Jiangsu FMMBD4448HTW Surface mount switching diode array Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diode
FMMBD4448HTW
WBFBP-06C
SURFACE MOUNT SWITCHING DIODE ARRAYS
(2×2×0.5)
unit: mm
DESCRIPTION
Silicon epitaxial planar
Switching Diode
FEATURES
z
Ultra-Small Surface Mount Package
z
Fast Switching Speed
z
High Conductance
1
APPLICATION
For General Purpose Switching Applications, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
FMMBD4448HTW
Marking:KAA
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Non-Repetitive Peak reverse voltage
Symbol
Limits
Unit
VRM
100
V
Peak Repetitive peak reverse voltage
VRRM
Working Peak Reverse Voltage
VRWM
80
V
DC Blocking
VR
Voltage
VR(RMS)
57
V
Forward Continuous Current
IFM
500
mA
Average Rectified Output Current
IO
250
mA
RMS Reverse Voltage
Non-Repetitive Peak forward surge current @=1.0µs
4.0
IFSM
@=1.0s
Pd
Power Dissipation
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature range
A
2.0
150
mW
RθJA
625
℃/W
TJ
150
℃
TSTG
-65 to +150
℃
Electrical Ratings @TA=25℃
Parameter
Unit
Conditions
V
IR=100μA
0.72
V
IF=5mA
VF2
0.855
V
IF=10mA
VF3
1.0
V
IF=100mA
VF4
1.25
V
IF=150mA
IR1
0.1
µA
VR=70V
IR2
25
nA
VR=20V
Capacitance between terminals
CT
3.5
pF
VR=6V,f=1MHz
Reverse Recovery Time
trr
4
ns
VR=6V,IF=5mA
Reverse Breakdown Voltage
Forward voltage
Reverse current
Symbol
Min.
VR
80
VF1
0.62
Typ.
Max.
Typical Characteristics
APPLICATION CIRCUITS
Bridge rectifiers
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