isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL312FP DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat) = 0.5V(Max) @ IC= 1A ·Very High Switching Speed APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1150 V VCEO Collector-Emitter Voltage 500 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-peak tp<5ms 10 A IB Base Current-Continuous 3 A IBM Base Current-peak tp<5ms 4 A PC Collector Power Dissipation TC=25℃ 36 W Ti Junction Temperature 150 ℃ -65~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.5 ℃/W Rth j-A Thermal Resistance,Junction to Ambient 62.5 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL312FP ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A 0.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A 0.7 V VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.1 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A 1.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A 1.1 V VBE(sat)-3 Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A 1.2 V ICES Collector Cutoff Current VCE=1150V; VBE= 0 VCE=1150V; VBE= 0, TC= 125℃ 1.0 2.0 mA ICEO Collector Cutoff Current VCE= 500V; IB= 0 0.25 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 2.5V 1.9 μs 0.16 μs 500 V 9 V B B B B B B 8 10 Switching Times, Inductive Load ts Storage Time tf Fall Time isc Website：www.iscsemi.cn IC= 2A; VCL= 250V; L= 200μH; IB1= 0.4A; VBE(off)= -5V; RBB= 0Ω