AWG3015 AWG3015 Data Sheet 50 ~ 4000 MHz Wide-band Gain Block Amplifier MMIC 1. Product Overview 1.1 General Description AWG3015, a gain block amplifier MMIC, has high linearity, low noise and high efficiency over a wide range of frequency from 30 MHz to 4000 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 4 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOT89 package and passes through the stringent DC, RF, and reliability tests. Features Gain & Return Loss vs. Frequency(with BiasTees) 14.9 dB gain at 2000 MHz 30 20.5 dBm P1dB at 2000 MHz 20 39.0 dBm OIP3 at 2000 MHz 39.5 dBm OIP3 at 2700 MHz: Application 6.1 Gain flatness = 0.6 dB at 500 ~ 2500 MHz S-parameters (dB) 1.2 0 -10 S11 -20 50 input & output matching -30 MTTF > 100 Years -40 S22 0 Single supply: +5 V 1.3 S21 10 1000 2000 3000 Frequency (MHz) 4000 5000 Applications Wide-band application at 500 ~ 3000 MHz IF, CATV application at 30 ~ 1200 MHz SMATV, ONU application at 50 ~ 3000 MHz 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4.0 mm2, surface mount 1/15 ASB Inc. [email protected] RoHS-compliant January 2017 AWG3015 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 70 150 500 900 2000 2500 2700 3000 MHz Gain 15.9 15.7 15.3 15.3 14.9 14.9 14.7 14.7 dB S11 -17.0 -20.0 -14.0 -18.0 -20.0 -20.0 -18.0 -18.0 dB S22 -16.0 -16.0 -12.0 -14.0 -16.0 -18.0 -18.0 -20.0 dB Noise Figure 2.5 2.5 2.2 2.2 2.7 3.1 3.4 3.7 dB IP31) 37.0 39.0 40.0 39.0 39.0 41.0 39.5 34.0 dBm Output P1dB 21.0 21.0 20.5 20.5 20.5 20.5 20.5 20.0 dBm Current 104 124 mA Device Voltage +4.3 +4.6 V Output 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typ Max Unit Frequency 2000 MHz Gain 14.9 dB S11 -20.0 dB S22 -16.0 dB Noise Figure 2.7 dB OIP3 39.0 dBm P1dB 20.5 dBm Current 104 mA Device Voltage +4.3 V 2.3 2/15 Min Pin Configuration Pin Description 1 RF_IN 2 Ground 3 RF_OUT & Bias ASB Inc. Simplified Outline [email protected] January 2017 AWG3015 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +6 V Operation Junction Temperature +150 C Input RF Power (At 2000 MHz, CW, 50 matched)* + 27 dBm *Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf The max. input power, in principle, depends upon the application frequency and matching circuit. 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 55 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/15 ASB Inc. [email protected] January 2017 AWG3015 3. Application: 500 ~ 3000 MHz 3.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 L1 C1 RF IN RF OUT AWG3015 C2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2 Bill of Material 4/15 Symbol Value Size Description Manufacturer AWG3015 - - MMIC Amplifier ASB C1, C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 33 nH 0603 RF choke inductor Murata R1 6.8 0603 Drop resistor Samsung ASB Inc. [email protected] January 2017 AWG3015 3.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Unit Frequency 500 900 2000 2500 2700 3000 MHz Gain 15.3 15.3 14.9 14.7 14.6 14.6 dB S11 -14.0 -18.0 -20.0 -20.0 -18.0 -17.0 dB S22 -12.0 -14.0 -16.0 -18.0 -20.0 -20.0 dB Noise Figure 2.2 2.2 2.7 3.0 3.3 3.6 dB IP31) 40.0 39.0 39.0 39.0 37.0 32.0 dBm Output P1dB 20.5 20.5 20.5 20.5 20.5 19.0 dBm Current 104 mA Device Voltage +4.3 V Output 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 7 S-parameters (dB) 20 6 S21 10 5 0 4 -10 S22 S11 -20 2 S12 -30 1 K -40 0 5/15 3 Stability Factor, K 3.3 1000 ASB Inc. 2000 3000 Frequency (MHz) [email protected] 0 4000 January 2017 AWG3015 3.4 Plots of Noise Figure and Performances with Temperature 120 115 Current (mA) 110 105 100 95 90 85 80 -60 25 -40 -20 0 20 40 Temperature (°C) 60 80 100 5 20 4 15 3 NF (dB) Gain (dB) Frequency = 2000 MHz 10 5 2 1 Frequency = 2000 MHz 0 0 -60 6/15 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2017 AWG3015 24 Frequency = 2000 MHz P1dB (dBm) 22 20 18 16 -60 7/15 ASB Inc. [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2017 AWG3015 4. Application: 30 ~ 1200 MHz (IF, CATV) 4.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 L1 C1 RF IN RF OUT AWG3015 C2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2 Bill of Material 8/15 Symbol Value Size Description Manufacturer AWG3015 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 - - Not used C4 10 F 0805 Decoupling capacitor Murata L1 3.3 H 0603 RF choke inductor Samsung R1 6.8 0603 Drop resistor Samsung ASB Inc. [email protected] January 2017 AWG3015 4.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Frequency 30 70 150 300 450 860 1000 1200 MHz Gain 16.8 15.9 15.7 15.6 15.5 15.3 15.2 15.1 dB S11 -10.0 -17.0 -20.0 -20.0 -20.0 -20.0 -20.0 -20.0 dB S22 -18.0 -16.0 -16.0 -16.0 -17.0 -18.0 -18.0 -18.0 dB Noise Figure Unit 2.6 2.5 2.5 2.4 2.4 2.4 2.4 2.4 dB IP31) 36.0 37.0 39.0 40.0 40.0 39.0 39.0 38.0 dBm Output P1dB 21.0 21.0 21.0 21.0 21.0 21.0 21.0 21.0 dBm Current 104 mA Device Voltage +4.3 V Output 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 7 S-parameters (dB) 20 6 S21 10 5 0 4 -10 3 S22 -20 S12 S11 -30 1 K -40 0 9/15 2 Stability Factor, K 4.3 300 ASB Inc. 600 900 Frequency (MHz) [email protected] 0 1200 January 2017 AWG3015 5. Application: 50 ~ 3000 MHz (SMATV, ONU) 5.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 L1 C1 RF IN RF OUT AWG3015 C2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2 Bill of Material 10/15 Symbol Value Size Description Manufacturer AWG3015 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 - - Not used C4 10 F 0805 Decoupling capacitor Murata L1 1 H 0603 RF choke inductor Samsung R1 6.8 0603 Drop resistor Samsung ASB Inc. [email protected] January 2017 AWG3015 5.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Frequency 50 500 1000 2000 2500 3000 MHz Gain 15.9 15.3 15.0 13.9 13.4 12.7 dB S11 -12.0 -20.0 -20.0 -15.0 -15.0 -13.0 dB S22 -16.0 -16.0 -18.0 -15.0 -15.0 -14.0 dB Noise Figure Unit 2.5 2.3 2.3 2.6 3.0 3.7 dB IP31) 35.0 40.0 38.0 37.0 37.0 33.0 dBm Output P1dB 20.5 20.5 20.5 20.5 20.0 18.0 dBm Current 104 mA Device Voltage +4.3 V Output 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. 5.3 Plot of S-parameter & Stability Factor 30 7 S-parameters (dB) 20 10 5 0 4 S11 -10 3 S22 -20 2 S12 -30 1 K -40 0 11/15 6 S21 500 0 1000 1500 2000 2500 3000 3500 Frequency (MHz) ASB Inc. [email protected] January 2017 AWG3015 6. Application: 500 ~ 3000 MHz (Vd = +4.6 V, Id = 124 mA) 6.1 Application Circuit & Evaluation Board Vsupply = +5 V R1 C4 C3 L1 C1 RF IN RF OUT AWG3015 C2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A2 Bill of Material 12/15 Symbol Value Size Description Manufacturer AWG3015 - - MMIC Amplifier ASB C1, C2 100 pF 0603 DC blocking capacitor Murata C3 100 pF 0603 Decoupling capacitor Murata C4 1 F 0603 Decoupling capacitor Murata L1 33 nH 0603 RF choke inductor Murata R1 3 0603 Drop resistor Samsung ASB Inc. [email protected] January 2017 AWG3015 6.2 Performance Table Supply voltage = +5 V, TA = +25 C, ZO = 50 Parameter Typical Frequency 500 900 2000 2500 2700 3000 MHz Gain 15.4 15.4 15.1 14.9 14.7 14.7 dB S11 -14.0 -18.0 -20.0 -20.0 -18.0 -18.0 dB S22 -11.0 -13.0 -16.0 -18.0 -18.0 -20.0 dB Noise Figure Unit 2.3 2.3 2.8 3.1 3.4 3.7 dB IP31) 42.0 41.0 41.0 41.0 39.5 34.0 dBm Output P1dB 21.0 21.0 20.5 20.5 20.5 20.0 dBm Current 124 mA Device Voltage +4.6 V Output 1) OIP3 is measured with two tones at an output power of +5 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 7 S-parameters (dB) 20 6 S21 10 5 0 4 -10 S22 -20 S12 -30 2 S11 1 K -40 0 13/15 3 Stability Factor, K 6.3 1000 ASB Inc. 2000 3000 Frequency (MHz) [email protected] 0 4000 January 2017 AWG3015 7. Package Outline (SOT89, 4.5x4.0x1.5 mm) Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e WG3015 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 8. Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. We recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 14/15 ASB Inc. [email protected] January 2017 AWG3015 9. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec (End of Datasheet) Copyright 2014-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or reproduced in any form or by any means without the prior written consent of ASB. 15/15 ASB Inc. [email protected] January 2017