MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE FK16VS-5 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 0 –0 (1.5) 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS ................................................................................ 250V ¡rDS (ON) (MAX) .............................................................. 0.31Ω ¡ID ......................................................................................... 16A ¡Integrated Fast Recovery Diode (MAX.) ........150ns 2.6 ± 0.4 4.5 0.8 q GATE w DRAIN e SOURCE r DRAIN q e TO-220S APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol (Tc = 25°C) Parameter VDSS VGSS ID IDM IS Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current ISM PD Tch Source current (Pulsed) Maximum power dissipation Channel temperature Tstg — Storage temperature Weight Conditions VGS = 0V VDS = 0V Typical value Ratings Unit 250 V ±30 16 48 V A A 16 48 125 –55 ~ +150 –55 ~ +150 A A W °C °C 1.2 g Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS (Tch = 25°C) Symbol Parameter V (BR) DSS Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 250V, VGS = 0V Gate-source threshold voltage Drain-source on-state resistance ID = 1mA, VDS = 10V ID = 8A, VGS = 10V ID = 8A, VGS = 10V ID = 8A, VDS = 10V V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Drain-source on-state voltage Forward transfer admittance Input capacitance Coss Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Limits Test conditions Turn-off delay time Fall time Source-drain voltage VDS = 25V, VGS = 0V, f = 1MHz VDD = 150V, ID = 8A, VGS = 10V, RGEN = RGS = 50Ω IS = 8A, VGS = 0V Channel to case Thermal resistance Reverse recovery time IS = 16A, dis/dt = –100A/µs Unit Min. Typ. Max. 250 ±30 — — — — — — ±10 V V µA — 2 — — — 3 0.24 1.92 1 4 0.31 2.48 mA V Ω V 6.5 — — — 10.0 1050 220 45 — — — — S pF pF pF — — — — 20 40 110 50 — — — — ns ns ns ns — 1.5 2.0 V — — — — 1.00 150 °C/W ns PERFORMANCE CURVES 160 120 80 40 0 MAXIMUM SAFE OPERATING AREA DRAIN CURRENT ID (A) POWER DISSIPATION PD (W) POWER DISSIPATION DERATING CURVE 200 0 50 100 150 CASE TEMPERATURE TC (°C) 200 102 7 5 3 2 tw=10µs 101 7 5 3 2 1ms 100 7 5 3 2 100µs 10ms TC = 25°C Single Pulse DC 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 20 PD = 125W 50 40 TC = 25°C Pulse Test VGS = 20V 10V 6V DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) PD = 125W 7V 30 6V 20 5V 10 0 0 10 20 30 40 4 4.5V 0 4 8 12 16 20 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 0.5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) 5V ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 16 12 ID = 30A 8 16A 4 8A 0 4 8 12 16 VGS = 10V 0.4 20V 0.3 0.2 0.1 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) TRANSFER CHARACTERISTICS (TYPICAL) FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 101 7 5 32 FORWARD TRANSFER ADMITTANCE yfs (S) TC = 25°C VDS = 50V Pulse Test 24 16 8 0 TC = 25°C Pulse Test 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 20 40 DRAIN CURRENT ID (A) 8 DRAIN-SOURCE VOLTAGE VDS (V) TC = 25°C Pulse Test 0 5.5V 12 DRAIN-SOURCE VOLTAGE VDS (V) 20 0 16 0 50 TC = 25°C Pulse Test 4 8 12 16 20 GATE-SOURCE VOLTAGE VGS (V) TC = 25°C 75°C 3 2 125°C 100 7 5 3 2 10–1 100 VDS = 10V Pulse Test 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-5 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 5 Ciss 102 7 5 3 2 Coss 101 7 5 DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) td(off) 102 7 5 tf 3 2 tr td(on) 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 40 16 SOURCE CURRENT IS (A) Tch = 25°C ID = 16A VDS = 50V 100V 12 200V 8 4 0 101 7 5 20 40 60 80 VGS = 0V Pulse Test TC = 125°C 32 75°C 24 25°C 16 8 0 100 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 VGS = 10V ID = 1/2ID Pulse Test 3 2 100 7 5 3 2 10–1 3 2 DRAIN-SOURCE VOLTAGE VDS (V) 20 0 Tch = 25°C VDD = 150V VGS = 10V RGEN = RGS = 25Ω 101 100 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) GATE-SOURCE VOLTAGE VGS (V) Crss 3 Tch = 25°C 2 f = 1MHz VGS = 0V 100 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 SWITCHING TIME (ns) CAPACITANCE Ciss, Coss, Crss (pF) 3 2 0 50 100 150 200 250 CHANNEL TEMPERATURE Tch (°C) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK16VS-5 VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) trr 101 7 5 3 2 Irr 101 7 5 3 2 100 101 Tch = 25°C Tch = 150°C 2 3 5 7 102 2 3 100 7 5 3 2 10–1 5 7 103 SOURCE CURRENT dis/dt (–A/µs) 102 7 5 101 7 5 trr 3 2 Irr 101 0 10 2 3 5 7 101 3 Tch = 25°C 2 Tch = 150°C 100 2 3 5 7 102 SOURCE CURRENT IS (A) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 102 103 IS = 16A 7 7 5 5 VGS = 0V 3 VDD = 150V 3 2 2 102 7 5 3 2 DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 150V 3 3 2 2 REVERSE RECOVERY CURRENT Irr (A) 1.4 REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) REVERSE RECOVERY CURRENT Irr (A) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) REVERSE RECOVERY TIME trr (ns) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) HIGH-SPEED SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 D=1 0.5 0.2 0.1 PDM tw 0.05 0.02 0.01 T D= tw T Single Pulse 10–2 –4 –3 10 2 3 5710 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s) Feb.1999