SMD Switching Diode CDSW16-G RoHS Device Features SOD-123 -Fast Switching Speed -Electrically Identical to Standard JEDEC 0.110 (2.80) -High Conductance 0.098 (2.50) -Surface Mount Package Ideally Suited for Automatic Insertion 0.028 (0.70) 0.071 (1.80) 0.019 (0.50) 0.055 (1.40) 0.154 (3.90) -Flat Package SOD-123 in Stead mini-MELF 0.141 (3.60) Package 0.008 (0.20)max 0.053 (1.35) 0.037 (0.95) Mechanical data 0.005 (0.12)max 0.016 (0.40)min -Case: SOD-123, Molded Plastic -Terminals: Solderable per MIL-STD-202, Method 208 Dimensions in inches and (millimeters) -Weight: 0.01 gram(approx.). Maximum Ratings (at Ta=25°C unless otherwise noted) Conditions Parameter Min Symbol Max Unit Non-Repetitive peak reverse voltage VRM 100 V Peak repetitive peak reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR 75 V VR(RMS) 53 V IFM 300 mA Io 150 mA IFSM 2 1 A PD 400 RMS reverse voltage Forward continuous current Average rectified output current TP = 1uS TP = 1S Peak forward surge current Power dissipation Thermal Resistance (Junction to ambient) R Storage temperature TSTG Junction temperature mW O C/W 315 JA -65 Tj +150 O +125 O C C Electrical Characteristics (at Ta=25°C unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit IF = 1 mA DC IF = 10mA DC IF = 50mA DC IF =150mA DC VF 0.715 0.855 1.0 1.25 V Forward voltage Reverse current VR = 20 V VR = 75 V IR 25 1 nA uA Capacitance between terminals f = 1 MHZ,and 0VDC reverse voltage CT 2 PF Reverse recovery time IF = IR=10 mA, RL =100 ohms, Irr = 0.1 X IR TRR 4 nS REV:A QW-B0026 Page 1 SMD Switching Diode Typical Characteristics (CDSW16-G) Fig.2 - Leakage current V.S. Junction Temperature Fig.1 - Forward Characteristics 10,000 100 1,000 IR, Leakage Current (nA) IF, Instantaneous Forward Current (mA) 1000 10 1 100 10 0.1 VR=20V 1 0.01 0 1 V F, Instantaneous Forward Voltage (V) 2 0 100 200 Tj, Junction Temperature (°C) REV:A QW-B0026 Page 2