BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current B 1 ● 10 A Peak Collector Current C 2 ● Customer-Specified Selections Available E 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL Collector-base voltage (IE = 0) BD543B Collector-emitter voltage (IB = 0) V CBO 60 80 BD543C 100 BD543 40 BD543A BD543B UNIT 40 BD543 BD543A VALUE VCEO 60 80 V V 100 BD543C VEBO 5 IC 8 A Peak collector current (see Note 1) ICM 10 A Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 70 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2 W Operating free air temperature range TA -65 to +150 °C °C Emitter-base voltage Continuous collector current Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds V Tj -65 to +150 Tstg -65 to +150 °C TL 260 °C NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. 2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C. 3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER V(BR)CEO ICES ICEO IEBO hFE V CE(sat) VBE hfe |hfe | Collector-emitter breakdown voltage TEST CONDITIONS IC = 30 mA MIN IB = 0 (see Note 4) BD543 40 BD543A 60 BD543B 80 BD543C 100 TYP MAX V VCE = 40 V VBE = 0 BD543 0.4 Collector-emitter VCE = 60 V VBE = 0 BD543A 0.4 cut-off current VCE = 80 V VBE = 0 BD543B 0.4 VCE = 100 V VBE = 0 BD543C 0.4 Collector cut-off VCE = 30 V IB = 0 BD543/543A 0.7 current VCE = 60 V IB = 0 BD543B/543C 0.7 VEB = 5V IC = 0 Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio 1 VCE = 4V IC = 1 A VCE = 4V IC = 3A VCE = 4V IC = 5A IB = 0.3 A IC = 3A IB = 1A IC = 5A IB = 1.6 A IC = 8A 4V IC = 5A VCE = UNIT mA mA mA 60 (see Notes 4 and 5) 40 15 0.5 (see Notes 4 and 5) 0.5 V 1 (see Notes 4 and 5) 1.4 VCE = 10 V IC = 0.5 A f = 1 kHz 20 VCE = 10 V IC = 0.5 A f = 1 MHz 3 V NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN TYP 1.79 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † TEST CONDITIONS † MIN ton Turn-on time IC = 6 A IB(on) = 0.6 A IB(off) = -0.6 A toff Turn-off time VBE(off) = -4 V RL = 5 Ω tp = 20 µs, dc ≤ 2% 0.6 µs 1 µs Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 TYP JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCS633AI hFE - DC Current Gain VCE = 4 V TC = 25°C tp = 300 µs, duty cycle < 2% 100 10 1·0 0·1 1·0 IC = 300 mA IC = 1 A IC = 3 A IC = 6 A 1·0 0·1 0·01 0·001 10 TCS633AE 10 VCE(sat) - Collector-Emitter Saturation Voltage - V 1000 IC - Collector Current - A 0·01 0·1 1·0 10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT 1·2 TCS633AF VBE - Base-Emitter Voltage - V VCE = 4 V TC = 25°C 1·1 1·0 0·9 0·8 0·7 0·6 0·1 1·0 10 IC - Collector Current - A Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 10 SAS633AF 1·0 0·1 0·01 1·0 BD543 BD543A BD543B BD543C 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS633AD Ptot - Maximum Power Dissipation - W 80 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.