Fairchild FQI3N25 250v n-channel mosfet Datasheet

FQB3N25 / FQI3N25
November 2000
QFET
TM
FQB3N25 / FQI3N25
250V N-Channel MOSFET
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supply.
•
•
•
•
•
•
2.8A, 250V, RDS(on) = 2.2Ω @VGS = 10 V
Low gate charge ( typical 4.0 nC)
Low Crss ( typical 4.7 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
D
D
!
"
G
S
G D S
Absolute Maximum Ratings
ID
"
"
G!
D2-PAK
FQB Series
Symbol
VDSS
! "
I2-PAK
!
FQI Series
S
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
FQB3N25 / FQI3N25
250
Units
V
2.8
A
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
(Note 1)
1.77
A
11.2
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
40
mJ
IAR
Avalanche Current
(Note 1)
2.8
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
4.5
5.5
3.13
mJ
V/ns
W
45
0.36
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance, Junction-to-Case
Typ
--
Max
2.78
Units
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient *
--
40
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
62.5
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, November 2000
Symbol
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Units
250
--
--
V
--
0.24
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
IGSSF
IGSSR
VDS = 250 V, VGS = 0 V
--
--
1
µA
VDS = 200 V, TC = 125°C
--
--
10
µA
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
--
1.75
2.2
Ω
--
1.53
--
S
--
130
170
pF
--
30
40
pF
--
4.7
6.1
pF
--
6.6
23
ns
--
25
60
ns
--
5.5
21
ns
Zero Gate Voltage Drain Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 1.4 A
gFS
Forward Transconductance
VDS = 50 V, ID = 1.4 A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 125 V, ID = 2.8 A,
RG = 25 Ω
(Note 4, 5)
VDS = 200 V, ID = 2.8 A,
VGS = 10 V
(Note 4, 5)
--
20
50
ns
--
4.0
5.2
nC
--
1.1
--
nC
--
2.2
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
2.8
A
ISM
--
--
11.2
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 2.8 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
100
--
ns
Qrr
Reverse Recovery Charge
--
0.3
--
µC
VGS = 0 V, IS = 2.8 A,
dIF / dt = 100 A/µs
(Note 4)
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8.2mH, IAS = 2.8A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.8A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQB3N25 / FQI3N25
Electrical Characteristics
1
1
10
10
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
0
10
ID , Drain Current [A]
ID, Drain Current [A]
Top :
-1
10
0
10
150℃
25℃
-55℃
-1
10
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
※ Notes :
1. VDS = 50V
2. 250μs Pulse Test
-2
-1
0
10
10
1
10
2
10
4
Figure 1. On-Region Characteristics
8
10
Figure 2. Transfer Characteristics
10
1
10
8
IDR , Reverse Drain Current [A]
RDS(on) [Ω],
Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
VGS = 10V
6
VGS = 20V
4
2
0
0
10
150℃
※ Notes :
25℃
1. VGS = 0V
2. 250μs Pulse Test
-1
0
1
2
3
4
5
6
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
300
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
Ciss
150
Coss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
Crss
50
VDS = 50V
10
VGS, Gate-Source Voltage [V]
250
Capacitance [pF]
FQB3N25 / FQI3N25
Typical Characteristics
VDS = 125V
VDS = 200V
8
6
4
2
※ Note : ID = 2.8 A
0
-1
10
0
0
10
1
10
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2000 Fairchild Semiconductor International
0
1
2
3
4
5
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, November 2000
FQB3N25 / FQI3N25
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 1.4 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
Operation in This Area
is Limited by R DS(on)
2.5
1
100 µs
ID, Drain Current [A]
ID, Drain Current [A]
10
1 ms
10 ms
DC
0
10
※ Notes :
o
1. TC = 25 C
2.0
1.5
1.0
0.5
o
2. TJ = 150 C
3. Single Pulse
-1
10
0
1
10
0.0
25
2
10
10
50
Figure 9. Maximum Safe Operating Area
100
125
150
Figure 10. Maximum Drain Current
vs. Case Temperature
D = 0 .5
10
0
0 .2
※ N o te s :
1 . Z θ J C ( t ) = 2 . 7 8 ℃ /W M a x .
2 . D u ty F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .1
0 .0 5
10
-1
0 .0 2
0 .0 1
θ JC
( t) , T h e r m a l R e s p o n s e
75
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
PDM
t1
Z
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQB3N25 / FQI3N25
Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
Qg
200nF
12V
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS
RL
VDS
90%
VDD
VGS
RG
VGS
DUT
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
VDD
DUT
10V
tp
©2000 Fairchild Semiconductor International
ID (t)
VDS (t)
VDD
tp
Time
Rev. A, November 2000
FQB3N25 / FQI3N25
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2000 Fairchild Semiconductor International
Rev. A, November 2000
4.50 ±0.20
9.90 ±0.20
+0.10
2.00 ±0.10
2.54 TYP
(0.75)
°
~3
0°
0.80 ±0.10
1.27 ±0.10
2.54 ±0.30
15.30 ±0.30
0.10 ±0.15
2.40 ±0.20
4.90 ±0.20
9.20 ±0.20
1.30 –0.05
1.20 ±0.20
(0.40)
D2PAK
1.40 ±0.20
+0.10
0.50 –0.05
2.54 TYP
4.90 ±0.20
(2XR0.45)
9.20 ±0.20
10.00 ±0.20
(7.20)
(1.75)
10.00 ±0.20
(8.00)
(4.40)
15.30 ±0.30
FQB3N25 / FQI3N25
Package Dimensions
0.80 ±0.10
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQB3N25 / FQI3N25
Package Dimensions
(Continued)
I2PAK
4.50 ±0.20
(0.40)
9.90 ±0.20
+0.10
MAX13.40
9.20 ±0.20
(1.46)
1.20 ±0.20
1.30 –0.05
0.80 ±0.10
2.54 TYP
2.54 TYP
10.08 ±0.20
1.47 ±0.10
MAX 3.00
(0.94)
13.08 ±0.20
)
5°
(4
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
10.00 ±0.20
©2000 Fairchild Semiconductor International
Rev. A, November 2000
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. F1