Microsemi APTM10DHM09T3G Asymmetrical - bridge mosfet power module Datasheet

APTM10DHM09T3G
Asymmetrical - Bridge
MOSFET Power Module
13
14
Application
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
Q1
CR3
18
22
7
23
8
Features
• Power MOS V® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
19
Q4
CR2
4
3
29
30
32
31
15
16
R1
28 27 26 25
23 22
20 19 18
29
16
30
15
31
14
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
13
32
2
3
4
VDSS = 100V
RDSon = 9mΩ typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
7
8
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Absolute maximum ratings
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
100
139
100
430
±30
10
390
100
50
3000
Unit
V
A
August, 2009
ID
Parameter
Drain - Source Breakdown Voltage
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–7
APTM10DHM09T3G – Rev 0
Symbol
VDSS
APTM10DHM09T3G
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
Tj = 25°C
VGS = 0V,VDS = 80V
Tj = 125°C
VGS = 10V, ID = 69.5A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Typ
VGS = 0V,VDS = 100V
9
2
Max
100
500
10
4
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 50V
ID =139A
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
9875
3940
1470
pF
350
nC
60
180
35
Inductive switching @ 125°C
VGS = 15V
VBus = 66V
ID = 139A
RG = 5Ω
70
ns
95
125
552
Inductive switching @ 25°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
µJ
604
608
Inductive switching @ 125°C
VGS = 15V, VBus = 66V
ID = 139A, RG = 5Ω
µJ
641
Diode ratings and characteristics
IRM
IF
VF
Test Conditions
Min
Maximum Reverse Leakage Current
VR=200V
DC Forward Current
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
Max
200
Maximum Peak Repetitive Reverse Voltage
IF = 100A
VR = 133V
di/dt =200A/µs
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V
Tj = 25°C
Tj = 125°C
Tc = 80°C
IF = 100A
IF = 200A
IF = 100A
Unit
250
500
Tj = 125°C
100
1
1.4
0.9
Tj = 25°C
60
Tj = 125°C
Tj = 25°C
110
200
Tj = 125°C
840
µA
A
V
August, 2009
VRRM
ns
nC
2–7
APTM10DHM09T3G – Rev 0
Symbol Characteristic
APTM10DHM09T3G
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
Typ
MOSFET
diode
To heatsink
M4
4000
-40
-40
-40
2.5
Max
0.32
0.55
Unit
°C/W
V
150
125
100
4.7
110
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
⎡
⎛ 1 1 ⎞⎤ RT: Thermistor value at T
− ⎟⎟⎥
exp ⎢ B25 / 85 ⎜⎜
⎝ T25 T ⎠⎦⎥
⎣⎢
SP3 Package outline (dimensions in mm)
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3–7
APTM10DHM09T3G – Rev 0
August, 2009
28
17
1
APTM10DHM09T3G
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.9
0.3
0.25
0.7
0.2
0.5
0.15
0.3
0.1
Single Pulse
0.1
0.05
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
120
VGS=15V, 10V & 9V
500
ID, Drain Current (A)
400
300
8V
200
7V
6V
100
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
100
80
60
40
TJ=25°C
20
TJ=125°C
0
4
8
12
16
20
24
28
0
VDS, Drain to Source Voltage (V)
2
3
4
5
6
7
DC Drain Current vs Case Temperature
140
RDS(on) vs Drain Current
1.2
Normalized to
VGS=10V @ 69.5A
1.1
VGS=10V
1
VGS=20V
0.9
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
0.8
120
100
80
60
40
20
0
0
50
100
150
200
ID, Drain Current (A)
25
50
75
100
125
150
August, 2009
RDS(on) Drain to Source ON Resistance
TJ=-55°C
0
TC, Case Temperature (°C)
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4–7
APTM10DHM09T3G – Rev 0
ID, Drain Current (A)
600
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
VGS=10V
ID= 69.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
1.1
1.0
0.9
0.8
0.7
0.6
25
50
75 100 125 150
Maximum Safe Operating Area
limited by
RDSon
100µs
100
1ms
Single pulse
TJ=150°C
TC=25°C
10
10ms
1
0
25 50
75 100 125 150
1
Capacitance vs Drain to Source Voltage
100000
Ciss
10000
Coss
Crss
1000
100
0
VGS, Gate to Source Voltage (V)
TC, Case Temperature (°C)
10
20
30
40
50
VDS, Drain to Source Voltage (V)
www.microsemi.com
10
100
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
16
ID=139A
TJ=25°C
14
VDS=20V
12
VDS=50V
10
VDS=80V
8
6
4
2
0
0
100
200
300
400
500
August, 2009
-50 -25
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
1000
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
Threshold Voltage vs Temperature
1.2
ON resistance vs Temperature
2.5
Gate Charge (nC)
5–7
APTM10DHM09T3G – Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM10DHM09T3G
APTM10DHM09T3G
Delay Times vs Current
Rise and Fall times vs Current
160
120
td(off)
80
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
60
40
td(on)
120
100
80
tr
60
20
0
0
0
50
100
150
200
ID, Drain Current (A)
0
250
2.5
1
Switching Energy (mJ)
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
Eoff
Eon
0.5
50
100
150
200
ID, Drain Current (A)
250
Switching Energy vs Gate Resistance
Switching Energy vs Current
1.5
Eon
VDS=66V
ID=139A
TJ=125°C
L=100µH
2
Eoff
1.5
1
Eon
0.5
0
0
100
150
200
250
0
10
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=66V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
200
150
ZVS
100
ZCS
Hard
switching
50
0
25
50
75
100
125
30
40
50
60
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
300
250
20
Gate Resistance (Ohms)
1000
150
ID, Drain Current (A)
TJ=150°C
100
TJ=25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
August, 2009
50
VSD, Source to Drain Voltage (V)
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6–7
APTM10DHM09T3G – Rev 0
0
Frequency (kHz)
tf
40
20
Eon and Eoff (mJ)
VDS=66V
RG=5Ω
TJ=125°C
L=100µH
140
tr and tf (ns)
td(on) and td(off) (ns)
100
APTM10DHM09T3G
Typical Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.6
0.9
0.5
0.7
0.4
0.5
0.3
0.2
0.3
0.1
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
150
100
TJ=125°C
TJ=25°C
50
0
0.0
0.5
1.0
TJ=125°C
VR=133V
100 A
100
130 A
80
50 A
60
40
1.5
0
200
QRR vs. Current Rate Charge
2.00
100 A
TJ=125°C
VR=133V
1.75
130 A
50 A
1.50
1.25
1.00
0.75
0.50
0
200
400
600
800
1000 1200
IRRM, Reverse Recovery Current (A)
1000 1200
IRRM vs. Current Rate of Charge
50
TJ=125°C
VR=133V
40
100 A
130 A
50 A
30
20
10
0
0
200
400
-diF/dt (A/µs)
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
Max. Average Forward Current vs. Case Temp.
150
3200
2800
Duty Cycle = 0.5
TJ=150°C
125
2400
IF(AV) (A)
C, Capacitance (pF)
400 600 800
-diF/dt (A/µs)
2000
1600
1200
100
75
50
800
August, 2009
QRR, Reverse Recovery Charge (µC)
VF, Anode to Cathode Voltage (V)
25
400
0
0
1
10
100
1000
VR, Reverse Voltage (V)
25
50
75
100
125
150
Case Temperature (°C)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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7–7
APTM10DHM09T3G – Rev 0
IF, Forward Current (A)
Trr vs. Current Rate of Charge
120
200
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