Micronas HAL805-1 Programmable linear hall-effect sensor Datasheet

Hardware
Documentation
Data Sheet
®
HAL 805
Programmable Linear
Hall-Effect Sensor
Edition Feb. 14, 2006
6251-513-3DS
HAL 805
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas Trademarks
– HAL
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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HAL 805
DATA SHEET
Contents
Page
Section
Title
4
4
4
5
5
5
5
5
5
1.
1.1.
1.2.
1.3.
1.3.1.
1.4.
1.5.
1.6.
1.7.
Introduction
Major Applications
Features
Marking Code
Special Marking of Prototype Parts
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability
Pin Connections and Short Descriptions
6
6
8
10
10
11
2.
2.1.
2.2.
2.3.
2.3.1.
2.3.2.
Functional Description
General Function
Digital Signal Processing and EEPROM
Calibration Procedure
General Procedure
Calibration of the Angle Sensor
13
13
17
17
17
18
18
18
19
20
21
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
3.8.
3.9.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Position of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics
Open Circuit Detection
Typical Characteristics
23
23
23
23
24
24
24
4.
4.1.
4.2.
4.3.
4.4.
4.5.
4.6.
Application Notes
Application Circuit
Use of two HAL805 in Parallel
Temperature Compensation
Undervoltage Behavior
Ambient Temperature
EMC and ESD
25
25
25
27
28
29
29
5.
5.1.
5.2.
5.3.
5.4.
5.5.
5.6.
Programming of the Sensor
Definition of Programming Pulses
Definition of the Telegram
Telegram Codes
Number Formats
Register Information
Programming Information
30
6.
Data Sheet History
Micronas
Feb. 14, 2006; 6251-513-3DS
3
HAL 805
DATA SHEET
Programmable Linear Hall Effect Sensor
easily be done with a PC and the application kit from
Micronas.
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL805 is a recent member of the Micronas family of programmable linear Hall sensors. It offers opencircuit detection and individual programming of different sensors which are in parallel to the same supply
voltage.
The HAL805 is an universal magnetic field sensor with
a linear output based on the Hall effect. The IC is
designed and produced in sub-micron CMOS technology and can be used for angle or distance measurements if combined with a rotating or moving magnet.
The major characteristics like magnetic field range,
sensitivity, output quiescent voltage (output voltage at
B = 0 mT), and output voltage range are programmable in a non-volatile memory. The sensor has a ratiometric output characteristic, which means that the output voltage is proportional to the magnetic flux and the
supply voltage.
The HAL805 features a temperature-compensated
Hall plate with choppered offset compensation, an A/D
converter, digital signal processing, a D/A converter
with output driver, an EEPROM memory with redundancy and lock function for the calibration data, a
serial interface for programming the EEPROM, and
protection devices at all pins. The internal digital signal
processing is of great benefit because analog offsets,
temperature shifts, and mechanical stress do not
degrade the sensor accuracy.
The sensor is designed for hostile industrial and automotive applications and operates with typically 5 V
supply voltage in the ambient temperature range from
−40 °C up to 150 °C. The HAL805 is available in the
very small leaded packages TO92UT-1 and
TO92UT-2.
1.1. Major Applications
Due to the sensor’s versatile programming characteristics, the HAL805 is the optimal system solution for
applications such as:
– contactless potentiometers,
– angle sensors,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– high-precision linear Hall effect sensor with
ratiometric output and digital signal processing
– multiple programmable magnetic characteristics in a
non-volatile memory (EEPROM) with redundancy
and lock function
– open-circuit detection (ground and supply line break
detection)
– for programming an individual sensor within several
sensors in parallel to the same supply voltage, a
selection can be done via the output pin
The HAL805 is programmable by modulating the supply voltage. No additional programming pin is needed.
The easy programmability allows a 2-point calibration
by adjusting the output voltage directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer’s manufacturing process is possible. With this
calibration procedure, the tolerances of the sensor, the
magnet, and the mechanical positioning can be compensated in the final assembly. This offers a low-cost
alternative for all applications that presently need
mechanical adjustment or laser trimming for calibrating
the system.
– temperature characteristics are programmable for
matching all common magnetic materials
In addition, the temperature compensation of the Hall
IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high
accuracy.
– overvoltage and reverse-voltage protection at all
pins
The calculation of the individual sensor characteristics
and the programming of the EEPROM memory can
4
– programmable clamping function
– programming through a modulation of the supply
voltage
– operates from −40 °C up to 150 °C
ambient temperature
– operates from 4.5 V up to 5.5 V supply voltage in
specification and functions up to 8.5 V
– operates with static magnetic fields and dynamic
magnetic fields up to 2 kHz
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
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HAL 805
DATA SHEET
1.3. Marking Code
1.5. Hall Sensor Package Codes
The HAL805 has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
HALXXXPA-T
Type
HAL805
Temperature Range: A or K
Package: UT for TO92UT-1/-2
Type: 805
Temperature Range
A
K
805A
805K
Example: HAL805UT-K
1.3.1. Special Marking of Prototype Parts
Prototype parts are coded with an underscore beneath
the temperature range letter on each IC. They may be
used for lab experiments and design-ins but are not
intended to be used for qualification tests or as production parts.
→ Type:
805
→ Package:
TO92UT
→ Temperature Range: TJ = −40°C to +140°C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability
1.4. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
A: TJ = −40 °C to +170 °C
K: TJ = −40 °C to +140 °C
Solderability is guaranteed for one year from the date
code on the package.
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.5.
on page 24.
1.7. Pin Connections and Short Descriptions
Pin
No.
Pin Name
Type
Short Description
1
VDD
IN
Supply Voltage and
Programming Pin
2
GND
3
OUT
1
Ground
OUT
Push Pull Output
and Selection Pin
VDD
OUT
3
2
GND
Fig. 1–1: Pin configuration
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HAL 805
DATA SHEET
2. Functional Description
analog output is switched off during the communication.
2.1. General Function
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is converted to a digital
value, processed in the Digital Signal Processing Unit
(DSP) according to the settings of the EEPROM registers, converted to an analog voltage with ratiometric
behavior, and stabilized by a push-pull output transistor stage. The function and the parameters for the DSP
are explained in Section 2.2. on page 8.
Several sensors in parallel to the same supply and
ground line can be programmed individually. The
selection of each sensor is done via its output pin.
The open-circuit detection provides a defined output
voltage if the VDD or GND line is broken. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal changes in accuracy and
high offset stability. The circuitry also rejects offset
shifts due to mechanical stress from the package. The
non-volatile memory consists of redundant EEPROM
cells. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at all pins.
The setting of the LOCK register disables the programming of the EEPROM memory for all time. This register cannot be reset.
VDD (V)
As long as the LOCK register is not set, the output
characteristic can be adjusted by programming the
EEPROM registers. The IC is addressed by modulating the supply voltage (see Fig. 2–1). In the supply
voltage range from 4.5 V up to 5.5 V, the sensor generates an analog output voltage. After detecting a
command, the sensor reads or writes the memory and
answers with a digital signal on the output pin. The
HAL
805
VDD
8
VOUT (V)
The HAL805 is a monolithic integrated circuit which
provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
7
6
5
VDD
OUT
digital
analog
GND
Fig. 2–1: Programming with VDD modulation
VDD
Internally
stabilized
Supply and
Protection
Devices
Switched
Hall Plate
Temperature
Dependent
Bias
A/D
Converter
Open
Circuit
Detection
Oscillator
Digital
Signal
Processing
D/A
Converter
100 Ω
OUT
10 kΩ
EEPROM Memory
Supply
Level
Detection
Analog
Output
Protection
Devices
Digital
Output
Lock Control
GND
Fig. 2–2: HAL805 block diagram
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HAL 805
DATA SHEET
ADC-READOUT Register
14 bit
Digital
Output
Digital Signal Processing
A/D
Converter
TC
TCSQ
6 bit
5 bit
Digital
Filter
Multiplier
Adder
Limiter
D/A
Converter
MODE Register
RANGE FILTER
3 bit
3 bit
SENSITIVITY
VOQ
CLAMPLOW
CLAMPHIGH
LOCKR
14 bit
11 bit
10 bit
11 bit
1 bit
Micronas
Registers
EEPROM Memory
Lock
Control
Fig. 2–3: Details of EEPROM and Digital Signal Processing
Range = 30 mT
Filter = 500 Hz
V
5
Range = 100 mT
Filter = 2 kHz
V
5
Clamp-high = 4.5 V
VOUT
Clamp-high = 4 V
4
VOUT
Sensitivity = 0.116
3
4
3
Sensitivity = −1.36
VOQ = −0.5 V
VOQ = 2.5 V
2
2
1
1
Clamp-low = 1 V
0
−40
−20
Clamp-low = 0.5 V
0
20
0
−150 −100 −50
40 mT
B
50
100
150 mT
B
Fig. 2–4: Example for output characteristics
Micronas
0
Fig. 2–5: Example for output characteristics
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HAL 805
DATA SHEET
2.2. Digital Signal Processing and EEPROM
The DSP is the main part of this sensor and performs
the signal conditioning. The parameters for the DSP
are stored in the EEPROM registers. The details are
shown in Fig. 2–3.
Filter = 2 kHz
2000
ADC- 1500
READOUT
Terminology:
SENSITIVITY: name of the register or register value
Sensitivity:
1000
name of the parameter
500
The EEPROM registers consist of three groups:
Group 1 contains the registers for the adaption of the
sensor to the magnetic system: MODE for selecting
the magnetic field range and filter frequency, TC and
TCSQ for the temperature characteristics of the magnetic sensitivity.
Group 2 contains the registers for defining the output
characteristics: SENSITIVITY, VOQ, CLAMP-LOW,
and CLAMP-HIGH. The output characteristic of the
sensor is defined by these 4 parameters (see Fig. 2–4
and Fig. 2–5 for examples).
– The parameter VOQ (Output Quiescent Voltage) corresponds to the output voltage at B = 0 mT.
– The parameter Sensitivity defines the magnetic sensitivity:
Sensitivity =
ΔVOUT
−500
−1000
Range 150 mT
Range 90 mT
−1500
Range 60 mT
Range 30 mT
−2000
−200
−100
0
100
200 mT
B
Fig. 2–6: Typical ADC-READOUT
versus magnetic field for filter = 2 kHz
ΔB
– The output voltage can be calculated as:
VOUT ∼ Sensitivity × B + VOQ
The output voltage range can be clamped by setting
the registers CLAMP-LOW and CLAMP-HIGH in order
to enable failure detection (such as short-circuits to
VDD or GND and open connections).
Group 3 contains the Micronas registers and LOCK for
the locking of all registers. The Micronas registers are
programmed and locked during production and are
read-only for the customer. These registers are used
for oscillator frequency trimming, A/D converter offset
compensation, and several other special settings.
An external magnetic field generates a Hall voltage on
the Hall plate. The ADC converts the amplified positive
or negative Hall voltage (operates with magnetic north
and south poles at the branded side of the package) to
a digital value. Positive values correspond to a magnetic north pole on the branded side of the package.
The digital signal is filtered in the internal low-pass filter and is readable in the ADC-READOUT register.
Depending on the programmable magnetic range of
the Hall IC, the operating range of the A/D converter is
from −30 mT...+30 mT up to −150 mT...+150 mT.
8
0
During further processing, the digital signal is multiplied with the sensitivity factor, added to the quiescent
output voltage and limited according to the clamping
voltage. The result is converted to an analog signal
and stabilized by a push-pull output transistor stage.
The ADC-READOUT at any given magnetic field
depends on the programmed magnetic field range but
also on the filter frequency. Fig. 2–6 shows the typical
ADC-READOUT values for the different magnetic field
ranges with the filter frequency set to 2 kHz. The relationship between the minimum and maximum ADCREADOUT values and the filter frequency setting is
listed in the following table.
Filter Frequency
ADC-READOUT RANGE
80 Hz
−3968...3967
160 Hz
−1985...1985
500 Hz
−5292...5290
1 kHz
−2646...2645
2 kHz
−1512...1511
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HAL 805
DATA SHEET
TC and TCSQ
Note: During application design, it should be taken
into consideration that the maximum and minimum ADC-READOUT is not exceeded during
calibration and operation of the Hall IC. Consequently, the maximum and minimum magnetic
fields that may occur in the operational range
of a specific application should not saturate the
A/D converter. Please note that the A/D converter saturates at magnetic fields well above,
respectively below, the magnetic range limits.
This large safety band between specified magnetic range and true operational range helps to
avoid any saturation.
Range
The RANGE bits are the three lowest bits of the MODE
register; they define the magnetic field range of the A/
D converter.
Magnetic Field Range
RANGE
−30 mT...30 mT
0
−40 mT...40 mT
4
−60 mT...60 mT
5
−75 mT...75 mT
1
−80 mT...80 mT
6
−90 mT...90 mT
2
−100 mT...100 mT
7
−150 mT...150 mT
3
For all calculations, the digital value from the magnetic
field of the A/D converter is used. This digital information is readable from the ADC-READOUT register.
Sensitivity =
80 Hz
0
160 Hz
1
500 Hz
2
1 kHz
3
2 kHz
4
Micronas
ΔVOUT * 2048
ΔADC-READOUT * VDD
VOQ
The FILTER bits are the three highest bits of the
MODE register; they define the −3 dB frequency of the
digital low pass filter.
FILTER
Sensitivity
The SENSITIVITY register contains the parameter for
the multiplier in the DSP. The Sensitivity is programmable between −4 and 4. For VDD = 5 V, the register
can be changed in steps of 0.00049. Sensitivity = 1
corresponds to an increase of the output voltage by
VDD if the ADC-READOUT increases by 2048.
Filter
−3 dB Frequency
The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in
order to compensate for the change of the magnetic
strength with temperature. The adaption is done by
programming the TC (Temperature Coefficient) and
the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can
be matched to the magnet and the sensor assembly.
As a result, the output voltage characteristic can be
fixed over the full temperature range. The sensor can
compensate for linear temperature coefficients ranging
from about −3100 ppm/K up to 400 ppm/K and quadratic coefficients from about −5 ppm/K² to 5 ppm/K².
Please refer to Section 4.3. on page 23 for the recommended settings for different linear temperature coefficients.
The VOQ register contains the parameter for the adder
in the DSP. VOQ is the output voltage without external
magnetic field (B = 0 mT, respectively ADC-READOUT
= 0) and programmable from −VDD up to VDD. For VDD
= 5 V, the register can be changed in steps of 4.9 mV.
Note: If VOQ is programmed to a negative voltage, the
maximum output voltage is limited to:
VOUTmax = VOQ + VDD
For calibration in the system environment, a 2-point
adjustment procedure (see Section 2.3.) is recommended. The suitable Sensitivity and VOQ values for
each sensor can be calculated individually by this procedure.
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HAL 805
DATA SHEET
Clamping Voltage
2.3. Calibration Procedure
The output voltage range can be clamped in order to
detect failures like shorts to VDD or GND or an open
circuit.
2.3.1. General Procedure
The CLAMP-LOW register contains the parameter for
the lower limit. The lower clamping voltage is programmable between 0 V and VDD/2. For VDD = 5 V, the register can be changed in steps of 2.44 mV.
The CLAMP-HIGH register contains the parameter for
the upper limit. The upper clamping voltage is programmable between 0 V and VDD. For VDD = 5 V, in
steps of 2.44 mV.
LOCKR
By setting this 1-bit register, all registers will be locked,
and the sensor will no longer respond to any supply
voltage modulation. This bit is active after the first
power-off and power-on sequence after setting the
LOCK bit.
For calibration in the system environment, the application kit from Micronas is recommended. It contains the
hardware for the generation of the serial telegram for
programming and the corresponding software for the
input of the register values.
In this section, programming of the sensor using this
programming tool is explained. Please refer to
Section 5. on page 25 for information about programming without this tool.
For the individual calibration of each sensor in the customer application, a two point adjustment is recommended (see Fig. 2–7 for an example). When using
the application kit, the calibration can be done in three
steps:
Step 1: Input of the registers which need not be
adjusted individually
The magnetic circuit, the magnetic material with its
temperature characteristics, the filter frequency, and
low and high clamping voltage are given for this application.
Warning: This register cannot be reset!
ADC-READOUT
Therefore, the values of the following registers should
be identical for all sensors of the customer application.
This 14-bit register delivers the actual digital value of
the applied magnetic field before the signal processing. This register can be read out and is the basis for
the calibration procedure of the sensor in the system
environment.
– FILTER
(according to the maximum signal frequency)
– RANGE
(according to the maximum magnetic field at the
sensor position)
– TC and TCSQ
(depends on the material of the magnet and the
other temperature dependencies of the application)
– CLAMP-LOW and CLAMP-HIGH
(according to the application requirements)
Write the appropriate settings into the HAL805 registers.
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DATA SHEET
Step 2: Calculation of VOQ and Sensitivity
2.3.2. Calibration of the Angle Sensor
The calibration points 1 and 2 can be set inside the
specified range. The corresponding values for VOUT1
and VOUT2 result from the application requirements.
The following description explains the calibration procedure using an angle sensor as an example. The
required output characteristic is shown in Fig. 2–7.
Low clamping voltage ≤ VOUT1,2 ≤ High clamping voltage
– the angle range is from −25° to 25°
– temperature coefficient of the magnet: −500 ppm/K
For highest accuracy of the sensor, calibration points
near the minimum and maximum input signal are recommended. The difference of the output voltage
between calibration point 1 and calibration point 2
should be more than 3.5 V.
Set the system to calibration point 1 and read the register ADC-READOUT. The result is the value ADCREADOUT1.
V
5
Clamp-high = 4.5 V
Calibration point 1
VOUT
4
Now, set the system to calibration point 2, read the
register ADC-READOUT again, and get the value
ADC-READOUT2.
3
With these values and the target values VOUT1 and
VOUT2, for the calibration points 1 and 2, respectively,
the values for Sensitivity and VOQ are calculated as:
2
Sensitivity =
VOUT1 − VOUT2
ADC-READOUT1 − ADC-READOUT2
*
2048
VDD
1
VOQ = VOUT1 −
Clamp-low = 0.5 V
ADC-READOUT1 * Sensitivity * VDD
2048
Calibration point 2
0
−30
This calculation has to be done individually for each
sensor.
−20
−10
0
10
20
30 °
Angle
Next, write the calculated values for Sensitivity and
VOQ into the IC for adjusting the sensor.
Fig. 2–7: Example for output characteristics
The sensor is now calibrated for the customer application. However, the programming can be changed again
and again if necessary.
Step 3: Locking the Sensor
The last step is activating the LOCK function with the
“LOCK” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Warning: This register cannot be reset!
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HAL 805
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Step 1: Input of the registers which need not be
adjusted individually
The register values for the following registers are given
for all applications:
– FILTER
Select the filter frequency: 500 Hz
– RANGE
Select the magnetic field range: 30 mT
– TC
For this magnetic material: 6
Software Calibration:
Use the menu CALIBRATE from the PC software and
enter the values 4.5 V for VOUT1 and 0.5 V for VOUT2.
Set the system to calibration point 1 (angle 1 = −25°),
hit the button “Read ADC-Readout1”, set the system to
calibration point 2 (angle 2 = 25°), hit the button “Read
ADC-Readout2”, and hit the button “Calculate”. The
software will then calculate the appropriate VOQ and
Sensitivity.
– TCSQ
For this magnetic material: 14
This calculation has to be done individually for each
sensor. Now, write the calculated values with the “write
and store” command into the HAL805 for programming the sensor.
– CLAMP-LOW
For our example: 0.5 V
Step 3: Locking the Sensor
– CLAMP-HIGH
For our example: 4.5 V
Enter these values in the software, and use the “write
and store” command for permanently writing the values in the registers.
The last step is activating the LOCK function with the
“LOCK” command. Please note that the LOCK function
becomes effective after power-down and power-up of
the Hall IC. The sensor is now locked and does not
respond to any programming or reading commands.
Step 2: Calculation of VOQ and Sensitivity
Warning: This register cannot be reset!
There are two ways to calculate the values for VOQ
and Sensitivity.
Manual Calculation:
Set the system to calibration point 1 (angle 1 = −25°)
and read the register ADC-READOUT. For our example, the result is ADC-READOUT1 = −2500.
Next, set the system to calibration point 2 (angle 2 =
25°), and read the register ADC-READOUT again. For
our example, the result is ADC-READOUT2 = +2350.
With these measurements and the targets VOUT1 =
4.5 V and VOUT2 = 0.5 V, the values for Sensitivity and
VOQ are calculated as
Sensitivity =
VOQ = 4.5 V −
12
4.5 V − 0.5 V
−2500 − 2350
*
2048
= −0.3378
5V
−2500 * (−0.3378) * 5 V
= 2.438 V
2048
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HAL 805
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
TO92UT-2: Plastic Transistor Standard UT package, 3 leads, not spread
Weight approximately 0.12 g
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HAL 805
DATA SHEET
Fig. 3–2:
TO92UT-1: Plastic Transistor Standard UT package, 3 leads, spread
Weight approximately 0.12 g
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HAL 805
DATA SHEET
Fig. 3–3:
TO92UT-2: Dimensions ammopack inline
Micronas
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HAL 805
DATA SHEET
Fig. 3–4:
TO92UT-1: Dimensions ammopack inline, spread
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HAL 805
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm x 0.25 mm
3.3. Position of Sensitive Areas
TO92UT-1/-2
x
center of the package
y
1.5 mm nominal
Bd
0.3 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−8.5
8.5
V
VDD
Supply Voltage
1
−14.41) 2)
14.41) 2)
V
−IDD
Reverse Supply Current
1
−
501)
mA
VOUT
Output Voltage
3
−55)
−55)
8.53)
14.43) 2)
V
VOUT − VDD
Excess of Output Voltage
over Supply Voltage
3,1
−
2
V
IOUT
Continuous Output Current
3
−10
10
mA
tSh
Output Short Circuit Duration
3
−
10
min
TJ
Junction Temperature Range
−
−40
−40
1704)
150
°C
°C
NPROG
Number of Programming Cycles
−
−
100
1)
2)
3)
4)
5)
as long as TJmax is not exceeded
t < 10 min (VDDmin = −15 V for t < 1 min, VDDmax = 16 V for t < 1 min)
as long as TJmax is not exceeded, output is not protected to external 14 V-line (or to −14 V)
t < 1000h
internal protection resistor = 100 Ω
Micronas
Feb. 14, 2006; 6251-513-3DS
17
HAL 805
DATA SHEET
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteristics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
1
4.5
5
5.5
V
IOUT
Continuous Output Current
3
−1
−
1
mA
RL
Load Resistor
3
4.5
−
−
kΩ
CL
Load Capacitance
3
0.33
10
1000
nF
3.6. Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
IDD
Supply Current
over Temperature Range
1
−
7
10
mA
VDDZ
Overvoltage Protection
at Supply
1
−
17.5
20
V
IDD = 25 mA, TJ = 25 °C, t = 20 ms
VOZ
Overvoltage Protection
at Output
3
−
17
19.5
V
IO = 10 mA, TJ = 25 °C, t = 20 ms
Resolution
3
−
12
−
bit
ratiometric to VDD1)
INL
Non-Linearity of Output Voltage
over Temperature
3
−0.5
0
0.5
%
% of supply voltage2)
ER
Ratiometric Error of Output
over Temperature
(Error in VOUT / VDD)
3
−0.5
0
0.5
%
⎥ VOUT1 - VOUT2⎥ > 2 V
during calibration procedure
Ratiometricy of Output
over Temperature
3
99.5
100
100.5
%
⎥ VOUT1 - VOUT2⎥ > 2 V
during calibration procedure
3
−400
0
400
ppm/k
if TC and TCSQ suitable for the
application
V OUT ( V DD ) V OUT ( V DD = 5 V )
= ----------------------------- ⁄ --------------------------------------------5V
V DD
ΔTK
1)
2)
18
Variation of Linear Temperature
Coefficient
Output DAC full scale = 5 V ratiometric, Output DAC offset = 0 V, Output DAC LSB = VDD/4096
if more than 50% of the selected magnetic field range are used and the temperature compensation is suitable
Feb. 14, 2006; 6251-513-3DS
Micronas
HAL 805
DATA SHEET
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
ΔVOUTCL
Accuracy of Output Voltage at
Clamping Low Voltage over
Temperature Range
3
−45
0
45
mV
RL = 4.7 kΩ, VDD = 5 V
ΔVOUTCH
Accuracy of Output Voltage at
Clamping High Voltage over
Temperature Range
3
−45
0
45
mV
RL = 4.7 kΩ, VDD = 5 V
VOUTH
Output High Voltage
3
4.65
4.8
−
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
VOUTL
Output Low Voltage
3
−
0.2
0.35
V
VDD = 5 V, −1 mA ≤ IOUT ≤ 1mA
fADC
Internal ADC Frequency over
Temperature Range
−
110
128
150
kHz
VDD = 4.5 V to 8.5 V
tr(O)
Response Time of Output
3
−
5
4
2
1
10
8
4
2
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, time from 10% to 90% of
final output voltage for a steplike
signal Bstep from 0 mT to B max
td(O)
Delay Time of Output
3
−
0.1
0.5
ms
CL = 10 nF
tPOD
Power-Up Time (Time to reach
stabilized Output Voltage)
−
−
6
5
3
2
11
9
5
3
ms
ms
ms
ms
3 dB Filter frequency = 80 Hz
3 dB Filter frequency = 160 Hz
3 dB Filter frequency = 500 Hz
3 dB Filter frequency = 2 kHz
CL = 10 nF, 90% of VOUT
BW
Small Signal Bandwidth (−3 dB)
3
−
2
−
kHz
BAC < 10 mT;
3 dB Filter frequency = 2 kHz
VOUTn
Noise Output Voltagepp
3
−
3
6
mV
magnetic range = 90 mT1)
3 dB Filter frequency = 80 Hz
Sensitivity ≤ 0.26
ROUT
Output Resistance over
Recommended Operating Range
3
−
1
10
Ω
VOUTLmax ≤ VOUT ≤ VOUTHmin
RthJA
Thermal Resistance Junction to
Soldering Point
−
−
150
200
K/W
TO92UT-1,
TO92UT-2
1)
peak-to-peak value exceeded: 5%
3.7. Magnetic Characteristics
at TJ = −40 °C to +170 °C, VDD = 4.5 V to 5.5 V, GND = 0 V after programming and locking,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 5 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
BOffset
Magnetic Offset
3
−0.5
0
0.5
mT
B = 0 mT, IOUT = 0 mA, TJ = 25 °C
unadjusted sensor
ΔBOffset/ΔT
Magnetic Offset Change
due to TJ
−10
0
10
μT/K
B = 0 mT, IOUT = 0 mA
Micronas
Feb. 14, 2006; 6251-513-3DS
19
HAL 805
DATA SHEET
3.8. Open Circuit Detection
at TJ = −40 °C to +170 °C, Typical Characteristics for TJ = 25 °C, after locking the sensor
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
VOUT
Output voltage
at open VDD line
3
0
0
0.2
V
VDD = 5 V
RL = 10 kΩ to GND
VOUT
Output voltage at
open GND line
3
4.7
4.8
5
V
VDD = 5 V
RL = 10 kΩ to GND
20
Feb. 14, 2006; 6251-513-3DS
Micronas
HAL 805
DATA SHEET
3.9. Typical Characteristics
mA
20
mA
10
TA = 25 °C
VDD = 5 V
15
IDD
IDD
8
10
5
6
0
4
-5
TA = −40 °C
−10
TA = 25 °C
−15
2
TA = 150 °C
−20
−15 −10
−5
0
5
10
15
0
−1.5 −1.0 −0.5
20 V
0.0
0.5
VDD
1.0
1.5 mA
IOUT
Fig. 3–5: Typical current consumption
versus supply voltage
Fig. 3–7: Typical current consumption
versus output current
dB
5
mA
10
VDD = 5 V
0
IDD
VOUT
8
–3
–5
–10
6
–15
–20
4
2
–25
Filter: 80 Hz
−30
Filter: 160 Hz
Filter: 500 Hz
–35
0
−50
0
50
100
150
–40
10
200 °C
Micronas
100
1000
10000 Hz
fsignal
TA
Fig. 3–6: Typical current consumption
versus ambient temperature
Filter: 2 kHz
Fig. 3–8: Typical output voltage
versus signal frequency
Feb. 14, 2006; 6251-513-3DS
21
HAL 805
ER
DATA SHEET
%
1.0
mT
1.0
0.8
0.8
BOffset
0.6
TC = 16, TCSQ = 18
0.6
TC = 0, TCSQ = 12
0.4
0.4
0.2
0.2
0.0
0.0
−0.2
−0.2
VOUT/VDD = 0.82
−0.4
VOUT/VDD = 0.66
−0.4
−0.6
VOUT/VDD = 0.5
−0.6
VOUT/VDD = 0.34
−0.8
−1.0
−0.8
VOUT/VDD = 0.18
4
5
6
7
TC = −20, TCSQ = 12
8 V
−1.0
−50
0
50
100
150
200 °C
TA
VDD
Fig. 3–9: Typical ratiometric error
versus supply voltage
Fig. 3–11: Typical magnetic offset
versus ambient temperature
%
1.0
%
120
0.8
100
1/sensitivity
INL 0.6
0.4
80
0.2
60
0.0
−0.2
40
20
TC = 16, TCSQ = 8
−0.4
TC = 0, TCSQ = 12
−0.6
TC = −20, TCSQ = 12
−0.8
TC = −31, TCSQ = 0
0
−50
22
0
50
100
150
200 °C
−1.0
−40
Range = 30 mT
−20
0
20
TA
B
Fig. 3–10: Typical 1/sensitivity
versus ambient temperature
Fig. 3–12: Typical nonlinearity
versus magnetic field
Feb. 14, 2006; 6251-513-3DS
40 mT
Micronas
HAL 805
DATA SHEET
4. Application Notes
4.3. Temperature Compensation
4.1. Application Circuit
The relationship between the temperature coefficient
of the magnet and the corresponding TC and TCSQ
codes for linear compensation is given in the following
table. In addition to the linear change of the magnetic
field with temperature, the curvature can be adjusted
as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table.
Please contact Micronas for more detailed information
on this higher order temperature compensation.
For EMC protection, it is recommended to connect one
ceramic 4.7 nF capacitor each between ground and
the supply voltage, respectively the output voltage pin.
In addition, the input of the controller unit should be
pulled-down with a 4.7 kOhm resistor and a ceramic
4.7 nF capacitor.
Please note that during programming, the sensor will
be supplied repeatedly with the programming voltage
of 12.5 V for 100 ms. All components connected to the
VDD line at this time must be able to resist this voltage.
The HAL810, HAL815, and HAL805 contain the same
temperature compensation circuits. If an optimal setting for the HAL810, HAL815 is already available, the
same settings may be used for the HAL805.
VDD
Temperature
Coefficient of
Magnet (ppm/K)
OUT
μC
HAL805
4.7 nF
4.7 nF
4.7 nF
Fig. 4–1: Recommended application circuit
4.2. Use of two HAL805 in Parallel
Two different HAL805 sensors which are operated in
parallel to the same supply and ground line can be
programmed individually. In order to select the IC
which should be programmed, both Hall ICs are inactivated by the “Deactivate” command on the common
supply line. Then, the appropriate IC is activated by an
“Activate” pulse on its output. Only the activated sensor will react to all following read, write, and program
commands. If the second IC has to be programmed,
the “Deactivate” command is sent again, and the second IC can be selected.
10 nF
4.7 nF
400
31
6
300
28
7
200
24
8
100
21
9
0
18
10
−50
17
10
−90
16
11
−130
15
11
−170
14
11
−200
13
12
−240
12
12
−280
11
12
−320
10
13
HAL 805
Sensor B
−360
9
13
VDD
−410
8
13
OUT A & Select A
−450
7
13
−500
6
14
−550
5
14
−600
4
14
−650
3
14
−700
2
15
−750
1
15
OUT B & Select B
4.7 nF
GND
Fig. 4–2: Parallel operation of two HAL 805
Micronas
TCSQ
4.7 kΩ
GND
HAL 805
Sensor A
TC
Feb. 14, 2006; 6251-513-3DS
23
HAL 805
Temperature
Coefficient of
Magnet (ppm/K)
DATA SHEET
TC
TCSQ
4.4. Undervoltage Behavior
In a voltage range below 4.5 V to approximately 3.5 V,
the operation of the HAL805 is typically given and predictable for the most sensors. Some of the parameters
may be out of the specification. Below about 3.5 V, the
digital processing is reset. If the supply voltage once
again rises above about 3.5 V, a startup time of about
20 μs elapses for the digital processing to occur. As
long as the supply voltage is still above about 3.2 V,
the analog output is kept at its last valid value ratiometric to VDD. Below about 3 V, the entire sensor will
reset.
−810
0
15
−860
−1
16
−910
−2
16
−960
−3
16
−1020
−4
17
−1070
−5
17
−1120
−6
17
4.5. Ambient Temperature
−1180
−7
18
−1250
−8
18
−1320
−9
19
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
−1380
−10
19
TJ = TA + ΔT
−1430
−11
20
−1500
−12
20
At static conditions and continuous operation, the following equation applies:
−1570
−13
20
−1640
−14
21
−1710
−15
21
−1780
−16
22
−1870
−17
22
−1950
−18
23
−2030
−19
23
−2100
−20
24
−2180
−21
24
−2270
−22
25
4.6. EMC and ESD
−2420
−24
26
−2500
−25
27
−2600
−26
27
The HAL805 is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standard ISO 7637
part 1) are not relevant for these applications.
−2700
−27
28
−2800
−28
28
−2900
−29
29
−3000
−30
30
−3100
−31
31
ΔT = IDD * VDD * RthJA
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
For VDD = 5.5 V, Rth = 200 K/W and IDD = 10 mA the
temperature difference ΔT = 11 K.
For all sensors, the junction temperature TJ is specified. The maximum ambient temperature TAmax can be
calculated as:
TAmax = TJmax −ΔT
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4–1 is recommended. Applications with this arrangement
passed the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4
(Radiated disturbances).
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
24
Feb. 14, 2006; 6251-513-3DS
Micronas
HAL 805
DATA SHEET
5. Programming of the Sensor
– Read a register (see Fig. 5–3)
After evaluating this command, the sensor answers
with the Acknowledge Bit, 14 Data Bits, and the
Data Parity Bit on the output.
5.1. Definition of Programming Pulses
The sensor is addressed by modulating a serial telegram on the supply voltage. The sensor answers with
a serial telegram on the output pin.
The bits in the serial telegram have a different bit time
for the VDD-line and the output. The bit time for the
VDD-line is defined through the length of the Sync Bit
at the beginning of each telegram. The bit time for the
output is defined through the Acknowledge Bit.
A logical “0” is coded as no voltage change within the
bit time. A logical “1” is coded as a voltage change
between 50% and 80% of the bit time. After each bit, a
voltage change occurs.
– Programming the EEPROM cells (see Fig. 5–4)
After evaluating this command, the sensor answers
with the Acknowledge Bit. After the delay time tw,
the supply voltage rises up to the programming voltage.
– Activate a sensor (see Fig. 5–5)
If more than one sensor is connected to the supply
line, selection can be done by first deactivating all
sensors. The output of all sensors will be pulled to
ground by the internal 10 kΩ resistors. With an Activate pulse on the appropriate output pin, an individual sensor can be selected. All following commands
will only be accepted from the activated sensor.
5.2. Definition of the Telegram
tr
tf
VDDH
Each telegram starts with the Sync Bit (logical 0), 3
bits for the Command (COM), the Command Parity Bit
(CP), 4 bits for the Address (ADR), and the Address
Parity Bit (AP).
tp0
logical 0
VDDL
There are 4 kinds of telegrams:
– Write a register (see Fig. 5–2)
After the AP Bit, follow 14 Data Bits (DAT) and the
Data Parity Bit (DP). If the telegram is valid and the
command has been processed, the sensor answers
with an Acknowledge Bit (logical 0) on the output.
tp0
or
tp1
VDDH
tp0
logical 1
VDDL
or
tp0
tp1
Fig. 5–1: Definition of logical 0 and 1 bit
Table 5–1: Telegram parameters
Symbol
Parameter
Pin
Min.
Typ.
Max.
Unit
VDDL
Supply Voltage for Low Level
during Programming
1
5
5.6
6
V
VDDH
Supply Voltage for High Level
during Programming
1
6.8
8.0
8.5
V
tr
Rise time
1
0.05
ms
tf
Fall time
1
0.05
ms
tp0
Bit time on VDD
1
1.7
1.75
1.8
ms
tp0 is defined through the Sync Bit
tpOUT
Bit time on output pin
3
2
3
4
ms
tpOUT is defined through the
Acknowledge Bit
tp1
Voltage Change for logical 1
1, 3
50
65
80
%
% of tp0 or tpOUT
VDDPROG
Supply Voltage for
Programming the EEPROM
1
12.4
12.5
12.6
V
tPROG
Programming Time for EEPROM
1
95
100
105
ms
trp
Rise time of programming voltage
1
0.2
0.5
1
ms
Micronas
Feb. 14, 2006; 6251-513-3DS
Remarks
25
HAL 805
DATA SHEET
Table 5–1: Telegram parameters, continued
Symbol
Parameter
Pin
Min.
tfp
Fall time of programming voltage
1
0
tw
Delay time of programming voltage
after Acknowledge
1
0.5
Vact
Voltage for an Activate pulse
3
tact
Duration of an Activate pulse
3
Typ.
Max.
Unit
1
ms
0.7
1
ms
3
4
5
V
0.05
0.1
0.2
ms
Remarks
WRITE
Sync
COM
CP
ADR
AP
DAT
DP
VDD
Acknowledge
VOUT
Fig. 5–2: Telegram for coding a Write command
READ
Sync
COM
CP
ADR
AP
VDD
Acknowledge
DAT
DP
VOUT
Fig. 5–3: Telegram for coding a Read command
trp
tPROG
tfp
VDDPROG
ERASE, PROM, and LOCK
Sync
COM
CP
ADR
AP
VDD
Acknowledge
VOUT
tw
Fig. 5–4: Telegram for coding the EEPROM programming
VACT
tr
tACT
tf
VOUT
Fig. 5–5: Activate pulse
26
Feb. 14, 2006; 6251-513-3DS
Micronas
HAL 805
DATA SHEET
5.3. Telegram Codes
Data Bits (DAT)
The 14 Data Bits contain the register information.
Sync Bit
Each telegram starts with the Sync Bit. This logical “0”
pulse defines the exact timing for tp0.
The registers use different number formats for the
Data Bits. These formats are explained in Section 5.4.
Command Bits (COM)
In the Write command, the last bits are valid. If, for
example, the TC register (6 bits) is written, only the
last 6 bits are valid.
The Command code contains 3 bits and is a binary
number. Table 5–2 shows the available commands
and the corresponding codes for the HAL805.
In the Read command, the first bits are valid. If, for
example, the TC register (6 bits) is read, only the first 6
bits are valid.
Command Parity Bit (CP)
Data Parity Bit (DP)
This parity bit is “1” if the number of zeros within the 3
Command Bits is uneven. The parity bit is “0”, if the
number of zeros is even.
This parity bit is “1” if the number of zeros within the
binary number is even. The parity bit is “0” if the number of zeros is uneven.
Address Bits (ADR)
Acknowledge
The Address code contains 4 bits and is a binary number. Table 5–3 shows the available addresses for the
HAL805 registers.
After each telegram, the output answers with the
Acknowledge signal. This logical “0” pulse defines the
exact timing for tpOUT.
Address Parity Bit (AP)
This parity bit is “1” if the number of zeros within the 4
Address bits is uneven. The parity bit is “0” if the number of zeros is even.
Table 5–2: Available commands
Command
Code
Explanation
READ
2
read a register
WRITE
3
write a register
PROM
4
program all nonvolatile registers (except the lock bits)
ERASE
5
erase all nonvolatile registers (except the lock bits)
LOCK
7
lock the whole device and switch permanently to the analog-mode
Micronas
Feb. 14, 2006; 6251-513-3DS
27
HAL 805
DATA SHEET
5.4. Number Formats
Two-complementary number:
The most significant bit is given as first, the least significant bit as last digit.
The first digit of positive numbers is “0”, the rest of the
number is a binary number. Negative numbers start
with “1”. In order to calculate the absolute value of the
number, calculate the complement of the remaining
digits and add “1”.
Example: 101001 represents 41 decimal.
Example:
Binary number:
0101001 represents +41 decimal
1010111 represents −41 decimal
Signed binary number:
The first digit represents the sign of the following
binary number (1 for negative, 0 for positive sign).
Example:
0101001 represents +41 decimal
1101001 represents −41 decimal
Table 5–3: Available register addresses
Register
Code
Data
Bits
Format
Customer
Remark
CLAMP-LOW
1
10
binary
read/write/program
Low clamping voltage
CLAMP-HIGH
2
11
binary
read/write/program
High clamping voltage
VOQ
3
11
two compl.
binary
read/write/program
SENSITIVITY
4
14
signed binary
read/write/program
MODE
5
6
binary
read/write/program
Range and filter settings
LOCKR
6
1
binary
lock
Lock Bit
ADC-READOUT
7
14
two compl.
binary
read
TC
11
6
signed binary
read/write/program
TCSQ
12
5
binary
read/write/program
DEACTIVATE
15
12
binary
write
Deactivate the sensor
Micronas registers (read only for customers)
Register
Code
Data
Bits
Format
Remark
OFFSET
8
5
two compl. binary
ADC offset adjustment
FOSCAD
9
5
binary
Oscillator frequency adjustment
SPECIAL
13
8
28
special settings
Feb. 14, 2006; 6251-513-3DS
Micronas
HAL 805
DATA SHEET
ADC-READOUT
5.5. Register Information
– This register is read only.
– The register range is from −8192 up to 8191.
CLAMP-LOW
– The register range is from 0 up to 1023.
DEACTIVATE
– The register value is calculated by:
CLAMP-LOW =
Low Clamping Voltage
VDD
* 2048
– This register can only be written.
– The register has to be written with 2063 decimal
(80F hexadecimal) for the deactivation.
– The sensor can be reset with an Activate pulse on
the output pin or by switching off and on the supply
voltage.
CLAMP-HIGH
– The register range is from 0 up to 2047.
– The register value is calculated by:
CLAMP-HIGH =
High Clamping Voltage
VDD
5.6. Programming Information
* 2048
VOQ
– The register range is from −1024 up to 1023.
– The register value is calculated by:
VOQ =
VOQ
VDD
* 1024
If the content of any register (except the lock registers)
is to be changed, the desired value must first be written into the corresponding RAM register. Before reading out the RAM register again, the register value must
be permanently stored in the EEPROM.
Permanently storing a value in the EEPROM is done
by first sending an ERASE command followed by
sending a PROM command. The address within the
ERASE and PROM commands is not important.
ERASE and PROM act on all registers in parallel.
If all HAL805 registers are to be changed, all writing
commands can be sent one after the other, followed by
sending one ERASE and PROM command at the end.
SENSITIVITY
– The register range is from −8192 up to 8191.
– The register value is calculated by:
SENSITIVITY = Sensitivity * 2048
TC and TCSQ
During all communication sequences, the customer
has to check if the communication with the sensor was
successful. This means that the acknowledge and the
parity bits sent by the sensor have to be checked by
the customer. If the Micronas programmer board is
used, the customer has to check the error flags sent
from the programmer board.
– The TC register range is from −31 up to 31.
– The TCSQ register range is from 0 up to 31.
Please refer Section 4.2. on page 23 for the recommended values.
MODE
– The register range is from 0 up to 63 and contains
the settings for FILTER and RANGE:
MODE = FILTER * 8 + RANGE
Note: For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment
and programming of HAL805. The LOCK function is active after the next power-up of the sensor. Micronas also recommends sending an
additional ERASE command after sending the
LOCK command.
The success of the Lock Process should be
checked by reading at least one sensor register
after locking and/or by an analog check of the
sensors output signal.
Electrostatic Discharges (ESD) may disturb the
programming pulses. Please take precautions
against ESD.
Please refer Section 2.2. on page 8 for the available
FILTER and RANGE values.
Micronas
Feb. 14, 2006; 6251-513-3DS
29
HAL 805
DATA SHEET
6. Data Sheet History
1. Data Sheet: “HAL 805 Programmable Linear Hall
Effect Sensor”, Aug. 16, 2002, 6251-513-1DS. First
release of the data sheet.
2. Data Sheet: “HAL 805 Programmable Linear Hall
Effect Sensor”, ..., 6251-513-2ds. Second release of
the data sheet. Major changes:
– new package diagram for TO92UT-1
– package diagram for TO92UT-2 added
– ammopack diagrams for TO92UT-1/-2 added
3. Data Sheet: “HAL 805 Programmable Linear Hall
Effect Sensor”, Feb. 14, 2006, 6251-513-3DS. Third
release of the data sheet. Major changes:
– characteristics updated
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
30
Feb. 14, 2006; 6251-513-3DS
Micronas