MBRS410ET3 Preferred Device Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system. Typical applications are AC−DC and DC−DC converters, reverse battery protection, and “ORing” of multiple supply voltages and any other application where performance and size are critical. http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 4.0 AMPERES, 10 VOLTS Features • • • • • • • • • Very Low VF Accompanied by Low IR 1st in the Market Place with a 10 VR Schottky Rectifier Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Designed for Low Leakage Excellent Ability to Withstand Reverse Avalanche Energy Transients Guard−Ring for Stress Protection Pb−Free Package is Available SMC CASE 403 PLASTIC MARKING DIAGRAM Mechanical Characteristics AYWW B4E1G G • Case: Epoxy, Molded • Weight: 217 mg (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable B4E1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) • Lead and Mounting Surface Temperature for Soldering Purposes: • • 260°C Max. for 10 Seconds Polarity: Notch in Plastic Body Indicates Cathode Lead ESD Ratings: Machine Model = C Human Body Model = 3B ORDERING INFORMATION MAXIMUM RATINGS Symbol Value Unit Device Package Shipping † Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 10 V MBRS410ET3 SMC 2500/Tape & Reel 2500/Tape & Reel Average Rectified Forward Current (@ TL = 130°C) IO 4.0 SMC (Pb−Free) IFSM 250 A †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. TJ −65 to +150 °C Preferred devices are recommended choices for future use and best overall value. Rating Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) Operating Junction Temperature MBRS410ET3G A Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2005 August, 2005 − Rev. 2 1 Publication Order Number: MBRS410ET3/D MBRS410ET3 THERMAL CHARACTERISTICS Characteristic Symbol 5 mm x 5 mm (Note 2) 1 Inch x 1/2 inch RqJL 12 7.0 RqJA 109 59 VF TJ = 25°C TJ = 100°C 0.475 0.500 0.525 0.370 0.395 0.430 TJ = 25°C TJ = 100°C 50 150 2000 4000 Unit °C/W Thermal Resistance, Junction−to−Lead Thermal Resistance, Junction−to−Ambient ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A) (IF = 4.0 A) (IF = 8.0 A) Maximum Instantaneous Reverse Current (Note 1) IR (Rated dc Voltage, VR = 5.0 V) (Rated dc Voltage, VR = 10 V) V mA 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Mounted with Minimum Recommended Pad Size, PC Board FR4. 100 25°C VF @ 125°C IF, MAXIMUM INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 100 −40°C 100°C 10 75°C 1 0.1 VF @ 125°C 25°C 100°C 10 75°C 1 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E−02 10,000 100°C 1.0E−04 75°C 1.0E−05 25°C 1.0E−06 1.0E−07 25°C f = 1 MHz C, CAPACITANCE (pF) IR, REVERSE CURRENT (A) IR @ 125°C 1.0E−03 1000 0 2 4 6 8 10 0 2 4 6 8 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Typical Capacitance http://onsemi.com 2 10 MBRS410ET3 IF, AVERAGE FORWARD CURRENT (A) 8 RATED VOLTAGE APPLIED RqJL = 12 °C/W TJ = 125°C dc 7 6 5 PFO, AVERAGE POWER DISSIPATION (W) 9 SQUARE WAVE 4 3 2 1 0 100 110 120 130 140 150 160 TL, LEAD TEMPERATURE (°C) 3.5 dc 3 TJ = 125°C 2.5 2 SQUARE WAVE 1.5 1 0.5 0 0 R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 5. Current Derating, Junction−to−Lead 1 2 3 4 5 6 7 8 9 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 6. Forward Power Dissipation 100 D = 0.5 0.2 0.1 10 0.05 0.02 0.01 1 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 1000 t, TIME (S) R(t), TRANSIENT THERMAL RESISTANCE (°C/W) Figure 7. Thermal Response, Junction−to−Ambient (min pad) 100 D = 0.5 0.2 10 0.1 0.05 0.02 1 0.01 SINGLE PULSE 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (S) Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad) http://onsemi.com 3 MBRS410ET3 PACKAGE DIMENSIONS SMC PLASTIC PACKAGE CASE 403−03 ISSUE E HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. 4. 403−01 THRU −02 OBSOLETE, NEW STANDARD 403−03. E b DIM A A1 b c D E HE L L1 D MIN 1.90 0.05 2.92 0.15 5.59 6.60 7.75 0.76 MILLIMETERS NOM MAX 2.13 2.41 0.10 0.15 3.00 3.07 0.23 0.30 5.84 6.10 6.86 7.11 7.94 8.13 1.02 1.27 0.51 REF MIN 0.075 0.002 0.115 0.006 0.220 0.260 0.305 0.030 INCHES NOM 0.084 0.004 0.118 0.009 0.230 0.270 0.313 0.040 0.020 REF MAX 0.095 0.006 0.121 0.012 0.240 0.280 0.320 0.050 A L L1 c A1 SOLDERING FOOTPRINT* 4.343 0.171 3.810 0.150 2.794 0.110 SCALE 4:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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