MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier Low Leakage Current 5.0 μA FEATURES ITO-220AB TO-220AB • Guardring for overvoltage protection • Low power loss, high efficiency • Low forward voltage drop • High frequency operation • Solder dip 275 °C max., 10 s per JESD 22-B106 1 2 3 1 MBR20H150CT 2 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 3 MBRF20H150CT TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, freewheeling, and polarity protection applications. MECHANICAL DATA 1 2 Case: TO-220AB, ITO-220AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade 3 SB20H150CT-1 PIN 1 PIN 2 PIN 3 CASE Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test per Polarity: As marked PRIMARY CHARACTERISTICS IF(AV) Mounting Torque: 10 in-lbs maximum 2 x 10 A VRRM 150 V IFSM 200 A VF 0.75 V TJ max. 175 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR20H150CT UNIT Maximum repetitive peak reverse voltage VRRM 150 V Working peak reverse voltage VRWM 150 V Maximum DC blocking voltage VDC 150 V Maximum average forward rectified current per device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) 20 10 A IFSM 200 Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz IRRM 1.0 A Peak non-repetitive reverse surge energy per diode (8/20 μs waveform) ERSM 10 mJ Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH Voltage rate of change (rated VR) Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min Revision: 09-Aug-11 A EAS 11.25 mJ dV/dt 10 000 V/μs TJ, TSTG - 65 to + 175 °C VAC 1500 V Document Number: 88864 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage per diode SYMBOL IF = 10 A TC = 25 °C IF = 10 A TC = 125 °C IF = 20 A TC = 25 °C IF = 20 A VALUE 0.75 VF (1) V 0.99 TC = 125 °C 0.86 TJ = 25 °C Maximum reverse current per diode at working peak reverse voltage UNIT 0.90 IR (1) TJ = 125 °C 5.0 μA 1.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RJC 2.2 4.2 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE Tube TO-220AB MBR20H150CT-E3/45 2.06 45 50/tube ITO-220AB MBRF20H150CT-E3/45 2.20 45 50/tube Tube TO-262AA SB20H150CT-1E3/45 1.58 45 50/tube Tube Note (1) AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 260 30 Peak Forward Surge Current (A) Average Forward Current (A) 240 25 MBR, MBRB 20 MBRF 15 10 5 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 220 200 180 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Derating Curve (Total) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Revision: 09-Aug-11 Document Number: 88864 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor 10 000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C TJ = 75 °C 1 TJ = 25 °C 1000 100 10 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (µA) 10 000 TJ = 175 °C 100 TJ = 125 °C 10 1 TJ = 75 °C 0.1 TJ = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 10 MBRF MBR, MBRB 1 0.1 0.01 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 09-Aug-11 Document Number: 88864 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.055 (1.40) 0.047 (1.20) 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.049 (1.25) 0.150 (3.80) 0.139 (3.54) DIA. 0.114 (2.90) 0.106 (2.70) 0.343 (8.70) TYP. 0.154 (3.90) 0.138 (3.50) 0.067 (1.70) TYP. 0.331(8.40) TYP. 1 0.634 (16.10) 0.618 (15.70) PIN 2 3 0.118 (3.00) TYP. 0.638 (16.20) 0.598 (15.20) 0.370 (9.40) 0.354 (9.00) 1.161 (29.48) 1.106 (28.08) 0.523 (13.28) 0.507 (12.88) 0.102 (2.60) 0.087 (2.20) 0.035 (0.90) 0.028 (0.70) 0.064 (1.62) 0.056 (1.42) 0.200 (5.08) TYP. 0.100 (2.54) TYP. 0.024 (0.60) 0.018 (0.45) ITO-220AB 0.408 (10.36) 0.392 (9.96) 1.29 (3.28) DIA. 1.21 (3.08) 0.138 (3.50) 0.122 (3.10) 0.630 (16.00) 0.614 (15.60) 1 PIN 2 3 0.193 (4.90) 0.177 (4.50) 0.108 (2.74) 0.092 (2.34) 0.264 (6.70) 0.248 (6.50) 0.270 (6.88) 0.255 (6.48) 0.320 (8.12) 0.304 (7.72) 0.633 (16.07) 0.601 (15.67) 0.117 (2.96) 0.101 (2.56) 0.396 (10.05) 0.372 (9.45) 0.039 (1.00) 0.024 (0.60) 0.100 (2.54) TYP. Revision: 09-Aug-11 0.058 (1.47) MAX. 0.200 (5.08) TYP. 0.024 (0.60) 0.018 (0.45) Document Number: 88864 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR20H150CT, MBRF20H150CT, SB20H150CT-1 www.vishay.com Vishay General Semiconductor TO-262AA 0.398 (10.10) 0.382 (9.70) 0.185 (4.70) 0.169 (4.30) 0.055 (1.40) 0.039 (1.00) 0.055 (1.40) 0.049 (1.25) K 0.370 (9.40) 0.354 (9.00) 1 PIN 2 3 0.425 (10.80) 0.393 (10.00) 0.488 (12.4) 0.472 (12.00) 0.102 (2.60) 0.087 (2.20) 0.523 (13.28) 0.507 (12.88) 0.035 (0.90) 0.028 (0.70) 0.100 (2.54) TYP. Revision: 09-Aug-11 0.405 (10.28) 0.389 (9.88) 0.062 (1.57) 0.054 (1.37) 0.024 (0.60) 0.018 (0.45) 0.200 (5.08) TYP. Document Number: 88864 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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