TI CD74HCT368 High-speed cmos logic hex buffer/line driver, three-state non-inverting and inverting Datasheet

[ /Title
(CD74
HC367
,
CD74
HCT36
7,
CD74
HC368
,
CD74
HCT36
8)
/Subject
(High
Speed
CD54/74HC367, CD54/74HCT367,
CD54/74HC368, CD74HCT368
Data sheet acquired from Harris Semiconductor
SCHS181D
November 1997 - Revised October 2003
High-Speed CMOS Logic Hex Buffer/Line Driver,
Three-State Non-Inverting and Inverting
Features
Ordering Information
• Buffered Inputs
PART NUMBER
• High Current Bus Driver Outputs
TEMP. RANGE
(oC)
PACKAGE
CD54HC367F3A
-55 to 125
16 Ld CERDIP
• Two Independent Three-State Enable Controls
CD54HC368F3A
-55 to 125
16 Ld CERDIP
• Typical Propagation Delay tPLH, tPHL = 8ns at VCC = 5V,
CL = 15pF, TA = 25oC
CD54HCT367F3A
-55 to 125
16 Ld CERDIP
CD74HC367E
-55 to 125
16 Ld PDIP
• Fanout (Over Temperature Range)
- Standard Outputs . . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
CD74HC367M
-55 to 125
16 Ld SOIC
CD74HC367MT
-55 to 125
16 Ld SOIC
CD74HC367M96
-55 to 125
16 Ld SOIC
• Wide Operating Temperature Range . . . -55oC to 125oC
CD74HC368E
-55 to 125
16 Ld PDIP
CD74HC368M
-55 to 125
16 Ld SOIC
CD74HC368MT
-55 to 125
16 Ld SOIC
• Significant Power Reduction Compared to LSTTL
Logic ICs
CD74HC368M96
-55 to 125
16 Ld SOIC
CD74HCT367E
-55 to 125
16 Ld PDIP
• HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
CD74HCT367M
-55 to 125
16 Ld SOIC
CD74HCT367MT
-55 to 125
16 Ld SOIC
CD74HCT367M96
-55 to 125
16 Ld SOIC
CD74HCT368E
-55 to 125
16 Ld PDIP
• HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il ≤ 1µA at VOL, VOH
CD74HCT368M
-55 to 125
16 Ld SOIC
CD74HCT368MT
-55 to 125
16 Ld SOIC
CD74HCT368M96
-55 to 125
16 Ld SOIC
• Balanced Propagation Delay and Transition Times
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
Description
The ’HC367, ’HCT367, ’HC368, and CD74HCT368 silicon gate
CMOS three-state buffers are general purpose high-speed
non-inverting and inverting buffers. They have high drive current outputs which enable high speed operation even when
driving large bus capacitances. These circuits possess the low
power dissipation of CMOS circuitry, yet have speeds comparable to low power Schottky TTL circuits. Both circuits are capable
of driving up to 15 low power Schottky inputs.
The ’HC367 and ’HCT367 are non-inverting buffers, whereas
the ’HC368 and CD74HCT368 are inverting buffers. These
devices have two output enables, one enable (OE1) controls 4
gates and the other (OE2) controls the remaining 2 gates.
The ’HCT367 and CD74HCT368 logic families are speed, function and pin compatible with the standard LS logic family.
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright
© 2003, Texas Instruments Incorporated
1
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Pinouts
CD54HC367, CD54HCT367
(CERDIP)
CD74HC367, CD74HCT367
(PDIP, SOIC)
TOP VIEW
CD54HC368
(CERDIP)
CD74HC368, CD74HCT368
(PDIP, SOIC)
TOP VIEW
OE1 1
16 VCC
OE1 1
16 VCC
1A 2
15 OE2
1A 2
15 OE2
1Y 3
14 6A
1Y 3
14 6A
2A 4
13 6Y
2A 4
13 6Y
2Y 5
12 5A
2Y 5
12 5A
3A 6
11 5Y
3A 6
11 5Y
3Y 7
10 4A
3Y 7
10 4A
GND 8
9 4Y
GND 8
9 4Y
Functional Diagrams
HC367, HCT367
OE1
1A
1Y
2A
2Y
HC368, CD74HCT368
1
16
2
15
3
14
4
13
5
12
6
11
3A
3Y
GND
VCC
OE1
OE2
1A
6A
1Y
6Y
2A
5A
2Y
5Y
3A
4A
3Y
4Y
GND
10
7
8
9
1
16
2
15
3
14
4
13
5
12
6
11
7
10
8
9
OUTPUTS
(Y)
OE
A
HC/HCT367
HC/HCT368
L
L
L
H
L
H
H
L
H
X
(Z)
(Z)
H = High Voltage Level
L = Low Voltage Level
X = Don’t Care
Z = High Impedance (OFF) State
2
OE2
6A
6Y
5A
5Y
4A
TRUTH TABLE
INPUTS
VCC
4Y
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Logic Diagram
VCC
16
ONE OF SIX IDENTICAL CIRCUITS
2
1A
3
(NOTE 1)
1Y
GND
8
1
OE1
4
15
5
2A
2Y
OE2
6
7
3A
3Y
10
4A
9
4Y
12
5A
11
5Y
14
6A
13
6Y
NOTE:
1. Inverter not included in HC/HCT367
FIGURE 1. LOGIC DIAGRAM FOR THE HC/HCT367 AND HC/HCT368 (OUTPUTS FOR HC/HCT367 ARE COMPLEMENTS OF
THOSE SHOWN, i.e., 1Y, 2Y, ETC.)
3
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Absolute Maximum Ratings
Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V . . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Thermal Resistance (Typical, Note 2)
θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . .
67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . .
73
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
2. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
TEST
CONDITIONS
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
Low Level Input
Voltage
VIL
High Level Output
Voltage
CMOS Loads
VOH
PARAMETER
25oC
IO (mA) VCC (V)
MIN
TYP
-40oC TO 85oC
MAX
MIN
MAX
-55oC TO 125oC
MIN
MAX
UNITS
HC TYPES
-
VIH or
VIL
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
-
-
2
1.5
-
-
1.5
-
1.5
-
V
4.5
3.15
-
-
3.15
-
3.15
-
V
6
4.2
-
-
4.2
-
4.2
-
V
2
-
-
0.5
-
0.5
-
0.5
V
4.5
-
-
1.35
-
1.35
-
1.35
V
6
-
-
1.8
-
1.8
-
1.8
V
-0.02
2
1.9
-
-
1.9
-
1.9
-
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-0.02
6
5.9
-
-
5.9
-
5.9
-
V
-6
4.5
3.98
-
-
3.84
-
3.7
-
V
-7.8
6
5.48
-
-
5.34
-
5.2
-
V
0.02
2
-
-
0.1
-
0.1
-
0.1
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
0.02
6
-
-
0.1
-
0.1
-
0.1
V
6
4.5
-
-
0.26
-
0.33
-
0.4
V
7.8
6
-
-
0.26
-
0.33
-
0.4
V
II
VCC or
GND
-
6
-
-
±0.1
-
±1
-
±1
µA
Quiescent Device
Current
ICC
VCC or
GND
0
6
-
-
8
-
80
-
160
µA
Three-State Leakage
Current
IOZ
VIL or
VIH
VO =
VCC or
GND
6
-
-
±0.5
-
±5.0
-
±10
µA
Input Leakage
Current
4
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
DC Electrical Specifications
(Continued)
TEST
CONDITIONS
SYMBOL
VI (V)
High Level Input
Voltage
VIH
-
-
Low Level Input
Voltage
VIL
-
High Level Output
Voltage
CMOS Loads
VOH
VIH or
VIL
PARAMETER
25oC
-40oC TO 85oC
-55oC TO 125oC
MIN
TYP
MAX
MIN
MAX
MIN
MAX
UNITS
4.5 to
5.5
2
-
-
2
-
2
-
V
-
4.5 to
5.5
-
-
0.8
-
0.8
-
0.8
V
-0.02
4.5
4.4
-
-
4.4
-
4.4
-
V
-4
4.5
3.98
-
-
3.84
-
3.7
-
V
0.02
4.5
-
-
0.1
-
0.1
-
0.1
V
4
4.5
-
-
0.26
-
0.33
-
0.4
V
IO (mA) VCC (V)
HCT TYPES
High Level Output
Voltage
TTL Loads
Low Level Output
Voltage
CMOS Loads
VOL
VIH or
VIL
Low Level Output
Voltage
TTL Loads
II
VCC to
GND
0
5.5
-
-
±0.1
-
±1
-
±1
µA
ICC
VCC or
GND
0
5.5
-
-
8
-
80
-
160
µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
∆ICC
(Note 3)
VCC
-2.1
-
4.5 to
5.5
-
100
360
-
450
-
490
µA
Three-State Leakage
Current
IOZ
VIL or
VIH
VO =
VCC or
GND
5.5
-
-
±0.5
-
±5.0
-
±10
µA
Input Leakage
Current
Quiescent Device
Current
NOTE:
3. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
HCT Input Loading Table
INPUT
UNIT LOADS
OE1
0.6
All Others
0.55
NOTE: Unit Load is ∆ICC limit specified in DC Electrical
Specifications table, e.g., 360µA max at 25oC.
Switching Specifications
PARAMETER
Input tr, tf = 6ns
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
105
130
160
ns
4.5
-
21
26
32
ns
6
-
18
24
27
ns
5
8
-
-
-
ns
HC TYPES
Propagation Delay,
Data to Outputs
HC/HCT367
CL = 15pF
5
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Switching Specifications
PARAMETER
Propagation Delay,
Data to Outputs
HC/HCT368
Propagation Delay,
Output Enable and Disable
to Outputs
Output Transition Time
Input tr, tf = 6ns (Continued)
SYMBOL
TEST
CONDITIONS
tPLH, tPHL
CL = 50pF
tPLH, tPHL
tTLH, tTHL
25oC
-40oC TO 85oC
-55oC TO
125oC
VCC (V)
TYP
MAX
MAX
MAX
UNITS
2
-
105
130
160
ns
4.5
-
21
26
32
ns
6
-
18
24
27
ns
CL = 15pF
5
9
-
-
-
ns
CL = 50pF
2
-
150
190
225
ns
4.5
-
30
38
45
ns
6
-
26
33
38
ns
CL = 15pF
5
12
-
-
-
ns
CL = 50pF
2
-
60
75
90
ns
4.5
-
12
15
18
ns
6
-
10
13
15
ns
Input Capacitance
CI
-
-
-
10
10
10
pF
Three-State Output
Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 4, 5)
CPD
-
5
40
-
-
-
pF
CL = 50pF
4.5
-
25
31
38
ns
CL = 15pF
5
9
-
-
-
ns
CL = 50pF
4.5
-
30
38
45
ns
CL = 15pF
5
11
-
-
-
ns
CL = 50pF
4.5
-
35
44
53
ns
CL = 15pF
5
14
-
-
-
ns
CL = 50pF
4.5
-
12
15
18
ns
HCT TYPES
Propagation Delay,
Data to Outputs
HC/HCT367
tPLH, tPHL
Propagation Delay,
Data to Outputs
HC/HCT368
tPLH, tPHL
Propagation Delay,
Output Enable and Disable
to Outputs
tPLH, tPHL
Output Transition Time
tTLH, tTHL
Input Capacitance
CIN
-
-
-
10
10
10
pF
Three-State Capacitance
CO
-
-
-
20
20
20
pF
Power Dissipation
Capacitance
(Notes 4, 5)
CPD
-
5
42
-
-
-
pF
NOTES:
4. CPD is used to determine the dynamic power consumption, per buffer.
5. PD = VCC2fi (CPD + CL) where fi = Input Frequency, CL = Output Load Capacitance, VCC = Supply Voltage.
6
CD54/74HC367, CD54/74HCT367, CD54/74HC368, CD74HCT368
Test Circuits and Waveforms
tr = 6ns
tf = 6ns
90%
50%
10%
INPUT
GND
tTLH
tPHL
6ns
10%
2.7
1.3
OUTPUT LOW
TO OFF
90%
OUTPUT HIGH
TO OFF
50%
OUTPUTS
DISABLED
FIGURE 4. HC THREE-STATE PROPAGATION DELAY
WAVEFORM
OTHER
INPUTS
TIED HIGH
OR LOW
OUTPUT
DISABLE
IC WITH
THREESTATE
OUTPUT
GND
1.3V
tPZH
90%
OUTPUTS
ENABLED
OUTPUTS
ENABLED
0.3
10%
tPHZ
tPZH
3V
tPZL
tPLZ
50%
OUTPUTS
ENABLED
6ns
GND
10%
tPHZ
tf
OUTPUT
DISABLE
tPZL
tPLZ
OUTPUT HIGH
TO OFF
6ns
tr
VCC
90%
tPLH
FIGURE 3. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
6ns
OUTPUT LOW
TO OFF
1.3V
10%
INVERTING
OUTPUT
FIGURE 2. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
50%
tTLH
90%
tPLH
tPHL
GND
tTHL
90%
50%
10%
INVERTING
OUTPUT
3V
2.7V
1.3V
0.3V
INPUT
tTHL
OUTPUT
DISABLE
tf = 6ns
tr = 6ns
VCC
1.3V
OUTPUTS
DISABLED
OUTPUTS
ENABLED
FIGURE 5. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
OUTPUT
RL = 1kΩ
CL
50pF
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZH
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL = 1kΩ to
VCC, CL = 50pF.
FIGURE 6. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
7
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