AWB578 AWB578 Data Sheet 30 ~ 1200 MHz Wide-band Medium Power Amplifier MMIC 1. Product Overview 1.1 General Description AWB578, a medium power amplifier MMIC, has high linearity and high efficiency over a wide range of frequency from 30 MHz to 1200 MHz, being suitable for use in both receiver and transmitter of telecommunication system up to 1.2 GHz. It has an active bias network for stable current over temperature and process variation. The amplifier is available in an SOIC8 package and passes through the stringent DC, RF, and reliability tests. 1.2 Features Application circuit • 20.0 dB gain at 500 MHz • 27.0 dBm P1dB at 500 MHz Vdevice • 42.0 dBm OIP3 at 500 MHz • 50 Ω input & output matching C3 • MTTF > 100 Years L1 • Single supply: +8 V C1 RF IN 1.3 C2 AWB578 RF OUT Applications • Wide-band amplifier at 30 ~ 1200 MHz • IF amplifier 1.4 Package Profile & RoHS Compliance SOIC8, 6.0x4.8 mm2, surface mount 1/13 ASB Inc. • [email protected] RoHS-compliant December 2014 AWB578 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +8 V, TA = +25 °C, ZO = 50 Ω. Parameter Typical Unit Frequency 30 250 512 50 500 1200 MHz Gain 20.8 20.0 19.7 20.2 19.7 18.5 dB S11 -16.0 -20.0 -20.0 -12.0 -15.0 -11.0 dB S22 -16.0 -20.0 -20.0 -16.0 -20.0 -11.0 dB Noise Figure 3.5 3.0 3.0 3.5 3.0 3.0 dB IP31) 43.0 43.5 42.0 42.0 42.0 40.5 dBm Output P1dB 27.0 27.0 27.0 27.0 27.0 26.0 dBm Current 176 176 mA Device Voltage +8.0 +8.0 V Output 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1MHz. 2.2 Product Specification Supply voltage = +8 V, TA = +25 °C, ZO = 50 Ω. Parameter Typ Max Unit Frequency 500 MHz Gain 19.7 dB S11 -20.0 dB S22 -20.0 dB Noise Figure 3.0 dB OIP3 42.0 dBm P1dB 27.0 dBm Current 176 mA Device Voltage +8.0 V 2.3 2/13 Min Pin Configuration Pin Description 2, 3 RF_IN 1, 4, 5, 8 Ground 6, 7 RF_OUT & Bias ASB Inc. • Simplified Outline [email protected] 1 8 2 7 3 6 4 5 December 2014 AWB578 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to +85 °C Storage Temperature -40 to +150 °C Device Voltage +10 V Operation Junction Temperature +160 °C Input RF Power (CW @ 30 MHz, 50 Ω matched) +21 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 30 °C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 °C reflow (Intentionally Blanked) 3/13 ASB Inc. • [email protected] December 2014 AWB578 3. Application: 30 ~ 512 MHz (Vdevice = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 C2 C1 RF OUT AWB578 RF IN PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-SOIC8-C1 Bill of Material 4/13 Symbol Value Size Description Manufacturer AWB578 - - MMIC Amplifier ASB C1, C2 1 µF 0603 DC blocking capacitor Murata C3 10 µF 0805 Decoupling capacitor Murata L1 470 nH 1206 RF choke inductor Murata ASB Inc. • [email protected] December 2014 AWB578 3.2 Performance Table Supply voltage = +8 V, TA = +25 °C, ZO = 50 Ω. Parameter Typical Unit Frequency 30 250 512 MHz Gain 20.5 20.0 19.7 dB S11 -9.0 -18.0 -15.0 dB S22 -13.0 -20.0 -20.0 dB Noise Figure 3.5 3.0 3.0 dB IP31) 42.0 43.0 42.0 dBm Output P1dB 26.5 27.0 27.0 dBm Current 176 mA Device Voltage +8.0 V Output 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 20 10 0 S21 -10 -20 -30 -40 5 4 3 2 S11 S12 S22 K -50 -60 0 5/13 9 8 7 6 100 1 0 200 300 400 Frequency (MHz) ASB Inc. • Stability Factor, K S-parameters (dB) 3.3 [email protected] 500 600 December 2014 AWB578 4. Application: 30 ~ 512 MHz (Vdevice = +8 V, Additional Matching) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 C1 L2 RF IN C2 RF OUT AWB578 L3 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-SOIC8-C1 Bill of Material 6/13 Symbol Value Size Description Manufacturer AWB578 - - MMIC Amplifier ASB C1, C2 1 µF 0603 DC blocking capacitor Murata C3 10 µF 0805 Decoupling capacitor Murata L1 1 µΗ 1206 RF choke inductor Murata L2 5.6 nH 0603 Matching inductor Murata L3 680 nH 0603 Matching inductor Samsung ASB Inc. • [email protected] December 2014 AWB578 4.2 Performance Table Supply voltage = +8 V, TA = +25 °C, ZO = 50 Ω. Parameter Typical Unit Frequency 30 250 512 MHz Gain 20.8 20.0 19.7 dB S11 -16.0 -20.0 -20.0 dB S22 -16.0 -20.0 -20.0 dB Noise Figure 3.5 3.0 3.0 dB IP31) 43.0 43.5 42.0 dBm Output P1dB 27.0 27.0 27.0 dBm Current 176 mA Device Voltage +8.0 V Output 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 20 10 0 S21 -10 -20 -30 -40 5 4 3 2 S22 S12 S11 K -50 -60 0 7/13 9 8 7 6 100 1 0 200 300 400 Frequency (MHz) ASB Inc. • Stability Factor, K S-parameters (dB) 4.3 [email protected] 500 600 December 2014 AWB578 Plots of Performances with Temperature 25 23 22 22 Frequency = 250 MHz 19 -40 °C 16 +25 °C 13 Gain (dB) Gain (dB) 4.4 20 19 +85 °C 18 10 0 100 200 300 400 Frequency (MHz) 500 0 -60 600 +25 °C -20 -20 20 40 0 Temperature (°C) 60 80 100 -40 °C +25 °C -10 S22 (dB) +85 °C -40 0 -40 °C -10 S11 (dB) 21 +85 °C -20 -30 -30 -40 -40 0 100 200 300 400 Frequency (MHz) 500 0 600 100 200 300 400 Frequency (MHz) 500 600 200 Current (mA) 190 180 170 160 150 140 -60 8/13 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. • [email protected] December 2014 AWB578 5 8 7 6 +25 °C 5 +85 °C 4 3 4 NF (dB) NF (dB) Frequency = 250 MHz -40 °C 2 3 2 1 1 0 0 0 100 200 300 400 Frequency (MHz) 500 -60 600 -40 -20 0 20 40 Temperature (°C) 29 29 60 80 100 Frequency = 250 MHz 28.5 27 -40 °C +25 °C P1dB (dBm) P1dB (dBm) 28 28 27.5 27 26 26.5 +85 °C 26 25 0 100 200 300 400 Frequency (MHz) 500 -20 43 42 OIP3 (dBm) +85 °C 60 80 100 45 +25 °C 44 0 20 40 Temperature (°C) Frequency = 250 MHz -40 °C 45 OIP3 (dBm) -40 46 46 44 43 42 41 41 40 40 0 9/13 -60 600 100 200 300 400 Frequency (MHz) 500 600 ASB Inc. • -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 December 2014 AWB578 5. Application: 50 ~ 1200 MHz (Vdevice = +8 V) 5.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 C2 C1 RF OUT AWB578 RF IN PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-SOIC8-C1 Bill of Material 10/13 Symbol Value Size Description Manufacturer AWB578 - - MMIC Amplifier ASB C1, C2 1 µF 0603 DC blocking capacitor Murata C3 10 µF 0805 Decoupling capacitor Murata L1 470 nH 1206 RF choke inductor Murata ASB Inc. • [email protected] December 2014 AWB578 5.2 Performance Table Supply voltage = +8 V, TA = +25 °C, ZO = 50 Ω. Parameter Typical Unit Frequency 50 500 1200 MHz Gain 20.2 19.7 18.5 dB S11 -12.0 -15.0 -11.0 dB S22 -16.0 -20.0 -11.0 dB Noise Figure 3.5 3.0 3.0 dB IP31) 42.0 42.0 40.5 dBm Output P1dB 27.0 27.0 26.0 dBm Current 176 mA Device Voltage +8.0 V Output 1) OIP3 is measured with two tones at an output power of +12 dBm/tone separated by 1MHz. Plot of S-parameter & Stability Factor 30 20 10 0 S21 -10 -20 -30 -40 5 4 3 2 S11 S12 S22 K -50 -60 0 11/13 9 8 7 6 200 400 600 800 Frequency (MHz) ASB Inc. • [email protected] 1000 Stability Factor, K S-parameters (dB) 5.3 1 0 1200 December 2014 AWB578 6. Package Outline (SOIC8) Part No. Symbols AWB578 A A1 A2 B C D D2 E E1 E2 e L y \ θ |L1-L1′| L1 Dimensions (In mm) MIN NOM 1.40 1.50 0.00 ----1.45 0.33 --0.19 --4.80 --3.20 3.30 5.80 6.00 3.80 3.90 2.30 2.40 --1.27 0.40 --------0° ----1.04REF MAX 1.60 0.10 --0.51 0.25 5.00 3.40 6.20 4.00 2.50 --1.27 0.10 8° 0.12 7. Surface Mount Recommendation (In mm) NOTE 1. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 2. To ensure reliable operation, device ground paddle-to-ground pad soldering is critical. 3. Add mounting screws near the part to fasten the board to a heat sinker. Ensure that the ground & thermal via region contacts the heat sinker. 4. A proper heat dissipation path underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can result from inappropriate heat dissipation. 12/13 ASB Inc. • [email protected] December 2014 AWB578 8. Recommended Soldering Reflow Profile 260 °C 20~40 sec Ramp-up (3 °C/sec) Ramp-down (6 °C/sec) 200 °C 150 °C 60~180 sec (End of Datasheet) 13/13 ASB Inc. • [email protected] December 2014