SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP complements are BD644, BD646, BD648, BD650 and BD652 ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current ICM Collector Peak Current Value BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Page 1 of 5 60 80 100 120 140 45 60 80 100 120 Unit V V 5 V 8 A 12 A SEMICONDUCTORS BD643/645/647/649/651 Symbol Ratings IB Base Current PT Power Dissipation TJ Junction Temperature Ts @ Tmb < 25° Storage Temperature range BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit 150 mA 62.5 Watts 150 °C -65 to +150 Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol Ratings RthJ-MB From junction to mounting base RthJ-A From junction to ambient in free air Page 2 of 5 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit 2 K/W 70 K/W SEMICONDUCTORS BD643/645/647/649/651 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0,VCB =VCEOMAX ICBO Collector Cutoff Current IE=0,VCB =1/2 VCBOMAX, TJ=150°C ICEO IEBO Collector Cutoff Current Emitter Cutoff Current IE=0, VCE =1/2 VCEOMAX VEB=5 V, IC=0 IC=4 A, IB=16 mA VCE(SAT) Collector-Emitter saturation Voltage (*) IC=3 A, IB=12 mA IC=5 A, IB=50 mA VBE(SAT) Base-Emitter Saturation Voltage (*) IC=12 A, IB=50 mA Page 3 of 5 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Min Typ Mx Unit - - 0.1 mA - - 1 mA - - 0.2 mA - - 5.0 mA - - 2 2 2 2 2 2.5 2.5 2.5 2.5 2.5 V - - 3 V SEMICONDUCTORS BD643/645/647/649/651 Symbol Ratings IC=4 A, VCE=3 V VBE Base-Emitter Voltage (*) IC=3 A, VCE=3 V VCE=3.0 V, IC=0.5 A VCE=3.0 V, IC=4 A hFE DC Current Gain (*) VCE=3.0 V, IC=3 A VCE=3.0 V, IC=8 A VCE=3.0 V, IC=4 A, f=1MHz hfe Small Signal Current Gain VCE=3.0 V, IC=3 A, f=1MHz (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% Page 4 of 5 Value BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 750 750 10 10 10 10 10 - 1900 - 1800 - Unit 2.5 2.5 2.5 2.5 2.5 - V - SEMICONDUCTORS BD643/645/647/649/651 MECHANICAL DATA CASE TO-220 DIMENSIONS mm A B C D E F G H L M N P R S T U Pin 1 : Pin 2 : Pin 3 : 9,86 15,73 13,37 6,67 4,44 4,21 2,99 17,21 1,29 3,6 1,36 0,46 2,1 5 2,51 0,79 inches 0,39 0,62 0,52 0,26 0,17 0,16 0,11 0,68 0,05 0,14 0,05 0,02 0,08 0,19 0,098 0,03 Anode 1 Anode 2 Gate Page 5 of 5