BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G http://onsemi.com Dual General Purpose Transistors SOT−363 CASE 419B STYLE 1 NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. Features (2) Q1 • S and NSV Prefixes for Automotive and Other Applications • (3) Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* Q2 (4) (5) 6 Symbol BC846 BC847 BC848 Unit Collector −Emitter Voltage VCEO 65 45 30 V Collector −Base Voltage VCBO 80 50 30 V Emitter −Base Voltage VEBO 6.0 6.0 5.0 V IC 100 100 100 mAdc Collector Current − Continuous (6) MARKING DIAGRAM MAXIMUM RATINGS Rating (1) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Characteristic Symbol Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate Above 25°C PD Junction and Storage Temperature Range 1 1x x M G = Specific Device Code = B, F, G, L = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient 1x MG G RqJA TJ, Tstg Max Unit 380 250 3.0 mW mW/°C mW/°C °C/W 328 −55 to +150 °C 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 9 1 Publication Order Number: BC846BDW1T1/D BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) BC846, SBC846 Series BC847, SBC847 Series, NSVBC847 BC848 Series V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 10 mA, VEB = 0) BC846, SBC846 Series BC847, SBC847 Series, NSVBC847 BC848 Series V(BR)CES Collector −Base Breakdown Voltage (IC = 10 mA) BC846, SBC846 Series BC847, SBC847 Series, NSVBC847 BC848 Series V(BR)CBO Emitter −Base Breakdown Voltage (IE = 1.0 mA) BC846, SBC846 Series BC847, SBC847 Series, NSVBC847 BC848 Series V(BR)EBO V 65 45 30 − − − − − − V 80 50 30 ICBO − − − V 80 50 30 Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) − − − − − − − − − V 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 nA mA ON CHARACTERISTICS hFE DC Current Gain (IC = 10 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC847B, NSVBC847 BC847C, SBC847C, BC848C (IC = 2.0 mA, VCE = 5.0 V) BC846B, SBC846B, BC847B, SBC847B, NSVBC847 BC847C, SBC847C, BC848C Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) (IC = 100 mA, IB = 5.0 mA) VBE(sat) Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) (IC = 10 mA, VCE = 5.0 V) VBE(on) − − − 150 270 − − 200 420 290 520 450 800 − − − − 0.25 0.6 − − 0.7 0.9 − − 580 − 660 − 700 770 100 − − − − 4.5 − − 10 V V mV SMALL−SIGNAL CHARACTERISTICS fT Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW,f = 1.0 kHz, BW = 200 Hz) NF http://onsemi.com 2 MHz pF dB BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G 600 600 VCE = 10 V 150°C 400 25°C 300 200 −55°C 100 0 0.001 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 500 0.25 0.01 0.1 500 150°C 400 25°C 300 200 −55°C 100 0 0.001 1 Figure 1. DC Current Gain at VCE = 5 V Figure 2. DC Current Gain at VCE = 10 V IC/IB = 10 0.15 150°C 0.10 25°C 0.05 −55°C 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 0.25 IC/IB = 20 0.2 0.15 25°C 0.1 0.05 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) −55°C 150°C −55°C 0 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 4. VCE(sat) at IC/IB = 20 IC/IB = 10 0.90 1 0.3 Figure 3. VCE(sat) at IC/IB = 10 1.00 0.1 IC, COLLECTOR CURRENT (A) 0.20 1.10 0.01 IC, COLLECTOR CURRENT (A) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN VCE = 5 V 1.10 1.00 IC/IB = 20 0.90 0.80 0.70 −55°C 25°C 0.60 0.50 0.40 150°C 0.30 0.20 0.0001 Figure 5. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 6. VBE(sat) at IC/IB = 20 http://onsemi.com 3 0.1 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC846BDW1T1G, SBC846BDW1T1G 1000 VCE = 5 V 1.10 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.20 1.00 0.90 −55°C 0.80 25°C 0.70 0.60 150°C 0.50 0.40 0.30 0.20 0.0001 0.001 0.01 0.1 1 10 100 Figure 7. VBE(on) at VCE = 5 V Figure 8. Current − Gain − Bandwidth Product 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) Cib C, CAPACITANCE (pF) 10 0.1 IC, COLLECTOR CURRENT (A) TA = 25°C Cob 1 10 100 1.6 TA = 25°C IC = 10 mA IC = 20 mA IC = 50 mA IC = 100 mA 1.2 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 9. Capacitances Figure 10. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.1 100 IC, COLLECTOR CURRENT (A) 10 1 VCE = 10 V TA = 25°C −0.2 VCE = 5 V −0.6 −1 −1.4 qVB, for VBE −1.8 −55°C to 150°C −2.2 −2.6 −3 0.1 1 10 IB, BASE CURRENT (mA) 100 Figure 11. Base−Emitter Temperature Coefficient http://onsemi.com 4 100 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G 400 25°C 300 −55°C 200 100 0.25 0.001 0.01 0.1 25°C 150°C 0.05 −55°C 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 14. VCE at IC/IB = 10 IC/IB = 10 1.00 −55°C 25°C 0.60 150°C 0.20 0.00 0.0001 −55°C 200 100 0.001 0.01 0.1 Figure 13. DC Current Gain at VCE = 10 V 0.10 0.40 25°C 300 Figure 12. DC Current Gain at VCE = 5 V 0.15 0.80 400 IC, COLLECTOR CURRENT (A) 0.20 1.20 150°C 500 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.00 0.0001 VCE = 10 V 0 0.0001 1 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150°C 500 0 0.0001 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) 600 VCE = 5 V VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 0.30 IC/IB = 20 0.25 0.20 0.15 25°C 0.10 0.05 150°C −55°C 0.00 0.0001 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 Figure 15. VCE at IC/IB = 20 1.20 IC/IB = 20 1.00 0.80 0.60 0.40 −55°C 25°C 150°C 0.20 0.00 0.0001 Figure 16. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 17. VBE(sat) at IC/IB = 20 http://onsemi.com 5 1 0.1 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC847BDW1T1G, SBC847BDW1T1G, NSVBC847BDW1T2G 1.10 1000 VCE = 5 V 1.00 0.90 −55°C 0.80 0.70 100 25°C 0.60 0.50 150°C 0.40 0.30 0.20 0.0001 VCE = 10 V TA = 25°C fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.20 0.001 0.01 IC, COLLECTOR CURRENT (A) 0.1 10 0.1 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) TA = 25°C C, CAPACITANCE (pF) Cob 1 100 Figure 19. Current − Gain − Bandwidth Product Cib 10 100 1.6 TA = 25°C IC = 10 mA 1.2 IC = 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 20. Capacitances Figure 21. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 1 0.1 10 IC, COLLECTOR CURRENT (A) Figure 18. VBE(on) at VCE = 5 V 10 1 VCE = 5 V −0.2 −0.6 −1 −1.4 qVB, for VBE −55°C to 150°C −1.8 −2.2 −2.6 −3 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 22. Base−Emitter Temperature Coefficient http://onsemi.com 6 100 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC848CDW1T1G, SBC848CDW1T1G 1000 800 700 600 25°C 500 400 −55°C 300 200 100 0.001 0.01 0.1 800 700 25°C 600 500 400 −55°C 300 200 0 0.0001 1 0.001 Figure 23. DC Current Gain at VCE = 5 V Figure 24. DC Current Gain at VCE = 10 V IC/IB = 10 0.14 0.12 0.10 150°C 0.08 25°C 0.06 0.04 −55°C 0.02 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) 0.30 0.25 0.20 0.15 25°C 0.10 0.05 VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) VBE(sat), BASE−EMITT SATURATION VOLTAGE (V) 0.9 0.7 −55°C 25°C 0.6 0.5 0.4 150°C 0.3 0.2 0.0001 0.001 0.01 150°C −55°C 0.00 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 26. VCE at IC/IB = 20 IC/IB = 10 0.8 1 IC/IB = 20 Figure 25. VCE at IC/IB = 10 1.0 0.1 IC, COLLECTOR CURRENT (A) 0.16 1.1 0.01 IC, COLLECTOR CURRENT (A) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) VCE(sat), COLL−EMITT SATURATION VOLTAGE (V) 0.18 VCE = 10 V 100 0 0.0001 0.20 150°C 900 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 1000 VCE = 5 V 150°C 900 0.1 IC, COLLECTOR CURRENT (A) 1.2 IC/IB = 20 1.0 0.8 −55°C 25°C 0.6 0.4 150°C 0.2 0.0 0.0001 Figure 27. VBE(sat) at IC/IB = 10 0.001 0.01 IC, COLLECTOR CURRENT (A) Figure 28. VBE(sat) at IC/IB = 20 http://onsemi.com 7 0.1 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G TYPICAL CHARACTERISTICS − BC848CDW1T1G, SBC848CDW1T1G 1000 VCE = 5 V 0.9 fT, CURRENT−GAIN − BANDWIDTH PRODUCT VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 −55°C 0.8 25°C 0.7 0.6 0.5 0.4 150°C 0.3 0.2 0.1 0.0 0.0001 0.001 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) Figure 30. Current − Gain − Bandwidth Product 2 VCE, COLLECTOR−EMITTER VOLTAGE (V) Cib C, CAPACITANCE (pF) 10 0.1 IC, COLLECTOR CURRENT (A) TA = 25°C Cob 1 10 100 IC = 1.6 10 mA TA = 25°C IC = 20 mA 1.2 IC = 50 mA IC = 100 mA 0.8 0.4 0 0.01 0.1 1 10 VR, REVERSE VOLTAGE (V) IB, BASE CURRENT (mA) Figure 31. Capacitances Figure 32. Collector Saturation Region qVB, TEMPERATURE COEFFICIENT (mV/°C) 0.1 100 Figure 29. VBE(on) at VCE = 5 V 10 1 VCE = 10 V TA = 25°C VCE = 5 V −0.2 −0.6 −1 −1.4 −1.8 qVB, for VBE −55°C to 150°C −2.2 −2.6 −3 0.1 1 10 IB, BASE CURRENT (mA) 100 Figure 33. Base−Emitter Temperature Coefficient http://onsemi.com 8 100 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZqJA(t) = r(t) RqJA RqJA = 3285C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 1.0 10 100 t, TIME (ms) 1.0k 10k 100k 1.0M Figure 34. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 35 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. T J(pk) may be calculated from the data in Figure 34. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. -200 IC, COLLECTOR CURRENT (mA) 1s 3 ms -100 -50 -10 -5.0 -2.0 -1.0 TA = 25°C TJ = 25°C BC558 BC557 BC556 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT -5.0 -10 -30 -45 -65 -100 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 35. Active Region Safe Operating Area http://onsemi.com 9 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G ORDERING INFORMATION Markings Package Shipping† BC846BDW1T1G 1B SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC846BDW1T1G* 1B SOT−363 (Pb−Free) 3,000 / Tape & Reel BC847BDW1T1G 1F SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC847BDW1T1G* 1F SOT−363 (Pb−Free) 3,000 / Tape & Reel BC847BDW1T3G 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel SBC847BDW1T3G* 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel NSVBC847BDW1T2G* 1F SOT−363 (Pb−Free) 10,000 / Tape & Reel BC847CDW1T1G 1G SOT−363 (Pb−Free) 3,000 / Tape & Reel SBC847CDW1T1G* 1G SOT−363 (Pb−Free) 3,000 / Tape & Reel BC848CDW1T1G 1L SOT−363 (Pb−Free) 3,000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 10 BC846BDW1T1G, SBC846BDW1T1G, BC847BDW1T1G, SBC847BDW1T1G Series, NSVBC847BDW1T2G, BC848CDW1T1G PACKAGE DIMENSIONS SC−88 (SC70−6/SOT−363) CASE 419B−02 ISSUE W D e 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. 4 HE −E− 1 2 3 b 6 PL 0.2 (0.008) M E M A3 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 C A A1 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 DIM A A1 A3 b C D E e L HE L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC846BDW1T1/D