NEC NNCD3.9A Electrostatic discharge noise clipping diodes 400 mw type Datasheet

DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3A to NNCD12A
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(400 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
PACKAGE DIMENSIONS
Discharge) noise protection. Based on the IEC1000-4-2 test on
(in millimeters)
electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.
φ 0.4
(Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)
construction having allowable power dissipation of 400 mW.
Cathode
indication
FEATURES
• Based on the electrostatic discharge immunity test (IEC1000-4-
φ 2.0 MAX.
25 MIN.
2), the product assures the minimum endurance of 30 kV.
2.4 MAX.
25 MIN.
Type NNCD2.0A to NNCD12A Series is into DO-34 Package
• Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
• DHD (Double Heatsink Diode) construction.
APPLICATIONS
• Circuit E.S.D protection.
• Circuits for Waveform clipper, Surge absorber.
MAXIMUM RATINGS (TA = 25 °C)
Power Dissipation
P
400 mW
Surge Reverse Power
PRSM
100 W (tT = 10 µs 1 pulse)
Junction Temperature
Tj
175 °C
Storage Temperature
Tstg
–65 °C to +175 °C
Document No. D11769EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
Fig. 7
©
1996
NNCD3.3A to NNCD12A
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
Breakdown VoltageNote 1
VBR (V)
Type Number
Dynamic
ImpedanceNote 2
Zz (Ω)
Capacitance
Ct (pF)
TEST
CONDITION
E.S.D Voltage
(kV)
MIN.
MAX.
IT (mA)
MAX.
IT (mA)
MAX.
VR (V)
TYP.
NNCD3.3A
3.16
3.53
5
120
5
20
1.0
220
30
NNCD3.6A
3.47
3.83
5
120
5
10
1.0
210
30
NNCD3.9A
3.77
4.14
5
120
5
5
1.0
200
30
NNCD4.3A
4.05
4.53
5
120
5
5
1.0
180
30
NNCD4.7A
4.47
4.91
5
120
5
5
1.0
170
30
NNCD5.1A
4.85
5.35
5
100
5
5
1.5
160
30
NNCD5.6A
5.29
5.88
5
70
5
5
2.5
140
VR = 0 V
f = 1 MHz
MIN.
C = 150 pF
R = 330 Ω
30
(IEC1000
-4-2)
5.81
6.40
5
40
5
5
3.0
120
NNCD6.8A
6.32
6.97
5
30
5
2
3.5
110
30
NNCD7.5A
6.88
7.64
5
25
5
0.5
4.0
90
30
NNCD8.2A
7.56
8.41
5
20
5
0.5
5.0
90
30
NNCD9.1A
8.33
9.29
5
20
5
0.5
6.0
90
30
NNCD10A
9.19
10.3
5
20
5
0.2
7.0
80
30
NNCD11A
10.18
11.26
5
20
5
0.2
8.0
70
30
NNCD12A
11.13
12.30
5
25
5
0.2
9.0
70
30
2. Zz is measured at IT give a small A.C. signal.
TEST
CONDITION
30
NNCD6.2A
Notes 1. Tested with pulse (40 ms)
2
Reverse Leakage
IR (µA)
NNCD3.3A to NNCD12A
TYPICAL CHARACTERISTICS (TA = 25 °C)
Fig. 1 POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Fig. 2 THERMAL RESISTANCE vs.
SIZE OF P.C BOARD
600
= 10 mm
= 5 mm
= 3 mm
400
= 10 mm
300
P.C Board
7 mm
t = 0.035 mm
= 5 mm
200
100 P.C Board φ 3 mm = 3 mm
t = 0.035
0
0 20 40 60 80 100 120 140 160 180 200
Rth - Thermal Resistance - °C/W
500
Junction to
anbient
500
S
400
= 10 mm
= 5 mm
300
= 3 mm
200
100
0
20
0
Fig. 3 IT - VBR CHARACTERISTICS
NNCD7.5A
NNCD6.8A
40
80
100
Fig. 4 IT - VBR CHARACTERISTICS
NNCD8.2A
100 m
NNCD11A
100 m
NNCD9.1A
NNCD10A
NNCD3.3A
10 m NNCD3.6A
NNCD3.9A
NNCD4.3A
1m
NNCD12A
IT - On State Current - A
10 m
NNCD4.7A
100 µ
10 µ
1µ
100 n
60
S - Size of P.C Board - mm2
TA - Ambient Temperature - °C
IT - On State Current - A
P - Power Dissipation - mW
600
NNCD5.1A
1m
100 µ
10 µ
1µ
100 n
NNCD5.6A
NNCD6.2A
10 n
10 n
1n
1n
0
1
2
3
4
5
6
7
8
VBR - Breakdown Voltage - V
9 10
0
7
8
9 10 11 12 13 14 15
VBR - Breakdown Voltage - V
3
NNCD3.3A to NNCD12A
Fig. 5 Zz - IT CHARACTERISTICS
TA = 25 °C
TYP.
NNCD3.3A
100
NNCD3.9A
NNCD4.7A
5A
7.
CD
1
0.01
6A
5.
CD
NN
10
NN
ZZ - Dynamic Impedance - Ω
1 000
NN
CD
10
A
0.1
10
1
100
IT - On State Current - mA
Fig. 6 TRANSIENT THERMAL IMPEDANCE
Zth - Transient Thermal Impedance - °C/W
5 000
1 000
375 °C/W
NNCD [ ] A
100
10
5
1m
10 m
100 m
1
10
100
t - Time - s
Fig. 7 SURGE REVERSE POWER RATING
TA = 25 °C
Non-repetitive
PRSM
PRSM - Surge Reverse Power - W
1 000
tT
100
NNCD [ ] A
10
1
1µ
10 µ
100 µ
1m
tT - Pulse Width - s
4
10 m
100 m
NNCD3.3A to NNCD12A
REFERENCE
Document Name
Document No.
NEC semiconductor device reliability/quality control system
C11745E
NEC semiconductor device reliability/quality control system
MEI-1201
Quality grade on NEC semiconductor device
C11531E
Semiconductor device mounting technology manual
C10535E
Guide to quality assurance for semiconductor device
MEI-1202
5
NNCD3.3A to NNCD12A
[MEMO]
6
NNCD3.3A to NNCD12A
[MEMO]
7
NNCD3.3A to NNCD12A
[MEMO]
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
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intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
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The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
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Anti-radioactive design is not implemented in this product.
M4 96.5
8
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