EMH2 / UMH2N / IMH2A Transistors General purpose (dual digital transistors) EMH2 / UMH2N / IMH2A !External dimensions (Units : mm) (3) 0.22 (4) (5) (6) 0.5 0.5 1.0 1.6 EMH2 (2) 1.2 1.6 (1) 0.5 0.13 !Features 1) Two DTC144Es chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. All terminals have same dimensions Abbreviated symbol : H2 ROHM : EMT6 (1) 1.25 The following characteristics apply to both DTr1 and DTr2. ROHM : UMT6 EIAJ : SC-88 IMH2A 1.3 0.9 All terminals have same dimensions Abbreviated symbol : H2 (4) (5) (6) R1 R2 (1) (2) (5) 0.3 (1) R1=47kΩ R2=47kΩ (3) R1=47kΩ R2=47kΩ R2 R1 (3) (2) (4) (6) 0.95 0.95 1.9 2.9 IMH2A DTr1 DTr2 (6) DTr1 R2 R1 (4) (5) 0to0.1 0.1Min. (3) (2) (1) R1 R 2 DTr2 0.7 0.15 2.1 !Equivalent circuit EMH2 / UMH2N 2.0 (3) (2) (4) (6) (5) 0.2 0.65 UMH2N 0.65 !Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type) 1.6 Package Type 0.3to0.6 0to0.1 !Packaging specifications All terminals have same dimensions Taping Code T2R TN T110 Basic ordering unit (pieces) 8000 3000 3000 − − EMH2 UMH2N − IMH2A − − − ROHM : SMT6 EIAJ : SC-74 1.1 0.8 0.15 2.8 Abbreviated symbol : H2 EMH2 / UMH2N / IMH2A Transistors !Absolute maximum ratings (Ta = 25°C) Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN Parameter IO 30 IC(Max.) 100 Output current EMH2,UMH2N Power dissipation 40 V −10 mA 150 (TOTAL) Pd IMH2A ∗1 mW ∗2 300 (TOTAL) Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. !Electrical characteristics (Ta = 25°C) Parameter Symbol Input voltage Output voltage Typ. Max. Unit Conditions VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.18 mA IO(off) − − 0.5 µA VCC=50V, VI=0V GI 68 − − − VO=5V, IO=5mA Input current Output current Min. DC current gain VCC=5V, IO=100µA V VO=0.3V, IO=2mA IO/II=10mA/0.5mA VI=5V Transition frequency fT − 250 − MHZ Input resistance R1 32.9 47 61.1 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − ∗ VCE=10mA, IE=−5mA, f=100MHz ∗ Transition frequency of the device !Electrical characteristic curves 10m VO=0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 20 10 5 Ta=−40°C 25°C 100°C 2 1 500m Ta=100°C 25°C 1m −40°C 500µ 200µ 100µ 50µ 20µ 10µ 2µ 1µ 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 200 100 Ta=100°C 25°C −40°C 50 20 10 5 5µ 100m 100µ 200µ 2m VO=5V 500 2m 200m 500µ 1m 1k VCC=5V 5m 50 DC CURRENT GAIN : GI 100 2 0 0.5 1.0 1.5 2.0 2.5 INPUT VOLTAGE : VI (off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 3.0 1 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current EMH2 / UMH2N / IMH2A Transistors 1 lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m 100m Ta=100°C 25°C −40°C 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ1m 2m 5m 10m 20m 50m100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current