, (inc.. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF322, IRF323 ELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs Features Description • 2.8A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. ' rDS(ON) = 1.8iiand2.5ii • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Symbol OD Ordering Information PART NUMBER PACKAGE BRAND IRF320 TO-204AA IRF320 IRF321 TO-204AA IRF321 IRF322 TO-204AA IRF322 IRF323 TO-204AA IRF323 NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Absolute Maximum Ratings Tc = 25°c, Unless Othe rwise Specified IRF320 IRF321 IRF322 IRF323 UNITS 400 350 400 350 V 400 350 400 350 V ln In 3.3 2.1 3.3 2.1 2.8 1.8 A A 13 13 2.8 1.8 11 11 A . . . .Vrq ±20 ±20 ±20 ±20 V Pn 50 0.4 50 50 50 W 0.4 0.4 0.4 W/°C EA<; 190 190 190 190 mJ -55 to 150 -55to150 -55 to 150 -55 to 150 °C 300 260 300 260 300 260 300 260 °C °C Drain to Source Breakdown Voltage (Note 1) Vnc> Drain to Gate Voltage (RGs = 20kQ) (Note 1 ) Continuous Drain Current T c = 100°C Pulsed Drain Current (Note 3) Gate to Source Voltage Maximum Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Rating (Note 4) Operating and Storage Temperature . . . Maximum Temperature for Soldering Leads at 0.063in (1 .6mm) from Case for 1 0s Packaae Bodv for 10s. See TB334 Ti Tnlen CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto 125°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified SYMBOL TEST CONDITIONS MIN TYP MAX UNITS IRF320, IRF322 400 _ _ V IRF321, IRF323 350 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 M-A VDS = 0.8 x Rated BVDSS, VGS = 0V Tj = 125°C - - 250 uA 3.3 _ _ A 2.8 - - A ±100 nA PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) BVDSs VGS(TH) bss !D(ON) IRF320, IRF321 ID = 250uA VGS = 0V, (Figure 10) VGS = VDS. ID = 250nA VDS " ID<ON) x rDS(oi\i)MAx. VGS = iov (Figure 7) IRF322, IRF323 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) 'GSS rDS(ON) Ves = ±20V ID = 1.8A, VGS = 10V, (Figures 8, 9) IRF320, IRF321 . 1.5 1.8 i) IRF322, IRF323 - 1.8 2.5 a 1.7 2.7 - S VDD = 200V, iD = 3.3A, RG = 18U, RL = eon, - 10 15 ns MOSFET Switching Times are Essentially Independent of Operating Temperature - 14 20 ns ld(OFF) - 30 45 ns tf - 13 20 ns VGS = 10V, ID = 3.3A, VDS = °-8 x Rated BVDSS. IG(REF) = 1.5mA, (Figures 14, 19, 20) - 12 20 nC Operating Temperature - 4 - nC - 8 - nC Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Sfs 'd(ON) tr Qg(TOT) Gate to Source Charge Qgs Gate to Drain "Miller" Charge Qgd VDS ^ 10V. 'D = 2.0A, (Figure 12) IRF320, IRF321, IRF322, IRF323 Electrical Specifications Tc = 25°C, Unless Otherwise Specified (Continued) PARAMETER Input Capacitance SYMBOL CISS TEST CONDITIONS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN TYP MAX UNITS - 450 - PF Output Capacitance coss - 100 - PF Reverse Transfer Capacitance CRSS - 20 - PF Internal Drain Inductance LD Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Internal Source Inductance LS Measured from the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Thermal Resistance Junction to Case RBJC Thermal Resistance Junction to Ambient R9JA Modified MOSFET Symbol Showing the Internal Devices Inductances Free Air Operation 5.0 nH 12.5 nH - - 2.5 °C/W - - 30 °C/W MIN TYP MAX UNITS - - 3.3 A 13 A Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL !SD 'SDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode >D ?) *JJ£ < Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD s Tc = 25°C, ISD = 3.3A, VGS = 0V, (Figure 13) - - 1.8 V trr Tj = 25°C, ISD = 3.3A, dlSD/dt = 100A/us 120 270 600 ns QRR Tj = 25°C, ISD = 3.3A, dlSD/dt = 100A/us 0.64 1.4 3.0 nc NOTES: 2. Pulse test: pulse width < 300^3, duty cycle < 2%.