JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Diode FMMBD4448HTW WBFBP-06C SURFACE MOUNT SWITCHING DIODE ARRAYS (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar Switching Diode FEATURES z Ultra-Small Surface Mount Package z Fast Switching Speed z High Conductance 1 APPLICATION For General Purpose Switching Applications, rectifiers For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) FMMBD4448HTW Marking:KAA Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Parameter Non-Repetitive Peak reverse voltage Symbol Limits Unit VRM 100 V Peak Repetitive peak reverse voltage VRRM Working Peak Reverse Voltage VRWM 80 V DC Blocking VR Voltage VR(RMS) 57 V Forward Continuous Current IFM 500 mA Average Rectified Output Current IO 250 mA RMS Reverse Voltage Non-Repetitive Peak forward surge current @=1.0µs 4.0 IFSM @=1.0s Pd Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature range A 2.0 150 mW RθJA 625 ℃/W TJ 150 ℃ TSTG -65 to +150 ℃ Electrical Ratings @TA=25℃ Parameter Unit Conditions V IR=100μA 0.72 V IF=5mA VF2 0.855 V IF=10mA VF3 1.0 V IF=100mA VF4 1.25 V IF=150mA IR1 0.1 µA VR=70V IR2 25 nA VR=20V Capacitance between terminals CT 3.5 pF VR=6V,f=1MHz Reverse Recovery Time trr 4 ns VR=6V,IF=5mA Reverse Breakdown Voltage Forward voltage Reverse current Symbol Min. VR 80 VF1 0.62 Typ. Max. Typical Characteristics APPLICATION CIRCUITS Bridge rectifiers