Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTB9D0N10RQ8 Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free & Halogen-free package Symbol BVDSS ID @ TA=25°C, VGS=10V ID @ TA=70°C, VGS=10V RDS(ON)@VGS=10V, ID=11.5A RDS(ON)@VGS=4.5V, ID=9.5A 100V 12A 9.6A 5.6 mΩ(typ) 7.3 mΩ(typ) Outline MTB9D0N10RQ8 D D SOP-8 D D G G：Gate D：Drain S：Source Pin 1 S S S Ordering Information Device MTB9D0N10RQ8-0-T3-G Package SOP-8 (RoHS compliant & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB9D0N10RQ8 CYStek Product Specification Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Tc=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=30A, VDD=25V Repetitive Avalanche Energy @ L=0.05mH TA=25 °C Total Power Dissipation TA=70 °C Operating Junction and Storage Temperature Note : *1. Pulse width limited by maximum junction temperature VDS VGS 100 ±20 12 9.6 48 *1 48 450 *3 1.6 *2 3.1 2 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% *3. 100% tested by conditions of L=5mH, IAS=11.5A, VGS=10V, VDD=50V Thermal Data Parameter Thermal Resistance, Junction-to-case Thermal Resistance, Junction-to-ambient (Note) Symbol RθJC RθJA Value 18 40 Unit °C/W Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Ciss Coss Crss MTB9D0N10RQ8 Min. Typ. Max. 100 1 - 19.2 5.6 7.3 2.5 ±100 1 25 8 11 - 79.6 10.3 18.7 3890 265 17 - Unit V S nA μA mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=5A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=11.5A VGS =4.5V, ID=9.5A nC VDS=80V, VGS=10V, ID=11.5A pF VDS=50V, VGS=0V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 3/9 Characteristics (Cont. TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Dynamic td(ON) *1, 2 22 tr 25.2 *1, 2 ns td(OFF) *1, 2 82 tf *1, 2 13.4 Source-Drain Diode Ratings and Characteristics IS *1 12 A ISM *3 48 VSD *1 0.7 1 V trr 42 ns Qrr 48 nC Test Conditions VDS=50V, ID=11.5A, VGS=10V, RGS=1Ω IS=1A, VGS=0V IF=12A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB9D0N10RQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 50 45 BVDSS, Normalized Drain-Source Breakdown Voltage 10V,9V,8V,7V,6V,5V,4V,3.5V ID, Drain Current(A) 40 35 VGS=3V 30 25 20 15 10 1.2 1 0.8 ID=250μA, VGS=0V 0.6 5 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=4.5V VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 10 VGS=10V 1.0 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 3.2 100 90 R DS(ON) , Normalized Static DrainSource On-State Resistance R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=11.5A 80 70 60 50 40 30 20 10 2.8 VGS=10V, ID=11.5A RDS(ON) @Tj=25°C : 5.6mΩ typ. 2.4 2.0 1.6 1.2 0.8 0.4 0.0 0 0 MTB9D0N10RQ8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss 100 f=1MHz Crss 10 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 1.2 ID=1mA 1.0 0.8 0.6 ID=250μA 0.4 -75 -50 -25 50 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=10V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 10 VDS=15V 1 0.1 Pulsed Ta=25°C 0.01 0.001 VDS=20V 8 6 VDS=50V VDS=80V 4 2 ID=10A 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 50 60 70 80 Qg, Total Gate Charge(nC) 90 100 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 15 100 ID, Maximum Drain Current(A) RDS(ON) Limited ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 100μs 1ms 1 10ms TA=25°C, Tj=150°C VGS=10V,RθJA=40°C/W Single Pulse 0.1 100ms 1s DC 12 9 6 3 TA=25°C,RθJA=40°C/W,VGS=10V 0 0.01 0.01 MTB9D0N10RQ8 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 50 300 VDS=10V TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 40 35 Power (W) ID, Drain Current (A) 45 Single Pulse Power Rating, Junction to Ambient (Note on page 2) 30 25 20 200 150 100 15 10 50 5 0 0 1 2 3 4 VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 0.001 1.E-04 MTB9D0N10RQ8 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB9D0N10RQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB9D0N10RQ8 CYStek Product Specification Spec. No. : C169Q8 Issued Date : 2016.11.04 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name Date Code B9D0 N10R Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB9D0N10RQ8 CYStek Product Specification