AP9971AGD RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D2 D2 D1 ▼ Fast Switching Speed D1 BVDSS 60V RDS(ON) 50mΩ ID ▼ PDIP-8 Package 5A G2 S2 PDIP-8 G1 S1 Description D2 D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 60 V +25 V 3 5 A 3 3.2 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 20 A PD@TA=25℃ Total Power Dissipation 2 W 0.016 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Linear Derating Factor Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 ℃/W 1 200809222 AP9971AGD Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Min. Typ. 60 - - V VGS=10V, ID=5A - - 50 mΩ VGS=4.5V, ID=2.5A - - 60 mΩ VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=5A - 4.8 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V - - 25 uA Gate-Source Leakage VGS=+25V - - +100 nA ID=5A - 17.5 - nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=48V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 6.3 - nC VDS=30V - 5.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=5A - 12 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 18 - ns tf Fall Time RD=6Ω - 4 - ns Ciss Input Capacitance VGS=0V - 650 1040 pF Coss Output Capacitance VDS=25V - 85 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Min. Typ. IS=1.6A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=5A, VGS=0V, - 27 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 32 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3. Mounted on 1 in2 copper pad of FR4 board ; 90℃/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971AGD 20 20 10V 7.0V 5.0V 4.5V V G =4.0V ID , Drain Current (A) 16 o 16 12 8 4 12 8 4 0 0 0 2 4 6 8 0 2 4 6 8 10 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 2.0 I D =3A I D =5A o T A =25 C V G =10V 60 1.6 Normalized RDS(ON) RDS(ON) (mΩ) 10V 7.0V 5.0V 4.5V V G =4.0V T A =150 C ID , Drain Current (A) o T A =25 C 50 40 1.2 0.8 30 0.4 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 2.6 8 2.2 o o T j =150 C T j =25 C IS (A) VGS(th) (V) 6 4 1.8 1.4 2 1 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 T j ,Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971AGD 14 f=1.0MHz 10000 V DS =30V V DS =36V V DS =48V 10 1000 Ciss C (pF) VGS , Gate to Source Voltage (V) I D =5A 12 8 6 100 Coss Crss 4 2 10 0 0 5 10 15 20 1 25 5 Fig 7. Gate Charge Characteristics 13 17 21 25 29 Fig 8. Typical Capacitance Characteristics 100 100us 1ms 1 10ms 100ms 0.1 1s o T A =25 C Single Pulse Normalized Thermal Response (Rthja) 1 10 ID (A) 9 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Duty foctor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM t 0.01 Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90℃/W DC 0.01 0.001 0.1 1 10 100 0.0001 0.001 0.01 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.1 1 10 100 1000 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : PDIP-8 Millimeters SYMBOLS E A A2 A1 B2 D L B B1 e MIN NOM MAX A 3.60 4.50 5.40 A1 0.38 ---- ---- A2 B B1 B2 C D 2.90 3.95 5.00 0.36 0.46 0.56 1.10 1.45 1.80 0.76 0.98 1.20 0.20 0.28 0.36 9.00 9.60 10.20 E 6.10 6.65 7.20 E1 7.62 7.94 8.26 E2 8.30 9.65 11.00 2.540 BSC e E1 L C 3.18 ---- ---- 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. E2 Part Marking Information & Packing : PDIP-8 9971AGD Part Number Package Code YWWSSS meet Rohs requirement for low voltage MOSFET only Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5