Diode Semiconductor Korea GL1A- - - GL1M REVERSE VOLTAGE: 50 - 1000 V CURRENT: 1.0 A SURFACE MOUNT RECTIFIERS FEATURES Plastic package has underwriters laboratory 111 flammability classifications DO - 213AA For surface mounted applications Low profile package SOLDERABLE ENDS 0 D2=D1 ＋ －0.20 Built-in strain relief,ideal for automated placement 1.6± 0.1 Glass passivated chip junction High temperature soldering: D2 o D1 111 250 C/10 seconds at terminals MECHANICAL DATA 0.5± 0.1 0.5± 0.1 3.5± 0.2 Case:JEDEC DO-213AA,molded plastic over 1111passivated chip Terminals:Solder Plated, solderable per MIL-STD1111750, Method 2026 Polarity: Color band denotes cathode end Weight: 0.0014 ounces, 0.036 gram Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25oC ambient temperature unless otherwise specified GL1A GL1B GL1D GL1G GL1J GL1K GL1M UNITS Maximum recurrent peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRWS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forw ord rectified current V @TL=75 Peak forw ard surge current V 8.3ms single half-sine-w ave superimposed V on rated load (JEDEC Method) Maximum instantaneous forw ard voltage at 1.0 A Maximum DC reverse current at rated DC blockjing voltage @TA=25oC IF(AV) 1.0 A IFSM 30 A VF IR @TA=125oC 1.2 1.3 5.0 A 50.0 Typical junction capacitance(NOTE 2) CJ 4.0 Typical reverse recovery time(NOTE3) t rr 1.5 Typical thermal resitance (NOTE 4) Operating junction temperature range Storage temperature range V R JA TJ TSTG 150 -55--------+150 -55--------+150 NOTE: 1.Measured at 1.0MHz and applied reverse voltage of 4.0volts 2.Thermal resistance form junction to ambient and junction to lead P.C.B mounted on 0.27"X0.27"(7.0X7.0mm2) copper pad areas 3.Measured with IF=0.5A,IR=1.0A,Irr=0.25A. 4 Thermal resistance from junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas pF S o C/W o C www.diode.kr Diode Semiconductor Korea GL1A- - -GL1M FIG.2 PEAK FORWARD SURGE CURRENT FIG.1 -- FORWARD DERATING CURVE Resistive or inductive Load 1.0 0.8 0.6 0.4 0.2X0.2(5.0X5.0mm) THICK COPPERPAND AREAS 0.2 0 0 20 40 60 80 100 120 140 160 PEAK FORWARD SURGE CURRENT,AMPERES AVERAGE FORWARD CURRENT,AMPERES 1.2 40 30 T J = 1 25 ℃ 8 .3 m s S in g le H a lf S in e -W a v e 20 10 0 1 2 INSTANTANEOUS FORWARD CURRENT,AMPERES 100 10 O TJ=25 C 1 0.01 0.4 0.6 0.8 1.0. 1.2 S 1.4 20 40 6 0 8 0 100 1.6 FIG.4 -- TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT MICROAMPERES FIG.3 -- TYPICAL FORWARD CHARACTERISTICS Puise Width=300 1%DUTY CYCLE 8 10 NUMBER OF CYCLES AT 60Hz AMBIENT TEMPERATURE 0.1 4 1.8 2.0 INSTANTANEOUS FORWARD VOLTAGE,VOLTS 100 10 O TJ=125 C 1 O TJ=75 C 0.1 TJ=25OC 0.01 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE, www.diode.kr