Filtronic LPD200MX High performance phemt Datasheet

PRELIMINARY DATA SHEET
LPD200MX
PACKAGED HIGH DYNAMIC RANGE PHEMT
•
•
FEATURES
♦ 1.0 dB Noise Figure at 1.8 GHz
♦ 15.5 dBm P-1dB 1.8 GHz, 17dBm@6GHz, 10.5dBm@12GHz
♦ 19 dB Power Gain at 1.8 GHz, 10dB@6GHz, 8dB@12GHz
♦ 31 dBm IP3 at 1.8 GHz
♦ 60% Power-Added-Efficiency
DESCRIPTION AND APPLICATIONS
The LPD200 is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs)
Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 µm by 200 µm Schottky barrier gate. The recessed “mushroom” Ti/Pt/Au gate structure
minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing have
been optimized for high dynamic range. The LPD200’s active areas are passivated with Si3N4, and
the micro X package is ideal for low-cost, high-performance applications that require a surfacemount package.
The LPD200MX is designed for commercial systems for use in low noise amplifiers and oscillators
operating over the RF and Microwave frequency ranges. The low noise figure makes it appopriate
for use in receivers in MMDS and GPS. This device is also suitable as a driver stage for WLAN and
ISM band spread spectrum applications.
•
ELECTRICAL SPECIFICATIONS @ TAmbient = 25°C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
45
75
mA
Power at 1-dB Compression
P-1dB
f=1.8GHz; VDS = 5 V; IDS = 50% IDSS
14
15.5
dBm
Power Gain at 1-dB
Compression
G-1dB
f=1.8GHz; VDS = 5 V; IDS = 50% IDSS
18
19
dB
Power-Added Efficiency
PAE
f=1.8GHz; VDS = 5 V; IDS = 50% IDSS;
POUT = 19.5 dBm
60
%
Noise Figure
NF
f=1.8GHz; VDS = 5V; IDS = 50% IDSS
1.4
dB
f=1.8GHz; VDS = 3V; IDS = 25% IDSS
1.0
31
dBm
70
mS
Output Intercept Point
IP3
f=1.8GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 4 dBm
Transconductance
GM
VDS = 2 V; VGS = 0 V
Gate-Source Leakage Current
IGSO
VGS = -5 V
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 1 mA
-0.25
Gate-Source Breakdown
Voltage Magnitude
|VBDGS|
IGS = 1 mA
6
7
V
Gate-Drain Breakdown
Voltage Magnitude
|VBDGD|
IGD = 1 mA
8
9
V
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
50
1
10
µA
-1.5
V
Revised: 5/02/01
Email: [email protected]
PRELIMINARY DATA SHEET
LPD200MX
PACKAGED HIGH DYNAMIC RANGE PHEMT
•
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Test Conditions
Drain-Source Voltage
VDS
Gate-Source Voltage
Min
Max
Units
TAmbient = 22 ± 3 °C
7
V
VGS
TAmbient = 22 ± 3 °C
-3
V
Drain-Source Current
IDS
TAmbient = 22 ± 3 °C
IDSS
mA
Gate Current
IG
TAmbient = 22 ± 3 °C
5
mA
RF Input Power
PIN
TAmbient = 22 ± 3 °C
60
mW
Channel Operating Temperature
TCH
TAmbient = 22 ± 3 °C
175
ºC
Storage Temperature
TSTG
—
175
ºC
-65
Notes: Even temporary operating condions that exceed the Absolute Maximum Ratings could result in permanent
damage to the device.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control
measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory. Complete design data, including S-parameters, noise data, and large-signal models are
available on the Filtronic web site.
•
PACKAGE OUTLINE
(dimensions in inches)
All information and specifications are subject to change without notice.
Phone: (408) 988-1845
Fax: (408) 970-9950
http:// www.filss.com
Revised: 5/02/01
Email: [email protected]
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