APTM10DHM09T3G Asymmetrical - Bridge MOSFET Power Module 13 14 Application • Welding converters • Switched Mode Power Supplies • Switched Reluctance Motor Drives Q1 CR3 18 22 7 23 8 Features • Power MOS V® MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged • Kelvin source for easy drive • Very low stray inductance - Symmetrical design • Internal thermistor for temperature monitoring • High level of integration 19 Q4 CR2 4 3 29 30 32 31 15 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 Benefits • Outstanding performance at high frequency operation • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Solderable terminals both for power and signal for easy PCB mounting • Low profile • RoHS Compliant 13 32 2 3 4 VDSS = 100V RDSon = 9mΩ typ @ Tj = 25°C ID = 139A @ Tc = 25°C 7 8 10 11 12 All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … Absolute maximum ratings IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 100 139 100 430 ±30 10 390 100 50 3000 Unit V A August, 2009 ID Parameter Drain - Source Breakdown Voltage V mΩ W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1–7 APTM10DHM09T3G – Rev 0 Symbol VDSS APTM10DHM09T3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions Min Tj = 25°C VGS = 0V,VDS = 80V Tj = 125°C VGS = 10V, ID = 69.5A VGS = VDS, ID = 2.5mA VGS = ±30 V, VDS = 0V Typ VGS = 0V,VDS = 100V 9 2 Max 100 500 10 4 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 50V ID =139A Td(on) Turn-on Delay Time Tr Td(off) Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Typ 9875 3940 1470 pF 350 nC 60 180 35 Inductive switching @ 125°C VGS = 15V VBus = 66V ID = 139A RG = 5Ω 70 ns 95 125 552 Inductive switching @ 25°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω µJ 604 608 Inductive switching @ 125°C VGS = 15V, VBus = 66V ID = 139A, RG = 5Ω µJ 641 Diode ratings and characteristics IRM IF VF Test Conditions Min Maximum Reverse Leakage Current VR=200V DC Forward Current Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 200 Maximum Peak Repetitive Reverse Voltage IF = 100A VR = 133V di/dt =200A/µs www.microsemi.com V Tj = 25°C Tj = 125°C Tc = 80°C IF = 100A IF = 200A IF = 100A Unit 250 500 Tj = 125°C 100 1 1.4 0.9 Tj = 25°C 60 Tj = 125°C Tj = 25°C 110 200 Tj = 125°C 840 µA A V August, 2009 VRRM ns nC 2–7 APTM10DHM09T3G – Rev 0 Symbol Characteristic APTM10DHM09T3G Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min Junction to Case Thermal Resistance RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight Typ MOSFET diode To heatsink M4 4000 -40 -40 -40 2.5 Max 0.32 0.55 Unit °C/W V 150 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT = R25 Typ 50 5 3952 4 Max Unit kΩ % K % T: Thermistor temperature ⎡ ⎛ 1 1 ⎞⎤ RT: Thermistor value at T − ⎟⎟⎥ exp ⎢ B25 / 85 ⎜⎜ ⎝ T25 T ⎠⎦⎥ ⎣⎢ SP3 Package outline (dimensions in mm) 12 See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com www.microsemi.com 3–7 APTM10DHM09T3G – Rev 0 August, 2009 28 17 1 APTM10DHM09T3G Typical MOSFET Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.9 0.3 0.25 0.7 0.2 0.5 0.15 0.3 0.1 Single Pulse 0.1 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics Transfert Characteristics 120 VGS=15V, 10V & 9V 500 ID, Drain Current (A) 400 300 8V 200 7V 6V 100 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 100 80 60 40 TJ=25°C 20 TJ=125°C 0 4 8 12 16 20 24 28 0 VDS, Drain to Source Voltage (V) 2 3 4 5 6 7 DC Drain Current vs Case Temperature 140 RDS(on) vs Drain Current 1.2 Normalized to VGS=10V @ 69.5A 1.1 VGS=10V 1 VGS=20V 0.9 1 VGS, Gate to Source Voltage (V) ID, DC Drain Current (A) 0.8 120 100 80 60 40 20 0 0 50 100 150 200 ID, Drain Current (A) 25 50 75 100 125 150 August, 2009 RDS(on) Drain to Source ON Resistance TJ=-55°C 0 TC, Case Temperature (°C) www.microsemi.com 4–7 APTM10DHM09T3G – Rev 0 ID, Drain Current (A) 600 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) VGS=10V ID= 69.5A 2.0 1.5 1.0 0.5 0.0 -50 -25 1.1 1.0 0.9 0.8 0.7 0.6 25 50 75 100 125 150 Maximum Safe Operating Area limited by RDSon 100µs 100 1ms Single pulse TJ=150°C TC=25°C 10 10ms 1 0 25 50 75 100 125 150 1 Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 0 VGS, Gate to Source Voltage (V) TC, Case Temperature (°C) 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com 10 100 VDS, Drain to Source Voltage (V) Gate Charge vs Gate to Source Voltage 16 ID=139A TJ=25°C 14 VDS=20V 12 VDS=50V 10 VDS=80V 8 6 4 2 0 0 100 200 300 400 500 August, 2009 -50 -25 C, Capacitance (pF) 0 TJ, Junction Temperature (°C) 1000 ID, Drain Current (A) VGS(TH), Threshold Voltage (Normalized) Threshold Voltage vs Temperature 1.2 ON resistance vs Temperature 2.5 Gate Charge (nC) 5–7 APTM10DHM09T3G – Rev 0 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.15 RDS(on), Drain to Source ON resistance (Normalized) APTM10DHM09T3G APTM10DHM09T3G Delay Times vs Current Rise and Fall times vs Current 160 120 td(off) 80 VDS=66V RG=5Ω TJ=125°C L=100µH 60 40 td(on) 120 100 80 tr 60 20 0 0 0 50 100 150 200 ID, Drain Current (A) 0 250 2.5 1 Switching Energy (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH Eoff Eon 0.5 50 100 150 200 ID, Drain Current (A) 250 Switching Energy vs Gate Resistance Switching Energy vs Current 1.5 Eon VDS=66V ID=139A TJ=125°C L=100µH 2 Eoff 1.5 1 Eon 0.5 0 0 100 150 200 250 0 10 ID, Drain Current (A) Operating Frequency vs Drain Current VDS=66V D=50% RG=5Ω TJ=125°C TC=75°C 200 150 ZVS 100 ZCS Hard switching 50 0 25 50 75 100 125 30 40 50 60 Source to Drain Diode Forward Voltage IDR, Reverse Drain Current (A) 300 250 20 Gate Resistance (Ohms) 1000 150 ID, Drain Current (A) TJ=150°C 100 TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 August, 2009 50 VSD, Source to Drain Voltage (V) www.microsemi.com 6–7 APTM10DHM09T3G – Rev 0 0 Frequency (kHz) tf 40 20 Eon and Eoff (mJ) VDS=66V RG=5Ω TJ=125°C L=100µH 140 tr and tf (ns) td(on) and td(off) (ns) 100 APTM10DHM09T3G Typical Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.6 0.9 0.5 0.7 0.4 0.5 0.3 0.2 0.3 0.1 0.1 0.05 Single Pulse 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Forward Current vs Forward Voltage trr, Reverse Recovery Time (ns) 150 100 TJ=125°C TJ=25°C 50 0 0.0 0.5 1.0 TJ=125°C VR=133V 100 A 100 130 A 80 50 A 60 40 1.5 0 200 QRR vs. Current Rate Charge 2.00 100 A TJ=125°C VR=133V 1.75 130 A 50 A 1.50 1.25 1.00 0.75 0.50 0 200 400 600 800 1000 1200 IRRM, Reverse Recovery Current (A) 1000 1200 IRRM vs. Current Rate of Charge 50 TJ=125°C VR=133V 40 100 A 130 A 50 A 30 20 10 0 0 200 400 -diF/dt (A/µs) 600 800 1000 1200 -diF/dt (A/µs) Capacitance vs. Reverse Voltage Max. Average Forward Current vs. Case Temp. 150 3200 2800 Duty Cycle = 0.5 TJ=150°C 125 2400 IF(AV) (A) C, Capacitance (pF) 400 600 800 -diF/dt (A/µs) 2000 1600 1200 100 75 50 800 August, 2009 QRR, Reverse Recovery Charge (µC) VF, Anode to Cathode Voltage (V) 25 400 0 0 1 10 100 1000 VR, Reverse Voltage (V) 25 50 75 100 125 150 Case Temperature (°C) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 7–7 APTM10DHM09T3G – Rev 0 IF, Forward Current (A) Trr vs. Current Rate of Charge 120 200