AP72T02GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low On-resistance
▼ Fast Switching Characteristic
25V
RDS(ON)
9mΩ
ID
G
▼ RoHS Compliant
BVDSS
62A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP72T02GJ)
are available for low-profile applications.
G
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
25
V
VGS
Gate-Source Voltage
+ 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
62
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
44
A
190
A
60
W
0.4
W/℃
29
mJ
24
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
3
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
Rthj-c
.
Maximum Thermal Resistance, Junction-case
4
Value
Units
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
200812318
AP72T02GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
VGS=0V, ID=250uA
Min.
Typ.
Max. Units
25
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.02
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
8
9
mΩ
VGS=4.5V, ID=15A
-
11
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
42
-
S
IDSS
Drain-Source Leakage Current
VDS=25V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=20V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=30A
-
13
21
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=20V
-
2.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
80
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
22
-
ns
tf
Fall Time
RD=0.5Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
930
1490
pF
Coss
Output Capacitance
VDS=25V
-
250
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.1
1.7
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.3
V
IS=15A, VGS=0V,
-
26
-
ns
dI/dt=100A/µs
-
15
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
3.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=24A.
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP72T02GH/J-HF
120
180
10V
7.0V
ID , Drain Current (A)
10V
7.0V
o
T C =175 C
ID , Drain Current (A)
o
T C =25 C
120
5.0V
4.5V
60
5.0V
80
4.5V
40
V G =3.0V
V G =3.0V
0
0
0
2
4
6
8
0
2
4
6
8
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
35
1.8
I D =15A
I D =30A
V G =10V
Normalized RDS(ON)
T C =25 o C
RDS(ON) (mΩ)
25
15
5
1.4
1
0.6
2
4
6
8
10
-50
0
50
100
150
200
o
T j , Junction Temperature ( C)
VGS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
Normalized VGS(th) (V)
30
20
IS(A)
T j =175 o C
T j =25 o C
10
1.2
0.6
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP72T02GH/J-HF
f=1.0MHz
12
10000
9
V DS =10V
V DS =15V
V DS =20V
C (pF)
VGS , Gate to Source Voltage (V)
I D =30A
6
1000
C iss
3
C oss
C rss
100
0
0
10
20
1
30
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (R thjc)
1
ID (A)
100
100us
10
1ms
10ms
100ms
1s
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig10. Effective Transient Thermal Impedance
40
120
T j =25 o C
80
2.8V 3V
30
T j =175 o C
RDS(ON) (mΩ )
ID , Drain Current (A)
V DS =5V
3.2V
3.5V
4.2V
3.8V
20
4.5V
40
10V
10
0
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
0
20
40
60
80
100
I D (A)
Fig 12. Drain-Source On Resistance
4