Fairchild FFPF14X150S High voltage and high reliability Datasheet

FFPF14X150S
FFPF14X150S
Features
• High voltage and high reliability
• High speed switching
• Low forward voltage
TO-220F
Applications
1
• Suitable for damper diode in horizontal
deflection circuits
2
1. Cathode
2. Anode
DAMPER DIODE
Absolute Maximum Ratings
Symbol
TC=25°°C unless otherwise noted
VRRM
Parameter
Peak Repetitive Reverse Voltage
Value
1500
Units
V
IF(AV)
Average Rectified Forward Current
14
A
IFSM
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
@ TC = 125°C
140
A
TJ, TSTG
Operating Junction and Storage Temperature
- 65 to +150
°C
Value
1.5
Units
°C/W
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case
Electrical Characteristics
Symbol
V FM *
IRM *
TC=25 °C unless otherwise noted
Parameter
Maximum Instantaneous Forward Voltage
I F = 14A
I F = 14A
Maximum Instantaneous Reverse Current
@ rated VR
Min.
Typ.
Max.
TC = 25 °C
TC = 125 °C
-
-
2.4
2.1
TC = 25 °C
TC = 125 °C
-
-
20
300
Units
V
µA
trr
Maximum Reverse Recovery Time
(IF =1A, di/dt = 50A/µs)
-
-
120
ns
tfr
Maximum Forward Recovery Time
(IF =6.5A, di/dt = 50A/µs)
-
-
290
ns
-
-
13
V
Maximum Forward Recovery
VFRM
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2000 Fairchild Semiconductor International
Voltage
Rev. F, September 2000
FFPF14X150S
Typical Characteristics
1000
F
Reverse Current , I
10
Forward Current , I
100
o
TJ = 125 C
R
[A]
[µA]
100
o
TJ = 125 C
o
1
TJ = 25 C
0.1
0.0
10
o
TJ = 100 C
1
0.1
o
TJ = 25 C
0.01
0.4
0.8
1.2
1.6
2.0
2.4
0
2.8
300
600
Forward Voltage , VF [V]
rr
[ns]
Typical Capacitance
at 0V = 330 pF
350
300
Reverse Recovery Time , t
Capacitance , Cj [pF]
1500
300
400
250
200
150
100
50
200
di/dt = 50A/µs
100
di/dt = 100A/µs
0
0
0.1
1
10
1
100
2
3
4
5
6
7
8
9
10
Forward Current , IF [A]
Reverse Voltage , V R [V]
Figure 4. Typical Reverse Recovery Time
vs. Forward Current
Figure 3. Typical Junction Capacitance
20
F(AV)
[nC]
[A]
1000
800
di/dt = 100A/µs
600
400
di/dt = 50A/µs
200
0
1
2
3
4
5
6
7
8
Forward Current , IF [A]
Figure 5. Typical Stored Charge
vs. Forward Current
©2000 Fairchild Semiconductor International
9
10
15
C
D
Average Forward Current , I
rr
1200
Figure 2. Typical Reverse Current
vs. Reverse Voltage
Figure 1. Typical Forward Voltage Drop
vs. Forward Current
Stored Recovery Charge , Q
900
Reverse Voltage , VR [V]
10
5
0
80
100
120
140
160
o
Case Temperature , TC [ C]
Figure 6. Forward Current Derating Curve
Rev. F, September 2000
FFPF14X150S
Package Dimensions
TO-220F 2L
ø3.18 ±0.10
2.54 ±0.20
3.30 ±0.10
10.16 ±0.20
MAX1.47
15.87 ±0.20
(1.80)
(6.50)
(1.00x45°)
12.00 ±0.20
9.75 ±0.30
15.80 ±0.20
6.68 ±0.20
(0.70)
2.76 ±0.20
0.80 ±0.10
0.35 ±0.10
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
+0.10
0.50 –0.05
4.70 ±0.20
2.54TYP
[2.54 ±0.20]
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. F, September 2000
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with instructions for use provided in the labeling, can be
effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
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Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. F1
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