NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H2222A █ APPLICATIONS General Purpose Transistors. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） TO-92 T stg ——Storage Temperature………………………… -55~150℃ T j ——Junction Temperature…………………………………150℃ PC——Collector Dissipation…………………………………625mW 1―Emitter，E 2―Base，B 3―Collector，C VCBO ——Collector-Base Voltage………………………………75V VCEO ——Collector-Emitter Voltage……………………………40V VE B O ——Emitter -Base Voltage………………………………6V I C ——Collector Current …………………………………… 600mA █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage ７５ Ｖ BVCEO Collector-Emitter Breakdown Voltage ４０ Ｖ BVEBO Emitter-Base Breakdown Voltage ６ Ｖ IE=10μA，IC=0 VCE=10V, IC=150mA HFE DC Current Gain １００ ４００ IC=10μA, IE=0 IC=10mA, IB=0 Collector- Emitter Saturation Voltage ０．３ Ｖ IC=150mA, IB=15mA ICBO Collector Cut-off Current １０ ｎＡ VCB=60V, IE=0 IEBO Emitter Cut-off Current １０ VEB=3V, IC=0 fT Cob Current Gain-Bandwidth Product ｎＡ ＭＨｚ ｐＦ VCE(sat) Output Capacitance ３００ ８ VCE=20V, IC=20mA VCB=10V, IE=0，f=1ＭＨｚ