Comset BD651 Silicon darlington power transistor Datasheet

SEMICONDUCTORS
BD643/645/647/649/651
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a
TO-220 enveloppe. They are intended for output stages in audio equipment,
general amplifiers, and analogue switching application.
PNP complements are BD644, BD646, BD648, BD650 and BD652
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
ICM
Collector Peak Current
Value
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Page 1 of 5
60
80
100
120
140
45
60
80
100
120
Unit
V
V
5
V
8
A
12
A
SEMICONDUCTORS
BD643/645/647/649/651
Symbol
Ratings
IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
Unit
150
mA
62.5
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-MB
From junction to mounting base
RthJ-A
From junction to ambient in free air
Page 2 of 5
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Value
Unit
2
K/W
70
K/W
SEMICONDUCTORS
BD643/645/647/649/651
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IE=0,VCB =VCEOMAX
ICBO
Collector Cutoff Current
IE=0,VCB =1/2 VCBOMAX,
TJ=150°C
ICEO
IEBO
Collector Cutoff Current
Emitter Cutoff Current
IE=0, VCE =1/2 VCEOMAX
VEB=5 V, IC=0
IC=4 A, IB=16 mA
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
IC=3 A, IB=12 mA
IC=5 A, IB=50 mA
VBE(SAT)
Base-Emitter Saturation
Voltage (*)
IC=12 A, IB=50 mA
Page 3 of 5
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
Min Typ Mx Unit
-
-
0.1
mA
-
-
1
mA
-
-
0.2
mA
-
-
5.0
mA
-
-
2
2
2
2
2
2.5
2.5
2.5
2.5
2.5
V
-
-
3
V
SEMICONDUCTORS
BD643/645/647/649/651
Symbol
Ratings
IC=4 A, VCE=3 V
VBE
Base-Emitter Voltage (*)
IC=3 A, VCE=3 V
VCE=3.0 V, IC=0.5 A
VCE=3.0 V, IC=4 A
hFE
DC Current Gain (*)
VCE=3.0 V, IC=3 A
VCE=3.0 V, IC=8 A
VCE=3.0 V, IC=4 A, f=1MHz
hfe
Small Signal Current Gain
VCE=3.0 V, IC=3 A, f=1MHz
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
Page 4 of 5
Value
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
BD643
BD645
BD647
BD649
BD651
750
750
10
10
10
10
10
-
1900
-
1800
-
Unit
2.5
2.5
2.5
2.5
2.5
-
V
-
SEMICONDUCTORS
BD643/645/647/649/651
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Pin 1 :
Pin 2 :
Pin 3 :
9,86
15,73
13,37
6,67
4,44
4,21
2,99
17,21
1,29
3,6
1,36
0,46
2,1
5
2,51
0,79
inches
0,39
0,62
0,52
0,26
0,17
0,16
0,11
0,68
0,05
0,14
0,05
0,02
0,08
0,19
0,098
0,03
Anode 1
Anode 2
Gate
Page 5 of 5
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