IRFH7934PbF HEXFET® Power MOSFET Applications l l VDSS 30V Control MOSFET of Sync-Buck Converters used for Notebook Processor Power Control MOSFET for Isolated DC-DC RDS(on) max Qg 3.5m @VGS = 10V 20nC : Converters in Networking Systems Benefits l l l l l l l l Very low RDS(ON) at 4.5V VGS Low Gate Charge Fully Characterized Avalanche Voltage and Current 100% Tested for RG Lead-Free (Qualified up to 260°C Reflow) RoHS compliant (Halogen Free) Low Thermal Resistance Large Source Lead for more reliable Soldering Base part number Package Type IRFH7934PBF PQFN 5mm x 6mm PQFN 5X6 mm Standard Pack Form Quantity Tape and Reel 4000 Orderable part number IRFH7934TRPBF Absolute Maximum Ratings Max. Units 30 ± 20 V ID @ TA = 25°C Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Parameter ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 19 ID @ TC = 25°C 76 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current 190 PD @TA = 25°C Power Dissipation 3.1 VDS VGS 24 c PD @TA = 70°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W 2.0 g W/°C 0.025 -55 to + 150 °C Thermal Resistance Parameter f RθJC Junction-to-Case RθJA Junction-to-Ambient g Notes through are on page 10 www.irf.com © 2013 International Rectifier 1 Typ. Max. ––– 2.9 ––– 40 Units °C/W August 20, 2013 IRFH7934PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ RDS(on) Breakdown Voltage Temp. Coefficient ––– 0.021 ––– Static Drain-to-Source On-Resistance ––– 2.9 3.5 ––– 4.2 5.1 V V/°C Reference to 25°C, ID = 1mA mΩ VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.5 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 110 ––– ––– Qg IGSS Conditions VGS = 0V, ID = 250μA μA nA S VGS = 10V, ID = 24A e e VGS = 4.5V, ID = 19A VDS = VGS, ID = 50μA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 19A Total Gate Charge ––– 20 30 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.8 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 2.5 ––– Qgd Gate-to-Drain Charge ––– 6.3 ––– Qgodr Gate Charge Overdrive ––– 6.4 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 8.8 ––– Qoss RG Output Charge ––– 15 ––– nC Gate Resistance ––– 1.7 3.1 Ω td(on) Turn-On Delay Time ––– 12 ––– VDD = 15V, VGS = 4.5V tr Rise Time ––– 16 ––– ID = 19A td(off) Turn-Off Delay Time ––– 14 ––– tf Fall Time ––– 7.5 ––– Ciss Input Capacitance ––– 3100 ––– Coss Output Capacitance ––– 623 ––– Crss Reverse Transfer Capacitance ––– 241 ––– VDS = 15V nC VGS = 4.5V ID = 19A See Fig.17 & 18 ns VDS = 16V, VGS = 0V RG=1.8Ω See Fig.15 VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 97 mJ ––– 19 A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. Typ. Max. Units ––– ––– Conditions MOSFET symbol 3.9 A showing the integral reverse D G ––– 190 VSD (Body Diode) Diode Forward Voltage ––– ––– ––– 1.0 V p-n junction diode. TJ = 25°C, IS = 19A, VGS = 0V trr Reverse Recovery Time ––– 20 30 ns TJ = 25°C, IF = 19A, VDD = 15V Qrr Reverse Recovery Charge ––– 28 42 nC di/dt = 325A/μs ton Forward Turn-On Time c 2 S e eSee Fig.16 Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2013 International Rectifier August 20, 2013 IRFH7934PbF 2 1000 1000 100 BOTTOM TOP 10 2.7V ≤ 60μs PULSE WIDTH Tj = 25°C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V 100 BOTTOM ≤ 60μs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 2.7V 10 1 100 TJ = 150°C 10 TJ = 25°C 1 0.1 VDS = 15V ≤ 60μs PULSE WIDTH 0.01 1.0 2.0 3.0 4.0 5.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 VGS 10V 5.0V 4.5V 3.5V 3.3V 3.0V 2.9V 2.7V www.irf.com © 2013 International Rectifier ID = 24A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance vs. Temperature August 20, 2013 IRFH7934PbF 14 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 100000 Coss = Cds + Cgd 10000 Ciss 1000 Coss Crss ID= 19A 12 VDS= 15V 10 8 6 4 2 0 100 1 10 0 100 20 30 40 50 60 70 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ID, Drain-to-Source Current (A) 1000 ISD, Reverse Drain Current (A) 10 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 100 TJ = 150°C 10 TJ = 25°C 1 VGS = 0V 0.2 0.4 0.6 0.8 1.0 OPERATION IN THIS AREA LIMITED BY R DS (on) 100 100μsec 10 1msec DC 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.1 0.1 1.2 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 VDS= 24V www.irf.com © 2013 International Rectifier 0.1 1 10 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area August 20, 2013 100 IRFH7934PbF 4 VGS(th) Gate threshold Voltage (V) 25 ID , Drain Current (A) 20 15 10 5 2.0 ID = 50μA 1.6 1.2 0 0.8 25 50 75 100 125 150 -75 -50 -25 0 25 50 75 100 125 150 TJ , Temperature ( °C ) TJ , Ambient Temperature (°C) Fig 9. Maximum Drain Current vs. Ambient Temperature Fig 10. Threshold Voltage vs. Temperature 100 Thermal Response ( ZthJC ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 R1 R1 τJ 0.1 τJ τ1 R2 R2 R3 R3 R4 R4 τC τ1 τ2 τ2 τ3 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) τ Ri (°C/W) τι (sec) 6.955975 0.065034 15.08336 5.307554 1.818966 0.00141 16.08526 0.757022 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier August 20, 2013 100 14 ID = 24A 12 10 8 6 TJ = 125°C 4 TJ = 25°C 2 0 2 3 4 5 6 7 8 9 400 EAS, Single Pulse Avalanche Energy (mJ) ( Ω) RDS (on), Drain-to -Source On Resistance m IRFH7934PbF I D 2.5A 3.7A BOTTOM 19A TOP 300 200 100 0 10 25 VGS, Gate-to-Source Voltage (V) 50 75 VDS VGS + V - DD IAS 20V RD D.U.T. RG DRIVER D.U.T RG + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 A 0.01Ω tp Fig 14a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 15a. Switching Time Test Circuit VDS 90% 10% VGS td(on) I AS Fig 14b. Unclamped Inductive Waveforms 6 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V VDS 125 Starting TJ, Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage L 100 tr td(off) tf Fig 15b. Switching Time Waveforms www.irf.com © 2013 International Rectifier August 20, 2013 IRFH7934PbF 6 D.U.T Driver Gate Drive P.W. + - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D= Period + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds Vgs 50KΩ 12V .2μF .3μF D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Qgs1 Qgs2 Qgd Qgodr Current Sampling Resistors Fig 17. Gate Charge Test Circuit 7 www.irf.com © 2013 International Rectifier Fig 18. Gate Charge Waveform August 20, 2013 IRFH7934PbF PQFN 5x6 Option "E" Package Details PQFN Part Marking INTERNATIONAL RECTIFIER LOGO 6 DATE CODE XXXX ASSEMBLY SITE CODE (Per SCOP 200-002) PART NUMBER XYWWX XXXXX MARKING CODE (Per Marking Spec.) PIN 1 IDENTIFIER LOT CODE (Eng Mode - Min. last 4 digits of EATI #) (Prod Mode - 4 digits SPN code) TOP MARKING (LASER) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier August 20, 2013 IRFH7934PbF 8 PQFN Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier August 20, 2013 IRFH7934PbF Qualification information† Cons umer Qualification level (per JE DE C JE S D47F Moisture Sensitivity Level PQFN 5mm x 6mm RoHS compliant †† ††† guidelines ) MS L2 †††† ††† (per JE DE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability †† Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ ††† Applicable version of JEDEC standard at the time of product release. †††† Higher MSL ratings may be available for the specific package types listed here. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.535mH, RG = 25Ω, IAS = 19A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rthjc is guaranteed by design When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Revision History Date 08/06/2013 Comments •Updated the package outline drawing, on page 8. •This drawing change is related to PCN Hana-GTBF-GEM 5x6 PQFN Public. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2013 International Rectifier August 20, 2013