Central CMLD4448 Surface mount dual, isolated high speed silicon switching diode Datasheet

CMLD4448
SURFACE MOUNT
DUAL, ISOLATED
HIGH SPEED SILICON
SWITCHING DIODES
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLD4448
type contains two (2) Isolated Silicon Switching Diodes,
manufactured by the epitaxial planar process,
epoxy molded in a PICOmini™ surface mount package.
These devices are designed for high speed
switching applications.
MARKING CODE: C48
SOT-563 CASE
MAXIMUM RATINGS: (TA=25°C)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
IF
120
V
250
mA
IFRM
IFSM
500
mA
4.0
A
IFSM
PD
1.0
A
250
mW
-65 to +150
°C
500
°C/W
Continuous Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current, tp=1.0μs
Peak Forward Surge Current, tp=1.0s
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
TJ, Tstg
ΘJA
UNITS
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
TYP
MAX
IR
VR=50V
300
IR
UNITS
nA
IR
VR=50V, TA=125°C
VR=100V
BVR
IR=100μA
120
150
VF
IF=1.0mA
0.55
0.59
0.65
V
VF
IF=10mA
0.67
0.72
0.77
V
VF
IF=100mA
0.85
0.91
1.0
V
CT
VR=0, f=1.0MHz
1.5
pF
trr
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
4.0
ns
2.0
100
μA
500
nA
V
R3 (18-January 2010)
CMLD4448
SURFACE MOUNT
DUAL, ISOLATED
HIGH SPEED SILICON
SWITCHING DIODES
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Anode D1
2) NC
3) Anode D2
4) Cathode D2
5) NC
6) Cathode D1
MARKING CODE: C48
R3 (18-January 2010)
w w w. c e n t r a l s e m i . c o m
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