Hanbit HMN28D-70I Non-volatile sram module 16kbit (2k x 8-bit), 24pin dip, 5v Datasheet

HANBit
HMN28D
Non-Volatile SRAM MODULE 16Kbit (2K x 8-Bit), 24pin DIP, 5V
Part No. HMN28D
GENERAL DESCRIPTION
The HMN28D are 16,384-bit, fully static, nonvolatile SRAM’s organized as 2,048 bytes by 8 bits. Each NVSRAM has a
self-contained lithium energy source and control circuitry, which constantly monitors Vcc for an out-of-tolerance condition.
When such a condition occurs, the lithium energy source is automatically switched on and writes protection is
unconditionally enabled to prevent data corruption. The HMN28D devices can be used in place of existing 2K x 8 SRAM’s
directly conforming to the popular byte wide 24-pin DIP standard. There is no limit on the number of write cycles that can
be executed and no additional support circuitry is required for microprocessor interfacing.
The HMN28D uses extremely low standby current CMOS SRAM’s, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EEPROM.
FEATURES
w Access time : 70, 85, 120 and 150ns
PIN ASSIGNMENT
w High-density design : 2KByte Design
w Battery internally isolated until power is applied
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
Vss
w JEDEC standard 24-pin DIP Package
w Low-power CMOS
w Unlimited writes cycles
w Data retention in the absence of VCC
w 10-years minimum data retention in absence of power
w Automatic write-protection during power-up/power-down
cycles
w Data is automatically protected during power loss
w Conventional SRAM operation; unlimited write cycles
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
Vcc
A8
A9
/WE
/OE
A10
/CE
DQ7
DQ6
DQ5
DQ4
DQ3
24-pin Encapsulated package
OPTIONS
MARKING
w Timing
70 ns
-70
85 ns
-85
120 ns
-120
150 ns
-150
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Rev. 0.0 (April, 2002)
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HANBit Electronics Co.,Ltd
HANBit
HMN28D
FUNCTIONAL DESCRIPTION
The HMN28D executes a read cycle whenever /WE is inactive(high) and /CE is active(low). The address specified by the
address inputs(A0-A10) defines which of the 2,048 bytes of data is accessed. Valid data will be available to the eight data
output drivers within tACC (access time) after the last address input signal is stable.
When power is valid, the HMN28D operates as a standard CMOS SRAM. During power-down and power-up cycles, the
HMN28D acts as a nonvolatile memory, automatically protecting and preserving the memory contents.
The HMN28D is in the write mode whenever the /WE and /CE signals are in the active (low) state after address inputs are
stable. The later occurring falling edge of /CE or /WE will determine the start of the write cycle. The write cycle is
terminated by the earlier rising edge of /CE or /WE. All address inputs must be kept valid throughout the write cycle. /WE
must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The /OE control
signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus been enabled
(/CE and /OE active) then /WE will disable the outputs in tODW from its falling edge.
The HMN28D provides full functional capability for VCC greater than 4.5 V and write protects by 4.37 V nominal. Powerdown/power-up control circuitry constantly monitors the VCC supply for a power-fail-detect threshold VPFD . When VCC falls
below the VPFD threshold, the SRAM automatically write-protects the data. All inputs to the RAM become “don’t care” and
all outputs are high impedance. As VCC falls below approximately 3 V, the power switching circuit connects the lithium
energy soure to RAM to retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching
circuit connects external VCC to the RAM and disconnects the lithium energy source. Normal RAM operation can resume
after VCC exceeds 4.5 volts.
BLOCK DIAGRAM
/OE
PIN DESCRIPTION
/WE
Power
A0-A10 : Address Input
A0-A10
2K x 8
SRAM
Block
/CE : Chip Enable
DQ0-DQ7
VSS : Ground
DQ0-DQ7 : Data In / Data Out
/CE CON
/WE : Write Enable
/CE
Power – Fail
Control
VCC
/OE : Output Enable
VCC: Power (+5V)
Lithium
Cell
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Rev. 0.0 (April, 2002)
NC : No Connection
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HANBit Electronics Co.,Ltd
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HMN28D
TRUTH TABLE
MODE
/OE
/CE
/WE
I/O OPERATION
POWER
Not selected
X
H
X
High Z
Standby
Output disable
H
L
H
High Z
Active
Read
L
L
H
DOUT
Active
Write
X
L
L
DIN
Active
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATING
DC voltage applied on VCC relative to VSS
VCC
-0.3V to 7.0V
VT
-0.3V to 7.0V
Operating temperature
TOPR
0 to 70°C
Storage temperature
TSTG
-40°C to 70°C
Temperature under bias
TBIAS
-10°C to 70°C
Soldering temperature
TSOLDER
260°C
DC Voltage applied on any pin excluding VCC
relative to VSS
CONDITIONS
VT≤ VCC+0.3
For 10 second
NOTE: Permanent device damage may occur if Absolute Maximum Ratings are exceeded.
Functional operation should be restricted to the Recommended DC Operating Conditions detailed in this data sheet.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA= TOPR )
PARAMETER
SYMBOL
MIN
TYPICAL
MAX
Supply Voltage
VCC
4.5V
5.0V
5.5V
Ground
VSS
0
0
0
Input high voltage
VIH
2.2
-
VCC+0.3V
Input low voltage
VIL
-0.3
-
0.8V
NOTE: Typical values indicate operation at TA = 25℃
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HANBit Electronics Co.,Ltd
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HMN28D
DC ELECTRICAL CHARACTERISTICS (TA= TOPR, VCCmin £ VCC≤ VCCmax )
PARAMETER
Input Leakage Current
Output Leakage Current
CONDITIONS
SYMBOL
MIN
TYP.
MAX
UNIT
VIN=VSS to VCC
ILI
-
-
± 1
mA
ILO
-
-
± 1
mA
/CE=VIH or /OE=VIH
Or /WE=VIL
Output high voltage
IOH=-1.0mA
VOH
2.4
-
-
V
Output low voltage
IOL= 2.1mA
VOL
-
-
0.4
V
Standby supply current
/CE=VIH
ISB
-
4
2
㎃
ISB1
-
2.5
100
mA
ICC
-
65
15
㎃
Power-fail-detect voltage
VPFD
4.30
4.37
4.50
V
Supply switch-over voltage
VSO
-
3
-
V
/CE≥ VCC-0.2V,
Standby supply current
0V≤ VIN≤ 0.2V,
or VIN≥ VCC-0.2V
Operating supply current
Min.cycle,duty=100%,
/CE=VIL, II/O=0㎃
CAPACITANCE (TA=25℃ , f=1MHz, VCC=5.0V)
DESCRIPTION
CONDITIONS
SYMBOL
MAX
MIN
UNIT
Input Capacitance
Input voltage = 0V
CIN
10
-
pF
Input/Output Capacitance
Output voltage = 0V
CI/O
10
-
pF
CHARACTERISTICS (Test Conditions)
PARAMETER
VALUE
Input pulse levels
0 to 3V
Input rise and fall times
5 ns
Input and output timing
1.5V
reference levels
(unless otherwise specified)
Output load
(including scope and jig)
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Rev. 0.0 (April, 2002)
+5V
1.9KΩ
DOUT
1KΩ
Figure 1.
Output Load A
See Figures 1and 2
4
+5V
1.9KΩ
DOUT
100㎊
1KΩ
5㎊
Figure 2.
Output Load B
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HANBit
HMN28D
READ CYCLE (TA= TOPR, VCCmin £ VCC≤ VCCmax )
PARAMETER
SYMBOL
-70
CONDITIONS
-85
-120
-150
UNIT
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAX
70
-
85
-
120
-
150
-
ns
Read Cycle Time
tRC
Address Access Time
tACC
Output load A
-
70
-
85
-
120
-
150
ns
Chip enable access time
tACE
Output load A
-
70
-
85
-
120
-
150
ns
Output enable to Output valid
tOE
Output load A
-
35
-
45
-
60
-
70
ns
Chip enable to output in low Z
tCLZ
Output load B
5
-
5
-
5
-
10
-
ns
Output enable to output in low Z
tOLZ
Output load B
5
-
0
-
0
-
5
-
ns
Chip disable to output in high Z
tCHZ
Output load B
0
25
0
35
0
45
0
60
ns
Output disable to output high Z
tOHZ
Output load B
0
25
0
25
0
35
0
50
ns
Output hold from address change
tOH
Output load A
10
-
10
-
10
-
10
-
ns
WRITE CYCLE (TA= TOPR, Vccmin £ Vcc ≤ Vccmax )
PARAMETER
SYMBOL
-70
CONDITIONS
-85
-120
-150
UNI
MIN
MAX
MIN
MAX
MIN
MAX
Min
Max
T
70
-
85
-
120
-
150
-
ns
Write Cycle Time
tWC
Chip enable to end of write
tCW
Note 1
65
-
75
-
100
-
100
-
ns
Address setup time
tAS
Note 2
0
-
0
-
0
-
0
-
ns
Address valid to end of write
tAW
Note 1
65
-
75
-
100
-
90
-
ns
Write pulse width
tWP
Note 1
55
-
65
-
85
-
90
-
ns
Write recovery time (write cycle 1)
tWR1
Note 3
5
-
5
-
5
-
5
-
ns
Write recovery time (write cycle 2)
tWR2
Note 3
15
-
15
-
15
-
15
-
ns
Data valid to end of write
tDW
30
-
35
-
45
-
50
-
ns
Data hold time (write cycle 1)
tDH1
Note 4
0
-
0
-
0
-
0
-
ns
Data hold time (write cycle 2)
tDH2
Note 4
10
-
10
-
10
-
0
-
ns
Write enabled to output in high Z
tWZ
Note 5
0
25
0
30
0
40
0
50
ns
Output active from end of write
tOW
Note 5
5
-
0
-
0
-
5
-
ns
NOTE: 1. A write ends at the earlier transition of /CE going high and /WE going high.
2. A write occurs during the overlap of allow /CE and a low /WE. A write begins at the later transition of /CE
going low and /WE going low.
3. Either tWR1 or tWR2 must be met.
4. Either tDH1 or tDH2 must be met.
5. If /CE goes low simultaneously with /WE going low or after /WE going low, the outputs remain in highimpedance state.
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HMN28D
POWER-DOWN/POWER-UP CYCLE (TA= TOPR, VCC=5V)
PARAMETER
SYMBOL
VCC slew, 4.75 to 4.25V
CONDITIONS
tPF
MIN
TYP.
MAX
UNIT
300
-
-
㎲
VCC slew, 4.75 to VSO
tFS
10
-
-
㎲
VCC slew, VSO to VPFD (max)
tPU
0
-
-
㎲
Chip enable recovery time
tCER
40
80
120
ms
10
-
-
years
6
-
-
years
40
100
150
㎲
Time during which SRAM
is write-protected after VCC
passes VPFD on power-up.
Data-retention time in
TA = 25℃
tDR
Absence of VCC
Data-retention time in
TA = 25℃ ; industrial
tDR-N
Absence of VCC
temperature range (-N) only
Delay after VCC slews down
Write-protect time
tWPT
past VPFD before SRAM is
Write-protected.
TIMING WAVEFORM
- READ CYCLE NO.1 (Address Access)*1,2
tRC
Address
tACC
tOH
Previous Data Valid
DOUT
Data Valid
- READ CYCLE NO.2 (/CE Access)*1,3,4
tRC
/CE
tACE
tCHZ
tCLZ
DOUT
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Rev. 0.0 (April, 2002)
High-Z
High-Z
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HMN28D
- READ CYCLE NO.3 (/OE Access)*1,5
tRC
Address
tACC
/OE
tOE
DOUT
tOHZ
tOLZ
Data Valid
High-Z
High-Z
NOTES: 1. /WE is held high for a read cycle.
2. Device is continuously selected: /CE = /OE =VIL.
3. Address is valid prior to or coincident with /CE transition low.
4. /OE = VIL.
5. Device is continuously selected: /CE = VIL
- WRITE CYCLE NO.1 (/WE-Controlled)*1,2,3
tWC
Address
tAW
tWR1
tCW
/CE
tAS
tWP
/WE
tDW
DIN
Data-in Valid
tWZ
DOUT
Rev. 0.0 (April, 2002)
tOW
High-Z
Data Undefined (1)
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tDH1
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HMN28D
- WRITE CYCLE NO.2 (/CE-Controlled)*1,2,3,4,5
tWC
Address
tAW
tAS
tWR2
tCW
/CE
tWP
/WE
tDH2
tDW
Data-in Valid
DIN
tWZ
DOUT
High-Z
Data Undefined (2)
NOTE: 1. /CE or /WE must be high during address transition.
2. Because I/O may be active (/OE low) during this period, data input signals of opposite
polarity to the outputs must not be applied.
3. If /OE is high, the I/O pins remain in a state of high impedance.
4. Either tWR1 or tWR2 must be met.
5. Either tDH1 or tDH2 must be met.
- POWER-DOWN/POWER-UP TIMING
tPF
VCC
4.75
VPFD
VPFD
4.25
VSO
VSO
tFS
tWPT
tPU
tCER
tDR
/CE
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HMN28D
PACKAGE DIMENSIONS
Dimension
Min
Max
A
1.320
1.340
B
0.695
0.720
C
0.390
0.415
D
0.100
0.130
E
0.017
0.030
F
0.120
0.160
G
0.090
0.110
H
0.590
0.630
J
0.008
0.012
K
0.015
0.021
F
A
D
G
K
B
C
E
All dimensions are in inches.
J
H
B
ORDERING INFORMATION
H M N 2 8 D - 70 I
Operating Temp. : Blank = Commercial (0 to 70 °C )
I = Industrial (-40 to 85°C)
Speed options : 70 = 70 ns
100 = 100 ns
120 = 120 ns
150 = 150 ns
200 = 200 ns
Device : 2K x 8 bit
Dip type package
Nonvolatile SRAM
HANBit Memory Module
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Rev. 0.0 (April, 2002)
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