Ordering Information Device MTN13N50BFP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTN13N50BFP CYStek Product Specification CYStech Electronics Corp. Symbol Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 2/ 10 Outline MTN13N50BFP TO-220FP G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Single Pulse Avalanche Energy @ L=3mH, ID=11Amps, VDD=50V Avalanche Current (Note 2) Peak Diode Recovery dv/dt (Note 3) Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 seconds Total Power Dissipation (TC=25℃) Linear Derating Factor above 25℃ Operating Junction and Storage Temperature Symbol Limits VDS VGS ID ID IDM EAS IAS dv/dt 500 ±30 13* 8* 52* 180 11 3.0 TL 300 TPKG 260 PD 48 0.4 -55~+150 Tj, Tstg Unit V A mJ A V/ns °C W W/°C °C *Drain current limited by maximum junction temperature *100% UIS testing in condition of VDD=50V, L=8mH, VG=10V, IL=6.5A, Rated VDS=500V Note : 1. TJ=+25℃ to +150℃. 2. Repetitive rating; pulse width limited by maximum junction temperature. 3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. MTN13N50BFP CYStek Product Specification Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 3/ 10 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.58 62.5 Unit °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 500 ∆BVDSS/∆Tj VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - Typ. Max. Unit Test Conditions 0.6 14.4 0.36 4.0 ±100 1 10 0.52 V V/°C V S nA Ω VGS=0V, ID=250μA Reference to 25°C, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=6.5A VGS=±30V VDS =500V, VGS =0V VDS =400V, VGS =0V, Tj=125°C VGS =10V, ID=6.5A 44.3 8.6 18.2 19 29.8 74.6 35.6 1620 177 67 - nC ID=13A, VDD=250V, VGS=10V ns VDD=250V, ID=13A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 0.79 310 2.8 13 52 1.2 - μA A V ns μC IS=6.5A, VGS=0V VGS=0, IF=13A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTN13N50BFP CYStek Product Specification Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 4/ 10 CYStech Electronics Corp. Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics RDS(ON), Normalized Static Drain-Source On-state Resistance 30 ID, Drain Current(A) 25 10V,9V,8V,7V,6V 20 5.5V 15 10 5V 5 3.0 2.5 2.0 1.5 1.0 ID=6.5A, VGS=10V 0.5 VGS=4.5V 0.0 0 0 10 20 30 VDS, Drain-Source Voltage(V) 40 -75 50 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) 40 500 450 Ta=25°C 35 VGS=10V 400 ID, Drain Current(A) R DS(ON) , Static Drain-Source OnState Resistance(mΩ) -25 Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 350 300 250 200 150 100 VDS=30V 30 25 20 VDS=10V 15 10 5 50 0 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 VGS, Gate-Source Voltage(V) 10 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 1000 900 VGS=0V 800 IF, Forward Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) -50 700 600 500 400 300 200 ID=6.5A 100 Ta=25°C 10 1 Ta=150°C Ta=25°C 0.1 0.01 0.001 0 0 MTN13N50BFP 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, Source Drain Voltage(V) CYStek Product Specification Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 5/ 10 CYStech Electronics Corp. Typical Characteristics(Cont.) Brekdown Voltage vs Ambient Temperature Capacitance vs Reverse Voltage 10000 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 Capacitance(pF) Ciss 1000 Coss 100 Crss 1.2 1.0 0.8 ID=250μA, VGS=0V f=1MHz 10 0.6 0 5 10 15 20 25 VDS, Drain-to-Source Voltage(V) -75 30 -50 -25 VGS, Gate-Source Voltage(V) ID, Drain Current(A) 100μs 1ms 10ms 100ms DC 8 VDS=250V 6 VDS=380V 4 2 ID=13A 0 0.01 1 10 100 0 1000 5 10 15 20 25 30 35 40 45 VDS, Drain-Source Voltage(V) Qg, Total Gate Charge(nC) Maximum Drain Current vs Case Temperature Threshold Voltage vs Junction Tempearture VGS(th), Normalized Threshold Voltage 15 ID, Maximum Drain Current(A) 100 125 150 175 VDS=90V 10 TC=25°C, Tj(max)=150°C VGS=10V, RθJC=2.58°C/W Single pulse 75 10 10 μs 0.1 50 Gate Charge Characteristics 100 1 25 TA, Ambient Temperature(°C) Maximum Safe Operating Area Operation in this area is limited by RDS(ON) 0 12 9 6 3 VGS=10V, RθJC=2.58°C/W 50 1.4 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 0 25 50 75 100 125 TC, Case Temperature(°C) MTN13N50BFP 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 6/ 10 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Single Pulse Power Rating, Junction to Case GFS , Forward Transfer Admittance(S) 100 2000 1800 TJ(MAX) =150°C TC=25°C RθJC=2.58°C/W 1600 10 Power (W) 1400 1 VDS=15V 0.1 0.01 0.1 1 ID, Drain Current(A) 1000 800 600 Ta=25°C Pulsed 0.01 0.001 1200 400 200 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.58 ° C/W 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-04 MTN13N50BFP 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 7/ 10 Test Circuit and Waveforms MTN13N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 8/ 10 Test Circuit and Waveforms(Cont.) MTN13N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 9/ 10 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN13N50BFP CYStek Product Specification CYStech Electronics Corp. Spec. No. : C113FP Issued Date : 2015.08.28 Revised Date : Page No. : 10/ 10 TO-220FP Dimension Marking: Device Name Date Code 3-Lead TO-220FP Plastic Package CYStek Package Code: FP Style: Pin 1.Gate 2.Drain 3.Source *Typical Inches Min. Max. 0.171 0.183 0.051 REF 0.112 0.124 0.102 0.110 0.020 0.030 0.031 0.041 0.047 REF 0.020 0.030 0.396 0.404 0.583 0.598 0.100 * 0.106 REF DIM A A1 A2 A3 b b1 b2 c D E e F Millimeters Min. Max. 4.35 4.65 1.300 REF 2.85 3.15 2.60 2.80 0.50 0.75 0.80 1.05 1.20 REF 0.500 0.750 10.06 10.26 14.80 15.20 2.54* 2.70 REF DIM G H H1 H2 J K L L1 L2 M N Inches Min. Max. 0.246 0.258 0.138 REF 0.055 REF 0.256 0.272 0.031 REF 0.020 1.102 1.118 0.043 0.051 0.036 0.043 0.067 REF 0.012 REF Millimeters Min. Max. 6.25 6.55 3.50 REF 1.40 REF 6.50 6.90 0.80 REF 0.50 REF 28.00 28.40 1.10 1.30 0.92 1.08 1.70 REF 0.30 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN13N50BFP CYStek Product Specification