TI1 OPA4354 250mhz, rail-to-rail i/o, cmos operational amplifier Datasheet

OPA354
OPA2354
OPA4354
SBOS233E − MARCH 2002− REVISED MAY 2009
250MHz, Rail-to-Rail I/O, CMOS
OPERATIONAL AMPLIFIERS
FEATURES
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DESCRIPTION
UNITY-GAIN BANDWIDTH: 250MHz
WIDE BANDWIDTH: 100MHz GBW
HIGH SLEW RATE: 150V/µs
LOW NOISE: 6.5nV/√Hz
RAIL-TO-RAIL I/O
HIGH OUTPUT CURRENT: > 100mA
EXCELLENT VIDEO PERFORMANCE:
Diff Gain: 0.02%, Diff Phase: 0.095
0.1dB Gain Flatness: 40MHz
LOW INPUT BIAS CURRENT: 3pA
QUIESCENT CURRENT: 4.9mA
THERMAL SHUTDOWN
SUPPLY RANGE: 2.5V to 5.5V
MicroSIZE AND PowerPAD PACKAGES
APPLICATIONS
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VIDEO PROCESSING
ULTRASOUND
OPTICAL NETWORKING, TUNABLE LASERS
PHOTODIODE TRANSIMPEDANCE AMPS
ACTIVE FILTERS
HIGH-SPEED INTEGRATORS
ANALOG-TO-DIGITAL (A/D) CONVERTER
INPUT BUFFERS
DIGITAL-TO-ANALOG (D/A) CONVERTER
OUTPUT AMPLIFIERS
BARCODE SCANNERS
COMMUNICATIONS
V+
−In
OPA354
The OPA354 series of high-speed, voltage-feedback
CMOS operational amplifiers are designed for video and
other applications requiring wide bandwidth. They are
unity-gain stable and can drive large output currents.
Differential gain is 0.02% and differential phase is 0.09°.
Quiescent current is only 4.9mA per channel.
The OPA354 series op amps are optimized for operation
on single or dual supplies as low as 2.5V (±1.25V) and up
to 5.5V (±2.75V). Common-mode input range extends
beyond the supplies. The output swing is within 100mV of
the rails, supporting wide dynamic range.
For applications requiring the full 100mA continuous
output current, single and dual SO-8 PowerPAD versions
are available.
The single version (OPA354), is available in the tiny
SOT23-5 and SO-8 PowerPAD packages. The dual
version (OPA2354) comes in the miniature MSOP-8 and
SO-8 PowerPAD packages. The quad version (OPA4354)
is offered in TSSOP-14 and SO-14 packages.
Multichannel versions feature completely independent
circuitry for lowest crosstalk and freedom from interaction.
All are specified over the extended −40°C to +125°C
temperature range.
OPAx354 RELATED PRODUCTS
FEATURES
PRODUCT
Shutdown Version of OPA354 Family
OPAx357
200MHz GBW, Rail-to-Rail Output, CMOS, Shutdown
OPAx355
200MHz GBW, Rail-to-Rail Output, CMOS
OPAx356
38MHz GBW, Rail-to-Rail Input/Output, CMOS
OPAx350/3
75MHz BW G = 2, Rail-to-Rail Output
OPAx631
150MHz BW G = 2, Rail-to-Rail Output
OPAx634
100MHz BW, Differential Input/Output, 3.3V Supply
THS412x
VOUT
+In
V−
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments
semiconductor products and disclaimers thereto appears at the end of this data sheet.
PowerPAD is a trademark of Texas Instruments.All other trademarks are the property of their respective owners.
Copyright  2002−2009, Texas Instruments Incorporated
! ! www.ti.com
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SBOS233E − MARCH 2002− REVISED MAY 2009
ELECTROSTATIC
DISCHARGE SENSITIVITY
ABSOLUTE MAXIMUM RATINGS(1)
Supply Voltage, V+ to V− . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5V
Signal Input Terminals Voltage(2) . . . . (V−) − (0.5V) to (V+) + (0.5V)
Current(2) . . . . . . . . . . . . . . . . . . . . . . 10mA
Output Short-Circuit(3) . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . −55°C to +150°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . −65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
This integrated circuit can be damaged by ESD. Texas Instruments
recommends that all integrated circuits be handled with appropriate
precautions. Failure to observe proper handling and installation
procedures can cause damage.
ESD damage can range from subtle performance degradation to
complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could
cause the device not to meet its published specifications.
(1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods
may degrade device reliability. These are stress ratings only, and
functional operation of the device at these or any other conditions
beyond those specified is not supported.
(2) Input terminals are diode-clamped to the power-supply rails.
Input signals that can swing more than 0.5V beyond the supply
rails should be current limited to 10mA or less.
(3) Short-circuit to ground, one amplifier per package.
PACKAGE/ORDERING INFORMATION(1)
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
MARKING
ORDERING
NUMBER
TRANSPORT
MEDIA, QUANTITY
PRODUCT
PACKAGE-LEAD
PACKAGE
DESIGNATOR
OPA354
SO-8 PowerPAD
DDA
−40°C to +125°C
OPA354A
OPA354AIDDA
OPA354AIDDAR
Rails, 97
Tape and Reel, 2500
OPA354
SOT23-5
DBV
−40°C to +125°C
OABI
OPA354AIDBVT
OPA354AIDBVR
Tape and Reel, 250
Tape and Reel, 3000
OPA2354
SO-8 PowerPAD
DDA
−40°C to +125°C
OPA2354A
OPA2354AIDDA
OPA2354AIDDAR
Rails, 97
Tape and Reel, 2500
OPA2354
MSOP-8
DGK
−40°C to +125°C
OACI
OPA2354AIDGKT
OPA2354AIDGKR
Tape and Reel, 250
Tape and Reel, 2500
OPA4354
SO-14
D
−40°C to +125°C
OPA4354A
OPA4354AID
OPA4354AIDR
Rails, 58
Tape and Reel, 2500
OPA4354
TSSOP-14
PW
−40°C to +125°C
OPA4354A
OPA4354AIPWT
OPA4354AIPWR
Tape and Reel, 250
Tape and Reel, 2500
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(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI web site
at www.ti.com.
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SBOS233E − MARCH 2002− REVISED MAY 2009
PIN CONFIGURATIONS
Top View
OPA354
OPA2354
OPA354
NC (1)
1
8
NC (1 )
−In
2
7
V+
+In
3
6
Out
V−
4
5
NC (1 )
Out
1
V−
2
+In
3
5
V+
Out A
1
−In A
2
8
V+
7
Out B
6
−In B
5
+In B
A
4
+In A
−In
3
B
V−
4
SOT23
SO PowerPAD(2)
MSOP
SO PowerPAD(2)
OPA4354
Out A
1
−In A
2
+In A
14
Out D
13
−In D
3
12
+In D
V+
4
11
V−
+In B
5
10
+In C
A
D
B
C
−In B
6
9
−In C
Out B
7
8
Out C
SO
TSSOP
NOTES: (1) NC means no internal connection. (2) PowerPAD should be connected to V− or left floating.
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SBOS233E − MARCH 2002− REVISED MAY 2009
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V Single-Supply
Boldface limits apply over the specified temperature range, TA = −40°C to +125°C.
At TA = +25°C, RF = 0Ω , RL = 1kΩ, and connected to VS/2, unless otherwise noted.
OPA354AI
OPA2354AI, OPA4354AI
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
OFFSET VOLTAGE
Input Offset Voltage
VOS
±2
VS = +5V
Specified Temperature Range
vs Temperature
dVOS/dT
vs Power Supply
PSRR
Specified Temperature Range
+4
VS = +2.7V to +5.5V, VCM = (VS/2) − 0.55V
±200
Specified Temperature Range
±8
mV
+10
mV
µV/°C
±800
µV/V
±900
µV/V
INPUT BIAS CURRENT
Input Bias Current
Input Offset Current
IB
3
±50
pA
IOS
±1
±50
pA
NOISE
Input Voltage Noise Density
Current Noise Density
en
f = 1MHz
6.5
nV/√Hz
in
f = 1MHz
50
fA/√Hz
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
VCM
Common-Mode Rejection Ratio
CMRR
(V−) − 0.1
VS = +5.5V, −0.1V < VCM < +3.5V
66
Specified Temperature Range
64
VS = +5.5V, −0.1V < VCM < +5.6V
56
Specified Temperature Range
55
(V+) + 0.1
80
V
dB
dB
68
dB
dB
INPUT IMPEDANCE
1013 || 2
1013 || 2
Differential
Common-Mode
OPEN-LOOP GAIN
AOL
Specified Temperature Range
VS = +5V, +0.3V < VO < +4.7V
VS = +5V, +0.4V < VO < +4.6V
94
110
90
Ω || pF
Ω || pF
dB
dB
FREQUENCY RESPONSE
Small-Signal Bandwidth
f−3dB
G = +1, VO = 100mVPP, RF = 25Ω
250
MHz
f−3dB
G = +2, VO = 100mVPP
90
MHz
G = +10
100
MHz
f0.1dB
G = +2, VO = 100mVPP
40
MHz
SR
VS = +5V, G = +1, 4V Step
VS = +5V, G = +1, 2V Step
150
V/µs
130
V/µs
VS = +3V, G = +1, 2V Step
G = +1, VO = 200mVPP, 10% to 90%
110
V/µs
2
ns
G = +1, VO = 2VPP, 10% to 90%
11
ns
VS = +5V, G = +1, 2V Output Step
30
ns
60
ns
VIN S Gain = VS
5
ns
2nd-Harmonic
G = +1, f = 1MHz, VO = 2VPP, RL = 200Ω, VCM = 1.5V
−75
dBc
3rd-Harmonic
G = +1, f = 1MHz, VO = 2VPP, RL = 200Ω, VCM = 1.5V
−83
dBc
Differential Gain Error
NTSC, RL = 150Ω
0.02
%
Differential Phase Error
NTSC, RL = 150Ω
0.09
degrees
f = 5MHz
−100
dB
−84
dB
Gain-Bandwidth Product
Bandwidth for 0.1dB Gain Flatness
Slew Rate
Rise-and-Fall Time
Settling Time, 0.1%
GBW
0.01%
Overload Recovery Time
Harmonic Distortion
Channel-to-Channel Crosstalk
OPA2354
OPA4354
(1) See typical characteristics Output Voltage Swing vs Output Current.
(2) Specified by design.
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SBOS233E − MARCH 2002− REVISED MAY 2009
ELECTRICAL CHARACTERISTICS: VS = +2.7V to +5.5V Single-Supply (continued)
Boldface limits apply over the specified temperature range, TA = −40°C to +125°C.
At TA = +25°C, RF = 0Ω , RL = 1kΩ, and connected to VS/2, unless otherwise noted.
OPA354AI
OPA2354AI, OPA4354AI
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
0.1
0.3
V
OUTPUT
Voltage Output Swing from Rail
VS = +5V, RL = 1kΩ, AOL > 94dB
Specified Temperature Range
Output Current(1)(2), Single, Dual, Quad
VS = +5V, RL = 1kΩ, AOL > 90dB
IO
VS = +5V
Closed-Loop Output Impedance
Open-Loop Output Resistance
0.4
100
V
mA
VS = +3V
50
mA
f < 100kHz
0.05
Ω
35
Ω
RO
POWER SUPPLY
Specified Voltage Range
VS
2.7
Operating Voltage Range
Quiescent Current (per amplifier)
5.5
V
6
mA
7.5
mA
2.5 to 5.5
IQ
VS = +5V, Enabled, IO = 0
4.9
Specified Temperature Range
V
THERMAL SHUTDOWN
Junction Temperature
Shutdown
+160
°C
Reset from Shutdown
+140
°C
TEMPERATURE RANGE
Specified Range
−40
+125
°C
Operating Range
−55
+150
°C
Storage Range
−65
+150
°C
Thermal Resistance
qJA
SOT23-5, MSOP-8
150
°C/W
TSSOP-14
100
°C/W
SO-14
100
°C/W
SO-8 PowerPAD
65
°C/W
(1) See typical characteristics Output Voltage Swing vs Output Current.
(2) Specified by design.
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SBOS233E − MARCH 2002− REVISED MAY 2009
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 5V, G = +1, RF = 0Ω, RL = 1kΩ, and connected to VS/2, unless otherwise noted.
NONINVERTING SMALL−SIGNAL
FREQUENCY RESPONSE
3
3
G = +1
RF = 25Ω
VO = 0.1VPP
VO = 0.1VPP, RF = 604Ω
0
Normalized Gain (dB)
0
Normalized Gain (dB)
INVERTING SMALL−SIGNAL
FREQUENCY RESPONSE
G = +2, RF = 604Ω
−3
G = +5, RF = 604Ω
−6
G = +10, RF = 604Ω
−9
−12
−3
G = −1
−6
G = −5
G = −10
−12
−15
100k
1M
10M
Frequency (Hz)
100M
−15
100k
1G
1M
100M
1G
Output Voltage (500mV/div)
Output Voltage (40mV/div)
Time (20ns/div)
Time (20ns/div)
HARMONIC DISTORTION vs OUTPUT VOLTAGE
0.1dB GAIN FLATNESS
0.4
−50
VO = 0.1VPP
Harmonic Distortion (dBc)
0.5
Normalized Gain (dB)
10M
Frequency (Hz)
NONINVERTING LARGE−SIGNAL STEP RESPONSE
NONINVERTING SMALL−SIGNAL STEP RESPONSE
0.3
G = +1
RF = 25Ω
0.2
0.1
0
−0.1
−0.2
G = +2
RF = 604Ω
−0.3
−0.4
−0.5
100k
6
G = −2
−9
G = −1
f = 1MHz
RL = 200Ω
−60
−70
2nd−Harmonic
−80
−90
3rd−Harmonic
−100
1M
10M
Frequency (Hz)
100M
1G
0
1
2
Output Voltage (VPP)
3
4
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SBOS233E − MARCH 2002− REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = 5V, G = +1, RF = 0Ω, RL = 1kΩ, and connected to VS/2, unless otherwise noted.
HARMONIC DISTORTION vs INVERTING GAIN
HARMONIC DISTORTION vs NONINVERTING GAIN
−50
−50
Harmonic Distortion (dBc)
−60
−70
2nd−Harmonic
−80
−90
VO = 2VPP
f = 1MHz
RL = 200Ω
−60
Harmonic Distortion (dBc)
VO = 2VPP
f = 1MHz
RL = 200Ω
−70
2nd−Harmonic
−80
3rd−Harmonic
−90
3rd−Harmonic
−100
−100
1
1
10
10
Gain (V/V)
Gain (V/V)
HARMONIC DISTORTION vs LOAD RESISTANCE
HARMONIC DISTORTION vs FREQUENCY
−50
−50
Harmonic Distortion (dBc)
−60
−70
2nd−Harmonic
−80
3rd−Harmonic
−90
−60
Harmonic Distortion (dBc)
G = +1
VO = 2VPP
RL = 200Ω
VCM = 1.5V
G = +1
VO = 2VPP
f = 1MHz
VCM = 1.5V
−70
2nd−Harmonic
−80
3rd−Harmonic
−90
−100
−100
100k
1M
Frequency (Hz)
100
10M
1k
RL (Ω)
INPUT VOLTAGE AND CURRENT NOISE
SPECTRAL DENSITY vs FREQUENCY
FREQUENCY RESPONSE FOR VARIOUS RL
10k
3
1k
Voltage Noise
Normalized Gain (dB)
Voltage Noise (nV/√Hz),
Current Noise (fA/√Hz)
RL = 10kΩ
0
Current Noise
100
10
−3
−6
G = +1
R F = 0Ω
VO = 0.1VPP
C L = 0pF
RL = 1kΩ
RL = 100Ω
−9
RL = 50Ω
−12
1
10
100
1k
10k
100k
Frequency (Hz)
1M
10M
100M
−15
100k
1M
10M
Frequency (Hz)
100M
1G
7
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SBOS233E − MARCH 2002− REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = 5V, G = +1, RF = 0Ω, RL = 1kΩ, and connected to VS/2, unless otherwise noted.
FREQUENCY RESPONSE FOR VARIOUS CL
RECOMMENDED RS vs CAPACITIVE LOAD
9
160
G = +1
VO = 0.1VPP
R S = 0Ω
Normalized Gain (dB)
6
3
For 0.1dB
Flatness
140
CL = 100pF
120
0
−3
RS (Ω)
100
CL = 47pF
−6
80
60
VIN
−9
CL
0
1M
10M
Frequency (Hz)
100M
1G
1
1k
10
100
Capacitive Load (pF)
COMMON−MODE REJECTION RATIO AND
POWER−SUPPLY REJECTION RATIO vs FREQUENCY
FREQUENCY RESPONSE vs CAPACITIVE LOAD
100
3
G = +1
VO = 0.1VPP
0
CL = 5.6pF, RS = 0Ω
CMRR
80
CMRR, PSRR (dB)
Normalized Gain (dB)
1kΩ
20
−15
100k
CL = 47pF, RS = 140Ω
−3
CL = 100pF, RS = 120Ω
−6
−9
VIN
RS
VO
OPA354
−12
CL
−15
100k
PSRR+
60
PSRR−
40
20
1kΩ
0
1M
10M
Frequency (Hz)
10k
1G
100M
100k
1M
10M
Frequency (Hz)
100M
1G
COMPOSITE VIDEO
DIFFERENTIAL GAIN AND PHASE
OPEN−LOOP GAIN AND PHASE
0.8
180
160
0.7
140
120
dG/dP (%/degrees)
Open−Loop Phase (degrees)
Open−Loop Gain (dB)
VO
OPA354
CL = 5.6pF
−12
Phase
100
80
60
40
Gain
20
0.6
0.5
dP
0.4
0.3
0.2
0
−20
0.1
−40
0
10
8
RS
40
100
1k
10k 100k
1M
Frequency (Hz)
10M
100M
1G
dG
1
2
3
Number of 150Ω Loads
4
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SBOS233E − MARCH 2002− REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = 5V, G = +1, RF = 0Ω, RL = 1kΩ, and connected to VS/2, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
FOR VS = 3V
INPUT BIAS CURRENT vs TEMPERATURE
3
1k
Output Voltage (V)
Input Bias Current (pA)
10k
100
2
+125_ C
−55_ C
+25_ C
1
10
1
0
−55
−35
−15
5
25
45
65
Temperature (_C)
85
0
105 125 135
20
40
60
80
100
120
Output Current (mA)
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
FOR VS = 5V
SUPPLY CURRENT vs TEMPERATURE
7
5
4
VS = 5V
5
Output Voltage (V)
Supply Current (mA)
6
4
VS = 2.5V
3
2
3
−55_C
+25_ C
+125_ C
2
1
1
0
0
−55
−35
−15
5
25
45
65
Temperature (_ C)
85
105 125 135
0
25
50
75
100
125
150
175
200
Output Current (mA)
MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
CLOSED−LOOP OUTPUT IMPEDANCE vs FREQUENCY
6
100
VS = 5.5V
10
Output Voltage (VPP)
Output Impedance (Ω)
5
1
0.1
Maximum Output
Voltage without
Slew−Rate
Induced Distortion
4
3
VS = 2.7V
2
OPA354
1
ZO
0.01
100k
0
1M
10M
Frequency (Hz)
100M
1G
1
10
100
Frequency (MHz)
9
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SBOS233E − MARCH 2002− REVISED MAY 2009
TYPICAL CHARACTERISTICS (continued)
At TA = +25°C, VS = 5V, G = +1, RF = 0Ω, RL = 1kΩ, and connected to VS/2, unless otherwise noted.
OUTPUT SETTLING TIME TO 0.1%
OPEN−LOOP GAIN vs TEMPERATURE
120
0.5
0.4
Open−Loop Gain (dB)
Output Error (%)
RL = 1kΩ
VO = 2VPP
0.3
0.2
0.1
0
−0.1
−0.2
−0.3
110
100
90
80
−0.4
−0.5
70
0
10
20
30
40
50
60
70
80
90
−55
100
−35
−15
5
Time (ns)
25
45
65
Temperature (_ C)
85
105 125 135
COMMON−MODE REJECTION RATIO AND
POWER−SUPPLY REJECTION RATIO vs TEMPERATURE
OFFSET VOLTAGE PRODUCTION DISTRIBUTION
100
Population
CMRR, PSRR (dB)
90
Common−Mode Rejection Ratio
80
Power−Supply Rejection Ratio
70
60
50
−8 −7 −6 −5 −4 −3 −2 −1 0 1 2 3
Offset Voltage (mV)
4 5 6
−55
7 8
−35
−15
5
25
CHANNEL−TO−CHANNEL CROSSTALK
Crosstalk, Input−Referred (dB)
0
−20
−40
OPA4354
−60
OPA2354
−80
−100
−120
100k
1M
10M
Frequency (Hz)
10
45
65
Temperature (_ C)
100M
1G
85
105 125 135
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APPLICATIONS INFORMATION
The OPA354 is a CMOS, rail-to-rail I/O, high-speed,
voltage-feedback operational amplifier designed for video,
high-speed, and other applications. It is available as a
single, dual, or quad op amp.
The amplifier features a 100MHz gain bandwidth, and
150V/µs slew rate, but it is unity-gain stable and can be
operated as a +1V/V voltage follower.
OPERATING VOLTAGE
The OPA354 is specified over a power-supply range of
+2.7V to +5.5V (±1.35V to ±2.75V). However, the supply
voltage may range from +2.5V to +5.5V (±1.25V to
±2.75V). Supply voltages higher than 7.5V (absolute
maximum) can permanently damage the amplifier.
Parameters that vary over supply voltage or temperature
are shown in the typical characteristics section of this data
sheet.
RAIL-TO-RAIL INPUT
The specified input common-mode voltage range of the
OPA354 extends 100mV beyond the supply rails. This is
achieved with a complementary input stagean
N-channel input differential pair in parallel with a
P-channel differential pair, as shown in Figure 1. The
N-channel pair is active for input voltages close to the
positive rail, typically (V+) − 1.2V to 100mV above the
positive supply, while the P-channel pair is on for inputs
from 100mV below the negative supply to approximately
(V+) − 1.2V. There is a small transition region, typically
(V+) − 1.5V to (V+) − 0.9V, in which both pairs are on. This
600mV transition region can vary ±500mV with process
variation. Thus, the transition region (both input stages on)
can range from (V+) − 2.0V to (V+) − 1.5V on the low end,
up to (V+) − 0.9V to (V+) − 0.4V on the high end.
A double-folded cascode adds the signal from the two
input pairs and presents a differential signal to the class AB
output stage.
RAIL-TO-RAIL OUTPUT
A class AB output stage with common-source transistors
is used to achieve rail-to-rail output. For high-impedance
loads (> 200Ω), the output voltage swing is typically
100mV from the supply rails. With 10Ω loads, a useful
output swing can be achieved while maintaining high
open-loop gain. See the typical characteristic curve Output
Voltage Swing vs Output Current.
V+
Reference
Current
VIN+
VIN−
VBIAS1
Class AB
Control
Circuitry
VO
VBIAS2
V−
(Ground)
Figure 1. Simplified Schematic
11
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SBOS233E − MARCH 2002− REVISED MAY 2009
OUTPUT DRIVE
R2
10kΩ
The OPA354’s output stage can supply a continuous
output current of ±100mA and still provide approximately
2.7V of output swing on a 5V supply, as shown in Figure 2.
For maximum reliability, it is not recommended to run a
continuous DC current in excess of ±100mA. Refer to the
typical characteristic curve Output Voltage Swing vs
Output Current. For supplying continuous output currents
greater than ±100mA, the OPA354 may be operated in
parallel, as shown in Figure 3.
C1
200pF
+5V
1µF
R1
100kΩ
R5
1Ω
OPA2354
The OPA354 will provide peak currents up to 200mA,
which corresponds to the typical short-circuit current.
Therefore, an on-chip thermal shutdown circuit is provided
to protect the OPA354 from dangerously high junction
temperatures. At 160°C, the protection circuit will shut
down the amplifier. Normal operation will resume when the
junction temperature cools to below 140°C.
R3
100kΩ
+
−
R6
1Ω
2V In = 200mA
Out, as Shown
RSHUNT
1Ω
OPA2354
R4
10kΩ
R2
1kΩ
+
−
C1
50pF
Laser Diode
V1
5V
1µF
R1
10kΩ
Figure 3. Parallel Operation
V+
VIDEO
OPA354
+
VIN
R3
10kΩ
−
1V In = 100mA
Out, as Shown
V−
RSHUNT
1Ω
R4
1kΩ
The OPA354 output stage is capable of driving standard
back-terminated 75Ω video cables, as shown in Figure 4.
By back-terminating a transmission line, it does not exhibit
a capacitive load to its driver. A properly back-terminated
75Ω cable does not appear as capacitance; it presents
only a 150Ω resistive load to the OPA354 output.
Laser Diode
+5V
Figure 2. Laser Diode Driver
Video
In
75Ω
75Ω
OPA354
Video
Output
+2.5V
604Ω
604Ω
+2.5V
Figure 4. Single-Supply Video Line Driver
12
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SBOS233E − MARCH 2002− REVISED MAY 2009
The OPA354 can be used as an amplifier for RGB graphic
signals, which have a voltage of zero at the video black
level, by offsetting and AC-coupling the signal. See
Figure 5.
circuits. The OPA354 series provide an effective means of
buffering the A/D converter’s input capacitance and
resulting charge injection while providing signal gain. For
applications requiring high DC accuracy, the OPA350
series is recommended.
DRIVING ANALOG-TO-DIGITAL
CONVERTERS
Figure 6 illustrates the OPA354 driving an A/D converter.
With the OPA354 in an inverting configuration, a capacitor
across the feedback resistor can be used to filter
high-frequency noise in the signal.
The OPA354 series op amps offer 60ns of settling time to
0.01%, making them a good choice for driving high- and
medium-speed sampling A/D converters and reference
604Ω
+3V
+
V+
10nF
604Ω
75Ω
1/2
OPA2354
R1
Red(1)
1µF
Red
75Ω
R2
V+
R1
Green(1)
R2
604Ω
75Ω
1/2
OPA2354
Green
75Ω
604Ω
NOTE: (1) Source video signal offset
300mV above ground to accomodate
op amp swing−to−ground capability.
604Ω
+3V
+
V+
1µF
10nF
604Ω
75Ω
Blue(1)
R1
OPA354
Blue
75Ω
R2
Figure 5. RGB Cable Driver
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SBOS233E − MARCH 2002− REVISED MAY 2009
+5V
330pF
5kΩ
5kΩ
VIN
VREF
V+
+In
OPA354
+2.5V
−In
ADS7816, ADS7861,
or ADS7864
12−Bit A/D Converter
GND
VIN = 0V to −5V for 0V to 5V output.
NOTE: A/D Converter Input = 0V to VREF
Figure 6. The OPA354 in Inverting Configuration Driving the ADS7816
CAPACITIVE LOAD AND STABILITY
The OPA354 series op amps can drive a wide range of
capacitive loads. However, all op amps under certain
conditions may become unstable. Op amp configuration,
gain, and load value are just a few of the factors to consider
when determining stability. An op amp in unity-gain
configuration is most susceptible to the effects of
capacitive loading. The capacitive load reacts with the op
amp’s output resistance, along with any additional load
resistance, to create a pole in the small-signal response
that degrades the phase margin. Refer to the typical
characteristic curve Frequency Response for Various CL
for details.
The OPA354’s topology enhances its ability to drive
capacitive loads. In unity gain, these op amps perform well
with large capacitive loads. Refer to the typical
characteristic curve Recommended RS vs Capacitive Load
and Frequency Response vs Capacitive Load for details.
One method of improving capacitive load drive in the
unity-gain configuration is to insert a 10Ω to 20Ω resistor
in series with the output, as shown in Figure 7. This
significantly reduces ringing with large capacitive
loadssee the typical characteristic curve Frequency
Response vs Capacitive Load. However, if there is a
resistive load in parallel with the capacitive load, RS
creates a voltage divider. This introduces a DC error at the
output and slightly reduces output swing. This error may
be insignificant. For instance, with RL = 10kΩ and RS =
20Ω, there is only about a 0.2% error at the output.
14
V+
RS
VOUT
OPA354
VIN
RL
CL
Figure 7. Series Resistor in Unity-Gain
Configuration Improves Capacitive Load Drive
WIDEBAND TRANSIMPEDANCE AMPLIFIER
Wide bandwidth, low input bias current, and low input
voltage and current noise make the OPA354 an ideal
wideband photodiode transimpedance amplifier for
low-voltage single-supply applications. Low-voltage noise
is important because photodiode capacitance causes the
effective noise gain of the circuit to increase at high
frequency.
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SBOS233E − MARCH 2002− REVISED MAY 2009
The key elements to a transimpedance design, as shown
in Figure 8, are the expected diode capacitance (including
the parasitic input common-mode and differential-mode
input capacitance (2 + 2)pF for the OPA354), the desired
transimpedance gain (RF), and the Gain-Bandwidth
Product (GBW) for the OPA354 (100MHz). With these 3
variables set, the feedback capacitor value (CF) may be set
to control the frequency response.
A 10nF ceramic bypass capacitor is the minimum
recommended value; adding a 1µF or larger tantalum
capacitor in parallel can be beneficial when driving a
low-resistance load. Providing adequate bypass
capacitance is essential to achieving very low harmonic
and intermodulation distortion.
POWER DISSIPATION
Power dissipation depends on power-supply voltage,
signal and load conditions. With DC signals, power
dissipation is equal to the product of output current times
the voltage across the conducting output transistor,
VS − VO. Power dissipation can be minimized by using the
lowest possible power-supply voltage necessary to assure
the required output voltage swing.
CF
< 1pF
(prevents gain peaking)
RF
10MΩ
+V
For resistive loads, the maximum power dissipation occurs
at a DC output voltage of one-half the power-supply
voltage. Dissipation with AC signals is lower. Application
Bulletin AB-039 (SBOA022), Power Amplifier Stress and
Power Handling Limitations, explains how to calculate or
measure power dissipation with unusual signals and
loads, and can be found at www.ti.com.
λ
CD OPA354
VOUT
Figure 8. Transimpedance Amplifier
To achieve a maximally flat 2nd-order Butterworth
frequency response, the feedback pole should be set to:
1
+
2pR FCF
GBP
Ǹ4pR
C
F
D
(1)
Typical surface-mount resistors have a parasitic
capacitance of around 0.2pF that must be deducted from
the calculated feedback capacitance value.
Bandwidth is calculated by:
f *3dB +
GBP Hz
Ǹ2pR
C
F
D
Any tendency to activate the thermal protection circuit
indicates excessive power dissipation or an inadequate
heatsink. For reliable operation, junction temperature
should be limited to 150°C, maximum. To estimate the
margin of safety in a complete design, increase the
ambient temperature until the thermal protection is
triggered at 160°C. The thermal protection should trigger
more than 35°C above the maximum expected ambient
condition of your application.
PowerPAD THERMALLY ENHANCED
PACKAGE
(2)
For even higher transimpedance bandwidth, the
high-speed CMOS OPA355 (200MHz GBW) or the
OPA655 (400MHz GBW) may be used.
PCB LAYOUT
Good high-frequency printed circuit board (PCB) layout
techniques should be employed for the OPA354.
Generous use of ground planes, short and direct signal
traces, and a suitable bypass capacitor located at the V+
pin will assure clean, stable operation. Large areas of
copper also provides a means of dissipating heat that is
generated in normal operation.
Sockets are definitely not recommended for use with any
high-speed amplifier.
Besides the regular SOT23-5 and MSOP-8, the single and
dual versions of the OPA354 also come in SO-8
PowerPAD. The SO-8 PowerPAD is a standard-size SO-8
package where the exposed leadframe on the bottom of
the package can be soldered directly to the PCB to create
an extremely low thermal resistance. This will enhance the
OPA354’s power dissipation capability significantly and
eliminates the use of bulky heatsinks and slugs
traditionally used in thermal packages. This package can
be easily mounted using standard PCB assembly
techniques. NOTE: Since the SO-8 PowerPAD is
pin-compatible with standard SO-8 packages, the
OPA354 and OPA2354 can directly replace operational
amplifiers in existing sockets. Soldering the PowerPAD to
the PCB is always required, even with applications that
have low power dissipation. This provides the necessary
thermal and mechanical connection between the
leadframe die pad and the PCB.
15
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SBOS233E − MARCH 2002− REVISED MAY 2009
The PowerPAD package is designed so that the leadframe
die pad (or thermal pad) is exposed on the bottom of the
IC, as shown in Figure 9. This provides an extremely low
thermal resistance (qJC) path between the die and the
exterior of the package. The thermal pad on the bottom of
the IC can then be soldered directly to the PCB, using the
PCB as a heatsink. In addition, plated-through holes (vias)
provide a low thermal resistance heat flow path to the back
side of the PCB.
Leadframe (Copper Alloy)
IC (Silicon)
Mold Compound (Plastic)
Die Attach (Epoxy)
Leadframe Die Pad
Exposed at Base of the Package
(Copper Alloy)
Figure 9. Section View of a PowerPAD Package
4. It is recommended, but not required, to place a small
number of additional holes under the package and outside
the thermal pad area. These holes provide additional heat
paths between the copper thermal land and the ground
plane. They may be larger because they are not in the area
to be soldered, so wicking is not a problem. This is
illustrated in Figure 10.
5. Connect all holes, including those within the thermal pad
area and outside the pad area, to the internal ground plane
or other internal copper plane for single-supply
applications, and to V− for split-supply applications.
6. When laying out these holes, do not use the typical web
or spoke via connection methodology, as shown in
Figure 11. Web connections have a high thermal
resistance connection that is useful for slowing the heat
transfer during soldering operations. This makes soldering
the vias that have ground plane connections easier.
However, in this application, low thermal resistance is
desired for the most efficient heat transfer. Therefore, the
holes under the PowerPAD package should make their
connection to the internal ground plane with a complete
connection around the entire circumference of the
plated-through hole.
PowerPAD ASSEMBLY PROCESS
1. The PowerPAD must be connected to the device’s most
negative supply voltage, which will be ground in
single-supply applications, and V− in split-supply
applications.
2. Prepare the PCB with a top-side etch pattern, as shown
in Figure 10. The exact land design may vary based on the
specific assembly process requirements. There should be
etch for the leads as well as etch for the thermal land.
Solid Via
RECOMMENDED
Web or Spoke Via
NOT RECOMMENDED
(due to poor heat conduction)
Figure 11. Via Connection
Thermal Land
(Copper)
Minimum Size
4.8mm x 3.8mm
(189 mils x 150 mils)
OPTIONAL:
Additional 4 vias outside
of thermal pad area but
under the package.
REQUIRED:
Thermal pad area 2.286mm x 2.286mm
(90 mils x 90 mils) with 5 vias
(via diameter = 13 mils)
Figure 10. 8-Pin PowerPAD PCB Etch and Via
Pattern
3. Place the recommended number of plated-through
holes (or thermal vias) in the area of the thermal pad.
These holes should be 13 mils in diameter. They are kept
small so that solder wicking through the holes is not a
problem during reflow. The minimum recommended
number of holes for the SO-8 PowerPAD package is 5, as
shown in Figure 10.
16
7. The top-side solder mask should leave the pad
connections and the thermal pad area exposed. The
thermal pad area should leave the 13 mil holes exposed.
The larger holes outside the thermal pad area may be
covered with solder mask.
8. Apply solder paste to the exposed thermal pad area and
all of the package terminals.
9. With these preparatory steps in place, the PowerPAD IC
is simply placed in position and run through the solder
reflow operation as any standard surface-mount
component. This results in a part that is properly installed.
For detailed information on the PowerPAD package
including thermal modeling considerations and repair
procedures, please see Technical Brief SLMA002,
PowerPAD Thermally Enhanced Package, located at
www.ti.com.
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
OPA2354AIDDA
ACTIVE SO PowerPAD
DDA
8
75
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
2354A
OPA2354AIDDAG3
ACTIVE SO PowerPAD
DDA
8
75
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
2354A
OPA2354AIDDAR
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
2354A
OPA2354AIDDARG3
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
2354A
OPA2354AIDGKR
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR
& no Sb/Br)
-40 to 125
OACI
OPA2354AIDGKRG4
ACTIVE
VSSOP
DGK
8
2500
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR
& no Sb/Br)
-40 to 125
OACI
OPA2354AIDGKT
ACTIVE
VSSOP
DGK
8
250
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR
& no Sb/Br)
-40 to 125
OACI
OPA2354AIDGKTG4
ACTIVE
VSSOP
DGK
8
250
Green (RoHS CU NIPDAUAG Level-2-260C-1 YEAR
& no Sb/Br)
-40 to 125
OACI
OPA354AIDBVR
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OABI
OPA354AIDBVRG4
ACTIVE
SOT-23
DBV
5
3000
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OABI
OPA354AIDBVT
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OABI
OPA354AIDBVTG4
ACTIVE
SOT-23
DBV
5
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OABI
OPA354AIDDA
ACTIVE SO PowerPAD
DDA
8
75
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
354A
OPA354AIDDAG3
ACTIVE SO PowerPAD
DDA
8
75
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
354A
OPA354AIDDAR
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
354A
OPA354AIDDARG3
ACTIVE SO PowerPAD
DDA
8
2500
Green (RoHS
& no Sb/Br)
CU SN
Level-1-260C-UNLIM
-40 to 125
OPA
354A
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4354A
OPA4354AID
ACTIVE
SOIC
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
Orderable Device
11-Apr-2013
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
(2)
MSL Peak Temp
Op Temp (°C)
Top-Side Markings
(3)
(4)
OPA4354AIDG4
ACTIVE
SOIC
D
14
50
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4354A
OPA4354AIDR
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4354A
OPA4354AIDRG4
ACTIVE
SOIC
D
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA4354A
OPA4354AIPWR
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA
4354A
OPA4354AIPWRG4
ACTIVE
TSSOP
PW
14
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA
4354A
OPA4354AIPWT
ACTIVE
TSSOP
PW
14
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA
4354A
OPA4354AIPWTG4
ACTIVE
TSSOP
PW
14
250
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA
4354A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
Multiple Top-Side Markings will be inside parentheses. Only one Top-Side Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a
continuation of the previous line and the two combined represent the entire Top-Side Marking for that device.
Addendum-Page 2
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
11-Apr-2013
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF OPA2354 :
• Automotive: OPA2354-Q1
NOTE: Qualified Version Definitions:
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Oct-2013
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
OPA2354AIDDAR
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
OPA2354AIDGKR
VSSOP
DGK
8
2500
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
OPA2354AIDGKT
VSSOP
DGK
8
250
330.0
12.4
5.3
3.4
1.4
8.0
12.0
Q1
OPA354AIDBVR
SOT-23
DBV
5
3000
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA354AIDBVT
SOT-23
DBV
5
250
178.0
9.0
3.23
3.17
1.37
4.0
8.0
Q3
OPA354AIDDAR
SO
Power
PAD
DDA
8
2500
330.0
12.4
6.4
5.2
2.1
8.0
12.0
Q1
OPA4354AIDR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
OPA4354AIPWR
TSSOP
PW
14
2500
330.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
OPA4354AIPWT
TSSOP
PW
14
250
180.0
12.4
6.9
5.6
1.6
8.0
12.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Oct-2013
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA2354AIDDAR
OPA2354AIDGKR
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
VSSOP
DGK
8
2500
367.0
367.0
35.0
OPA2354AIDGKT
VSSOP
DGK
8
250
366.0
364.0
50.0
OPA354AIDBVR
SOT-23
DBV
5
3000
180.0
180.0
18.0
OPA354AIDBVT
SOT-23
DBV
5
250
180.0
180.0
18.0
OPA354AIDDAR
SO PowerPAD
DDA
8
2500
367.0
367.0
35.0
OPA4354AIDR
SOIC
D
14
2500
367.0
367.0
38.0
OPA4354AIPWR
TSSOP
PW
14
2500
367.0
367.0
35.0
OPA4354AIPWT
TSSOP
PW
14
250
210.0
185.0
35.0
Pack Materials-Page 2
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