CHENMKO ENTERPRISE CO.,LTD CH740S-40PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 40 Volts CURRENT 0.04 Ampere APPLICATION * Low barrier diode for detectors up to GHz frequencies SC-79/SOD-523 FEATURE * Small surface mounting type. (SC-79/SOD-523) * Low VF and low IR * High reliability Cathode (1) (2) 0.25~0.35 0.75~0.85 CONSTRUCTION * Silicon epitaxial planar 1.1~1.3 MARKING * F 0.5~0.77 0.07~0.17 CIRCUIT 1.5~1.7 (2) Dimensions in millimeters (1) SC-79/SOD-523 o MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted ) RATINGS CH740S-40PT SYMBOL Maximum Recurrent Peak Reverse Voltage UNITS MIN. TYP. MAX. VRRM - - 40 Volts IO - - 40 mAmps PTOT - - 150 mW Typical Series Inductance LS - 0.6 - nH Typical Case Capacitance CC - 0.09 - pF Typical Junction Capacitance between Terminal (Note 1) CJ - 0.35 0.6 pF Typical Differential Resistance (Note 2) RO - 225 - k TJ,TSTG -55 - +150 o Maximum Average Forward Rectified Current Total Power Dissipation, TS< 85 oC Operating and Storage Temperature Range C ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) CH740S-40PT CHARACTERISTICS SYMBOL UNITS MIN. TYP. MAX. Maximum Instantaneous Forward Voltage at IF= 2mA VF - 0.58 1.00 Volts Maximum Average Reverse Current at VR= 40V IR - - 10 uAmps NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts. 2. Measured at 1.0 KHZ and applied reverse voltage of 0 volts. 2. ESD sensitive product handling required. 2002-6 RATING CHARACTERISTIC CURVES ( CH740S-40PT ) Forward current I F = f (VF ) Leakage current I R = f (VR) TA = parameter TA = Parameter 10 3 10 4 uA uA 25°C -40°C 85°C 125°C 125°C 10 2 IF IR 10 3 85°C 10 1 10 2 10 0 10 1 0 0.2 0.4 0.6 0.8 1 1.2 V 10 -1 0 1.5 25°C 5 10 15 20 25 V 30 VF 40 VR Diode capacitance C J = f (VR) Rectifier voltage Vout = f (Vin) f = 1MHz f = 900 MHz RL = parameter in k 10 4 mV 0.6 10 3 pF 0.4 VO CJ 10 2 10 1 0.3 10 0 0.2 1000 500 200 100 50 20 10 -1 RL=10 10 -2 0.1 0 0 5 10 15 20 V 30 VR 10 -3 0 10 10 1 10 2 10 3 mV 10 VI 4 RATING CHARACTERISTIC CURVES ( CH740S-40PT ) Permissible Pulse Load Permissible Pulse Load R thJS = f (tp ) I Fmax / I FDC = f (tp) 10 1 I Fmax / I FDC 10 3 R thJS K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp 50 IF mA 30 20 10 20 40 60 80 100 120 °C TS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s tp Forward current I F = f (TS ) 0 0 0 150 10 0