Product Folder Sample & Buy Support & Community Tools & Software Technical Documents Reference Design ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 ISO1176T Isolated Profibus RS-485 Transceiver with Integrated Transformer Driver 1 Features • 1 • • • • • • • • Meets or Exceeds the Requirements of EN 50170 and TIA/EIA-485-A Signaling Rates up to 40 Mbps Easy Isolated Power Design with Integrated Transformer Driver Typical Efficiency > 60% (ILOAD = 100 mA) - see SLUU471 Differential Output exceeds 2.1 V (54-Ω Load) Low Bus Capacitance 10 pF (Maximum) Fail-safe Receiver for Bus Open, Short, or Idle 50-kV/µs Typical Transient Immunity Safety and Regulatory Approvals – 4242 VPK Basic Insulation per DIN V VDE V 0884-10 and DIN EN 61010-1 – 2500 VRMS Isolation for 1 minute per UL 1577 – CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 61010-1 Standards The galvanically isolated differential bus transceiver is an integrated circuit designed for bi-directional data communication on multipoint bus-transmission lines. The transceiver combines a galvanically isolated differential line driver and differential input line receiver. The driver has an active-high enable with isolated enable-state output on the ISODE pin (pin 10) to facilitate direction control. The driver differential outputs and the receiver differential inputs connect internally to form a differential input/output (I/O) bus port that is designed to offer minimum loading to the bus whenever the driver is disabled or VCC2 = 0. Any cabled I/O can be subjected to electrical noise transients from various sources. These noise transients can cause damage to the transceiver and/or near-by sensitive circuitry if they are of sufficient magnitude and duration. The ISO1176T can significantly reduce the risk of data corruption and damage to expensive control circuits. The device is characterized for operation over the ambient temperature range of –40°C to 85°C. • 2 Applications • • • • • • Profibus® Factory Automation Networked Sensors Motor/motion Control HVAC and Building Automation Networks Networked Security Stations Device Information(1) PART NUMBER BODY SIZE (NOM) SOIC (16) 10.30 mm × 7.50 mm (1) For all available packages, see the orderable addendum at the end of the datasheet. Typical Application X-FMR 3 Description 4 8 3 2 7 6 LDO D1 1 C4 C5 3 2 C1 1 The ISO1176T is an isolated differential line transceiver with integrated oscillator outputs that provide the primary voltage for an isolation transformer. The device is ideal for long transmission lines because the ground loop is broken to allow the device to operate with a much larger common-mode voltage range. The symmetrical isolation barrier of each device is tested to provide 4242VPK of isolation per VDE for 60 seconds between the line transceiver and the logiclevel interface. PACKAGE ISO1176T 5 OUT IN 5 C6 EN GND NC 4 D2 1 2 4 C2 3 5 6 Control Circuitry D1 VCC2 16 C3 Isolated Supply to other Components D2 VCC1 B GND1 A R ISODE 13 12 10 Profibus Interface RE 7 DE GND2 D GND2 8 14, 15 9, 11 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com Table of Contents 1 2 3 4 5 6 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Pin Configuration and Functions ......................... Specifications......................................................... 6.1 6.2 6.3 6.4 6.5 6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13 7 1 1 1 2 4 4 Absolute Maximum Ratings ...................................... 4 ESD Ratings.............................................................. 5 Recommended Operating Conditions....................... 5 Thermal Information .................................................. 5 Electrical Characteristics: Power Rating ................... 5 Electrical Characteristics: ISODE-Pin ....................... 6 Electrical Characteristics: RS-485 Driver.................. 6 Electrical Characteristics: Receiver .......................... 7 Supply Current .......................................................... 7 Transformer Driver Characteristics ......................... 8 Switching Characteristics: RS-485 Driver ............... 9 Switching Characteristics: Receiver........................ 9 Typical Characteristics .......................................... 10 Parameter Measurement Information ................ 12 8 Detailed Description ............................................ 17 8.1 8.2 8.3 8.4 9 Overview ................................................................. Functional Block Diagram ....................................... Feature Description................................................. Device Functional Modes........................................ 17 17 18 20 Application and Implementation ........................ 23 9.1 Application Information............................................ 23 9.2 Typical Application ................................................. 23 10 Power Supply Recommendations ..................... 26 11 Layout................................................................... 26 11.1 Layout Guidelines ................................................. 26 11.2 Layout Example .................................................... 27 12 Device and Documentation Support ................. 28 12.1 12.2 12.3 12.4 12.5 Documentation Support ........................................ Community Resources.......................................... Trademarks ........................................................... Electrostatic Discharge Caution ............................ Glossary ................................................................ 28 28 28 28 28 13 Mechanical, Packaging, and Orderable Information ........................................................... 28 4 Revision History NOTE: Page numbers for previous revisions may differ from page numbers in the current version. Changes from Revision F (October 2012) to Revision G Page • Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1 • VDE standard changed to DIN V VDE V 0884-10 (VDE V 0884-10):2006-12 ...................................................................... 1 • Added Maximum Device Power Dissipation to Power Rating Table. .................................................................................... 5 Changes from Revision E (August 2011) to Revision F • Page Changed From "ISO1176T Reference Design SLLU471" To: "ISO1176T Reference Design SLUU471"........................... 28 Changes from Revision D (May 2011) to Revision E Page • Deleted the MIN and MAX values for tr_D, tf_D and tBBM specifications in the Transformer Driver Characteristics table. ....... 8 • Changed test conditions from 1.9 V to 2.4 V, and changed TYP value from 230 to 350 for fSt specification in the Transformer Driver Characteristics table................................................................................................................................ 8 Changes from Revision C (February 2011) to Revision D Page • Added Figure 33 ..................................................................................................................................................................... 1 • Moved the Pin Description closer to the Pin drawing............................................................................................................. 4 2 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 Changes from Revision B (December 2010) to Revision C Page • Deleted ROFF from the TRANSFORMER DRIVER CHARACTERISTICS table ..................................................................... 8 • Added a Typ value of 23ns to Prop delay time for VCC1 = 5V in the RS-485 DRIVER SWITCHING CHARACTERISTIC table ....................................................................................................................................................... 9 • Added a Typ value of 25ns to Prop delay time for VCC1 = 3.3V in the RS-485 DRIVER SWITCHING CHARACTERISTIC table ....................................................................................................................................................... 9 • Changed θJA = 212°C/W To: θJA = 76°C/W, Changed the IS Max value From: 128mA To: 347mA, and changed paragraph two in the IEC SAFETY LIMITING VALUES section .......................................................................................... 19 • Changed Figure 29............................................................................................................................................................... 19 Changes from Revision A (December 2010) to Revision B Page • Changed the Steady-state short-circuit output current - Test Conditions and values............................................................ 6 • Changed the Oscillator frequency values............................................................................................................................... 8 • Changed the D1, D2 output rise time values ......................................................................................................................... 8 Changes from Revision initial (October 2010) to Revision A Page • Updated transformer driver characteristics............................................................................................................................. 8 • Added Thermal Table data ................................................................................................................................................... 19 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 3 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 5 Pin Configuration and Functions DW Package 16-Pin SOIC Top View D1 D2 1 16 2 15 GND1 VCC1 R RE DE D 3 4 14 13 5 12 6 11 7 10 8 9 VCC2 GND2 GND2 B A GND2 ISODE GND2 Pin Functions PIN NAME I/O NO. DESCRIPTION A 12 I/O Non-inverting Driver Output / Receiver Input B 13 I/O Inverting Driver Output / Receiver Input D 8 I Driver Input D1 1 O Transformer Driver Terminal 1, Open Drain Output D2 2 O Transformer Driver Terminal 2, Open Drain Output DE 7 I Driver Enable Input GND1 3 — Logic-side Ground GND2 9, 11, 14, 15 — Bus-side Ground. All pins are internally connected. ISODE 10 O Bus-side Driver Enable Output Status R 5 O Receiver Output RE 6 I Receiver Enable Input. This pin has complementary logic. VCC1 4 — Logic-side Power Supply VCC2 16 — Bus-side Power Supply 6 Specifications 6.1 Absolute Maximum Ratings See (1) VCC1, VCC2 Input supply voltage (2) Voltage at any bus I/O terminal VO MIN MAX UNIT –0.5 7 V –9 14 V 14 V 7 V Voltage at D1, D2 VI Voltage input at D, DE or RE terminal –0.5 IO Receiver output current –10 10 mA ID1, ID2 Transformer Driver Output Current 450 mA TJ Maximum junction temperature 170 °C TSTG Storage temperature 150 °C (1) (2) 4 –65 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values except differential I/O bus voltages are with respect to the referenced network ground terminal and are peak voltage values. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 6.2 ESD Ratings VALUE V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS001 (1) Bus pins to GND1 ±6000 Bus pins to GND2 ±10000 All pins ±4000 Charged-device model (CDM), per JEDEC specification JESD22-C101 (2) V ±1500 Machine model (MM), ANSI/ESDS5.2-1996 (1) (2) UNIT ±200 JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. 6.3 Recommended Operating Conditions over operating free-air temperature range (unless otherwise noted) MIN Logic side supply voltage, VCC1 (with respect to GND1) VCC Bus side supply voltage, VCC2 (with respect to GND2) VCM Voltage at either bus I/O terminal VIH High-level input voltage VIL Low-level input voltage VID Differential input voltage NOM MAX 3 5.5 4.75 5.25 A, B –7 12 RE 2 VCC1 D, DE 0 TA Ambient temperature TJ Operating junction temperature 1 / tUI Signaling Rate V V 0.8 D, DE Output Current V 0.7 VCC1 RE IO UNIT V 0.3 VCC1 A with respect to B –12 12 RS-485 driver –70 70 –8 8 -40 85 Receiver V mA °C 150 °C 40 Mbps 6.4 Thermal Information ISO1176T THERMAL METRIC (1) DW (SOIC) UNIT 16 PINS RθJA Junction-to-ambient thermal resistance 76 °C/W RθJC(top) Junction-to-case (top) thermal resistance 37.9 °C/W RθJB Junction-to-board thermal resistance 44.6 °C/W ψJT Junction-to-top characterization parameter 12.1 °C/W ψJB Junction-to-board characterization parameter 37.9 °C/W (1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953. 6.5 Electrical Characteristics: Power Rating over operating free-air temperature range (unless otherwise noted) PARAMETER PD Maximum device power dissipation TEST CONDITIONS VCC1 = 5.5 V, VCC2 = 5.25 V, TJ = 150°C, CL = 50 pf, RL = 54 Ω Input a 20 MHz 50% duty cycle square wave VALUE UNIT 719 mW Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 5 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 6.6 Electrical Characteristics: ISODE-Pin over operating free-air temperature range (unless otherwise noted) PARAMETER VOH High-level output voltage VOL Low-level output voltage TEST CONDITIONS MIN TYP IOH = –8mA VCC2 – 0.8 4.6 IOH = –20µA VCC2 – 0.1 5 MAX UNIT V IOL = 8mA 0.2 0.4 IOL = 20µA 0 0.1 V 6.7 Electrical Characteristics: RS-485 Driver over recommended operating conditions (unless otherwise noted) PARAMETER VOD Open-circuit differential output voltage |VOD(SS)| Steady-state differential output voltage magnitude |ΔVOD(SS)| TEST CONDITIONS MIN TYP MAX UNIT VCC2 V |VA – VB|, See Figure 9 1.5 See Figure 10 and Figure 14 2.1 See Figure 11, Common-mode loading with Vtest from –7 V to +12 V 2.1 Change in steady-state differential output voltage between logic states See Figure 12 and Figure 13, RL = 54 Ω -0.2 0.2 VOC(SS) Steady-state common-mode output voltage See Figure 12 and Figure 13, RL = 54 Ω 2 3 ΔVOC(SS) Change in steady-state common-mode output voltage See Figure 12 and Figure 13, RL = 54 Ω –0.2 0.2 VOC(pp) Peak-to-peak common-mode output voltage See Figure 12 and Figure 13, RL = 54 Ω VOD(ring) Differential output voltage over and under shoot See Figure 14 and Figure 17 II Input current D, DE at 0 V or VCC1 IO(OFF) Power-off output current VCC2 = 0 V IOZ High-impedance output current DE at 0 V IOS(P) Peak short-circuit output current IOS(SS) Steady-state short-circuit output current COD Differential output capacitance CMTI Common-mode transient immunity 6 See Figure 16, DE at VCC1 V V V 0.5 10% –10 10 VOD(pp) µA See receiver input current See receiver input current VOS = –7 V to 12 V –250 VOS = 12 V, D at GND1 VOS = –7 V, D at VCC1 250 135 –135 mA mA See receiver CIN See Figure 27 Submit Documentation Feedback 25 kV/µs Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 6.8 Electrical Characteristics: Receiver over recommended operating conditions (unless otherwise noted) PARAMETER VIT(+) Positive-going input threshold voltage VIT(–) Negative-going input threshold voltage Vhys Hysteresis voltage (VIT+ – VIT–) VOH High-level output voltage VOL Low-level output voltage VOH High-level output voltage VOL Low-level output voltage TEST CONDITIONS See Figure 23 VCC1 = 3.3 V ± 10% and VCC2 = 5 V ± 5% IO = 8mA VID = 200 mV, See Figure 23 VID = –200 mV, See Figure 23 VCC1 = 5 V ± 10% and VCC2 = 5 V ± 5% VID = 200 mV, See Figure 23 VID = –200 mV, See Figure 23 IA, IB IA(off), IB(off) Bus pin input current MIN IO = –8mA VI = –7 or 12 V, Other input = 0 V –200 TYP MAX UNIT –80 –10 mV –120 mV 25 mV IOH = –8 mA VCC1 – 0.4 3 IOH = –20 µA VCC1 – 0.1 3.3 V IOL = 8 mA 0.2 0.4 IOL = 20 µA 0 0.1 IOH = –8 mA VCC1 – 0.8 4.6 IOH = –20 µA VCC1 – 0.1 5 V IOL = 8 mA 0.2 0.4 IOL = 20 µA 0 0.1 VCC2 = 4.75 V or 5.25 V V V –160 200 µA µA VCC2 = 0 V II Receiver enable input current RE = 0 V –50 50 IOZ High-impedance state output current RE = VCC1 –1 1 RID Differential input resistance A, B 60 CID Differential input capacitance Test input signal is a 1-MHz sine wave with 1-Vpp amplitude. CD is measured across A and B. 7 CMR Common mode rejection See Figure 26 4 µA kΩ 10 pF V 6.9 Supply Current over operating free-air temperature range (unless otherwise noted) PARAMETER ICC1 (1) ICC2 (1) (1) Logic-side quiescent supply current Bus-side quiescent supply current TEST CONDITIONS VCC1 = 3.3 V ± 10%, DE, RE = 0V or VCC1, No load VCC1 = 5 V ± 10%, DE, RE = 0V or VCC1, No load VCC2 = 5 V ± 5%, DE, RE = 0V or VCC1, No load MIN TYP MAX UNIT 4.5 8 mA 7 11 mA 13.5 18 mA ICC1 and ICC2 are measured when device is connected to external power supplies. D1 and D2 are disconnected from external transformer. Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 7 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 6.10 Transformer Driver Characteristics over operating free-air temperature range (unless otherwise noted) PARAMETER fOSC RON tr_D tf_D fSt tBBM 8 Oscillator frequency Switch on resistance D1, D2 output rise time D1, D2 output fall time Startup frequency Break before make time delay TEST CONDITIONS MIN TYP MAX VCC1 = 5 V ± 10%, D1 and D2 connected to Transformer 350 450 610 VCC1 = 3.3 V ± 10%, D1 and D2 connected to Transformer 300 400 550 D1 and D2 connected to 50Ω pullup resistors 1 2.5 VCC1 = 5 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors 80 VCC1 = 3.3 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors 70 VCC1 = 5 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors 55 VCC1 = 3.3 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors 80 VCC1 = 2.4 V, D1 and D2 connected to Transformer VCC1 = 3.3 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors Submit Documentation Feedback kHz Ω ns ns 350 VCC1 = 5 V ± 10%, See Figure 28, D1 and D2 connected to 50-Ω pullup resistors UNIT kHz 38 ns 140 Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 6.11 Switching Characteristics: RS-485 Driver over operating free-air temperature range (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT See Figure 17 VCC1 = 5V ± 10%, VCC2 = 5V ± 5% 23 35 ns 2 5 ns 25 40 ns 2 5 ns tPLH, tPHL Prop delay time tsk(p) Pulse skew (|tPHL – tPLH|) tPLH, tPHL Prop delay time tsk(p) Pulse skew (|tPHL – tPLH|) See Figure 17 VCC1 = 3.3V ± 10%, VCC2 = 5V ± 5% tr Differential output signal rise time See Figure 17 2 3 7.5 ns tf Differential output signal fall time See Figure 17 2 3 7.5 ns tpDE DE to ISODE prop delay See Figure 21 30 ns tt(MLH) , tt(MHL) Output transition skew See Figure 18 1 ns tp(AZH), tp(BZH), tp(AZL), tp(BZL) Propagation delay, high-impedance-to-active output 80 ns tp(AHZ), tp(BHZ), tp(ALZ), tp(BLZ) Propagation delay, active-to-high-impedance output 80 ns | tp(AZL) – tp(BZH) | | tp(AZH) – tp(BZL) | Enable skew time 1.5 ns t(CFB) Time from application of short-circuit to current fold back See Figure 16 t(TSD) Time from application of short-circuit to thermal shutdown See Figure 16, TA = 25°C See Figure 19 and Figure 20, CL = 50pf, RE at 0 V 0.55 0.5 µs 100 µs 6.12 Switching Characteristics: Receiver over recommended operating conditions (unless otherwise noted) PARAMETER TYP MAX See Figure 23 VCC1 = 5 V ± 10%, VCC2 = 5 V ± 5% TEST CONDITIONS 50 65 ns 2 5 ns See Figure 23 VCC1 = 3.3 V ± 10%, VCC2 = 5 V ± 5% 53 70 ns 2 5 ns Output signal rise time 2 4 ns Output signal fall time 2 4 ns 13 25 ns 13 25 ns 13 25 ns 13 25 ns tPLH, tPHL Propagation delay time tsk(p) Pulse skew (|tPHL – tPLH|) tPLH, tPHL Propagation delay time tsk(p) Pulse skew (|tpHL - tpLH|) tr tf tPZH Propagation delay, high-impedance-to-highlevel output tPHZ Propagation delay, high-level-to-highimpedance output tPZL Propagation delay, high-impedance-to-lowlevel output tPLZ Propagation delay, low-level-to-highimpedance output MIN UNIT DE at VCC1, See Figure 24 DE at VCC1, See Figure 25 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 9 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 6.13 Typical Characteristics 90 35 No Load TA = 25°C 30 ICC2 @ 5 V 80 RL = 54 W, CL = 50 pF, TA = 25°C ICC - Supply Current - mA ICC - Supply Current - mA 70 25 ICC2 @ 5 V 20 15 ICC1 @ 5 V ICC1 @ 3.3 V 10 5 40 30 20 0 0 5 10 15 20 25 Data Rate - Mbps 30 35 40 Figure 1. RMS Supply Current (ICC1 and ICC2) vs Signaling Rate With No Load 5 4 15 20 25 Data Rate - Mbps 30 35 40 15 pF Load TA = 25°C -89 -79 50 Ω 3 VCC2 = 4.75 V 2.5 2 1.5 -69 -59 -49 -39 -29 -19 1 0.5 -9 TA = 25 C 0 20 40 60 IL − Load Current − mA 1 0 80 1 2 3 4 5 VO - Output Voltage - V Figure 3. Differential Output Voltage vs Load Current Figure 4. Receiver High-Level Output Voltage Vs High-Level Output Current 0.7 110 15 pF Load TA = 25°C 100 VCC = 4.75 V 0.6 Driver Enable Skew − ns 90 80 70 60 50 40 30 20 0.5 VCC = 5.25 V 0.4 VCC = 5 V 0.3 0.2 0.1 10 0 10 100 Ω IO - Output Current - mA VCC2 = 5.25 V 3.5 0 0 -99 VCC2 = 5 V 4.5 0 1 2 3 VO - Output Voltage - V 4 0 −40 5 Figure 5. Receiver Low-Level Output Voltage vs Low-Level Output Current 10 ICC1 @ 3.3 V ICC1 @ 5 V Figure 2. RMS Supply Current (ICC1 and ICC2) vs Signaling Rate With Load 5 VOD − Differential Output Voltage − V 50 10 0 IO - Output Current - mA 60 RL = 110 Ω, CL = 50 pF −15 10 35 60 TA − Free-Air Temperature − °C 85 Figure 6. Driver Enable Skew vs Free-Air Temperature Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 Typical Characteristics (continued) 58 28 56 26 Receiver Propagation Delay - ns Driver Propagation Delay - ns tPHL (VCC1 = 3.3 V) tPLH (VCC1 = 3.3 V) 24 22 tPHL (VCC1 = 5 V) 20 tPHL (VCC1 = 5 V) 54 CL = 15 pH, VCC2 = 5 V tPHL (VCC1 = 3.3 V) tPLH (VCC1 = 3.3 V) 52 50 48 tPHL (VCC1 = 5 V) 46 tPLH (VCC1 = 5 V) 44 18 -40 -15 10 35 60 TA - Free-Air Temperature - °C 42 -40 85 Figure 7. Driver Propagation Delay vs Free-Air Temperature -15 10 35 60 TA - Free-Air Temperature - °C 85 Figure 8. Receiver Propagation Delay vs Free-Air Temperature Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 11 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 7 Parameter Measurement Information VCC1 VCC1 IOA DE IOA DE A A II 0 or VCC1 B GND1 II 0 or VCC1 VOD D IOB GND2 B GND2 GND1 VI 54 W VOD D IOB VI VOA VOB GND1 VOB GND2 GND 1 VOA GND2 Figure 9. Open Circuit Voltage Test Circuit Figure 10. VOD Test Circuit VCC2 VCC1 IOA RL 2 DE DE 375 W A D 0 or 3 V . B + VOD - A II 0 or VCC1 60 W VOD D - 7 V to12 V B GND1 RL 2 IOB VI 375 W GND2 GND2 VOB GND1 Figure 11. Driver VOD with Common-mode Loading Test Circuit VOC VOA GND2 Figure 12. Driver VOD and VOC Without CommonMode Loading Test Circuit VCC1 IOA DE RL 2 A Input Input Generator : PRR = 500 kHz , 50 % duty VI cycle, t r < 6 ns , t f < 6 ns , ZO = 50 W II D GND1 VOD B VOB GND1 RL 2 IOB GND2 VOA A VA B VB VOC VOC(p-p) VOC VOC (SS ) GND2 Figure 13. Steady-State Output Voltage Test Circuit and Voltage Waveforms VOD(RING ) VOD (SS ) VOD ( pp) 0V differential Figure 14. VOD(RING) Waveform and Definitions 12 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 VCC1 IOA DE A 0 or VCC1 II VI V OD B D IOB GND 2 GND 1 V OA V OB GND 1 54 W GND 2 Figure 15. Input Voltage Hysteresis Test Circuit DE 250 Output Current - mA IOS A D IOS B + V_ OS GND1 GND2 135 60 t(CFB) time t(TSD) Figure 16. Driver Short-Circuit Test Circuit and Waveforms (Short Circuit applied at Time t=0) 3V DE VCC1 A D Input Generator B VI VOD R L = 54 W ±1 % VI C L = 50 pF ± 20% VOD C L includes fixture and instrumentation capacitance GND1 1.5 V tpHL tpLH 50 W Generator: PRR= 500 kHz , 50 % duty cycle, t r < 6ns , t f < 6 ns ,ZO = 50 W 1.5 V 90% 90% 0V 10 % VOD(H) 0V 10% VOD(L) tf tr Figure 17. Driver Switching Test Circuit and Waveforms DE VCC1 A 50 % D Input Generator VI RL= 54 W CL = 50pF ± 20% ±1% B 50 W GND1 Generator : PRR= 500 kHz, 50 % duty cycle, t r< 6ns , t f <6 ns ,ZO = 50 W 50 % A VO B tt(MHL) GND2 V OA VOB tt(MLH) 50 % 50 % CL includes fixture and instrumentation capacitance Figure 18. Driver Output Transition Skew Test Circuit and Waveforms RL= 110 W VCC2 A V IN = 0V CL = 50 pF D B 50 W GND 1 1.5 V t(ALZ) t(AZL) A RL= 110 W DE Signal Generator DE 0V VOA VOB CL = 50 pF 50% t(BZH) B VOL+ 0.5V t(BHZ) 50% VOH - 0.5 V GND 2 Figure 19. Driver Enable/Disable Test, D at Logic Low Test Circuit and Waveforms Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 13 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com RL= 110 W 0V A VIN = 3. 0V CL = 50 pF t(AHZ) t(AZH) B R = 110 W DE Signal Generator 1.5 V DE D A VCC2 VOA VOB 50 W GND 1 VOH -0.5 V 50 % t(BZL) C L = 50 pF t(BLZ) B VOL 0.5 V 50 % GND 2 Figure 20. Driver Enable/Disable Test, D at Logic High Test Circuit and Waveforms VCC1 GALVANIC ISOLATION VIN = VCC1 VCC2 D DE Signal Generator tpDE_HL tpDE_LH CL = 15 pF ± 20% 50 % 50 % ISODE 50 W GND 1 50 % 50 % DE ISODE GND 2 Figure 21. DE to ISODE Prop Delay Test Circuit and Waveforms IO V ID VO Figure 22. Receiver DC Parameter Definitions Signal Generator Input B 50 W PRR=100 kHz, 50% duty cycle, t r <6ns, t f <6ns, ZO = 50 W Signal Generator A R VID B C L = 15 pF (includes probe and jig capacitance) 50 W 1.5 V 50% IO Input A 0V tpLH VO tpHL V OH 90% Output 1.5 V 10% tr tf V OL Figure 23. Receiver Switching Test Circuit and Waveforms 14 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 VCC D VCC DE A 3V RE 54 W 1.5 V 1.5 V B 0V tpZH 1 kW R tpHZ 0V VOH -0.5 V C L = 15 pF Signal Generator 1.5 V (includes probe and jig capacitance) RE VO R GND 50 W PRR=100 kHz, 50% duty cycle, tr<6ns, t f <6ns, ZO = 50 W Figure 24. Receiver Enable Test Circuit and Waveforms, Data Output High 0V D VCC DE A 3V RE 54 W B 1.5 V 0V R tpLZ tpZL 1 kW VCC1 VOH R 1.5 V C L = 15 pF VOL +0.5 V (includes probe and jig capacitance) RE Signal Generator 1.5 V VOL 50 W PRR=100 kHz, 50% duty cycle, tr<6ns, t f <6ns, Z O = 50 W Figure 25. Receiver Enable Test Circuit and Waveforms, Data Output Low A VINPUT freq = 1 to 50 MHz ampl. = ±5 V 100 nF 50 W 470 nF R B RE 50 W 2.2 kW DE V R Scope 2.2 kW D VOFFSET = -2V to7V Scope GND VCC 100 nF Figure 26. Common-Mode Rejection Test Circuit Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 15 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com C = 0.1 mF VCC1 ±1% DE 2.0V GND 1 VCC2 C = 0.1 mF ±1% A D S1 54 W B VOH or VOL 0.8V R VOH or VOL Success / fail criterion : stabile VOH or V OL outputs. RE 1 kW GND1 GND2 CL=15 pF (includes probe and jig capacitance) VTEST Figure 27. Common-Mode Transient Immunity Test Circuit tf_D tr_D 90% D1 10% tBBM tBBM 90 % D2 10 % tf_D tr_D Figure 28. Transition Times and Break-Before-Make Time Delay for D1, D2 Outputs 16 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 8 Detailed Description 8.1 Overview The ISO1176T is an isolated half-duplex differential line transceiver that meets the requirements of EN 50170 and TIA/EIA 485/422 applications. It has integrated transformer driver for convenient secondary power supply design. The device is rated to provide galvanic isolation of up to 4242 VPK per VDE and 2500 VRMS per UL 1577. The device has active-high driver enable and active-low receiver enable functions to control the data flow. It has maximum data transmission speed of 40 Mbps. When the driver enable pin, DE, is logic high, the differential outputs A and B follow the logic states at data input D. A logic high at D causes A to turn high and B to turn low. In this case, the differential output voltage defined as VOD = V(A) – V(B) is positive. When D is low, the output states reverse, B turns high, A becomes low, and VOD is negative. When DE is low, both outputs turn high-impedance. In this condition, the logic state at D is irrelevant. The DE pin has an internal pulldown resistor to ground, thus when left open the driver is disabled (highimpedance) by default. The D pin has an internal pullup resistor to VCC, thus, when left open while the driver is enabled, output A turns high and B turns low. When the receiver enable pin, RE, is logic low, the receiver is enabled. When the differential input voltage defined as VID = V(A) – V(B) is positive and higher than the positive input threshold, VIT+, the receiver output, R, turns high. When VID is negative and lower than the negative input threshold, VIT– , the receiver output, R, turns low. If VID is between VIT+ and VIT– the output is indeterminate. When RE is logic high or left open, the receiver output is high-impedance and the magnitude and polarity of VID are irrelevant. Internal biasing of the receiver inputs causes the output to go failsafe-high when the transceiver is disconnected from the bus (open-circuit), the bus lines are shorted (short-circuit), or the bus is not actively driven (idle bus). 8.2 Functional Block Diagram D2 R RE 1 2 5 6 8 D DE 7 OSC GALVANIC ISOLATIO N D1 13 B 12 A 10 ISODE Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 17 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 8.3 Feature Description 8.3.1 Insulation and Safety-Related Specifications for 16-DW Package over recommended operating conditions (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Minimum air gap (Clearance) (1) Shortest terminal to terminal distance through air 8 mm L(I02) Minimum external tracking (Creepage) (1) Shortest terminal to terminal distance across the package surface 8 mm CTI Comparative Tracking Index (Tracking resistance) DIN EN 60112 (VDE 0303-11); IEC 60112 400 DTI Distance through the insulation Minimum Internal Gap (Internal Clearance) 0.008 RIO Isolation resistance Input to output, VIO = 500 V, all pins on each side of the barrier tied together creating a two-terminal device, TA = 25 °C >1012 Ω CIO Barrier capacitance Input to output VIO = VCC/2 + 0.4 sin (2πft), f = 1MHz, VCC = 5 V 2 pF CI Input capacitance to ground VI = 0.4 sin (2πft), f = 1MHz 2 pF L(I01) (1) V mm Creepage and clearance requirements should be applied according to the specific equipment isolation standards of an application. Care should be taken to maintain the creepage and clearance distance of a board design to make sure that the mounting pads of the isolator on the printed circuit board do not reduce this distance. Techniques such as inserting grooves and/or ribs on a printed circuit board are used to help increase these specifications. 8.3.2 IEC 60664-1 Ratings Table PARAMETER TEST CONDITIONS SPECIFICATION Material group II Overvoltage category / Installation classification for basic insulation Rated mains voltage ≤ 150Vrms I-IV Rated mains voltage ≤ 300Vrms I-III 8.3.3 DIN V VDE V 0884-10 Insulation Characteristics (1) over recommended operating conditions (unless otherwise noted) PARAMETER VIORM TEST CONDITIONS Maximum working isolation voltage VPR Input to output test voltage SPECIFICATION UNIT 566 VPK Method b1, VPR = VIORM × 1.875, 100% Production test with t = 1s, Partial discharge < 5pC 1062 Method a, After environmental tests subgroup 1, VPR = VIORM × 1.6, t = 10s, Partial discharge < 5pC 906 After Input/Output Safety Test Subgroup 2/3, VPR = VIORM x 1.2, t = 10s, Partial discharge < 5pC 680 VPK VIOTM Maximum transient isolation voltage t = 60s (qualification), t = 1s (100% production) 4242 VPK VIOSM Maximum surge isolation voltage Tested per IEC 60065, 1.2/50 µs waveform, VTEST = 1.3 x VIOSM = 4000 VPK (Qualification Test) 3077 VPK RS Insulation resistance VIO = 500V at TS = 150°C > 109 Ω Pollution degree (1) 18 2 Climatic Classification 40/125/21 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 8.3.4 Regulatory Information VDE CSA UL Certified according to DIN V VDE V 0884- Approved according to CSA Component 10 (VDE V 0884-10):2006-12 Acceptance Notice 5A, IEC 60950-1 and IEC 61010-1 Approved under UL 1577 Component Recognition Program Basic Insulation Maximum Transient Isolation Voltage, 4242 VPK Maximum Surge Isolation Voltage, 3077 VPK Maximum Working Voltage, 566 VPK 3000 VRMS Isolation Rating; Reinforced insulation per CSA 61010-1-04 and IEC 61010-1 2nd Ed. 150 VRMS working voltage; Basic insulation per CSA 61010-1-04 and IEC 61010-1 2nd Ed. 600 VRMS working voltage; Basic insulation per CSA 60950-1-07 and IEC 60950-1 2nd Ed. 760 VRMS working voltage Single Protection, 2500 VRMS (1) Certificate Number: 40016131 Master Contract Number: 220991 File Number: E181974 (1) Production tested ≥ 3000 Vrms for 1 second in accordance with UL 1577. 8.3.5 Safety Limiting Values Safety limiting intends to prevent potential damage to the isolation barrier upon failure of input or output circuitry. A failure of the IO can allow low resistance to ground or the supply and, without current limiting, dissipate sufficient power to overheat the die and damage the isolation barrier potentially leading to secondary system failures. PARAMETER TEST CONDITIONS IS Safety input, output, or supply current DW-16 TS Maximum safety temperature DW-16 MIN θJA = 76°C/W, VI = 5.5 V, TJ = 170°C, TA = 25°C TYP MAX UNIT 347 mA 150 °C The safety-limiting constraint is the maximum junction temperature specified for the device. The power dissipation and junction-to-air thermal impedance of the device installed in the application hardware determines the junction temperature. The assumed junction-to-air thermal resistance in the Thermal Characteristics table is that of a device installed on a High-K Test Board for Leaded Surface Mount Packages. The power is the recommended maximum input voltage times the current. The junction temperature is then the ambient temperature plus the power times the junction-to-air thermal resistance. 400 VCC1 = VCC2 = 5.5 V Safety Limiting Current - mA 350 300 250 200 150 100 50 0 50 100 Temperature - °C 150 200 Figure 29. Thermal Derating Curve per VDE Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 19 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 8.4 Device Functional Modes Table 1 and Table 2 are the function tables for the ISO1176T driver and receiver. Table 1. Driver Function Table (1) (1) VCC1 VCC2 INPUT (D) ENABLE INPUT (DE) ENABLE OUTPUT (ISODE) OUTPUTS PU PU H H H H L PU PU L H H L H PU PU X L L Z Z PU PU X open L Z Z PU PU open H H H L PD PU X X L Z Z PU PD X X L Z Z PD PD X X L Z Z A B PU = Powered Up, PD = Powered Down, H = High Level, L= Low Level, X = Don't Care, Z = High Impedance (off) Table 2. Receiver Function Table (1) (1) 20 VCC1 VCC2 DIFFERENTIAL INPUT VID = (VA – VB) ENABLE (RE) OUTPUT (R) PU PU –0.01V ≤ VID L H PU PU -0.2V < VID < –0.01V L ? PU PU VID ≤ –0.2V L L PU PU X H Z PU PU X open Z PU PU Open circuit L H PU PU Short Circuit L H PU PU Idle (terminated) bus L H PD PU X X Z PU PD X L H PD PD X X Z PU = Powered Up, PD = Powered Down, H = High Level, L= Low Level, X = Don’t Care, Z = High Impedance (off), ? = Indeterminate Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 8.4.1 Device I/O Schematics DE Input D , RE Input V CC1 V CC1 V CC1 V CC1 V CC1 1 MW 500 W 500 W 1 MW ISODE Output 3 .3 -V R Output V CC2 V CC1 5.5 W 4W 11 W 6.4 W 5 -V R Output V CC1 5.5 W 11 W Figure 30. Equivalent Circuit Schematics Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 21 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com A Input B Input V CC2 V CC2 16V 90 kW Input 16V 16V 18 k W 90 kW Input 18 kW 18 kW 16V 18 kW A and B Outputs V CC2 16V Output 16V Figure 31. Equivalent Circuit Schematics 22 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 9 Application and Implementation NOTE Information in the following applications sections is not part of the TI component specification, and TI does not warrant its accuracy or completeness. TI’s customers are responsible for determining suitability of components for their purposes. Customers should validate and test their design implementation to confirm system functionality. 9.1 Application Information The ISO1176T device consists of a RS-485 transceiver, commonly used for asynchronous data transmissions. For half-duplex transmission, only one pair is shared for both transmission and reception of data. To eliminate line reflections, each cable end is terminated with a termination resistor, R(T), whose value matches the characteristic impedance, Z0, of the cable. This method, known as parallel termination, allows for higher data rates over longer cable length. R R R R R R RE A RE A RE A DE B DE B DE B D D D a) Independent driver and receiver enable signals D D b) Combined enable signals for use as directional control pin D c) Receiver always on Figure 32. Half-Duplex Transceiver Configurations 9.2 Typical Application X-FMR 4 8 3 2 7 6 1 5 LDO D1 1 C4 C5 3 2 C1 OUT IN 5 C6 EN GND NC 4 D2 1 2 4 C2 3 5 6 Control Circuitry D1 VCC2 16 C3 Isolated Supply to other Components D2 VCC1 B GND1 A R ISODE 13 12 10 Profibus Interface RE 7 DE GND2 D GND2 8 14, 15 9, 11 Figure 33. Typical Application Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 23 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com Typical Application (continued) 9.2.1 Design Requirements RS-485 is a robust electrical standard suitable for long-distance networking that may be used in a wide range of applications with varying requirements, such as distance, data rate, and number of nodes. Table 3. Design Parameters PARAMETER VALUE Pullup and Pulldown Resistors 1 kΩ to 10 kΩ Decoupling Capacitors 100 nF 9.2.2 Detailed Design Procedure 9.2.2.1 Transient Voltages Isolation of a circuit insulates it from other circuits and earth so that noise develops across the insulation rather than circuit components. The most common noise threat to data-line circuits is voltage surges or electrical fast transients that occur after installation and the transient ratings of ISO1176T are sufficient for all but the most severe installations. However, some equipment manufacturers use their ESD generators to test transient susceptibility of their equipment and can exceed insulation ratings. ESD generators simulate static discharges that may occur during device or equipment handling with low-energy but high voltage transients. Figure 34 models the ISO1176T bus IO connected to a noise generator. CIN and RIN is the device and any other stray or added capacitance or resistance across the A or B pin to GND2, CISO and RISO is the capacitance and resistance between GND1 and GND2 of ISO1176T plus those of any other insulation (transformer, or similar), and we assume stray inductance negligible. From this model, the voltage at the isolated bus return is shown in Equation 1: Z ISO vGND2 = vN ZISO + ZIN (1) and will always be less than 16 V from VN. If ISO1176T is tested as a stand-alone device, RIN = 6 × 104Ω, CIN = 16 × 10-12 F, RISO = 109Ω and CISO = 10-12 F. SPACER Note from Figure 34 that the resistor ratio determines the voltage ratio at low frequency and it is the inverse capacitance ratio at high frequency. In the stand-alone case and for low frequency, as shown in Equation 2, vGND2 RISO 109 = = vN RISO + RIN 109 + 6 ´ 104 (2) or essentially all of noise appears across the barrier. At high frequency, as shown in Equation 3, 1 v GND2 CISO 1 1 = = = = 0.94 1 1 1 CISO vN + 1+ 1+ 16 CISO CIN CIN (3) and 94% of VN appears across the barrier. As long as RISO is greater than RIN and CISO is less than CIN, most of transient noise appears across the isolation barrier, as it should. We recommend the reader not test equipment transient susceptibility with ESD generators or consider product claims of ESD ratings above the barrier transient ratings of an isolated interface. ESD is best managed through recessing or covering connector pins in a conductive connector shell and installer training. 24 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 A,B, Y, or Z C IN R IN VN 16 V Bus Return(GND2) C ISO R ISO System Ground (GND1) Figure 34. Noise Model 9.2.3 Application Curve At maximum working voltage, ISO1176T isolation barrier has more than 28 years of life. WORKING LIFE -- YEARS 100 VIORM at 566 VPK 28 10 0 120 250 500 750 880 1000 WORKING VOLTAGE (V IORM ) -- VPK Figure 35. Time-Dependent Dielectric Breakdown Test Results Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 25 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 10 Power Supply Recommendations To ensure reliable operation at all data rates and supply voltages, TI recommends a 0.1-µF bypass capacitor at input and output supply pins (VCC1 and VCC2). The capacitors should be placed as close to the supply pins as possible. This device is used in applications where only a single primary-side power supply is available. Isolated power can be generated for the secondary-side with the help of integrated transformer driver. 11 Layout 11.1 Layout Guidelines ON-chip IEC-ESD protection is good for laboratory and portable equipment but never sufficient for EFT and surge transients occurring in industrial environments. Therefore, robust and reliable bus node design requires the use of external transient protection devices. Because ESD and EFT transients have a wide frequency bandwidth from approximately 3-MHz to 3-GHz, high-frequency layout techniques must be applied during PCB design. A minimum of four layers is required to accomplish a low EMI PCB design (see Figure 36). • Layer stacking should be in the following order (top-to-bottom): high-speed signal layer, ground plane, power plane, and low-frequency signal layer. • Placing a solid ground plane next to the high-speed signal layer establishes controlled impedance for transmission line interconnects and provides an excellent low-inductance path for the return current flow. • Placing the power plane next to the ground plane creates additional high-frequency bypass capacitance of approximately 100 pF/in2. • Routing the slower speed control signals on the bottom layer allows for greater flexibility as these signal links usually have margin to tolerate discontinuities such as vias. • Place the protection circuitry close to the bus connector to prevent noise transients from penetrating your board. • Use VCC and ground planes to provide low-inductance. High-frequency currents might follow the path of least inductance and not necessarily the path of least resistance. • Design the protection components into the direction of the signal path. Do not force the transient currents to divert from the signal path to reach the protection device. • Apply 0.1-µF bypass capacitors as close as possible to the VCC-pins of transceiver, UART, and controller ICs on the board. • Use at least two vias for VCC and ground connections of bypass capacitors and protection devices to minimize effective via-inductance. • Use 1-kΩ to 10-kΩ pullup and pulldown resistors for enable lines to limit noise currents in these lines during transient events. • Insert pulse-proof resistors into the A and B bus lines if the TVS clamping voltage is higher than the specified maximum voltage of the transceiver bus pins. These resistors limit the residual clamping current into the transceiver and prevent it from latching up. • While pure TVS protection is sufficient for surge transients up to 1 kV, higher transients require metal-oxide varistors (MOVs) which reduce the transients to a few hundred volts of clamping voltage, and transient blocking units (TBUs) that limit transient current to less than 1 mA. • Routing the high-speed traces on the top layer avoids the use of vias (and the introduction of their inductances) and allows for clean interconnects between the isolator and the transmitter and receiver circuits of the data link. If an additional supply voltage plane or signal layer is needed, add a second power and ground plane system to the stack to keep it symmetrical. This makes the stack mechanically stable and prevents it from warping. Also the power and ground plane of each power system can be placed closer together, thus increasing the high-frequency bypass capacitance significantly. NOTE For detailed layout recommendations, see Application Note Digital Isolator Design Guide, SLLA284. 26 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T ISO1176T www.ti.com SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 11.2 Layout Example High-speed traces 10 mils Ground plane 40 mils Keep this space free from planes, traces, pads, and vias FR-4 0r ~ 4.5 Power plane 10 mils Low-speed traces Figure 36. Recommended Layer Stack Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T 27 ISO1176T SLLSE28G – OCTOBER 2010 – REVISED OCTOBER 2015 www.ti.com 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation For related documentation see the following: • Isolated, 40-Mbps, 3.3-V to 5-V Profibus Interface (SLUU471) • Digital Isolator Design Guide (SLLA284) • Isolation Glossary (SLLA353) 12.2 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 12.3 Trademarks E2E is a trademark of Texas Instruments. Profibus is a registered trademark of Profibus International. All other trademarks are the property of their respective owners. 12.4 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 12.5 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. 13 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 28 Submit Documentation Feedback Copyright © 2010–2015, Texas Instruments Incorporated Product Folder Links: ISO1176T PACKAGE OPTION ADDENDUM www.ti.com 26-Mar-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) ISO1176TDW ACTIVE SOIC DW 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO1176T ISO1176TDWR ACTIVE SOIC DW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-2-260C-1 YEAR -40 to 85 ISO1176T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation of the previous line and the two combined represent the entire Device Marking for that device. (6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish value exceeds the maximum column width. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device ISO1176TDWR Package Package Pins Type Drawing SOIC DW 16 SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) 2000 330.0 16.4 Pack Materials-Page 1 10.75 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 10.7 2.7 12.0 16.0 Q1 PACKAGE MATERIALS INFORMATION www.ti.com 26-Mar-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) ISO1176TDWR SOIC DW 16 2000 367.0 367.0 38.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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