INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK14A55D，ITK14A55D ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.31Ω (typ.) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 14 A IDM Drain Current-Single Pulsed 56 A PD Total Dissipation @TC=25℃ 50 W Tj Max. Operating Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 2.5 ℃/W 62.5 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor iscN-Channel MOSFET Transistor TK14A55D，ITK14A55D ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA 550 VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA 2.0 RDS(on) Drain-Source On-Resistance VGS=10V; ID=7A IGSS Gate-Source Leakage Current IDSS VSDF TYP MAX UNIT V 4.0 V 370 mΩ VGS= ±30V;VDS= 0V ±1 μA Drain-Source Leakage Current VDS=650V; VGS= 0V 10 μA Diode forward voltage IDR =14A, VGS = 0 V 1.7 V isc website：www.iscsemi.cn 2 310 isc & iscsemi is registered trademark