Transistors SMD Type NPN High-Voltage Transistors BST39; BST40 Features Low current (max. 50 mA) High voltage (max. 300 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol collector-base voltage BST39 (open emitte) BST40 collector-emitter voltage BST39 (open-base ) BST40 VCBO Rating Unit 400 V 300 V 350 V 250 V VEBO 5 V collector current (DC) IC 100 mA peak collector current ICM 200 mA peak base current IBM 100 mA W emitter-base voltage (open collector) VCEO Ptot 1.3 storage temperature Tstg -65 to150 junction temperature Tj 150 operating ambient temperature Tamb -65 to150 thermal resistance from junction to ambient * Rth j-a 96 K/W thermal resistance from junction to soldering point Rth j-s 16 K/W total power dissipation Tamb 25 * * Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. www.kexin.com.cn 1 Transistors SMD Type BST39; BST40 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit collector cut-off current ICBO IE = 0; VCB = 300 V 20 nA emitter cut-off current IEBO IC = 0; VEB = 5 V 100 nA DC current gain hFE IC = 20 mA; VCE = 10 V 40 IC = 50 mA; IB = 4 mA 500 mV 2 pF collector-emitter saturation voltage VCEsat collector capacitance Cc IE = ie = 0; VCB = 10 V; f = 1 MHz transition frequency fT IC = 10 mA; VCE = 10 V; f = 100 MHz Marking 2 unless otherwise specified. Type Number BST39 BST40 Marking AT1 AT2 www.kexin.com.cn 70 MHz